KR100975527B1 - Iii-nitride semiconductor light emitting device - Google Patents
Iii-nitride semiconductor light emitting device Download PDFInfo
- Publication number
- KR100975527B1 KR100975527B1 KR1020080115062A KR20080115062A KR100975527B1 KR 100975527 B1 KR100975527 B1 KR 100975527B1 KR 1020080115062 A KR1020080115062 A KR 1020080115062A KR 20080115062 A KR20080115062 A KR 20080115062A KR 100975527 B1 KR100975527 B1 KR 100975527B1
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- South Korea
- Prior art keywords
- nitride semiconductor
- group iii
- iii nitride
- light emitting
- emitting device
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The present disclosure relates to a group III nitride semiconductor light emitting device, and more particularly, to a group III nitride semiconductor layer having a first conductivity and a group III nitride semiconductor layer having a second conductivity different from the first conductivity. A plurality of Group III nitrides comprising a Group II nitride semiconductor layer and an active layer positioned between the Group III nitride semiconductor layer and the Group III nitride nitride semiconductor layer to generate first light by recombination of electrons and holes. A semiconductor layer; A first bonding pad electrically connected to the second group III nitride semiconductor layer; And a fluorescent film having a fluorescent material excited by the first light and emitting a second light different from the first light, wherein the fluorescent film is cured and positioned on the plurality of group III nitride semiconductor layers to expose the first bonding pads. It provides a Group III nitride semiconductor light-emitting device comprising a; fluorescent film provided with a lens on the top having a first cutout.
Group III nitride, semiconductor, light emitting device, LED, phosphor, fluorescent film, light extraction efficiency
Description
The present disclosure generally relates to a group III nitride semiconductor light emitting device, and more particularly, to a group III nitride semiconductor light emitting device including a fluorescent film capable of improving light extraction efficiency.
Here, the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device. The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). In addition, GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.
This section provides backgound informaton related to the present disclosure which is not necessarily prior art.
1 is a view illustrating an example of a conventional Group III nitride semiconductor light emitting device, wherein the Group III nitride semiconductor light emitting device is grown on the
As the
Group III nitride semiconductor layers grown on the
The
In the n-type group III
The
The p-type III-
The p-
On the other hand, the p-
The p-
The
Meanwhile, the n-type III-
FIG. 2 is a diagram illustrating an example of a semiconductor light emitting device (LED) package described in Korean Patent Publication No. 10-0818518. The
U.S. Patent Nos. 5,998,925 and 6,069,440 are fluorescent materials that may be provided in the
A conventional group III nitride semiconductor light emitting device and a package including the same include an n-
However, as light generated in the
In addition, the
On the other hand, the light emission characteristics of the
This will be described later in the Specification for Implementation of the Invention.
SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).
According to one aspect of the present disclosure, a second conductivity is formed on a first group III nitride semiconductor layer having a first conductivity and a first group III nitride semiconductor layer, the second conductivity being different from the first conductivity. A third group III nitride semiconductor layer having an active layer and an active layer positioned between the first group III nitride semiconductor layer and the second group III nitride semiconductor layer to generate first light by recombination of electrons and holes; A group nitride semiconductor layer; A first bonding pad electrically connected to the second group III nitride semiconductor layer; And a fluorescent film having a fluorescent material excited by the first light and emitting a second light different from the first light, wherein the fluorescent film is cured and positioned on the plurality of group III nitride semiconductor layers to expose the first bonding pads. It provides a Group III nitride semiconductor light-emitting device comprising a; fluorescent film provided with a lens on the top having a first cutout.
This will be described later in the Specification for Implementation of the Invention.
The present disclosure will now be described in detail with reference to the accompanying drawing (s).
3 is a diagram illustrating an example of a group III nitride semiconductor light emitting device according to the present disclosure, in which the group III nitride semiconductor light emitting device is disposed on a
The p-
The
The
In addition, the
The
The thickness of the
The
4 is a view illustrating another example of the group III nitride semiconductor light emitting device according to the present disclosure, wherein the group III nitride semiconductor light emitting device is disposed on the
This is a so-called vertical light emitting device in which the
In the examples of the Group III nitride semiconductor light emitting device according to FIGS. 3 and 4, a protective film (not shown) may be disposed between the p-
Hereinafter, a method of manufacturing a group III nitride semiconductor light emitting device according to the present disclosure will be described in detail.
FIG. 5 is a view illustrating an example of a method of manufacturing the
Next, the
Next, the
Next, the
Here, the
The
FIG. 6 is a view showing an example of a
FIG. 7 is a view showing another example of the method of manufacturing the
8 is a view illustrating an example of a method of manufacturing the
Various embodiments of the present disclosure will be described below.
(1) A group III nitride semiconductor light emitting device comprising a cured fluorescent film. As a result, color deviation can be reduced and color can be easily adjusted.
(2) A group III nitride semiconductor light emitting element comprising a fluorescent film having a cutout portion for wire bonding. As a result, the light emission characteristics of the light emitting device by the fluorescent material can be measured even before the package.
(3) A group III nitride semiconductor light emitting element comprising a lens on a fluorescent film. As a result, the light extraction efficiency of the light emitting device can be improved.
(4) A group III nitride semiconductor light emitting element comprising an adhesive layer. Thereby, the adhesiveness of a fluorescent film can be improved and the unity of a light emitting element can be improved.
According to one group III nitride semiconductor light emitting device according to the present disclosure, the light extraction efficiency in the fluorescent film can be improved.
According to another group III nitride semiconductor light emitting device according to the present disclosure, it is possible to improve the occurrence of color deviation due to the fluorescent material.
According to another group III nitride semiconductor light emitting device according to the present disclosure, it is possible to improve the color change according to the fluorescent material and to easily control the color change.
According to another group III nitride semiconductor light emitting device according to the present disclosure, it is possible to easily adjust the compounding ratio of the fluorescent material, and to easily adjust the thickness of the fluorescent film.
According to another group III nitride semiconductor light emitting device according to the present disclosure, it is possible to improve that the light emission characteristics before and after wire bonding are changed.
1 is a view showing an example of a conventional group III nitride semiconductor light emitting device,
2 is a view showing an example of a semiconductor light emitting device (LED) package described in Korean Patent Publication No. 10-0818518;
3 is a view showing an example of a group III nitride semiconductor light emitting device according to the present disclosure;
4 is a view showing another example of the group III nitride semiconductor light emitting device according to the present disclosure;
5 is a view showing an example of a method of manufacturing a fluorescent film provided in a group III nitride semiconductor light emitting device according to the present disclosure;
6 is a view showing an example of a frame used in a method of manufacturing a fluorescent film provided in a group III nitride semiconductor light emitting device according to the present disclosure;
7 is a view showing another example of a method of manufacturing a fluorescent film provided in a group III nitride semiconductor light emitting device according to the present disclosure;
8 is a view showing an example of a method of manufacturing a lens provided in a group III nitride semiconductor light emitting device according to the present disclosure.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080115062A KR100975527B1 (en) | 2008-11-19 | 2008-11-19 | Iii-nitride semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080115062A KR100975527B1 (en) | 2008-11-19 | 2008-11-19 | Iii-nitride semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
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KR20100056081A KR20100056081A (en) | 2010-05-27 |
KR100975527B1 true KR100975527B1 (en) | 2010-08-13 |
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KR1020080115062A KR100975527B1 (en) | 2008-11-19 | 2008-11-19 | Iii-nitride semiconductor light emitting device |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102288384B1 (en) * | 2014-11-18 | 2021-08-11 | 서울반도체 주식회사 | Light emitting device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000196152A (en) | 1998-12-24 | 2000-07-14 | Toshiba Corp | Semiconductor light emitting device and manufacture thereof |
KR20030082282A (en) * | 2002-04-17 | 2003-10-22 | 엘지전자 주식회사 | White light emitting diode |
KR100748708B1 (en) | 2006-07-20 | 2007-08-13 | 서울옵토디바이스주식회사 | Light-emitting diode and method of manufacturing the same |
KR100801922B1 (en) | 2006-09-29 | 2008-02-12 | 서울반도체 주식회사 | Production method for light emitting element |
-
2008
- 2008-11-19 KR KR1020080115062A patent/KR100975527B1/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000196152A (en) | 1998-12-24 | 2000-07-14 | Toshiba Corp | Semiconductor light emitting device and manufacture thereof |
KR20030082282A (en) * | 2002-04-17 | 2003-10-22 | 엘지전자 주식회사 | White light emitting diode |
KR100748708B1 (en) | 2006-07-20 | 2007-08-13 | 서울옵토디바이스주식회사 | Light-emitting diode and method of manufacturing the same |
KR100801922B1 (en) | 2006-09-29 | 2008-02-12 | 서울반도체 주식회사 | Production method for light emitting element |
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