KR100915160B1 - 반도체 박막, 박막 트랜지스터, 그것들의 제조 방법 및반도체 박막의 제조 장치 - Google Patents
반도체 박막, 박막 트랜지스터, 그것들의 제조 방법 및반도체 박막의 제조 장치Info
- Publication number
- KR100915160B1 KR100915160B1 KR1020070084821A KR20070084821A KR100915160B1 KR 100915160 B1 KR100915160 B1 KR 100915160B1 KR 1020070084821 A KR1020070084821 A KR 1020070084821A KR 20070084821 A KR20070084821 A KR 20070084821A KR 100915160 B1 KR100915160 B1 KR 100915160B1
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- Prior art keywords
- thin film
- semiconductor thin
- film
- manufacturing
- laser light
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 143
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Classifications
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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Abstract
Description
Claims (15)
- 비정질의 반도체 박막에 레이저광을 조사함으로써 다결정화된 반도체 박막으로서,결정 입자가 격자 모양으로 정렬하고,상기 결정 입자의 크기가 상기 레이저광의 발진 파장의 절반인 것을 특징으로 하는 반도체 박막.
- 제 1항에 있어서,상기 다결정화된 반도체 박막의 표면의 평균 거칠기가 3nm이하인 것을 특징으로 하는 반도체 박막.
- 제 1항 또는 제 2항에 있어서,상기 다결정화된 반도체 박막이 폴리실리콘막으로 형성되는 것을 특징으로 하는 반도체 박막.
- 제 1항 또는 제 2항에 있어서,상기 격자 모양으로 정렬한 결정 입자의 배열 방향이 레이저 조사 주사 방향과 수직인 것을 특징으로 하는 반도체 박막.
- 청구항 1 또는 청구항 2에 기재된 반도체 박막을 가지는 것을 특징으로 하는 박막 트랜지스터.
- 제 5항에 있어서,채널의 방향이 상기 격자 모양으로 정렬한 결정 입자와 같은 방향에 배치되어 있는 것을 특징으로 하는 박막 트랜지스터.
- 기판 위에 비정질 반도체 박막을 형성하는 공정과,상기 비정질 반도체 박막에 레이저광을 조사함으로써, 격자 모양으로 정렬한 결정 입자를 가지는 다결정화된 반도체 박막을 형성하는 공정을 구비하고,상기 결정 입자의 크기는, 조사하는 상기 레이저광의 발진 파장의 절반이 되는 것을 특징으로 하는 반도체 박막의 제조방법.
- 제 7항에 있어서,상기 레이저광이 Nd:YAG레이저의 제2고조파인 것을 특징으로 하는 반도체 박막의 제조방법.
- 제 7항 또는 제 8항에 있어서,상기 다결정화된 반도체 박막의 표면의 평균 거칠기가 3nm이하인 것을 특징으로 하는 반도체 박막의 제조방법.
- 제 7항 또는 제 8항에 있어서,상기 다결정화된 반도체 박막이 폴리실리콘 막으로 형성되는 것을 특징으로 하는 반도체 박막의 제조방법.
- 제 7항 또는 제 8항에 있어서,상기 결정 입자의 배열 방향이 레이저 조사 주사 방향과 수직인 것을 특징으로 하는 반도체 박막의 제조방법.
- 제 7항 또는 제 8항에 있어서,상기 레이저광의 편광이 원 편광으로 되어 있는 것을 특징으로 하는 반도체 박막의 제조방법.
- 청구항 7 또는 청구항 8에 기재된 반도체 박막의 제조방법을 가지는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
- 제 13항에 있어서,상기 반도체 박막의 채널의 방향이, 상기 격자 모양으로 정렬한 결정 입자와 같은 방향에 배치되어 있는 것을 특징으로 하는 박막 트랜지스터의 제조방법.
- 비정질의 반도체 박막에 레이저광을 조사함으로써 다결정화된 반도체 박막의 제조 장치로서,조사되는 상기 레이저광에 원 편광을 일으키는 원 편광수단과,상기 비정질의 반도체 박막상에 상기 레이저광을 조사하는 조사 수단을 구비하고,결정 입자가 격자 모양으로 정렬하고,상기 결정 입자의 크기가 상기 레이저광의 발진 파장의 절반이 되는 것을 특징으로 하는 반도체 박막의 제조장치.
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JP2005064486A (ja) * | 2003-07-31 | 2005-03-10 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ、及びその作製方法、並びに半導体装置の作製方法 |
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JP4987198B2 (ja) | 2001-04-23 | 2012-07-25 | 株式会社ジャパンディスプレイセントラル | 多結晶シリコン薄膜トランジスタの製造方法 |
JP2003001470A (ja) * | 2001-06-22 | 2003-01-08 | Canon Inc | レーザ加工装置およびレーザ加工方法 |
JP4100962B2 (ja) * | 2002-05-30 | 2008-06-11 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2004265897A (ja) * | 2003-01-20 | 2004-09-24 | Sharp Corp | 結晶化半導体素子およびその製造方法ならびに結晶化装置 |
US7358165B2 (en) * | 2003-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing semiconductor device |
JP4602023B2 (ja) * | 2003-07-31 | 2010-12-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7247527B2 (en) * | 2003-07-31 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, and laser irradiation apparatus |
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JP2005166768A (ja) * | 2003-12-01 | 2005-06-23 | Advanced Display Inc | レーザーアニール装置及び薄膜トランジスタ製造方法 |
US7341907B2 (en) * | 2005-04-05 | 2008-03-11 | Applied Materials, Inc. | Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon |
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