KR100892719B1 - 로직 임베디드 cis칩을 사용하기 적합한 이미지 센싱소자 및 이의 제조 방법 - Google Patents
로직 임베디드 cis칩을 사용하기 적합한 이미지 센싱소자 및 이의 제조 방법 Download PDFInfo
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Abstract
Description
Claims (10)
- 광센서 구역이 마련된 기판;상기 기판 위에 형성되며 IMD(inter-metal dielectric)층에 형성된 금속라인들을 포함하는 상호접속구조체;상기 광센서 구역 위의 적어도 하나의 IMD(inter-metal dielectric)층 내에 형성된 적어도 하나의 IMD레벨 마이크로 렌즈; 및상기 IMD층들 사이에 위치하여 0옹스트롱을 초과하고 100옹스트롱 이하로 제한된 순 두께를 가지는 방벽층;을 더 포함하고,상기 적어도 하나의 IMD레벨 마이크로 렌즈는 상기 방벽층의 물질과 같은 초기층의 물질을 가지고 상기 방벽층과 같은 초기층으로 형성된 것을 특징으로 하는 이미지 센싱 소자.
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- 기판 위, 상기 기판 안과 위의 일부에, 또는 상기 기판 안에 형성된 광센서 구역이 마련된 기판;상기 기판에 형성된 상호접속구조체;상기 광센서구역 위에 위치하고 상기 상호접속구조체 위의 레벨에 위치한 상위 레벨 마이크로 렌즈들;구리를 포함하는 금속 라인 위에 형성된 캡층;상기 광센서구역의 적어도 하나의 IMD(inter-metal dielectric)층 내에 형성된 적어도 하나의 IMD레벨 마이크로 렌즈; 및상기 적어도 하나의 IMD레벨 마이크로 렌즈가 위치한 곳을 제외한 광센서 구역에 있는 IMD층들 사이에 마련된 방벽층;을 포함하며,상기 상호접속구조체는 IMD층에 형성된 금속라인들을 포함하고, 상기 금속 라인들의 적어도 하나는 구리를 포함하고,상기 방벽층의 두께는 상기 광센서 구역에서 O옹스트롱을 초과하고 100옹스트롱 이하로 제한된 것을 특징으로 하는 이미지 센싱 소자.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/542,064 | 2006-10-03 | ||
US11/542,064 US7544982B2 (en) | 2006-10-03 | 2006-10-03 | Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same |
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KR20080031101A KR20080031101A (ko) | 2008-04-08 |
KR100892719B1 true KR100892719B1 (ko) | 2009-04-15 |
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KR1020070040764A KR100892719B1 (ko) | 2006-10-03 | 2007-04-26 | 로직 임베디드 cis칩을 사용하기 적합한 이미지 센싱소자 및 이의 제조 방법 |
Country Status (3)
Country | Link |
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US (1) | US7544982B2 (ko) |
KR (1) | KR100892719B1 (ko) |
CN (1) | CN101159278B (ko) |
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JP5428400B2 (ja) * | 2009-03-04 | 2014-02-26 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
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US7544982B2 (en) | 2009-06-09 |
CN101159278B (zh) | 2010-05-26 |
KR20080031101A (ko) | 2008-04-08 |
CN101159278A (zh) | 2008-04-09 |
US20080087921A1 (en) | 2008-04-17 |
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