KR100887401B1 - Module for light emitting diode - Google Patents

Module for light emitting diode Download PDF

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Publication number
KR100887401B1
KR100887401B1 KR1020080107864A KR20080107864A KR100887401B1 KR 100887401 B1 KR100887401 B1 KR 100887401B1 KR 1020080107864 A KR1020080107864 A KR 1020080107864A KR 20080107864 A KR20080107864 A KR 20080107864A KR 100887401 B1 KR100887401 B1 KR 100887401B1
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South Korea
Prior art keywords
light emitting
emitting diode
layer
disposed
lens
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KR1020080107864A
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Korean (ko)
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김형균
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위젠엘이디(주)
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Priority to KR1020080107864A priority Critical patent/KR100887401B1/en
Priority to PCT/KR2008/007288 priority patent/WO2010050644A1/en
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Publication of KR100887401B1 publication Critical patent/KR100887401B1/en

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/28—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
    • F21V7/30—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings the coatings comprising photoluminescent substances
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02—Combinations of only two kinds of elements
    • F21V13/04—Combinations of only two kinds of elements the elements being reflectors and refractors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/89—Metals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V15/00—Protecting lighting devices from damage
    • F21V15/01—Housings, e.g. material or assembling of housing parts
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting diode module capable of generating anion or far infrared ray is provided to increase light transmittance and waterproofing performance by effectively emitting a heat generated in a light emitting diode device. A first phosphor layer(120) is coated on a first lens(110). A second lens(130) is arranged on the first phosphor layer. A protective layer(150) is arranged on the second lens with a trapezoidal shape. A second phosphor layer(140) is coated on a side of the protective layer. A reflection plate(160) is arranged on the second phosphor layer. A light emitting diode device is arranged on a top of the protective layer. A metal slug(170) is arranged on the light emitting diode device.

Description

발광 다이오드 모듈{MODULE FOR LIGHT EMITTING DIODE}Light Emitting Diode Modules {MODULE FOR LIGHT EMITTING DIODE}

본 발명은 발광 다이오드(LED; Light Emitting Diode) 모듈에 관한 것으로서, 보다 상세하게는 발광 다이오드 소자에서 발생되는 열을 효과적으로 방출시키고, 광투과율과 방수 능력을 효과적으로 상승시킬 수 있으면서도, 음이온이나 원적외선을 발생시킬 수 있는 발광 다이오드 모듈에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode (LED) module, and more particularly, to emit heat generated from a light emitting diode device, and to effectively increase light transmittance and waterproof ability, while generating negative ions and far infrared rays. It relates to a light emitting diode module that can be made.

일반적으로, 발광 다이오드는 화합물 반도체에 전압을 인가할 때 발광 현상이 나타나는 특성을 이용하여 개발되었으며, 종래의 광원에 비해 소형이고, 수명이 길며, 전기 에너지가 빛 에너지로 변환되는 효율이 뛰어나다. 최근에 반도체 기술의 발전으로 고휘도의 백색 발광 다이오드에 대한 상용화가 이루어짐에 따라, 이를 이용한 다양한 조명 장치가 등장하고 있는 실정이다.In general, light emitting diodes have been developed using characteristics in which a light emitting phenomenon occurs when a voltage is applied to a compound semiconductor. The light emitting diode is smaller in size, longer in life, and has an excellent efficiency of converting electrical energy into light energy. Recently, due to the development of semiconductor technology and commercialization of high brightness white light emitting diodes, various lighting devices using the same have emerged.

특히, 다수의 발광 다이오드를 배열하는 형태로 고밀도 집적시켜 단위 면적당 광도를 높여줌으로써, 충분히 먼 거리를 조명할 수 있는 조명용 발광 다이오드 모듈에 대한 연구 개발이 활발하게 이루어지고 있다.In particular, by increasing the intensity per unit area by integrating a high density in the form of a plurality of light emitting diodes, the research and development of the light emitting diode module for illumination that can illuminate a sufficiently long distance has been actively made.

이러한 발광 다이오드 모듈의 집적 밀도가 증가할수록 동일 면적에서 발생하는 열도 증가되므로, 이러한 열로 인하여 발광 다이오드 소자에 손상이 발생될 수 있는 문제점이 있다.As the integration density of the LED module increases, heat generated in the same area also increases, which may cause damage to the LED device.

본 발명이 이루고자 하는 기술적 과제는 발광 다이오드 소자에서 발생되는 열을 효과적으로 방출시키고, 광투과율과 방수 능력을 효과적으로 상승시킬 수 있으면서도, 음이온이나 원적외선을 발생시킬 수 있는 발광 다이오드 모듈을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a light emitting diode module capable of effectively dissipating heat generated from a light emitting diode device, effectively increasing light transmittance and waterproofing ability, and generating negative ions and far infrared rays.

본 발명이 이루고자 하는 기술적 과제들은 이상에서 언급한 기술적 과제들로 제한되지 않으며, 언급되지 않은 또 다른 기술적 과제들은 아래의 기재로부터 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다.Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned above will be clearly understood by those skilled in the art from the following description. Could be.

상기와 같은 목적을 달성하기 위하여 본 발명의 일 실시예에 따른 발광 다이오드 모듈은 제 1 렌즈, 상기 제 1 렌즈 상에 도포되어 있는 제 1 형광체층, 상기 제 1 형광체층 상에 배치되어 있는 제 2 렌즈, 상기 제 2 렌즈 상에 사다리꼴 형상으로 배치되어 있는 보호층, 상기 보호층의 옆면에 도포되어 있는 제 2 형광체층, 상기 제 2 형광체층 상에 배치되어 있는 반사판(160), 상기 보호층의 상면에 배치되어 있는 발광 다이오드 소자 및 상기 발광 다이오드 소자 상에 배치되어 있는 메탈 슬러그를 포함한다.In order to achieve the above object, a light emitting diode module according to an exemplary embodiment of the present invention includes a first lens, a first phosphor layer coated on the first lens, and a second phosphor disposed on the first phosphor layer. A protective layer disposed in a trapezoidal shape on the lens, the second lens, a second phosphor layer applied to the side surface of the protective layer, a reflector plate 160 disposed on the second phosphor layer, and the protective layer. It includes a light emitting diode element disposed on the upper surface and a metal slug disposed on the light emitting diode element.

본 발명의 실시예들에 따른 발광 다이오드 모듈은 발광 다이오드 소자에서 발생되는 열을 효과적으로 방출시키고, 광투과율과 방수 능력을 효과적으로 상승시킬 수 있으면서도, 음이온이나 원적외선을 발생시킬 수 있다.The light emitting diode module according to the embodiments of the present invention can effectively emit heat generated in the light emitting diode device, and can effectively raise the light transmittance and waterproof ability, and can generate negative ions or far infrared rays.

이하 첨부된 도면을 참조로 본 발명의 바람직한 실시 예를 상세히 설명하기로 한다. 기타 실시예들의 구체적인 사항들은 상세한 설명 및 도면들에 포함되어 있다. 본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성 요소를 지칭한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Specific details of other embodiments are included in the detailed description and the drawings. Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. Like reference numerals refer to like elements throughout.

도 1은 본 발명의 일 실시예에 따른 발광 다이오드 모듈의 단면도이다.1 is a cross-sectional view of a light emitting diode module according to an embodiment of the present invention.

본 발명의 일 실시예에 따른 발광 다이오드 모듈은 도 1에 도시된 것처럼, 제 1 렌즈(110), 제 1 형광체층(120), 제 2 렌즈(130), 보호층(150), 제 2 형광체층(140), 반사판(160), 발광 다이오드 소자(210), 메탈 슬러그(170), 절연층(180), 히트 파이프(190), 친환경층(220)을 포함하여 구성될 수 있다.As shown in FIG. 1, a light emitting diode module according to an embodiment of the present invention includes a first lens 110, a first phosphor layer 120, a second lens 130, a protective layer 150, and a second phosphor. The layer 140, the reflecting plate 160, the light emitting diode device 210, the metal slug 170, the insulating layer 180, the heat pipe 190, and the environmentally friendly layer 220 may be configured.

제 1 형광체층(120)은 제 1 렌즈(110) 상에 도포되어 있으며, 제 2 렌즈(130)는 제 1 형광체층(120) 상에 배치되어 있고, 보호층(150)은 제 2 렌즈(130) 상에 사다리꼴 형상으로 배치되어 있다. 여기에서 보호층(150)은 투명한 실리콘 갤로 형성될 수 있으며, 제 2 렌즈(130)나 제 1 형광체층(120)을 보호하고, 광투과율을 향상시킬 수 있다.The first phosphor layer 120 is applied on the first lens 110, the second lens 130 is disposed on the first phosphor layer 120, and the protective layer 150 is formed on the second lens ( 130 is arranged in a trapezoidal shape. The protective layer 150 may be formed of a transparent silicon gal, may protect the second lens 130 or the first phosphor layer 120, and may improve light transmittance.

제 2 형광체층(140)은 보호층(150)의 옆면에 도포되어 있고, 반사판(160)은 제 2 형광체층(140) 상에 배치되어 있으며, 발광 다이오드 소자(210)는 보호층(150)의 상면에 배치되어 있고, 메탈 슬러그(170)는 발광 다이오드 소자(210) 상에 배치되어 있다.The second phosphor layer 140 is applied to the side surface of the protective layer 150, the reflecting plate 160 is disposed on the second phosphor layer 140, and the light emitting diode element 210 is the protective layer 150. The metal slug 170 is disposed on the light emitting diode element 210.

여기에서, 제 1 형광체층(120)과 제 2 형광체층(140)은 포스퍼를 포함하며, 발광 다이오드 소자(210)는 청색 발광 다이오드 소자(210)이다. 이러한 제 1 형광체층(120), 제 2 형광체층(140) 및 발광 다이오드 소자(210)를 이용하여 백색의 광원으로 사용될 수 있다.Here, the first phosphor layer 120 and the second phosphor layer 140 include a phosphor, and the light emitting diode element 210 is a blue light emitting diode element 210. The first phosphor layer 120, the second phosphor layer 140, and the light emitting diode device 210 may be used as white light sources.

또한, 제 1 형광체층(120)과 제 2 형광체층(140)을 반사판(160)이 둘러싸고 있으므로, 방수 능력을 향상시킬 수 있다.In addition, since the reflecting plate 160 surrounds the first phosphor layer 120 and the second phosphor layer 140, the waterproof performance may be improved.

한편, 메탈 슬러그(170)는 구리이며, 발광 다이오드 소자(210)에 접착이 용이하도록 은이 도금되어 있고, 솔더를 이용하여 메탈 슬러그(170)에 발광 다이오드 소자(210)가 접촉되어 있다. 그럼으로써, 발광 다이오드 소자(210)에 발생되는 열을 메탈 슬러그(170)를 통해서 효과적으로 방출할 수 있다.Meanwhile, the metal slug 170 is copper, and silver is plated to facilitate adhesion to the light emitting diode element 210, and the light emitting diode element 210 is in contact with the metal slug 170 using solder. As a result, heat generated in the light emitting diode device 210 may be effectively released through the metal slug 170.

또한, 메탈 슬러그(170)의 상면에는 홈이 형성되어 있으며, 홈의 표면을 따라서 절연층(180)이 형성되어 있고, 절연층(180) 상에는 히트 파이프(190)가 배치되어 있다. 여기에서, 절연층(180)은 AlN, BN 또는 Al2O3를 포함하고, 히트 파이프(190)는 구리인 것이 바람직하다. 절연층(180)을 통해서 메탈 슬러그(170)의 열을 히트 파이프(190)로 전달할 수 있다.In addition, a groove is formed in an upper surface of the metal slug 170, an insulating layer 180 is formed along the surface of the groove, and a heat pipe 190 is disposed on the insulating layer 180. Here, the insulating layer 180 includes AlN, BN or Al 2 O 3, and the heat pipe 190 is preferably copper. The heat of the metal slug 170 may be transferred to the heat pipe 190 through the insulating layer 180.

한편, 히트 파이프(190) 상에는 음이온이나 원적외선을 발생시키는 친환경층(220)이 배치되어 있으며, 이러한 친환경층(220)은 매직스톤, 토루마린, 고령토 및 맥반석의 혼합물을 포함한다. 히트 파이프(190)를 통해서 열이 친환경층(220)으로 전달되면, 친환경층(220)을 통해서 열을 방출할 수 있을 뿐만 아니라 친환경층(220)은 음이온이나 원적외선을 발생시킴으로써, 쾌적한 환경을 조성할 수 있다.On the other hand, the heat pipe 190 is disposed on the environmentally friendly layer 220 for generating negative ions or far infrared rays, such an environmentally friendly layer 220 includes a mixture of magic stone, tourmaline, kaolin and elvan. When heat is transferred to the eco-friendly layer 220 through the heat pipe 190, not only can emit heat through the eco-friendly layer 220, but also the eco-friendly layer 220 generates anion or far infrared rays, thereby creating a pleasant environment. can do.

이상, 본 발명을 본 발명의 원리를 예시하기 위한 바람직한 실시예와 관련하여 설명하고 도시하였지만, 본 발명은 그와 같이 도시되고 설명된 그대로의 구성 및 작용으로 한정되는 것이 아니다.While the invention has been described and illustrated in connection with a preferred embodiment for illustrating the principles of the invention, the invention is not limited to the configuration and operation as such is shown and described.

오히려, 첨부된 청구범위의 사상 및 범주를 일탈함이 없이 본 발명에 대한 다수의 변경 및 수정이 가능함을 당업자들은 잘 이해할 수 있을 것이다.Rather, those skilled in the art will appreciate that many modifications and variations of the present invention are possible without departing from the spirit and scope of the appended claims.

따라서, 그러한 모든 적절한 변경 및 수정과 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다.Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.

도 1은 본 발명의 일 실시예에 따른 발광 다이오드 모듈의 단면도.1 is a cross-sectional view of a light emitting diode module according to an embodiment of the present invention.

Claims (9)

제 1 렌즈;A first lens; 상기 제 1 렌즈 상에 도포되어 있는 제 1 형광체층;A first phosphor layer coated on the first lens; 상기 제 1 형광체층 상에 배치되어 있는 제 2 렌즈;A second lens disposed on the first phosphor layer; 상기 제 2 렌즈 상에 사다리꼴 형상으로 배치되어 있는 보호층;A protective layer disposed on the second lens in a trapezoidal shape; 상기 보호층의 옆면에 도포되어 있는 제 2 형광체층;A second phosphor layer applied to side surfaces of the protective layer; 상기 제 2 형광체층 상에 배치되어 있는 반사판;A reflector disposed on the second phosphor layer; 상기 보호층의 상면에 배치되어 있는 발광 다이오드 소자; 및A light emitting diode element disposed on an upper surface of the protective layer; And 상기 발광 다이오드 소자 상에 배치되어 있는 메탈 슬러그를 포함하는 발광 다이오드 모듈.A light emitting diode module comprising a metal slug disposed on the light emitting diode element. 제1항에 있어서,The method of claim 1, 상기 보호층은 실리콘 갤로 형성되는 것을 특징으로 하는 발광 다이오드 모듈.The protective layer is a light emitting diode module, characterized in that formed of silicon gal. 제1항에 있어서,The method of claim 1, 상기 발광 다이오드 소자는 청색 발광 다이오드 소자이며, 상기 제 1 및 제 2 형광체층은 포스퍼(phosphor)를 포함하는 것을 특징으로 하는 발광 다이오드 모듈.The light emitting diode device is a blue light emitting diode device, wherein the first and the second phosphor layer comprises a phosphor (phosphor). 제1항에 있어서,The method of claim 1, 상기 메탈 슬러그는 구리인 것을 특징으로 하는 발광 다이오드 모듈.The metal slug is copper, characterized in that the light emitting diode module. 제1항에 있어서,The method of claim 1, 상기 메탈 슬러그의 상면에는 홈이 형성되어 있고, 상기 홈의 표면을 따라서 절연층이 형성되어 있으며, 상기 절연층 상에는 히트 파이프가 배치되어 있는 것을 특징으로 하는 발광 다이오드 모듈.And a groove is formed on an upper surface of the metal slug, an insulating layer is formed along the surface of the groove, and a heat pipe is disposed on the insulating layer. 제5항에 있어서,The method of claim 5, 상기 절연층은 AlN, BN 또는 Al2O3를 포함하는 것을 특징으로 하는 발광 다이오드 모듈.The insulating layer is a light emitting diode module comprising AlN, BN or Al2O3. 제5항에 있어서,The method of claim 5, 상기 히트 파이프는 구리인 것을 특징으로 하는 발광 다이오드 모듈.The heat pipe is a light emitting diode module, characterized in that the copper. 제1항에 있어서,The method of claim 1, 상기 메탈 슬러그 상에는 음이온이나 원적외선을 발생시키는 친환경층이 배 치되어 있는 것을 특징으로 하는 발광 다이오드 모듈.The light emitting diode module, characterized in that the environmentally friendly layer for generating anion or far infrared rays is disposed on the metal slug. 제8항에 있어서,The method of claim 8, 상기 친환경층은 매직스톤, 토루마린, 고령토 및 맥반석의 혼합물인 것을 특징으로 하는 발광 다이오드 모듈.The eco-friendly layer is a light emitting diode module, characterized in that the mixture of magic stone, tourmaline, kaolin and elvan.
KR1020080107864A 2008-10-31 2008-10-31 Module for light emitting diode KR100887401B1 (en)

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