KR101018244B1 - Method of manufacturing nitride-based semiconductor light emitting device - Google Patents
Method of manufacturing nitride-based semiconductor light emitting device Download PDFInfo
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- KR101018244B1 KR101018244B1 KR1020080109584A KR20080109584A KR101018244B1 KR 101018244 B1 KR101018244 B1 KR 101018244B1 KR 1020080109584 A KR1020080109584 A KR 1020080109584A KR 20080109584 A KR20080109584 A KR 20080109584A KR 101018244 B1 KR101018244 B1 KR 101018244B1
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Abstract
The present invention relates to a method for manufacturing a nitride-based semiconductor light emitting device, comprising: forming a sacrificial layer on a growth substrate; Forming a light emitting structure by sequentially growing a first conductive nitride layer, an active layer, and a second conductive nitride layer on the sacrificial layer; Removing the light emitting structure and the sacrificial layer so as to expose the bonding interface between the light emitting structure and the sacrificial layer and separating the light emitting structure and the sacrificial layer into a desired size of a final light emitting device; Oxidizing the sacrificial layer in a process of bonding a conductive substrate on the second conductive nitride layer; Etching the oxidized sacrificial layer to separate the growth substrate from the separated light emitting structure; And forming a first conductive electrode on the surface of the separated light emitting structure from which the growth substrate is removed, thereby reducing crystal damage of the nitride layer and improving yield of the light emitting device.
Laser lift-off, wet etching, vertical nitride semiconductor light emitting device
Description
The present invention relates to a method of manufacturing a nitride-based light emitting device, and more particularly, to reduce the crystal damage of the nitride layer due to the thermal shock applied during the laser lift-off (LLO) process and to improve the yield of the light emitting device. A method of manufacturing a nitride-based light emitting device having a vertical structure that can be improved.
Until now, LED (Light Emitting Diode) light emitting devices have grown a semiconductor material on a sapphire substrate and separated the sapphire substrate from the growth layer. Representative substrate separation methods include laser lift-off (LLO) and chemical lift-off (CLO).
Conventionally, a method of manufacturing a nitride-based semiconductor light emitting device having a vertical structure by using the LLO method will be described first, after manufacturing a nitride-based light emitting structure grown on the sapphire substrate, and then p-type of the growth layer of the nitride-based light emitting structure The nitride semiconductor layer is bonded to a conductive substrate such as metal. Next, the sacrificial layer between the sapphire substrate and the growth layer is irradiated with a laser beam to apply heat, thereby peeling off the n-type nitride semiconductor layer from the sapphire substrate. Then, an n-type electrode was formed on the n-type nitride semiconductor layer to form a light emitting device having a vertical current structure.
However, this LLO method has a problem that it is difficult to avoid the thermal shock applied to the active layer of the growth layer using a high power laser.
That is, the GaN single crystal constituting the sapphire substrate and the light emitting structure has a large lattice mismatch, and even when a GaN / AlN buffer layer / sacrificial layer is formed between the sapphire substrate and the light emitting structure, it is smaller than the lattice mismatch between the sapphire substrate and the GaN single crystal, but it is a few%. Lattice mismatch occurs.
Therefore, even if the nitride light emitting structure is separated into element units, thermal stress is generated as heat generated in the process of irradiating a laser beam to the sapphire substrate laterally along the sapphire substrate causes damage to the nitride crystal.
In order to overcome this problem, the proposed CLO method is still in the development stage, and thus it is difficult to be stably applied to device fabrication.
The present invention has been made to solve the above problems, and an object thereof is to provide a method of manufacturing a nitride-based semiconductor light emitting device having a vertical structure which can improve the reliability of the light emitting device by stably separating the sapphire substrate and the nitride light emitting structure. .
A method of manufacturing a nitride-based semiconductor light emitting device according to an embodiment of the present invention, forming a sacrificial layer on a growth substrate; Forming a light emitting structure by sequentially growing a first conductive nitride layer, an active layer, and a second conductive nitride layer on the sacrificial layer; Removing the light emitting structure and the sacrificial layer so as to expose the bonding interface between the light emitting structure and the sacrificial layer and separating the light emitting structure and the sacrificial layer into a desired size of a final light emitting device; Oxidizing the sacrificial layer in a process of bonding a conductive substrate on the second conductive nitride layer; Etching the oxidized sacrificial layer to separate the growth substrate from the separated light emitting structure; And forming a first conductive electrode on a surface of the separated light emitting structure from which the growth substrate is removed.
In this case, the sacrificial layer is preferably AlN or Al x Ga (1-x) N, the oxidized sacrificial layer is an oxide containing Al.
In addition, the growth substrate is a non-conductive substrate, may be a sapphire substrate or a GaN substrate, the conductive substrate may be made of a material selected from the group consisting of Si, Al, Ge, SiC and GaAs.
In addition, the first conductive nitride layer and the second conductive nitride layer are Al x In y Ga (1-xy) N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). It is preferable.
The forming of the light emitting structure may further include forming a highly reflective ohmic contact layer on the second conductive nitride layer, wherein the light emitting structure and the sacrificial layer are exposed to expose the bonding interface. Separating the structure and the sacrificial layer to the desired size of the final light emitting device may be performed by mesa etching.
In addition, the step of oxidizing the sacrificial layer in the process of bonding the conductive substrate on the second conductive nitride layer, it is preferably carried out by wet heat-compression.
In addition, the step of separating the growth substrate from the separated light emitting structure by etching the oxidized sacrificial layer, selective using any one of HF, H 2 NO 3 , KOH and buffered oxide etchant (buffered oxide etchant) It is preferably carried out by wet etching.
The method may further include forming a second conductive electrode on the other surface of the conductive substrate facing the one surface to which the separated light emitting structure is bonded, and cutting the conductive substrate according to the separated light emitting structure. It may further include.
According to the present invention, it is possible to prevent performance degradation and leakage of the light emitting device due to thermal shock applied when the sapphire substrate is separated by the LLO method.
In addition, according to the present invention, by simultaneously proceeding the oxidation process of the sacrificial layer in the bonding process of the conductive substrate it is possible to simplify the process process can reduce the manufacturing cost of the light emitting device.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art. In addition, it should be considered that elements of the drawings attached to the present specification may be enlarged or reduced for convenience of description.
1A to 1E are side cross-sectional views of respective processes for explaining a method of manufacturing a nitride-based semiconductor light emitting device according to one preferred embodiment of the present invention. In the present invention, a sapphire substrate is applied as a growth substrate to be described.
As shown in FIG. 1A, the
In addition to the
Subsequently, as shown in FIG. 1B, the
The first
The
Next, as shown in FIG. 1C, the
Subsequently, as illustrated in FIG. 1D, the
At this time, the wet heat-compression method for bonding the
After the bonding of the
Here, since the Al 2 O x oxide layer 130 ″ is selectively wet etched by a wet viewing solution, the Al 2 O x oxide layer 130 ″ may be etched from the side surface, and the first
In this case, the method may include surface treating the surface of the first
Next, as illustrated in FIG. 1E, a contact layer is formed on the light emitting structure in which the top and bottom of the resultant product of FIG. 1D are inverted. The contact layer forming process may be performed on the upper surface of the first
2 is a side cross-sectional view showing another embodiment of a
As shown in FIG. 2, a highly reflective
The highly reflective
As described above, the light emitting structure having the highly reflective ohmic contact layer formed thereon may be subjected to the same processes as those of FIGS. 1C to 1E.
3 is a side cross-sectional view of a nitride based semiconductor light emitting device in which a
As shown in FIG. 3, the nitride-based semiconductor
Accordingly, according to the method of manufacturing the nitride semiconductor light emitting device according to FIGS. 1A to 1E, 2 and 3, AlN or Al x Ga (1-x) N is formed between the sapphire substrate and the first conductive nitride layer. After the sacrificial layer is formed, the sacrificial layer may be separated from the light emitting structure by removing the Al 2 O x oxide film through a selective wet etching process by oxidizing the sacrificial layer with an Al 2 O x oxide film. As a result, damage to the nitride semiconductor crystal due to thermal shock applied during separation of the sapphire substrate through the laser lift-off process can be prevented.
The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims, and various forms of substitution, modification, and within the scope not departing from the technical spirit of the present invention described in the claims. It will be apparent to those skilled in the art that changes are possible.
1A to 1E are side cross-sectional views of respective processes for explaining a method of manufacturing a nitride-based semiconductor light emitting device according to an embodiment of the present invention;
2 is a side cross-sectional view showing another embodiment of a light emitting structure manufactured according to FIG. 1B;
3 is a side cross-sectional view of a nitride based semiconductor light emitting device in which a conductive substrate is separated by a light emitting structure manufactured according to FIGS. 1A to 1E.
Claims (12)
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100649763B1 (en) * | 2005-12-09 | 2006-11-27 | 삼성전기주식회사 | A method of producing vertical nitride light emitting devices |
KR20060131324A (en) * | 2005-06-16 | 2006-12-20 | 엘지전자 주식회사 | Manufacturing process of light emitting diode using aluminium buffer layer |
KR100867518B1 (en) | 2006-09-06 | 2008-11-07 | 삼성전기주식회사 | Method of manufacturing nitride-based semiconductor light emitting device |
KR100874653B1 (en) | 2007-07-30 | 2008-12-17 | 고려대학교 산학협력단 | Gallium nitride light emitting diode and method for manufacturing the same |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR20060131324A (en) * | 2005-06-16 | 2006-12-20 | 엘지전자 주식회사 | Manufacturing process of light emitting diode using aluminium buffer layer |
KR100649763B1 (en) * | 2005-12-09 | 2006-11-27 | 삼성전기주식회사 | A method of producing vertical nitride light emitting devices |
KR100867518B1 (en) | 2006-09-06 | 2008-11-07 | 삼성전기주식회사 | Method of manufacturing nitride-based semiconductor light emitting device |
KR100874653B1 (en) | 2007-07-30 | 2008-12-17 | 고려대학교 산학협력단 | Gallium nitride light emitting diode and method for manufacturing the same |
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