KR100933905B1 - 터널링 배리어 상부에 전계 분산층을 구비하는 전하 트래핑소자 - Google Patents
터널링 배리어 상부에 전계 분산층을 구비하는 전하 트래핑소자 Download PDFInfo
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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Abstract
Description
Claims (27)
- 반도체 기판 상의 메모리 셀들의 어레이;상기 기판 내에 채널 영역에 의해 분리된 소스 영역 및 드레인 영역, 상기 채널 영역 상부에 배치되고 3 내지 6 나노미터 범위 내의 유효 산화막 두께를 구비하는 터널링 배리어 유전 구조체, 상기 터널링 배리어 유전 구조체 상부 및 상기 채널 영역 상부에 배치된 도전층, 상기 도전층 상부 및 상기 채널 영역 상부에 배치된 전하 트래핑 구조체, 상기 전하 트래핑 구조체 상부에 배치된 상부 유전 구조체, 및 상기 상부 유전 구조체 상부 및 상기 채널 영역 상부에 배치된 상부 도전층을 포함하는 상기 메모리 셀;행(row) 디코더;열(column) 디코더;감지 증폭기들;적어도 하나의 입력 포트;적어도 하나의 출력 포트;데이터 입력(data-in) 구조체들; 및바이어스 배열 상태 기계(bias arrangement state machine)을 포함하는 메모리 소자.
- 청구항 1에 있어서,상기 채널 영역은 상기 소스와 드레인 사이에 길이를 갖고, 상기 길이에 직교하는 폭을 갖되, 상기 폭은 45 나노미터 미만인 메모리 소자.
- 청구항 1에 있어서,상기 터널링 배리어 유전 구조체, 상기 도전층, 상기 전하 트래핑 구조체 및 상기 상부 유전 구조체를 포함하는 상기 채널 상부 및 상기 상부 도전층 아래의 다층 적층체는 유효 산화막 두께를 갖고, 상기 채널 영역은 상기 소스 및 드레인 사이에 길이 및 상기 다층 적층체의 유효 산화막 두께의 1.5배 미만인 상기 길이에 직교하는 폭을 갖는 메모리 소자.
- 청구항 1에 있어서,상기 채널 영역은 상기 소스와 드레인 사이에 길이 및 상기 길이에 직교하는 폭을 구비하는 활성 영역을 갖고, 상기 도전층은 상기 채널 영역의 활성 영역의 폭과 동일한 폭을 갖는 메모리 소자.
- 청구항 1에 있어서,상기 터널링 배리어 유전 구조체는 실리콘 산화물(SiO2)을 포함하는 메모리 소자.
- 청구항 1에 있어서,상기 터널링 배리어 유전 구조체는 실리콘 산질화물(SiON)을 포함하는 메모리 소자.
- 청구항 1에 있어서,상기 터널링 배리어 유전 구조체는 밴드갭 공학기술로 제조된 터널링 배리어 구조체를 포함하되, 상기 밴드갭 공학기술로 제조된 터널링 배리어 구조체는 복수개의 유전층들을 적층함으로써 형성되는 메모리 소자.
- 청구항 1에 있어서,상기 도전층은 도핑된 반도체 재료를 포함하는 메모리 소자.
- 청구항 1에 있어서,상기 도전층은 6 나노미터 미만의 두께를 갖는 도핑된 폴리실리콘을 포함하는 메모리 소자.
- 청구항 1에 있어서,상기 도전층은 금속을 포함하는 메모리 소자.
- 청구항 1에 있어서,상기 전하 트래핑 구조체는 실리콘 질화물을 포함하는 메모리 소자.
- 청구항 1에 있어서,상기 전하 트래핑 구조체는 실리콘 산화층(SiO2) 및 상기 실리콘 산화층 상부에 배치된 실리콘 질화층을 포함하는 메모리 소자.
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- 반도체 기판의 표면 상에 3 내지 6 나노미터 범위 내의 유효 산화막 두께를 구비하는 터널링 배리어 유전 구조체를 형성하고, 상기 터널링 배리어 유전 구조체 상에 도전층을 형성하고, 상기 도전층 상에 전하 트래핑 구조체를 형성하고, 상기 전하 트래핑 구조체 상에 상부 유전 구조체를 형성하고, 상기 상부 유전 구조체 상에 상부 도전층을 형성하고, 상기 상부 도전층 상에 하드 마스크층을 형성하고;복수개의 메모리 셀들 사이에 모든 층들 및 모든 구조체들을 관통하고 상기 기판 내로 들어가는 복수개의 분리 구조체들을 유전재료로 형성하고;상기 하드 마스크층을 스트립하고;상기 터널링 배리어 유전 구조체 및 상기 터널링 배리어 유전 구조체 상부에 배치된 모든 층들 및 모든 구조체들을 관통하여 식각함으로써 메모리 셀들의 복수개의 행들을 형성하고;소스 영역 및 드레인 영역의 쌍들이 메모리 셀 채널 영역에 의해 분리되고, 상기 채널 영역이 상기 터널링 배리어 유전 구조체 아래에 있도록, 상기 반도체 기판의 표면 내에 도펀트들을 임플란트하여 상기 소스 영역 및 드레인 영역을 형성하는 것을 포함하는 메모리 셀들의 어레이를 제조하기 위한 방법.
- 청구항 23에 있어서,상기 하드 마스크층은 100 나노미터의 두께를 갖는 실리콘 질화물을 포함하는 메모리 셀들의 어레이를 제조하기 위한 방법.
- 청구항 23에 있어서,상기 유전재료의 분리 구조체들은 실리콘 산화물(SiO2)을 포함하는 메모리 셀들의 어레이를 제조하기 위한 방법.
- 청구항 23에 있어서,화학적 기계적 연마를 포함하여 상기 복수개의 분리 구조체들의 형성에 기인한 여분의 산화물을 제거하는 것을 포함하는 메모리 셀들의 어레이를 제조하기 위한 방법.
- 청구항 23에 있어서,상기 하드 마스크층의 스트립 후에, 습식 플루오르화수소 용액 침지 식각을 포함하여 상기 상부 도전층으로부터 산화물을 제거하는 것을 포함하는 메모리 셀들의 어레이를 제조하기 위한 방법.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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US86658906P | 2006-11-20 | 2006-11-20 | |
US60/866,589 | 2006-11-20 | ||
US86666106P | 2006-11-21 | 2006-11-21 | |
US60/866,661 | 2006-11-21 | ||
US11/756,559 US8101989B2 (en) | 2006-11-20 | 2007-05-31 | Charge trapping devices with field distribution layer over tunneling barrier |
US11/756,559 | 2007-05-31 |
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KR1020080072686A Division KR100942928B1 (ko) | 2006-11-20 | 2008-07-25 | 터널링 배리어 상부에 전계 분산층을 구비하는 전하 트래핑소자 |
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8482052B2 (en) | 2005-01-03 | 2013-07-09 | Macronix International Co., Ltd. | Silicon on insulator and thin film transistor bandgap engineered split gate memory |
US7763927B2 (en) | 2005-12-15 | 2010-07-27 | Macronix International Co., Ltd. | Non-volatile memory device having a nitride-oxide dielectric layer |
US7692223B2 (en) * | 2006-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
US7746694B2 (en) * | 2006-07-10 | 2010-06-29 | Macronix International Co., Ltd. | Nonvolatile memory array having modified channel region interface |
US7838923B2 (en) | 2007-08-09 | 2010-11-23 | Macronix International Co., Ltd. | Lateral pocket implant charge trapping devices |
US7816727B2 (en) * | 2007-08-27 | 2010-10-19 | Macronix International Co., Ltd. | High-κ capped blocking dielectric bandgap engineered SONOS and MONOS |
US7643349B2 (en) * | 2007-10-18 | 2010-01-05 | Macronix International Co., Ltd. | Efficient erase algorithm for SONOS-type NAND flash |
US7848148B2 (en) * | 2007-10-18 | 2010-12-07 | Macronix International Co., Ltd. | One-transistor cell semiconductor on insulator random access memory |
US7768838B2 (en) * | 2007-10-30 | 2010-08-03 | Micron Technology, Inc. | Operating memory cells |
US8008707B2 (en) | 2007-12-14 | 2011-08-30 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device provided with charge storage layer in memory cell |
US7973357B2 (en) * | 2007-12-20 | 2011-07-05 | Samsung Electronics Co., Ltd. | Non-volatile memory devices |
US8068370B2 (en) * | 2008-04-18 | 2011-11-29 | Macronix International Co., Ltd. | Floating gate memory device with interpoly charge trapping structure |
US8081516B2 (en) * | 2009-01-02 | 2011-12-20 | Macronix International Co., Ltd. | Method and apparatus to suppress fringing field interference of charge trapping NAND memory |
US8861273B2 (en) * | 2009-04-21 | 2014-10-14 | Macronix International Co., Ltd. | Bandgap engineered charge trapping memory in two-transistor nor architecture |
JP2011071240A (ja) * | 2009-09-24 | 2011-04-07 | Toshiba Corp | 半導体記憶装置、及びその製造方法 |
KR101102406B1 (ko) * | 2010-06-15 | 2012-01-05 | 서울대학교산학협력단 | 전하 저장층을 구비한 단전자 트랜지스터 및 그 제조방법 |
US8916920B2 (en) * | 2011-07-19 | 2014-12-23 | Macronix International Co., Ltd. | Memory structure with planar upper surface |
US9559113B2 (en) | 2014-05-01 | 2017-01-31 | Macronix International Co., Ltd. | SSL/GSL gate oxide in 3D vertical channel NAND |
US9337255B1 (en) | 2014-11-21 | 2016-05-10 | International Business Machines Corporation | Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels |
US9899485B2 (en) | 2016-06-07 | 2018-02-20 | International Business Machines Corporation | Spatially decoupled floating gate semiconductor device |
KR20210015078A (ko) | 2019-07-31 | 2021-02-10 | 삼성전자주식회사 | 반도체 장치 및 이의 동작 방법 |
KR20210028521A (ko) | 2019-09-04 | 2021-03-12 | 삼성전자주식회사 | 수직형 비휘발성 메모리 장치 및 수직형 비휘발성 메모리 장치의 프로그램 방법 |
CN111477625B (zh) * | 2020-04-27 | 2023-02-07 | 复旦大学 | 一种基于缺陷俘获材料的半浮栅存储器及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005184029A (ja) * | 2005-02-18 | 2005-07-07 | Renesas Technology Corp | 不揮発性記憶素子及び半導体集積回路装置 |
KR20050121603A (ko) * | 2004-06-22 | 2005-12-27 | 삼성전자주식회사 | 프로파일드 터널 장벽을 갖는 플래시 메모리 소자 및 그제조방법 |
KR20060037372A (ko) * | 2003-07-18 | 2006-05-03 | 프리스케일 세미컨덕터, 인크. | 이산 전하 저장 소자들을 갖는 메모리의 프로그래밍 |
JP2006190990A (ja) * | 2004-12-10 | 2006-07-20 | Toshiba Corp | 半導体装置 |
Family Cites Families (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US903486A (en) * | 1908-02-19 | 1908-11-10 | James F Laytham | Portable skating-rink. |
JPS4886485A (ko) | 1972-02-17 | 1973-11-15 | ||
USD253781S (en) * | 1977-07-12 | 1979-12-25 | Baltimore Aircoil Company, Inc. | Water injected cooling tower |
US4217601A (en) | 1979-02-15 | 1980-08-12 | International Business Machines Corporation | Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure |
JPS5955071A (ja) | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
US4911443A (en) * | 1985-12-04 | 1990-03-27 | Foster James F | Football game system and method of play |
USD307326S (en) * | 1987-04-23 | 1990-04-17 | Smith Lynn F | Swimming pool |
JPH0582795A (ja) | 1991-08-22 | 1993-04-02 | Rohm Co Ltd | 半導体記憶装置 |
JPH0555596A (ja) | 1991-08-22 | 1993-03-05 | Rohm Co Ltd | 半導体不揮発性記憶装置 |
JPH0886485A (ja) | 1994-09-19 | 1996-04-02 | Sekisui Chem Co Ltd | レンジフード換気扇 |
USD394907S (en) * | 1996-10-18 | 1998-06-02 | Pacific Industries, Inc. | Pool |
EP0843360A1 (en) | 1996-11-15 | 1998-05-20 | Hitachi Europe Limited | Memory device |
JPH1140682A (ja) | 1997-07-18 | 1999-02-12 | Sony Corp | 不揮発性半導体記憶装置及びその製造方法 |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US5851881A (en) * | 1997-10-06 | 1998-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making monos flash memory for multi-level logic |
FR2770328B1 (fr) | 1997-10-29 | 2001-11-23 | Sgs Thomson Microelectronics | Point memoire remanent |
JPH11150195A (ja) * | 1997-11-19 | 1999-06-02 | Nec Corp | 半導体装置及びその製造方法 |
US6026026A (en) | 1997-12-05 | 2000-02-15 | Hyundai Electronics America, Inc. | Self-convergence of post-erase threshold voltages in a flash memory cell using transient response |
JPH11177067A (ja) | 1997-12-09 | 1999-07-02 | Sony Corp | メモリ素子およびメモリアレイ |
US6074917A (en) | 1998-06-16 | 2000-06-13 | Advanced Micro Devices, Inc. | LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices |
KR100294691B1 (ko) | 1998-06-29 | 2001-07-12 | 김영환 | 다중층양자점을이용한메모리소자및제조방법 |
JP2004006882A (ja) * | 1999-06-04 | 2004-01-08 | Matsushita Electric Ind Co Ltd | 半導体素子 |
US6677640B1 (en) * | 2000-03-01 | 2004-01-13 | Micron Technology, Inc. | Memory cell with tight coupling |
JP2002184873A (ja) * | 2000-10-03 | 2002-06-28 | Sony Corp | 不揮発性半導体記憶装置及びその製造方法 |
US7332768B2 (en) * | 2001-04-27 | 2008-02-19 | Interuniversitair Microelektronica Centrum (Imec) | Non-volatile memory devices |
US6720630B2 (en) | 2001-05-30 | 2004-04-13 | International Business Machines Corporation | Structure and method for MOSFET with metallic gate electrode |
US20020185764A1 (en) | 2001-06-12 | 2002-12-12 | Griggs Stephen R. | Vacuum detection apparatus and method |
JP4901048B2 (ja) | 2001-06-28 | 2012-03-21 | 三星電子株式会社 | 浮遊トラップ型不揮発性メモリ素子 |
US6891262B2 (en) | 2001-07-19 | 2005-05-10 | Sony Corporation | Semiconductor device and method of producing the same |
KR100395762B1 (ko) | 2001-07-31 | 2003-08-21 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
US6709928B1 (en) | 2001-07-31 | 2004-03-23 | Cypress Semiconductor Corporation | Semiconductor device having silicon-rich layer and method of manufacturing such a device |
KR100407573B1 (ko) | 2001-08-09 | 2003-11-28 | 삼성전자주식회사 | 부유 트랩형 비휘발성 메모리 장치 형성 방법 |
JP2003068893A (ja) | 2001-08-28 | 2003-03-07 | Hitachi Ltd | 不揮発性記憶素子及び半導体集積回路 |
US7476925B2 (en) | 2001-08-30 | 2009-01-13 | Micron Technology, Inc. | Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators |
US7012297B2 (en) | 2001-08-30 | 2006-03-14 | Micron Technology, Inc. | Scalable flash/NV structures and devices with extended endurance |
US6512696B1 (en) | 2001-11-13 | 2003-01-28 | Macronix International Co., Ltd. | Method of programming and erasing a SNNNS type non-volatile memory cell |
US7115469B1 (en) | 2001-12-17 | 2006-10-03 | Spansion, Llc | Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process |
US6605840B1 (en) | 2002-02-07 | 2003-08-12 | Ching-Yuan Wu | Scalable multi-bit flash memory cell and its memory array |
US6784480B2 (en) | 2002-02-12 | 2004-08-31 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
TW527704B (en) * | 2002-03-19 | 2003-04-11 | Macronix Int Co Ltd | Mask ROM structure and its manufacturing method |
JP4104133B2 (ja) | 2002-05-31 | 2008-06-18 | スパンション エルエルシー | 不揮発性半導体記憶装置及びその製造方法 |
US7042045B2 (en) | 2002-06-04 | 2006-05-09 | Samsung Electronics Co., Ltd. | Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure |
US6897533B1 (en) | 2002-09-18 | 2005-05-24 | Advanced Micro Devices, Inc. | Multi-bit silicon nitride charge-trapping non-volatile memory cell |
KR100446632B1 (ko) | 2002-10-14 | 2004-09-04 | 삼성전자주식회사 | 비휘발성 sonsnos 메모리 |
US6912163B2 (en) | 2003-01-14 | 2005-06-28 | Fasl, Llc | Memory device having high work function gate and method of erasing same |
US6815764B2 (en) | 2003-03-17 | 2004-11-09 | Samsung Electronics Co., Ltd. | Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same |
KR100553687B1 (ko) | 2003-05-29 | 2006-02-24 | 삼성전자주식회사 | 축소가능한 2개의 트랜지스터 기억 소자 및 그 형성방법 |
JP4040534B2 (ja) | 2003-06-04 | 2008-01-30 | 株式会社東芝 | 半導体記憶装置 |
US7115942B2 (en) | 2004-07-01 | 2006-10-03 | Chih-Hsin Wang | Method and apparatus for nonvolatile memory |
US20040256679A1 (en) | 2003-06-17 | 2004-12-23 | Hu Yongjun J. | Dual work function metal gates and method of forming |
KR100562743B1 (ko) | 2003-10-06 | 2006-03-21 | 동부아남반도체 주식회사 | 플래시 메모리 소자의 제조방법 |
KR100579844B1 (ko) | 2003-11-05 | 2006-05-12 | 동부일렉트로닉스 주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
US7115509B2 (en) * | 2003-11-17 | 2006-10-03 | Micron Technology, Inc. | Method for forming polysilicon local interconnects |
JP2005197624A (ja) | 2004-01-09 | 2005-07-21 | Genusion:Kk | 不揮発性記憶装置 |
US7151692B2 (en) | 2004-01-27 | 2006-12-19 | Macronix International Co., Ltd. | Operation scheme for programming charge trapping non-volatile memory |
US7187590B2 (en) | 2004-04-26 | 2007-03-06 | Macronix International Co., Ltd. | Method and system for self-convergent erase in charge trapping memory cells |
US7164603B2 (en) | 2004-04-26 | 2007-01-16 | Yen-Hao Shih | Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory |
US7075828B2 (en) | 2004-04-26 | 2006-07-11 | Macronix International Co., Intl. | Operation scheme with charge balancing erase for charge trapping non-volatile memory |
US7209390B2 (en) | 2004-04-26 | 2007-04-24 | Macronix International Co., Ltd. | Operation scheme for spectrum shift in charge trapping non-volatile memory |
US7133313B2 (en) | 2004-04-26 | 2006-11-07 | Macronix International Co., Ltd. | Operation scheme with charge balancing for charge trapping non-volatile memory |
US7133316B2 (en) | 2004-06-02 | 2006-11-07 | Macronix International Co., Ltd. | Program/erase method for P-channel charge trapping memory device |
US7190614B2 (en) | 2004-06-17 | 2007-03-13 | Macronix International Co., Ltd. | Operation scheme for programming charge trapping non-volatile memory |
JP2006120834A (ja) | 2004-10-21 | 2006-05-11 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
US20060198189A1 (en) | 2005-01-03 | 2006-09-07 | Macronix International Co., Ltd. | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US7642585B2 (en) | 2005-01-03 | 2010-01-05 | Macronix International Co., Ltd. | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US8264028B2 (en) | 2005-01-03 | 2012-09-11 | Macronix International Co., Ltd. | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US7315474B2 (en) | 2005-01-03 | 2008-01-01 | Macronix International Co., Ltd | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
KR100652401B1 (ko) * | 2005-02-16 | 2006-12-01 | 삼성전자주식회사 | 복수의 트랩막들을 포함하는 비휘발성 메모리 소자 |
JP2005184028A (ja) * | 2005-02-18 | 2005-07-07 | Renesas Technology Corp | 不揮発性記憶素子 |
US7279740B2 (en) | 2005-05-12 | 2007-10-09 | Micron Technology, Inc. | Band-engineered multi-gated non-volatile memory device with enhanced attributes |
US7612403B2 (en) | 2005-05-17 | 2009-11-03 | Micron Technology, Inc. | Low power non-volatile memory and gate stack |
US7636257B2 (en) | 2005-06-10 | 2009-12-22 | Macronix International Co., Ltd. | Methods of operating p-channel non-volatile memory devices |
US7829938B2 (en) | 2005-07-14 | 2010-11-09 | Micron Technology, Inc. | High density NAND non-volatile memory device |
US7528425B2 (en) * | 2005-07-29 | 2009-05-05 | Infineon Technologies Ag | Semiconductor memory with charge-trapping stack arrangement |
US7576386B2 (en) | 2005-08-04 | 2009-08-18 | Macronix International Co., Ltd. | Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer |
US7468299B2 (en) | 2005-08-04 | 2008-12-23 | Macronix International Co., Ltd. | Non-volatile memory cells and methods of manufacturing the same |
US7629641B2 (en) | 2005-08-31 | 2009-12-08 | Micron Technology, Inc. | Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection |
US7429767B2 (en) * | 2005-09-01 | 2008-09-30 | Micron Technology, Inc. | High performance multi-level non-volatile memory device |
US8846549B2 (en) | 2005-09-27 | 2014-09-30 | Macronix International Co., Ltd. | Method of forming bottom oxide for nitride flash memory |
TWI300931B (en) * | 2006-06-20 | 2008-09-11 | Macronix Int Co Ltd | Method of operating non-volatile memory device |
JP2012009700A (ja) * | 2010-06-25 | 2012-01-12 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
-
2007
- 2007-05-31 US US11/756,559 patent/US8101989B2/en active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060037372A (ko) * | 2003-07-18 | 2006-05-03 | 프리스케일 세미컨덕터, 인크. | 이산 전하 저장 소자들을 갖는 메모리의 프로그래밍 |
KR20050121603A (ko) * | 2004-06-22 | 2005-12-27 | 삼성전자주식회사 | 프로파일드 터널 장벽을 갖는 플래시 메모리 소자 및 그제조방법 |
JP2006190990A (ja) * | 2004-12-10 | 2006-07-20 | Toshiba Corp | 半導体装置 |
JP2005184029A (ja) * | 2005-02-18 | 2005-07-07 | Renesas Technology Corp | 不揮発性記憶素子及び半導体集積回路装置 |
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