KR100946159B1 - Atomic Layer Deposition Device - Google Patents

Atomic Layer Deposition Device Download PDF

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KR100946159B1
KR100946159B1 KR1020070085755A KR20070085755A KR100946159B1 KR 100946159 B1 KR100946159 B1 KR 100946159B1 KR 1020070085755 A KR1020070085755 A KR 1020070085755A KR 20070085755 A KR20070085755 A KR 20070085755A KR 100946159 B1 KR100946159 B1 KR 100946159B1
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susceptor
housing
thin film
suction
gas
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KR20090021031A (en
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전영수
신인철
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주식회사 케이씨텍
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

반응가스가 서로 혼합되는 현상을 방지하여 증착 품질을 향상시킬 수 있는 박막 증착장치가 개시된다. 본 발명에 따른 박막 증착장치는, 하우징, 상기 하우징 내로 가스를 분사하는 분사유닛, 상기 하우징 내에 구비되며 복수 개의 기판이 원주 방향을 따라 안착되는 서셉터 및 상기 복수 개의 기판이 형성하는 중앙의 빈공간에 상기 서셉터와 별도의 부재로 구비되며, 측부에 상기 하우징의 외부와 연통하는 다수의 흡입홀이 형성되되, 상기 흡입홀의 형성 높이는 상기 서셉터에 안착되는 기판과 같거나 더 높은 위치에 형성된 흡입유닛을 포함한다. 따라서, 본 발명에 의하면 반응가스가 서로 혼합되는 현상을 방지하여 증착품질을 향상시킬 수 있다.Disclosed is a thin film deposition apparatus capable of improving deposition quality by preventing a reaction gas from being mixed with each other. The thin film deposition apparatus according to the present invention includes a housing, an injection unit for injecting gas into the housing, a susceptor provided in the housing, and a plurality of substrates seated in a circumferential direction, and a central empty space formed by the plurality of substrates. Is provided as a member separate from the susceptor, a plurality of suction holes are formed in the side communication with the outside of the housing, the suction hole is formed at a position equal to or higher than the substrate seated on the susceptor It includes a unit. Therefore, according to the present invention, it is possible to prevent the phenomenon in which the reaction gases are mixed with each other to improve the deposition quality.

박막 증착장치, 서셉터, 흡입유닛, 흡입홀, 흡입유로 Thin film deposition apparatus, susceptor, suction unit, suction hole, suction flow path

Description

박막 증착장치{Atomic Layer Deposition Device}Thin Film Deposition Device {Atomic Layer Deposition Device}

본 발명은 박막 증착장치에 관한 것으로서, 보다 상세하게는 구조를 개선하여 서로 다른 반응가스들이 혼합되는 현상을 방지하여 증착 품질을 향상시킨 박막 증착장치에 관한 것이다.The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus which improves the deposition quality by preventing a phenomenon in which different reaction gases are mixed by improving the structure.

일반적으로, 반도체 웨이퍼나 글래스 등의 기판 상에 소정 두께의 박막을 증착하기 위해서는 스퍼터링(Sputtering)과 같이 물리적인 충돌을 이용하는 물리 기상 증착법(PVD; Physical Vapor Deposition)과, 화학 반응을 이용하는 화학 기상 증착법(CVD; Chemical Vapor Deposition) 등을 이용한 박막 제조 방법이 사용된다.In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor wafer or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction A thin film production method using (CVD; Chemical Vapor Deposition) is used.

여기서, 화학 기상 증착법으로는 상압 화학 기상증착법(APCVD; Atmospheric Pressure CVD), 저압 화학 기상 증착법(LPCVD; Low Pressure CVD), 플라즈마 유기 화학 기상 증착법(Plasma Enhanced CVD)등이 있으며, 이 중에서 저온 증착이 가능하고 박막 형성 속도가 빠른 장점 때문에 플라즈마 유기 화학 기상 증착법이 많이 사용되고 있다.Here, chemical vapor deposition includes atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), plasma organic chemical vapor deposition (Plasma Enhanced CVD), and the like. Plasma organic chemical vapor deposition has been widely used due to its advantages and fast film formation.

그러나, 반도체 소자의 디자인 룰(Design Rule)이 급격하게 줄어듦으로 인해 미세 패턴의 박막이 요구되었고, 박막이 형성되는 영역의 단차 또한 매우 커지게 되었다. 이에 원자층 두께의 미세 패턴을 매우 균일하게 형성할 수 있을 뿐만 아니라 스텝 커버리지(Step Coverage)가 매우 우수한 단원자층 증착 방법(ALD; Atomic Layer Deposition)의 사용이 증대되고 있다. 즉, 반도체 제조 공정의 게이트 산화막, 커패시터 유전막 및 확산 방지막과 같은 박막의 증착에 사용된다.However, as the design rule of the semiconductor device is drastically reduced, a thin film of a fine pattern is required, and the step of the region where the thin film is formed also becomes very large. As a result, the use of an atomic layer deposition (ALD) method, which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing. That is, it is used for the deposition of thin films such as gate oxide films, capacitor dielectric films and diffusion barrier films in semiconductor manufacturing processes.

원자층 증착 방법(ALD)은, 기체 분자들 간의 화학 반응을 이용한다는 점에 있어서 일반적인 화학 기상 증착(CVD; Chemical Vapour Deposition) 방법과 유사하다. 하지만, 통상의 화학 기상 증착 방법이 다수의 기체 분자들을 동시에 챔버 내로 주입하여 웨이퍼의 상방에서 발생된 반응 생성물을 웨이퍼에 증착하는 것인 반면, 원자층 증착 방법은 하나의 기체 물질을 챔버 내로 주입한 후 이를 퍼지(purge)하여 가열된 웨이퍼의 상부에 물리적으로 흡착된 기체만을 잔류시키고, 이후 다른 기체 물질을 주입함으로써 상기 웨이퍼의 상면에서만 발생되는 화학 반응 생성물을 증착한다는 점에서 상이하다.The atomic layer deposition method (ALD) is similar to the conventional chemical vapor deposition (CVD) method in that it uses chemical reactions between gas molecules. However, the conventional chemical vapor deposition method is to inject a plurality of gas molecules into the chamber at the same time to deposit the reaction product generated above the wafer onto the wafer, whereas the atomic layer deposition method is to inject one gaseous material into the chamber. It is then different in that it purges it, leaving only the gas that is physically adsorbed on top of the heated wafer, and then injecting another gaseous material to deposit the chemical reaction product that occurs only on the top of the wafer.

이러한 원자층 증착 방법을 통해 구현되는 박막은 스텝 커버리지(step coverage) 특성이 매우 우수하며, 특히 불순물 함유량이 월등히 낮은 순수한 박막을 구현하는 것이 가능한 장점을 갖고 있어 현재 널리 각광받고 있다.The thin film implemented through such an atomic layer deposition method has a very excellent step coverage characteristic, and in particular, has the advantage that it is possible to implement a pure thin film with a very low impurity content, which is widely attracting attention.

도 1 및 도 2를 참조하여, 상술한 바와 같은 원자층 증착 방법에 의해 기판 표면에 소정의 막을 증착시키는 종래 박막 증착 장치의 일 예를 설명하면 다음과 같다.1 and 2, an example of a conventional thin film deposition apparatus for depositing a predetermined film on the surface of a substrate by the atomic layer deposition method as described above is as follows.

종래 박막 증착장치는, 도 1에 도시된 바와 같이, 공정챔버(C)의 상부에 회전형 분사장치가 구비된다.Conventional thin film deposition apparatus, as shown in Figure 1, is provided with a rotary injector on the upper portion of the process chamber (C).

상기 회전형 분사장치는 구동축(10), 하우징(20) 및 분사기(30)로 구성되며, 분사기(30)가 공정챔버(C) 내에서 회전하면서 반응가스와 퍼지가스를 분사하여 기판(W) 상에 박막을 증착시킨다.The rotatable injector includes a drive shaft 10, a housing 20, and an injector 30. The injector 30 rotates in the process chamber C and injects reaction gas and purge gas, thereby providing a substrate (W). A thin film is deposited on it.

하지만, 이와 달리 분사 장치가 고정되는 대신 서셉터(40)가 회전하면서 기판(W)상에 반응가스와 퍼지가스를 분사하도록 구성되기도 한다. 그리고, 공정에 따라서 회전형 분사 장치와 서셉터(40) 사이의 거리를 조절할 필요가 있으므로, 서셉터(40)를 상하 방향으로 이동할 수 있도록 구성할 수 있다. 한편, 공정챔버(C) 하부에는 내부 가스를 배출하기 위한 가스 배출구(80)가 제공된다.In contrast, the susceptor 40 is rotated instead of fixing the injection device, and may be configured to inject the reaction gas and the purge gas onto the substrate (W). In addition, since the distance between the rotatable injection device and the susceptor 40 needs to be adjusted according to the process, the susceptor 40 may be configured to move in the vertical direction. On the other hand, the gas discharge port 80 for discharging the internal gas is provided below the process chamber (C).

상기 서셉터(40)는 공정챔버(C) 내에서 수평으로 설치되며, 서셉터(40) 상에는 기판(W)이 안착되는 복수 개의 지지부(50)가 놓여진다. 그리고, 상기 지지부(50)의 상부에는 기판(W)의 수평 이동을 방지하기 위한 고정부(60)가 설치된다.The susceptor 40 is horizontally installed in the process chamber C, and a plurality of support parts 50 on which the substrate W is seated are placed on the susceptor 40. In addition, a fixing part 60 is installed on the support part 50 to prevent horizontal movement of the substrate W.

한편, 상기 서셉터(40) 상에서 지지부(50)가 놓이지 않은 부분에는 가스 배출구(80)와 연통하는 관통구멍이 형성될 수 있다. 그리고, 박막의 재증착을 억제시키기 위하여 지지부(50) 내부에는 히터(70)가 구비되어 기판(W)을 가열시킬 수 있도록 한다.Meanwhile, a through hole communicating with the gas outlet 80 may be formed at a portion of the susceptor 40 where the support part 50 is not placed. In addition, a heater 70 is provided inside the support part 50 to suppress the redeposition of the thin film so that the substrate W can be heated.

도 2는 반응가스와 퍼지가스를 분사하는 분사기(30)의 구성을 나타낸 도면으로서, 상기 분사기(30)는 내부에 반응가스와 퍼지가스가 유동하는 유로가 형성되며, 각각의 분사기(30) 끝단 측에는 가스 분사를 위한 복수 개의 분사공(32)이 형성된다.2 is a view showing the configuration of the injector 30 for injecting the reaction gas and purge gas, the injector 30 is formed with a flow path through which the reaction gas and purge gas flow, the end of each injector 30 On the side, a plurality of injection holes 32 for gas injection are formed.

이와 같이 구성된 분사기(30)는 축방향으로 회전하면서 반응가스 또는 퍼지 가스를 지지부(50)에 안착된 기판(W)에 분사하게 된다. 구체적으로, 도 2에 도시된 바와 같은 분사기(30)는 각각 제1반응가스, 퍼지가스, 제2반응가스 및 퍼지가스를 공급받아 기판(W)에 분사하며, 이에 따라 각각의 기판(W)에는 반응가스와 퍼지가스가 순차적으로 분사되어 성막 과정을 수행하게 된다.The injector 30 configured as described above sprays the reaction gas or purge gas onto the substrate W seated on the support part 50 while rotating in the axial direction. Specifically, the injector 30 as shown in FIG. 2 receives the first reaction gas, the purge gas, the second reaction gas, and the purge gas, respectively, and injects them onto the substrate W. Accordingly, each substrate W In the reaction gas and the purge gas is sequentially injected to perform the film forming process.

하지만, 종래의 박막 증착장치는 분사기가 고속으로 회전하면서 반응가스와 퍼지가스를 분사하기 때문에, 서로 다른 종류의 반응가스가 서로 혼합되어 농도가 희석되고 불필요한 반응이 일어나서, 결과적으로 기판의 증착품질이 떨어뜨리는 문제점이 있었다.However, in the conventional thin film deposition apparatus, since the injector rotates at high speed to inject the reaction gas and the purge gas, different kinds of reaction gases are mixed with each other, the concentration is diluted, and unnecessary reaction occurs, resulting in the deposition quality of the substrate. There was a problem falling.

그리고, 이러한 반응가스의 혼합현상은, 기판상에 분사된 반응가스들이 원활히 외부로 배출되지 못하고 공정 챔버 내에 잔류하면서 더욱 심각해지게 된다.In addition, the reaction phenomenon of the reaction gas becomes more serious as the reaction gases injected onto the substrate are not smoothly discharged to the outside and remain in the process chamber.

본 발명은 상기한 종래의 문제점을 해결하기 위한 것으로서, 본 발명의 목적은 분사된 가스를 효과적으로 흡입하여 분사된 가스를 효과적으로 배출할 수 있는 박막 증착장치를 제공하기 위한 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a thin film deposition apparatus that can effectively inhale the injected gas to effectively discharge the injected gas.

본 발명의 다른 목적은, 서로 다른 반응가스가 혼합되는 현상을 방지하여 증착품질을 향상시키는 박막 증착장치를 제공하기 위한 것이다.Another object of the present invention is to provide a thin film deposition apparatus which improves deposition quality by preventing a phenomenon in which different reaction gases are mixed.

상기와 같은 목적을 달성하기 위하여, 본 발명은 하우징, 상기 하우징 내로 가스를 분사하는 분사유닛, 상기 하우징 내에 구비되며, 복수 개의 기판이 원주 방향을 따라 안착되는 서셉터 및 상기 복수 개의 기판이 형성하는 중앙의 빈공간에 상기 서셉터와 별도의 부재로 구비되며, 측부에 상기 하우징의 외부와 연통하는 다수의 흡입홀이 형성되되, 상기 흡입홀의 형성 높이는 가스 배출이 원활하도록 상기 서셉터에 안착되는 기판과 같거나 더 높은 위치에 형성된 흡입유닛을 포함하는 박막 증착장치를 제공한다.In order to achieve the above object, the present invention provides a housing, an injection unit for injecting gas into the housing, provided in the housing, the susceptor is a plurality of substrates are seated in the circumferential direction and the plurality of substrates are formed The substrate is provided as a separate member from the susceptor in the empty space at the center, and a plurality of suction holes are formed at a side thereof to communicate with the outside of the housing. Provided is a thin film deposition apparatus including a suction unit formed at a position equal to or higher.

그리고, 상기 흡입유닛은 상기 하우징의 상부에서 하부로 돌출 형성될 수 있다. 그리고 상기 흡입유닛의 측면부에 일정 간격으로 상기 흡입홀이 형성될 수 있다.The suction unit may protrude downward from an upper portion of the housing. And the suction hole may be formed at a predetermined interval on the side of the suction unit.

삭제delete

또는, 상기 흡입유닛은 상기 서셉터에서 상부로 돌출 형성되며, 상기 흡입유닛의 측면부에 일정 간격으로 상기 흡입홀이 형성될 수 있다.Alternatively, the suction unit may protrude upward from the susceptor, and the suction holes may be formed at predetermined intervals on the side surface of the suction unit.

그리고, 상기 흡입유닛은 예를 들어 원통 형상으로 구성될 수 있으며, 상기 서셉터에서 상기 기판이 안착되는 부위에는 서셉터 표면에서 소정 높이 돌출된 지지부가 구비될 수 있다.In addition, the suction unit may be configured, for example, in a cylindrical shape, and a support portion protruding a predetermined height from the susceptor surface may be provided at a portion where the substrate is seated in the susceptor.

상기의 구성을 가지는 본 발명에 따른 박막 증착장치는 다음과 같은 효과가 있다.The thin film deposition apparatus according to the present invention having the above configuration has the following effects.

첫째, 원주 방향을 따라 배치되는 기판의 중앙 빈공간에 잔류가스 흡입을 위한 유로를 형성함으로써, 가스 배출을 위한 별도의 공간을 차지하지 않으면서도 기판에 분사된 잔류가스를 효과적으로 배출할 수 있는 이점이 있다.First, by forming a flow path for suction of residual gas in the central empty space of the substrate disposed along the circumferential direction, it is possible to effectively discharge the residual gas injected to the substrate without taking a separate space for gas discharge have.

이에 따라, 기판에 분사된 반응가스들이 서로 혼합되는 현상을 현저히 줄일 수 있는 이점이 있다.Accordingly, there is an advantage that can significantly reduce the phenomenon that the reaction gases injected to the substrate are mixed with each other.

특히, 흡입홀과 연통하는 흡입유로를 외부의 진공영역과 연통되도록 하여, 보다 효율적으로 잔류가스를 흡입할 수 있게 된다. 또한, 흡입홀을 기판보다 더 높은 위치에 배치하여, 잔류가스를 보다 원활히 배출할 수 있게 된다.In particular, the suction flow passage communicating with the suction hole is allowed to communicate with the external vacuum region, so that the residual gas can be sucked more efficiently. In addition, by placing the suction hole at a position higher than the substrate, it is possible to discharge the residual gas more smoothly.

둘째, 기판에 분사된 반응가스들이 잔류함으로 인해 발생하는 반응가스들 간에 혼합현상을 현저히 줄임으로써, 기판의 박막 증착을 효과적으로 수행할 수 있고 결과적으로 증착 품질을 향상시킬 수 있는 이점이 있다.Secondly, by significantly reducing the mixing phenomenon between the reaction gases generated by the remaining of the reactive gases injected into the substrate, it is possible to effectively perform the thin film deposition of the substrate and as a result has the advantage of improving the deposition quality.

이하 본 발명의 목적이 구체적으로 실현될 수 있는 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명한다. 본 실시예를 설명함에 있어서, 동일 구성 에 대해서는 동일 명칭 및 동일 부호가 사용되며 이에 따른 부가적인 설명은 생략하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of this embodiment, the same name and the same reference numerals are used for the same configuration and additional description thereof will be omitted.

도 3을 참조하여, 본 발명의 제1실시예에 따른 박막 증착장치의 구성을 설명하면 다음과 같다.Referring to Figure 3, the configuration of a thin film deposition apparatus according to a first embodiment of the present invention will be described.

본 실시예에 따른 박막 증착장치는 크게 하우징(160), 분사유닛(150), 서셉터(110) 및 흡입유닛(130)을 포함하여 구성된다.The thin film deposition apparatus according to the present exemplary embodiment includes a housing 160, an injection unit 150, a susceptor 110, and a suction unit 130.

상기 하우징(160)은, 기판(W)이 놓여지는 서셉터(110)를 수용하도록 내부에 가스 분사를 위한 공간인 공정챔버(C)를 제공한다.The housing 160 provides a process chamber C, which is a space for gas injection, to accommodate the susceptor 110 on which the substrate W is placed.

상기 분사유닛(150)은 하우징(160) 내부의 공정챔버(C)로 반응가스 또는 퍼지가스를 분사하여 기판(W)에 박막 증착을 수행하며, 본 실시예에서 상기 분사유닛(150)에는 외부의 가스 공급관과 연결되는 공급홀(152) 및 공급된 가스를 기판상에 분사하기 위한 다수의 분사홀(156)이 형성된다.The injection unit 150 injects reaction gas or purge gas into the process chamber C inside the housing 160 to perform thin film deposition on the substrate W. In the present embodiment, the injection unit 150 is external to the injection unit 150. Supply holes 152 connected to the gas supply pipe of the plurality of injection holes 156 for injecting the supplied gas on the substrate is formed.

한편, 본 실시예에서는 도 3에 도시된 바와 같이 상기 공급홀(152)과 분사홀(156) 사이에 유로홀(154)이 형성된다. Meanwhile, in this embodiment, as shown in FIG. 3, a flow path hole 154 is formed between the supply hole 152 and the injection hole 156.

여기서, 분사유닛(150)의 세부적인 구성은 다양하게 변형이 가능하며, 예를 들어, 도 1 및 도 2에 도시된 형태의 회전형 분사 방식이나, 공정챔버(C) 전체에 서로 다른 종류의 가스를 순차적으로 분사하는 방식 등이 적용될 수 있다.Here, the detailed configuration of the injection unit 150 may be modified in various ways, for example, the rotary injection method of the type shown in Figures 1 and 2, or different types of the whole process chamber (C) A method of spraying the gas sequentially may be applied.

상기 서셉터(110)는 복수 개의 기판(W)이 안착될 수 있도록 수평 방향으로 배치되며, 도 4는 서셉터(110)가 원판 형상으로 이루어져 복수 개의 기판(W)이 원주 방향을 따라 배치된다.The susceptor 110 is disposed in a horizontal direction to allow the plurality of substrates W to be seated, and FIG. 4 shows that the susceptor 110 is formed in a disc shape, and thus the plurality of substrates W are disposed along the circumferential direction. .

본 실시예에서는 도 4에 도시된 바와 같이, 서셉터(110) 상에 복수 개의 지지부(120)가 구비되고, 이러한 각각의 지지부(120)에 기판(W)이 장착된 형태로 구성된다.In this embodiment, as shown in FIG. 4, a plurality of support parts 120 are provided on the susceptor 110, and the substrates W are mounted on the respective support parts 120.

한편, 복수 개의 기판이 원주 방향을 따라 배치될 때, 중앙부에는 빈공간이 형성된다. 상기 흡입유닛(130)은 이렇게 복수 개의 기판(W)이 원주 방향을 따라 배치되고 남은 중앙의 빈공간에 구비되어, 기판(W)에 분사된 잔류가스를 흡입하는 역할을 수행한다.On the other hand, when a plurality of substrates are arranged along the circumferential direction, an empty space is formed in the center portion. The suction unit 130 is thus disposed in the circumferential direction of the plurality of substrates (W) is provided in the remaining empty space in the center, and serves to suck the residual gas injected to the substrate (W).

이와 같이, 상기 흡입유닛(130)은 기판이 배치되고 남은 빈공간에 구비되어, 상기 흡입유닛(130)의 배치를 위한 별도의 공간을 차지하지 않아 공간 활용도를 높일 수 있게 된다.In this way, the suction unit 130 is provided in the remaining empty space after the substrate is disposed, it does not occupy a separate space for the placement of the suction unit 130 can increase the space utilization.

상기 흡입유닛(130)의 구체적인 형상은 다양하게 변형이 가능하며, 본 실시예에서는 도 3에 도시된 바와 같이, 상기 서셉터(110)와 별도의 부재로 구성되어 상기 하우징(160)의 상부에서 하부로 돌출된 형태로 이루어진다.The specific shape of the suction unit 130 can be variously modified, as shown in FIG. 3 in this embodiment, the susceptor 110 is composed of a separate member from the upper portion of the housing 160 It is made in the form of protruding downward.

그리고, 상기 흡입유닛(130)의 외측면에는 흡입홀(132)이 형성되어, 기판(W)으로 분사된 잔류가스를 흡입한다. 본 실시예에서 상기 흡입홀(132)은 복수 개로 이루어져, 상기 흡입유닛(130)의 측면부에 일정 간격을 두고 배치된다.In addition, a suction hole 132 is formed at an outer surface of the suction unit 130 to suck residual gas injected into the substrate W. In this embodiment, the suction holes 132 are formed in plural, and are disposed at predetermined intervals on the side portions of the suction unit 130.

여기서, 상기 흡입홀(132)은 도 4에 도시된 바와 같이, 기판(W)으로 분사된 가스가 효과적으로 배출될 수 있도록 상기 서셉터(110)에 안착된 기판(W)보다 높은 위치에 형성되는 것이 바람직하다.As shown in FIG. 4, the suction hole 132 is formed at a position higher than the substrate W seated on the susceptor 110 so that the gas injected to the substrate W can be effectively discharged. It is preferable.

한편, 상기 흡입유닛(130)의 내부에는, 상술한 흡입홀(132)과 연통하는 내부 유로(134)가 형성되어 있어, 흡입홀(132)을 통해 흡입된 잔류가스를 외부와 연결된 안내관(138)으로 배출되도록 한다. 여기서, 상기 안내관(138)은 외부의 진공 영역과 연통되어 있어, 상기 흡입유닛(130) 상의 흡입홀(132)이 진공 흡입이 되도록 하는 것이 원활한 가스 배출을 위해 바람직하다.On the other hand, the inside of the suction unit 130, the inner passage 134 is formed in communication with the above-described suction hole 132, the guide pipe connected to the outside the residual gas sucked through the suction hole 132 ( 138). Here, the guide tube 138 is in communication with the external vacuum area, it is preferable for the suction hole 132 on the suction unit 130 to be a vacuum suction for smooth gas discharge.

상기 흡입유닛 내의 내부유로(134)의 구체적인 배치는 설계 조건 등에 따라 다양하게 변형이 가능하다.The specific arrangement of the internal passage 134 in the suction unit may be variously modified according to design conditions.

그리고, 본 실시예에서는 상기 하우징(160)의 측면부에 보조 흡입부(140)가 구비되어, 상기 흡입유닛(130)과 함께 잔류가스의 외부 배출을 보조할 수 있도록 구성된다.In this embodiment, the auxiliary suction unit 140 is provided at the side surface of the housing 160, and is configured to assist the external discharge of residual gas together with the suction unit 130.

상기 보조 흡입부(140)는, 보조 흡입홀(142) 및 상기 보조 흡입홀(142)에서 연결되며, 외부와 연통하는 보조 유로(144)를 포함한다.The auxiliary suction unit 140 may be connected to the auxiliary suction hole 142 and the auxiliary suction hole 142 and include an auxiliary flow path 144 communicating with the outside.

다음으로, 도 4 및 도 5를 참조하여, 본 발명의 제2실시예에 따른 박막 증착장치의 구성을 설명하면 다음과 같다. 여기서, 도 4는 본 실시예에 따른 박막 증착장치의 일부를 나타내는 구성도이고, 도 5는 도 4의 서셉터 및 흡입유닛을 나타내는 사시도이다.Next, referring to Figures 4 and 5, the configuration of a thin film deposition apparatus according to a second embodiment of the present invention will be described. 4 is a configuration diagram illustrating a part of the thin film deposition apparatus according to the present embodiment, and FIG. 5 is a perspective view illustrating the susceptor and the suction unit of FIG. 4.

본 실시예도 상술한 제1실시예와 유사하게, 하우징(260), 분사유닛(150; 도 3 참조), 서셉터(210) 및 흡입유닛(230)을 포함하여 구성된다. 그리고, 본 실시예에서도 상기 흡입유닛(130)은 기판(W)이 원주방향을 배치되면서 남게 되는 중앙의 빈공간상에 배치된다.Similar to the first embodiment described above, the present embodiment also includes a housing 260, an injection unit 150 (see FIG. 3), a susceptor 210, and a suction unit 230. In addition, in the present embodiment, the suction unit 130 is disposed on a central empty space in which the substrate W remains while being disposed in the circumferential direction.

따라서, 본 실시예에서도 상기 흡입유닛(230)은 기판이 배치되고 남은 빈공 간에 구비되기 때문에, 상기 흡입유닛(230)의 배치를 위한 별도의 공간을 차지하지 않아 공간 활용도를 높일 수 있게 된다.Therefore, in the present embodiment, since the suction unit 230 is provided between the substrate and the remaining empty space, the suction unit 230 does not occupy a separate space for the placement of the suction unit 230, thereby increasing the space utilization.

한편, 본 실시예에서는 상기 흡입유닛(230)이, 서셉터(210)와 별도 부재로 이루어져 상기 서셉터(210)의 상부에 구비되는 대신, 상기 서셉터(210) 상에서 상기 서셉터(210)의 상부로 일정 높이만큼 돌출 형성된다.Meanwhile, in the present embodiment, the suction unit 230 is formed as a separate member from the susceptor 210 and is provided on the susceptor 210, instead of the susceptor 210 on the susceptor 210. Protruding by a certain height to the top of the formed.

상기 흡입유닛(230)은, 도 4 및 도 5에 도시된 바와 같이, 상기 서셉터(210)의 바닥에서 일정 높이만큼 상부로 돌출되어 있으며, 상기 흡입유닛(230)의 외측면에는 복수 개의 흡입홀(232)이 일정 간격을 두고 배치되어 있다.As shown in FIGS. 4 and 5, the suction unit 230 protrudes upward from the bottom of the susceptor 210 by a predetermined height, and a plurality of suctions are provided on the outer surface of the suction unit 230. The holes 232 are arranged at regular intervals.

상기 흡입홀(232)은 상기 흡입유닛(230)의 내부에 형성된 내부유로(234)와 상기 서셉터(210)의 내부에 위치한 흡입유로(112)와 연결되어 있어, 상기 공정챔버(C) 내의 잔류가스가 흡입홀(132), 내부유로(234) 및 흡입유로(112)를 순차적으로 경유하여 외부로 배출될 수 있도록 구성된다.The suction hole 232 is connected to the internal flow path 234 formed in the suction unit 230 and the suction flow path 112 located in the susceptor 210, and thus within the process chamber C. Residual gas is configured to be discharged to the outside via the suction hole 132, the inner passage 234 and the suction passage 112 in sequence.

한편, 상기 하우징(160)의 일측에는 보조적으로 잔류가스의 배출을 위한 가스 배출구(240)가 형성되어 있어, 서셉터(210) 중앙부의 흡입유닛(230)과 함께 기판(W)상에 분사된 잔류가스가 원활하게 외부로 배출될 수 있도록 한다.On the other hand, one side of the housing 160 has a secondary gas outlet 240 for assisting the discharge of residual gas is formed, and is injected onto the substrate (W) with the suction unit 230 in the center of the susceptor 210 Allow residual gas to be discharged to the outside smoothly.

그리고, 상술한 실시예와 유사하게, 상기 서셉터(210)와 기판(W) 사이에는, 기판(W)의 안착을 위한 지지부(220)가 구비될 수 있다.And, similar to the above-described embodiment, between the susceptor 210 and the substrate (W), a support 220 for mounting the substrate (W) may be provided.

본 발명은 상술한 실시예에 한정되지 않으며, 첨부된 청구범위에서 알 수 있는 바와 같이 본 발명이 속한 분야의 통상의 지식을 가진 자는 본 발명의 정신을 벗어나지 않고 변형이 가능하고 이러한 변형은 본 발명의 범위에 속한다.The present invention is not limited to the above-described embodiments, and as can be seen in the appended claims, those skilled in the art can make modifications without departing from the spirit of the present invention, and such modifications are possible. Belongs to the scope of.

도 1은 종래 박막 증착장치를 나타내는 구성도;1 is a block diagram showing a conventional thin film deposition apparatus;

도 2는 도 1의 분사기를 나타내는 일부 사시도;2 is a partial perspective view of the injector of FIG. 1;

도 3은 본 발명의 제1실시예에 따른 박막 증착장치를 나타내는 단면도;3 is a cross-sectional view showing a thin film deposition apparatus according to a first embodiment of the present invention;

도 4는 본 발명의 제2실시예에 따른 박막 증착장치를 나타내는 단면도;4 is a cross-sectional view showing a thin film deposition apparatus according to a second embodiment of the present invention;

도 5는 도 4의 서셉터 및 흡입유닛을 나타내는 사시도.5 is a perspective view showing the susceptor and the suction unit of FIG.

< 도면의 주요부분에 대한 부호 설명 ><Explanation of Signs of Major Parts of Drawings>

110: 서셉터 120: 지지부110: susceptor 120: support

130: 흡입유닛 132: 흡입홀130: suction unit 132: suction hole

134: 내부유로 138: 안내관134: internal passage 138: guide

140: 보조 배출부 150: 분사유닛140: auxiliary outlet 150: injection unit

152: 공급홀 154: 연통홀152: supply hole 154: communication hole

156: 분사홀 C: 공정챔버156: injection hole C: process chamber

W: 기판W: Substrate

Claims (5)

하우징;housing; 상기 하우징 내로 가스를 분사하는 분사유닛;An injection unit for injecting gas into the housing; 상기 하우징 내에 구비되며, 복수 개의 기판이 원주 방향을 따라 안착되는 서셉터; 및A susceptor provided in the housing and having a plurality of substrates seated in a circumferential direction; And 상기 복수 개의 기판이 형성하는 중앙의 빈공간에서 상기 하우징의 상부에서 하부로 돌출 형성되고 상기 서셉터와 별도의 부재로 구비되며, 측면부에 일정 간격으로 상기 하우징의 외부와 연통하는 다수의 흡입홀이 형성되되, 상기 흡입홀의 형성 높이는 상기 서셉터에 안착되는 기판과 같거나 더 높은 위치에 형성된 흡입유닛;A plurality of suction holes protruding from the upper portion of the housing to the lower portion in a central empty space formed by the plurality of substrates and provided as a separate member from the susceptor, and communicating with the outside of the housing at predetermined intervals on the side portion A suction unit formed at a position equal to or higher than a substrate seated on the susceptor; 을 포함하는 박막 증착장치.Thin film deposition apparatus comprising a. 삭제delete 삭제delete 삭제delete 삭제delete
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130137328A (en) * 2012-06-07 2013-12-17 주성엔지니어링(주) Apparatus and method of processing substrate
US8955547B2 (en) 2011-10-19 2015-02-17 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
US9109754B2 (en) 2011-10-19 2015-08-18 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
US9353440B2 (en) 2013-12-20 2016-05-31 Applied Materials, Inc. Dual-direction chemical delivery system for ALD/CVD chambers
US9514933B2 (en) 2014-01-05 2016-12-06 Applied Materials, Inc. Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
US9631277B2 (en) 2011-03-01 2017-04-25 Applied Materials, Inc. Atomic layer deposition carousel with continuous rotation and methods of use
US9748125B2 (en) 2012-01-31 2017-08-29 Applied Materials, Inc. Continuous substrate processing system
US9831109B2 (en) 2013-03-11 2017-11-28 Applied Materials, Inc. High temperature process chamber lid
WO2019045340A1 (en) * 2017-08-30 2019-03-07 주성엔지니어링(주) Substrate placing means and substrate treating device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102540125B1 (en) 2017-08-30 2023-06-05 주성엔지니어링(주) Substrate safe arrival device and apparatus for substrate processing apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11246973A (en) 1998-03-02 1999-09-14 Nec Kyushu Ltd Cvd apparatus and method for controlling gas
JP2001073146A (en) * 1999-08-31 2001-03-21 Sony Corp Thin film deposition system and method
JP2004063783A (en) 2002-07-29 2004-02-26 Nanoteco Corp Cvd equipment, substrate for semiconductor crystal growth, and method of manufacturing semiconductor device
JP2007067213A (en) * 2005-08-31 2007-03-15 Mitsubishi Electric Corp Vapor-phase epitaxy device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11246973A (en) 1998-03-02 1999-09-14 Nec Kyushu Ltd Cvd apparatus and method for controlling gas
JP2001073146A (en) * 1999-08-31 2001-03-21 Sony Corp Thin film deposition system and method
JP2004063783A (en) 2002-07-29 2004-02-26 Nanoteco Corp Cvd equipment, substrate for semiconductor crystal growth, and method of manufacturing semiconductor device
JP2007067213A (en) * 2005-08-31 2007-03-15 Mitsubishi Electric Corp Vapor-phase epitaxy device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9631277B2 (en) 2011-03-01 2017-04-25 Applied Materials, Inc. Atomic layer deposition carousel with continuous rotation and methods of use
US8955547B2 (en) 2011-10-19 2015-02-17 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
US9109754B2 (en) 2011-10-19 2015-08-18 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
USRE48994E1 (en) 2011-10-19 2022-03-29 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
USRE47440E1 (en) 2011-10-19 2019-06-18 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
US9748125B2 (en) 2012-01-31 2017-08-29 Applied Materials, Inc. Continuous substrate processing system
US10236198B2 (en) 2012-01-31 2019-03-19 Applied Materials, Inc. Methods for the continuous processing of substrates
KR101887072B1 (en) * 2012-06-07 2018-08-09 주성엔지니어링(주) Apparatus and method of processing substrate
KR20130137328A (en) * 2012-06-07 2013-12-17 주성엔지니어링(주) Apparatus and method of processing substrate
US9831109B2 (en) 2013-03-11 2017-11-28 Applied Materials, Inc. High temperature process chamber lid
US10879090B2 (en) 2013-03-11 2020-12-29 Applied Materials, Inc. High temperature process chamber lid
US9765432B2 (en) 2013-12-20 2017-09-19 Applied Materials, Inc. Dual-direction chemical delivery system for ALD/CVD chambers
US10400335B2 (en) 2013-12-20 2019-09-03 Applied Materials, Inc. Dual-direction chemical delivery system for ALD/CVD chambers
US9353440B2 (en) 2013-12-20 2016-05-31 Applied Materials, Inc. Dual-direction chemical delivery system for ALD/CVD chambers
US9514933B2 (en) 2014-01-05 2016-12-06 Applied Materials, Inc. Film deposition using spatial atomic layer deposition or pulsed chemical vapor deposition
WO2019045340A1 (en) * 2017-08-30 2019-03-07 주성엔지니어링(주) Substrate placing means and substrate treating device

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