KR100925475B1 - 박막 트랜지스터 표시판 및 액정 표시 장치 - Google Patents
박막 트랜지스터 표시판 및 액정 표시 장치 Download PDFInfo
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- KR100925475B1 KR100925475B1 KR1020090031489A KR20090031489A KR100925475B1 KR 100925475 B1 KR100925475 B1 KR 100925475B1 KR 1020090031489 A KR1020090031489 A KR 1020090031489A KR 20090031489 A KR20090031489 A KR 20090031489A KR 100925475 B1 KR100925475 B1 KR 100925475B1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (8)
- 절연 기판,상기 절연 기판 위에 형성되어 있는 제1 신호선,상기 제1 신호선과 절연되어 교차하고 있는 제2 신호선,상기 제1 신호선과 상기 제2 신호선이 교차하여 정의하는 각 화소 영역마다 형성되어 있는 제1 화소 전극,상기 제1 신호선, 상기 제2 신호선 및 제1 화소 전극에 3단자가 각각 연결되어 있는 제1 박막 트랜지스터,상기 화소 영역마다 형성되어 있는 제2 화소 전극,상기 제1 신호선, 상기 제2 신호선 및 상기 제2 화소 전극에 3단자가 각각 연결되어 있는 제2 박막 트랜지스터를 포함하고, 상기 제1 박막 트랜지스터의 채널의 저항과 상기 제2 박막 트랜지스터의 채널의 저항은 서로 다르며, 제1 박막 트랜지스터와 상기 제2 박막 트랜지스터는 소스 전극을 공유하는 박막 트랜지스터 표시판.
- 삭제
- 제1항에서,상기 제1 박막 트랜지스터의 3단자를 각각 제1 게이트 전극, 소스 전극 및 제1 드레인 전극이라 하고, 상기 제2 박막 트랜지스터의 3단자를 제2 게이트 전극, 소스 전극 및 제2 드레인 전극이라 할 때, 상기 소스 전극과 상기 제1 드레인 전극 사이의 거리보다 상기 소스 전극과 상기 제2 드레인 전극 사이의 거리가 더 먼 박막 트랜지스터 표시판.
- 제1항에서,상기 제1 박막 트랜지스터의 3단자를 각각 제1 게이트 전극, 소스 전극 및 제1 드레인 전극이라 하고, 상기 제2 박막 트랜지스터의 3단자를 제2 게이트 전극, 소스 전극 및 제2 드레인 전극이라 할 때, 상기 소스 전극과 상기 제1 드레인 전극이 대향하는 폭이 상기 소스 전극과 상기 제2 드레인 전극이 대향하는 폭에 비하여 더 넓은 박막 트랜지스터 표시판.
- 제1항에서,상기 제1 화소 전극과 상기 제2 화소 전극 중의 적어도 하나는 도메인 분할 수단을 가지는 박막 트랜지스터 표시판.
- 제1 절연 기판,상기 제1 절연 기판 위에 형성되어 있으며 게이트 전극을 포함하는 게이트선,상기 게이트선 위에 형성되어 있는 게이트 절연막,상기 게이트 절연막 위에 형성되어 있는 비정질 규소층,상기 비정질 규소층 위에 형성되어 있는 저항성 접촉층,상기 게이트 절연막 위에 형성되어 있으며 적어도 일부가 상기 저항성 접촉층 위에 형성되어 있는 소스 전극을 포함하는 데이터선,적어도 일부가 상기 저항성 접촉층 위에 형성되어 있으며 상기 소스 전극과 대향하는 제1 및 제2 드레인 전극,상기 데이터선 및 상기 제1 및 제2 드레인 전극 위에 형성되어 있는 보호막,상기 보호막 위에 형성되어 있으며 상기 제1 및 제2 드레인 전극과 각각 연결되어 있는 제1 및 제2 화소 전극,상기 제1 절연 기판과 대향하고 있는 제2 절연 기판,상기 제2 절연 기판 위에 형성되어 있는 공통 전극,상기 제1 절연 기판 및 상기 제2 절연 기판 중의 적어도 하나에 형성되어 있는 제1 도메인 분할 수단,상기 제1 절연 기판 및 상기 제2 절연 기판 중의 적어도 하나에 형성되어 있으며 상기 제1 도메인 분할 수단과 함께 화소 영역을 다수의 소도메인으로 분할하는 제2 도메인 분할 수단을 포함하는 액정 표시 장치.
- 제6항에서,상기 소스 전극과 상기 제1 드레인 전극 사이의 거리보다 상기 소스 전극과 상기 제2 드레인 전극 사이의 거리가 더 먼 액정 표시 장치.
- 제6항에서,상기 소스 전극과 상기 제1 드레인 전극이 대향하는 폭이 상기 소스 전극과 상기 제2 드레인 전극이 대향하는 폭에 비하여 더 넓은 액정 표시 장치.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0772509A (ja) * | 1993-06-14 | 1995-03-17 | Casio Comput Co Ltd | アクティブマトリックス液晶表示素子 |
JPH07152013A (ja) * | 1993-11-29 | 1995-06-16 | Nippondenso Co Ltd | 液晶表示素子 |
KR100218584B1 (ko) * | 1994-09-21 | 1999-09-01 | 모리시타 요이찌 | 액정표시장치 및 그구동방법 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0772509A (ja) * | 1993-06-14 | 1995-03-17 | Casio Comput Co Ltd | アクティブマトリックス液晶表示素子 |
JPH07152013A (ja) * | 1993-11-29 | 1995-06-16 | Nippondenso Co Ltd | 液晶表示素子 |
KR100218584B1 (ko) * | 1994-09-21 | 1999-09-01 | 모리시타 요이찌 | 액정표시장치 및 그구동방법 |
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