KR100972679B1 - A manufacturing and heating jacket for pipeline gas refined of semiconductor fabrication - Google Patents

A manufacturing and heating jacket for pipeline gas refined of semiconductor fabrication Download PDF

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KR100972679B1
KR100972679B1 KR1020080014180A KR20080014180A KR100972679B1 KR 100972679 B1 KR100972679 B1 KR 100972679B1 KR 1020080014180 A KR1020080014180 A KR 1020080014180A KR 20080014180 A KR20080014180 A KR 20080014180A KR 100972679 B1 KR100972679 B1 KR 100972679B1
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South Korea
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heating element
teflon sheet
gas
pattern
hot wire
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KR1020080014180A
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Korean (ko)
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KR20090088727A (en
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오재영
염한균
장성정
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오재영
염한균
장성정
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Priority to PCT/KR2008/007070 priority patent/WO2009102112A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/267—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an organic material, e.g. plastic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/082—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising vinyl resins; comprising acrylic resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B32B27/322—Layered products comprising a layer of synthetic resin comprising polyolefins comprising halogenated polyolefins, e.g. PTFE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers

Abstract

본 발명은 가스를 이송하는 가스관의 외면에 착설되는 면상 발열체의 두께가 1mm정도의 박판상으로 형성되어 상기 가스관에 손쉽고, 용이하게 부착하여 사용할 수 있도록 함은 물론, 상기 금속 박판상에 포토레지스트로 패턴을 형성한 후 상기 패턴 이외의 불필요한 박막을 식각(etching)하여 열선 패턴을 형성하는 간단한 공정에 의해 면상 발열체의 제작이 간편하게 이루어지며, 상기 열선 패턴의 상하측에 일정한 두께로 착설되는 유리섬유가 함침된 테프론 시이트를 통하여 열선을 안전하게 보호하면서 절연작용을 수행하여, 이송되는 가스를 고청정 상태로 정제 시킬 수 있도록한 반도체 설비의 가스관 가스정제기용 면상 발열체 및 그 제조방법에 관한 것이다.The present invention is formed in a thin plate shape of the thickness of the planar heating element which is installed on the outer surface of the gas pipe for transporting gas to be easily and easily attached to the gas pipe, as well as to use a pattern with a photoresist on the metal sheet After the formation, the surface heating element is easily manufactured by a simple process of etching an unnecessary thin film other than the pattern to form a hot wire pattern, and the glass fiber impregnated with a predetermined thickness on the upper and lower sides of the hot wire pattern is impregnated. The present invention relates to a planar heating element for a gas pipe gas purifier of a semiconductor facility in which an insulating action is performed while protecting a hot wire safely through a Teflon sheet, so that the transported gas can be purified to a high clean state.

그 기술적인 구성은, 가스를 이송하는 가스관의 외면에 착설되는 발열체의 테프론 시이트상에 FEP(Fluorinated Ethylene Propylene copolymer) 필름과 30~100μm 두께의 도전체 금속 박판을 순차로 적층 후, 이를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압착하고, 상기 금속 박판상에 포토레지스트(Photoresist)로 패턴을 형성한 후 상기 패턴 이외의 불필요한 박막을 식각(etching)하여 열선 패턴을 형성하며, 상기 열선 패턴의 상측에는 FEP 필름을 개재하여, 100~500μm 두께의 테프론 시이트 또는 유리섬유가 함침된 테프론 시이트를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압착하여 면상 발열체를 제작하는 것을 요지로 한다. The technical configuration is that after stacking FEP (Fluorinated Ethylene Propylene copolymer) film and 30 ~ 100μm thick conductive metal thin film on the Teflon sheet of the heating element which is installed on the outer surface of the gas pipe to transfer gas, it is 280 ~ 360 After pressing by hot pressing at a pressure of 15 to 30 kg / cm 2 for 1 to 2 minutes at a temperature of ℃, forming a pattern with a photoresist on the thin metal plate and then etching unnecessary thin films other than the pattern. ) To form a hot wire pattern, and through the FEP film on the upper side of the hot wire pattern, a Teflon sheet of 100 ~ 500μm thickness or Teflon sheet impregnated with glass fibers at a temperature of 280 ~ 360 ℃ for 1 ~ 2 minutes It is a summary to produce a planar heating element by pressing by hot pressing at a pressure of 30 kg / cm 2.

테프론 시이트, FEP 필름, 열선 패턴, 면상 발열체 Teflon sheet, FEP film, hot wire pattern, planar heating element

Description

반도체 설비의 가스관 가스정제용 면상 발열체 및 그 제조방법{A MANUFACTURING AND HEATING JACKET FOR PIPELINE GAS REFINED OF SEMICONDUCTOR FABRICATION}Planar heating element for gas pipe gas purification of semiconductor equipment and its manufacturing method {A MANUFACTURING AND HEATING JACKET FOR PIPELINE GAS REFINED OF SEMICONDUCTOR FABRICATION}

본 발명은 반도체의 제조 공정에서 사용되는 가스를 이송하는 가스정제기의 외면에 착설되어, 발열작용에 의해 이송되는 가스를 고청정 상태로 정제 시킬 수 있는 가스관 정제기용 면상 발열체 및 그 제조방법에 관한 것으로 이는 특히, 가스를 이송하는 가스관의 외면에 착설되는 발열체의 테프론 시이트상에 FEP(Fluorinated Ethylene Propylene copolymer) 필름과 일정두께의 도전체 금속 박판을 순차로 적층 후, 이를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압착하고, 상기 금속 박판상에 포토레지스트(Photoresist)로 패턴을 형성한 후 상기 패턴 이외의 불필요한 박막을 식각(etching)하여 열선 패턴을 형성하며, 상기 열선 패턴의 상측에는 FEP 필름을 개재하여, 일정두께의 테프론 시이트 또는 유리섬유가 함침된 테프론 시이트를 핫 프레스작업에 의해 압착하여 면상 발열체를 제작함으로써, 가스를 이송하는 가스관의 외면에 착설되는 면상 발열체의 두께가 1mm정도의 박판상으로 형성되어 상기 가스관에 손쉽고, 용이하게 부착하여 사용할 수 있도록 함은 물론, 상기 면상 발열체의 제작이 간편하게 이루어지며, 상기 열선 패턴의 상하측에 일정한 두께로 착설되는 유리섬유가 함침된 테프론 시이트를 통하여 열선을 안전하게 보호하면서 절연작용을 수행하여, 이송되는 가스를 고청정 상태로 정제 시킬 수 있는 반도체 설비의 가스정제기용 면상 발열체 및 그 제조방법에 관한 것이다.The present invention relates to a planar heating element for a gas pipe purifier installed on an outer surface of a gas purifier for transporting gas used in a semiconductor manufacturing process and capable of purifying the gas transported by an exothermic action to a high clean state and a method of manufacturing the same. In particular, after the FEP (Fluorinated Ethylene Propylene copolymer) film and a conductive metal thin plate of a predetermined thickness are sequentially laminated on the Teflon sheet of the heating element which is installed on the outer surface of the gas pipe for transporting the gas, this is 1 to a temperature of 280 ~ 360 ℃ After hot pressing at a pressure of 15 to 30 kg / cm 2 for ˜2 minutes, a pattern is formed on the metal sheet with a photoresist, and an unnecessary thin film other than the pattern is etched to form a hot wire pattern. And a Teflon sheet impregnated with a glass of Teflon sheet or glass fiber impregnated with a predetermined thickness through a FEP film on the hot wire pattern. By producing a planar heating element by pressing by the work, the thickness of the planar heating element installed on the outer surface of the gas pipe for transporting the gas is formed in a thin plate shape of about 1mm to allow easy and easy attachment to the gas pipe, as well as The planar heating element is easily manufactured, and the insulating gas is safely protected through a teflon sheet impregnated with a glass fiber installed at a predetermined thickness on the upper and lower sides of the hot wire pattern, thereby insulating the gas to be transported into a high clean state. The present invention relates to a planar heating element for a gas purifier of a semiconductor device that can be purified, and a method of manufacturing the same.

일반적으로 알려져있는 반도체 설비의 가스관은, 반도체 제조공정에 필수적인 요소로서 사용되는 초고순도의 원료 가스를 고청정 가스관을 이용하여 원하는 작업위치까지 순도를 저하시키지 않고 공급하는 것으로, 고순도의 원료가스가 공급될 수 있도록 가스정제기에 세라믹 히이터등을 착설하여 가스관을 가열 시킴으로써, 청정 가스가 공급될 수 있도록 하는 것이다.The gas pipe of a semiconductor equipment generally known is a supply of ultra-high purity raw material gas, which is used as an essential element in a semiconductor manufacturing process, using a high clean gas pipe without degrading the purity to a desired working position. The ceramic heater is installed in the gas purifier to heat the gas pipe so that the clean gas can be supplied.

그러나, 상기와같은 종래의 가스정제기용 히이터는, 쟈켓 형태의 히터의 제작시, 세라믹으로 히터 열선을 몰딩하고, 이를 금속 CASE속에 고정하여 제작함으로 인한 부피와 무게가 커지게 되어, 가스정제기 외면에 설치가 어렵게 됨은 물론, 원가의 부담이 가중되는 단점이 있는 것이다.However, in the conventional gas purifier heater as described above, when manufacturing a jacket-type heater, the volume and weight of the heater heating wire is molded by ceramic, and fixed to the metal casing to increase the volume and weight, the outer surface of the gas purifier Installation is difficult, of course, there is a disadvantage that the cost burden.

본 발명은 상기와 같은 종래의 문제점들을 개선시키기 위하여 안출된 것으로서 그 목적은, 가스를 이송하는 가스정제기의 외면에 착설되는 면상 발열체의 두께가 1mm정도의 박판상으로 형성되어 상기 가스정제기에에 손쉽고, 용이하게 부착하여 사용할 수 있도록 함은 물론, 상기 금속 박판상에 포토레지스트로 패턴을 형성한 후 상기 패턴 이외의 불필요한 박막을 식각(etching)하여 열선 패턴을 형성하는 간단한 공정에 의해 면상 발열체의 제작이 간편하게 이루어지며, 상기 열선 패턴의 상하측에 일정한 두께로 착설되는 유리섬유가 함침된 테프론 시이트를 통하여 열선을 안전하게 보호하면서 절연작용을 수행하여, 이송되는 가스를 고청정 상태로 정제 시킬 수 있는 반도체 설비의 가스정제기용 면상 발열체 및 그 제조방법을 제공하는데에 있다. The present invention has been made in order to improve the conventional problems as described above, the object is that the thickness of the surface heating element installed on the outer surface of the gas purifier for transporting gas is formed in a thin plate of about 1mm, easy to the gas purifier, It is easy to attach and use, as well as to form a planar heating element by a simple process of forming a hot wire pattern by etching the unnecessary thin film other than the pattern after forming a pattern with a photoresist on the metal thin plate In the semiconductor equipment that can be purified to a high clean state by performing an insulating action while protecting the hot wire through a Teflon sheet impregnated with a glass fiber that is installed in a predetermined thickness on the upper and lower sides of the heating wire pattern. The present invention provides a planar heating element for a gas purifier and a method of manufacturing the same.

상기와 같은 목적을 달성하기 위한 기술적인 수단으로서 본 발명은, 반도체 설비의 가스정제기용 면상 발열체의 제조방법에 있어서, As a technical means for achieving the above object, the present invention provides a method for producing a planar heating element for a gas purifier of semiconductor equipment,

가스를 이송하는 가스관의 외면에 착설되는 발열체의 테프론 시이트상에 FEP(Fluorinated Ethylene Propylene copolymer) 필름과 30~100μm 두께의 도전체 금속 박판을 순차로 적층 후, 이를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압착하고, 상기 금속 박판상에 포토레지스트(Photoresist)로 패턴을 형성한 후 상기 패턴 이외의 불필요한 박막을 식각(etching)하여 열선 패턴을 형성하며, 상기 열선 패턴의 상측에는 FEP 필름을 개재하여, 100~500μm 두께의 테프론 시이트 또는 유리섬유가 함침된 테프론 시이트를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압 착하여 면상 발열체를 제작하는 것을 특징으로 하는 반도체 설비의 가스관 가스정제기용 면상 발열체 제조방법을 마련함에 의한다.After stacking FEP (Fluorinated Ethylene Propylene copolymer) film and 30 ~ 100μm thick conductive metal thin plate on Teflon sheet of heating element installed on the outer surface of gas pipe to transfer gas, it is 1 ~ to the temperature of 280 ~ 360 ℃. After pressing by hot pressing at a pressure of 15 to 30 kg / cm 2 for 2 minutes, and forming a pattern with a photoresist on the metal sheet, an unnecessary thin film other than the pattern is etched to form a hot wire pattern. The upper side of the hot wire pattern is interposed between a FEP film and a Teflon sheet having a thickness of 100 to 500 μm or a Teflon sheet impregnated with glass fibers at a temperature of 280 to 360 ° C. for 1 to 2 minutes at a pressure of 15 to 30 kg / cm 2. According to the present invention, there is provided a method for producing a planar heating element for a gas pipe gas purifier of a semiconductor facility, which is compressed by hot pressing to produce a planar heating element.

테프론 시이트상에 FEP(Fluorinated Ethylene Propylene copolymer) 필름과 도전체 금속 박판이 식각(etching)에 의해 열선 패턴이 형성되며, 상기 열선 패턴의 상측에는 FEP 필름을 개재하여, 테프론 시이트 또는 유리섬유가 함침된 테프론 시이트가 핫 프레스 압착에 의해 적층 형성토록 되는 반도체 설비의 가스관 가스정제용 면상 발열체에 있어서,A hot wire pattern is formed by etching a FEP (Fluorinated Ethylene Propylene copolymer) film and a conductive metal thin plate on the Teflon sheet, and an upper side of the hot wire pattern is interposed with a FEP film to impregnate Teflon sheet or glass fiber. In the planar heating element for gas pipe gas purification of a semiconductor installation, in which a Teflon sheet is laminated and formed by hot press compression,

상기 열선 패턴을 형성하는 테프론 시이트는 100~500μm 및 도전체 금속박판은 30~100μm 두께로 형성되며, 상기 열선 패턴의 상측에 FEP 필름을 개재하여 적층되는 테프론 시이트는 100~500μm 두께로 적층되는 것을 특징으로 하는 반도체 설비의 가스관 가스정제용 면상 발열체를 마련함에 의한다.The Teflon sheet forming the hot wire pattern is 100 ~ 500μm and the conductor metal thin plate is formed of 30 ~ 100μm thickness, the Teflon sheet laminated via the FEP film on the upper side of the hot wire pattern is laminated to 100 ~ 500μm thickness The surface heating element for gas pipe gas purification of a semiconductor facility is provided.

본 발명인 반도체 설비의 가스관 가스정제용 면상 발열체 및 그 제조방법에 의하면, 가스를 이송하는 가스관의 외면에 착설되는 면상 발열체의 두께가 1mm정도의 박판상으로 형성되어 상기 가스관에 손쉽고, 용이하게 부착하여 사용할 수 있도록 함은 물론, 상기 금속 박판상에 포토레지스트로 패턴을 형성한 후 상기 패턴 이외의 불필요한 박막을 식각(etching)하여 열선 패턴을 형성하는 간단한 공정에 의해 면상 발열체의 제작이 간편하게 이루어지며, 상기 열선 패턴의 상하측에 일정한 두께로 착설되는 유리섬유가 함침된 테프론 시이트를 통하여 열선을 안전하게 보호하면서 절연작용을 수행하여, 이송되는 가스를 고청정 상태로 정제 시킬 수 있는 우수한 효과가 있다. According to the present invention, the planar heating element for gas pipe gas purification of the semiconductor equipment and the manufacturing method thereof is formed in a thin plate shape having a thickness of about 1 mm, which is installed on the outer surface of the gas pipe carrying gas, and is easily and easily attached to the gas pipe. In addition, the surface heating element can be easily manufactured by a simple process of forming a hot wire pattern by etching an unnecessary thin film other than the pattern after forming a pattern with a photoresist on the metal thin plate. Through the Teflon sheet impregnated with the glass fiber impregnated with a predetermined thickness on the upper and lower sides of the pattern to perform an insulating action while protecting the hot wire safely, there is an excellent effect to purify the gas to be transported to a high clean state.

본 발명은 특정한 실시예에 관련하여 도시하고 설명하였지만, 이하의 특허청구의 범위에 의해 마련되는 본 발명의 정신이나 분야를 벗어나지 않는 한도내에서 본 발명이 다양하게 개조 및 변화될수 있다는 것을 당업계에서 통상의 지식을 가진자는 용이하게 알수 있음을 밝혀두고자 한다.While the invention has been shown and described with respect to specific embodiments thereof, it will be appreciated that various changes and modifications can be made in the art without departing from the spirit or scope of the invention as set forth in the following claims. Those of ordinary skill will want to know easily.

이하, 첨부된 도면에 의거하여 본 발명의 실시예를 상세하게 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명에 따른 반도체 설비의 가스정제기에 착설되어 이송 가스를 정제하는 면상 발열체의 적층 구조도로서, 100~500μm 두께의 테프론 시이트(10)상에 FEP(Fluorinated Ethylene Propylene copolymer) 필름(20)과 30~100μm 두께의 도전체 금속 박판이 식각(etching)에 의해 열선 패턴(30)이 형성되며, 상기 열선 패턴(30)의 상측에는 재차 FEP 필름(20)을 개재하여, 100~500μm 두께의 테프론 시이트(40) 또는 유리섬유가 함침된 테프론 시이트가 압착에 의해 적층 형성토록 되어 면상 발열체(100)를 형성하는 구성으로 이루어진다.1 is a laminated structure diagram of a planar heating element which is installed in a gas purifier of a semiconductor device according to the present invention to purify a transport gas, and a FEP (Fluorinated Ethylene Propylene copolymer) film 20 on a Teflon sheet 10 having a thickness of 100 to 500 μm. And a hot wire pattern 30 is formed by etching a conductive metal thin plate having a thickness of 30 to 100 μm. The FEP film 20 is again provided on the upper side of the hot wire pattern 30 to have a thickness of 100 to 500 μm. The Teflon sheet 40 or the Teflon sheet impregnated with the glass fiber is formed to be laminated by pressing to form the planar heating element 100.

이와같은 구성으로 이루어진 본 발명의 반도체 설비의 가스관 가스정제용 면상 발열체 제조방법을 설명하면 다음과 같다.The manufacturing method of the planar heating element for gas purification of gas pipe of the semiconductor equipment of this invention which consists of such a structure is as follows.

가스를 이송하는 가스관의 외면에 착설되는 면상 발열체(100)는, 두께가 100~500μm으로 형성되는 테프론 시이트(10)의 상측에 박막상의 FEP(Fluorinated Ethylene Propylene copolymer) 필름(20)과 30~100μm 두께의 도전체 금속 박판을 순차로 적층한다.The planar heating element 100 which is installed on the outer surface of the gas pipe for transporting gas has a thin-film Fluorinated Ethylene Propylene copolymer (FEP) film 20 and 30-100 μm on the upper side of the Teflon sheet 10 having a thickness of 100 to 500 μm. Thin conductor metal thin plates are sequentially stacked.

이때, 상기 테프론 시이트(10)는 내부에 유리섬유가 내장된 테프론 시이트로 구성하여 단열성능(R Value) 및 불연성, 내습성은 물론 내구성을 향상시킬 수 있도록 한다. 또한 상기 테프론 시이트(10)의 두께가 100μm 이하일 경우에는, 너무 얇은 두께에 의해 후술하는 핫 프레스 가공시 쉽게 박리현상이 발생하게 되며, 그 두께가 500μm 이상일 경우에는, 내부에 설치되는 열선 패턴(30)에 의한 가스관에 전달되는 약 250℃의 열이 제대로 전달되지 않게 되어, 가스관 내부의 이송가스를 제대로 가열할 수 없게 되는 것으로 본 발명에서는 상기 테프론 시이트(10)의 두께가 100~500μm으로 형성되는 것이 바람직 하다.At this time, the Teflon sheet 10 is composed of a Teflon sheet with a glass fiber embedded therein to improve the thermal insulation performance (R Value) and non-flammability, moisture resistance as well as durability. In addition, when the thickness of the Teflon sheet 10 is 100μm or less, the peeling phenomenon easily occurs during hot press processing described later due to the too thin thickness, and when the thickness is 500μm or more, the hot wire pattern 30 installed inside The heat of about 250 ° C to be delivered to the gas pipe by) is not properly transferred, the transfer gas inside the gas pipe is not able to properly heat in the present invention, the thickness of the Teflon sheet 10 is formed to 100 ~ 500μm It is desirable.

또한, 상기 테프론 시이트(10)의 상측에 적층되는 박막상의 FEP(Fluorinated Ethylene Propylene copolymer)필름(20)은, 테프론 시이트 표면에 적층되어 습기등에 극히 우수하고, 250~300℃의 온도에서도 테프론 시이트를 보호할 수 있도록 한다.In addition, the thin film FEP (Fluorinated Ethylene Propylene Copolymer) film 20 laminated on the upper side of the Teflon sheet 10 is laminated on the surface of the Teflon sheet and is extremely excellent in moisture and the like, and the Teflon sheet is formed even at a temperature of 250 to 300 ° C. Protect it.

계속해서, 상기와같이 테프론 시이트(10)의 상측에 박막상의 FEP(Fluorinated Ethylene Propylene copolymer)필름(20)을 개재하여 30~100μm 두께의 도전체 금속 박판이 적층된 후, 이를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압착하고, 상기 금속 박판상에 포토레지스트(Photoresist)로 패턴을 형성하며, 상기 패턴 이외의 불필요한 박막을 식 각(etching)하여 열선 패턴을 형성한다.Subsequently, after the thin film of the conductive metal thin plate having a thickness of 30 to 100 μm is laminated on the upper side of the Teflon sheet 10 through the thin film-type Fluorinated Ethylene Propylene copolymer (FEP) film 20, it is 280 to 360 ° C. Pressed by hot pressing at a pressure of 15 to 30 kg / cm 2 for 1 to 2 minutes at a temperature, forming a pattern with a photoresist on the metal sheet, and etching unnecessary thin films other than the pattern. To form a hot wire pattern.

상기 도전체 금속 박판은 그 두께가 30μm이하 또는 100μm일 경우에는, 도전체 금속 박판의 두께가 너무 얇거나, 또는 너무 두껍게 되어 식각(etching)가공시 열선 패턴이 제대로 형성되지 않게 되는데 기인하는 것이다.When the thickness of the conductive metal thin plate is 30 μm or less or 100 μm, the thickness of the conductive metal thin plate is too thin or too thick so that the hot wire pattern is not properly formed during etching.

또한, 상기 열선 패턴을 통한 발열 온도인 250℃ 이상인 280~360℃의 온도로 1~2분동안 핫 프레스로 압착 가공시, 상기 압착 가공시간이 1분 이하에서는 도전체 금속 박판이 테프론 시이트 및 박막상의 FEP필름과 제대로 압착이 이루어지지 않게 되어, 박리되는 현상이 발생하거나, 또는 2분을 초과할 경우 도전체 금속 박판이 박막상의 FEP필름은 물론, 테프론 시이트 내부에 함침되는 현상에 의해 식각(etching)가공을 제대로 수행할 수 없게 된다.In addition, when the pressing process for 1 to 2 minutes by hot press at a temperature of 280 ~ 360 ℃ that is a heat generation temperature of 250 ℃ or more through the hot wire pattern, when the pressing time is 1 minute or less, the conductive metal thin plate is Teflon sheet and thin film It may not be properly pressed with the FEP film on the surface, and a peeling phenomenon may occur, or when more than 2 minutes, the conductive metal sheet is etched by the impregnation of the thin film FEP film and the inside of the Teflon sheet. You will not be able to perform the machining properly.

한편, 상기와같이 식각(etching)에 의해 형성되는 열선 패턴의 상측에는 상기와 같이, 재차 FEP 필름을 개재하여, 100~500μm 두께의 테프론 시이트 또는 유리섬유가 함침된 테프론 시이트를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압착함으로서, 열선 패턴을 안전하게 보호하면서 절연작용을 수행하여, 이송되는 가스를 고청정 상태로 정제 시킬 수 있는 것이다.On the other hand, as described above, the upper side of the hot wire pattern formed by etching as described above, again through the FEP film, 100 ~ 500μm thick Teflon sheet or glass fiber impregnated Teflon sheet of 280 ~ 360 ℃ By pressing by hot pressing at a pressure of 15 to 30 kg / cm 2 for 1 to 2 minutes at a temperature, the insulating gas can be secured while protecting the hot wire pattern, thereby purifying the transported gas to a high clean state.

도 1은 본 발명에 따른 반도체 설비의 가스관에 착설되어 이송 가스를 정제하는 면상 발열체의 적층 구조도.1 is a laminated structure diagram of a planar heating element installed in a gas pipe of a semiconductor installation according to the present invention to purify a transport gas.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

10...테프론 시이트10 ... Teflon Sheet

20...FEP(Fluorinated Ethylene Propylene copolymer) 필름20 ... FEP (Fluorinated Ethylene Propylene Copolymer) Film

30...열선 패턴 40... 테프론 시이트30 ... heat pattern 40 ... Teflon sheet

100...면상 발열체100 ... plane heating element

Claims (3)

반도체 설비의 가스관 가스정제기용 면상 발열체의 제조방법에 있어서, In the method for producing a planar heating element for a gas pipe gas purifier of a semiconductor facility, 가스를 이송하는 가스정제기의 외면에 착설되는 발열체의 테프론 시이트상에 FEP(Fluorinated Ethylene Propylene copolymer) 필름과 30~100μm 두께의 도전체 금속 박판을 순차로 적층 후, 이를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압착하고, 상기 금속 박판상에 포토레지스트(Photoresist)로 패턴을 형성한 후 상기 패턴 이외의 불필요한 박막을 식각(etching)하여 열선 패턴을 형성하며, 상기 열선 패턴의 상측에는 재차 FEP 필름을 개재하여, 100~500μm 두께의 테프론 시이트를 280~360℃의 온도로 1~2분동안 15~30kg/㎠의 압력으로 핫 프레스작업의 의해 압착하여 면상 발열체를 제작하는 것을 특징으로 하는 반도체 설비의 가스관 가스정제용 면상 발열체 제조방법.After stacking FEP (Fluorinated Ethylene Propylene copolymer) film and 30 ~ 100μm thick conductive metal thin film on the Teflon sheet of the heating element installed on the outer surface of the gas purifier to transfer gas, it is 1 to the temperature of 280 ~ 360 ℃. After hot pressing at a pressure of 15 to 30 kg / cm 2 for ˜2 minutes, a pattern is formed on the metal sheet with a photoresist, and an unnecessary thin film other than the pattern is etched to form a hot wire pattern. On the upper side of the hot wire pattern, through the FEP film again, 100 ~ 500μm thick Teflon sheet is pressed by hot pressing at a pressure of 15 ~ 30kg / ㎠ for 1 to 2 minutes at a temperature of 280 ~ 360 ℃ And a planar heating element for producing a gas pipe gas purification of a semiconductor facility. 제 1항에 있어서, 상기 FEP 필름과 도전체 금속 박판이 적층되는 테프론 시이트 내부에는 유리섬유가 내장되는 것을 특징으로 하는 반도체 설비의 가스관 가스정제용 면상 발열체 제조방법.The method of claim 1, wherein a glass fiber is embedded in the Teflon sheet on which the FEP film and the conductive metal thin plate are laminated. 테프론 시이트상에 FEP(Fluorinated Ethylene Propylene copolymer) 필름과 도전체 금속 박판이 식각(etching)에 의해 열선 패턴이 형성되며, 상기 열선 패턴의 상측에는 FEP 필름을 개재하여, 테프론 시이트 또는 유리섬유가 함침된 테프론 시이트가 핫 프레스 압착에 의해 적층 형성토록 되는 반도체 설비의 가스관 가스정제용 면상 발열체에 있어서,A hot wire pattern is formed by etching a FEP (Fluorinated Ethylene Propylene copolymer) film and a conductive metal thin plate on the Teflon sheet, and an upper side of the hot wire pattern is interposed with a FEP film to impregnate Teflon sheet or glass fiber. In the planar heating element for gas pipe gas purification of a semiconductor installation, in which a Teflon sheet is laminated and formed by hot press compression, 상기 열선 패턴을 형성하는 테프론 시이트는 100~500μm 및 도전체 금속박판은 30~100μm 두께로 형성되며, 상기 열선 패턴의 상측에 FEP 필름을 개재하여 적층되는 테프론 시이트는 100~500μm 두께로 적층 되는 것을 특징으로 하는 반도체 설비의 가스관 가스정제용 면상 발열체.The Teflon sheet forming the hot wire pattern is 100 ~ 500μm and the conductive metal thin plate is formed of 30 ~ 100μm thick, the Teflon sheet laminated via the FEP film on the upper side of the hot wire pattern is laminated to 100 ~ 500μm thickness A planar heating element for gas purification, gas purification, of semiconductor equipment.
KR1020080014180A 2008-02-15 2008-02-15 A manufacturing and heating jacket for pipeline gas refined of semiconductor fabrication KR100972679B1 (en)

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KR20050031904A (en) * 2003-09-30 2005-04-06 니찌아스 카부시키카이샤 Heat insulating structure of piping and heat insulating tool kit
KR20070079862A (en) * 2006-02-03 2007-08-08 (주) 나노텍 Heating element using carbon nano tube
KR100758136B1 (en) * 2006-11-07 2007-09-12 두원공과대학산학협력단 Flat type heater and method for manufacturing thereof

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JP2004208978A (en) * 2002-12-27 2004-07-29 Mycoal Products Corp Heating composition and heating body
WO2006112516A1 (en) * 2005-04-19 2006-10-26 Teijin Limited Carbon fiber composite sheet, use of the same as heat transferring article, and sheet for pitch-based carbon fiber mat for use therein
KR20070024806A (en) * 2005-08-30 2007-03-08 삼성전자주식회사 Heating jacket

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050031904A (en) * 2003-09-30 2005-04-06 니찌아스 카부시키카이샤 Heat insulating structure of piping and heat insulating tool kit
KR20070079862A (en) * 2006-02-03 2007-08-08 (주) 나노텍 Heating element using carbon nano tube
KR100758136B1 (en) * 2006-11-07 2007-09-12 두원공과대학산학협력단 Flat type heater and method for manufacturing thereof

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