KR100873236B1 - Apparatus for treating wafer - Google Patents

Apparatus for treating wafer Download PDF

Info

Publication number
KR100873236B1
KR100873236B1 KR1020070058586A KR20070058586A KR100873236B1 KR 100873236 B1 KR100873236 B1 KR 100873236B1 KR 1020070058586 A KR1020070058586 A KR 1020070058586A KR 20070058586 A KR20070058586 A KR 20070058586A KR 100873236 B1 KR100873236 B1 KR 100873236B1
Authority
KR
South Korea
Prior art keywords
wafer
block
polishing
demounter
cleaning
Prior art date
Application number
KR1020070058586A
Other languages
Korean (ko)
Inventor
최철호
Original Assignee
주식회사 실트론
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 실트론 filed Critical 주식회사 실트론
Priority to KR1020070058586A priority Critical patent/KR100873236B1/en
Application granted granted Critical
Publication of KR100873236B1 publication Critical patent/KR100873236B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67353—Closed carriers specially adapted for a single substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A wafer processing apparatus for preventing contamination of a cleaned wafer during a transfer process is disclosed. The wafer processing apparatus is formed to support one surface of a wafer, and includes a block in which a plurality of wafers are coupled, a cleaning unit in which the wafer cleaning process is performed, and a ring corresponding to the block is opened and coupled along the block circumference. It may include a transfer unit having a shape and coupled to the block and including a demounter for transferring the wafer. Therefore, bubbles or cleaning liquid remaining on the wafer may be prevented from being deposited on the demounter in the process of transferring the wafer on which the polishing or cleaning process of the wafer is performed. In addition, the surface of the wafer is prevented from being contaminated by the bubble or the cleaning liquid remaining on the demounter.

Description

Wafer processing apparatus {Apparatus for Treating Wafer}

1 is a block diagram for explaining a cleaning apparatus according to an embodiment of the present invention;

2 is a side view for explaining a cleaning unit according to an embodiment of the present invention;

3 is a cross-sectional view for explaining a polishing head in the cleaning unit of FIG.

4 is a perspective view illustrating a block for supporting a wafer in the cleaning unit of FIG. 2;

5 is a perspective view for explaining a transfer unit according to an embodiment of the present invention;

6 is a perspective view for explaining the demounter in the transfer unit of FIG.

FIG. 7 is a cross-sectional view illustrating the demounter of FIG. 6.

<Explanation of symbols for the main parts of the drawings>

10: wafer 100: cleaning unit

111: polishing table 113: polishing pad

115: first drive shaft 120: first drive unit

131: polishing head 132: wax

133: block 135: second drive shaft

140: second drive unit 200: transfer unit

210: Demounter 211: Frame

213: spacer 220: feed roller

221: shaft 223: roller

The present invention relates to a wafer processing apparatus, and more particularly, to a wafer processing apparatus having a transfer unit for transferring a cleaned wafer.

In recent years, with the rapid spread of information media such as computers, semiconductor devices are also rapidly developing. In terms of its function, the semiconductor device is required to operate at a high speed and to have a large storage capacity. In response to these demands, semiconductor processing technologies have been developed in the direction of improving integration, reliability, response speed, and the like of the semiconductor device.

In general, a semiconductor device includes a Fab process for forming an electrical circuit including electrical elements on a silicon wafer used as a wafer, and an electrical die for inspecting electrical characteristics of the semiconductor devices formed in the fab process. sorting) and a package assembly process for encapsulating and individualizing the semiconductor devices with epoxy resin, respectively.

The fab process includes a deposition process for forming a film on a wafer, chemical mechanical polishing (CMP) for planarizing the film, and photolithography for forming a photoresist pattern on the film. ), An etching process for forming the film into a pattern having electrical characteristics by using the photoresist pattern, an ion implantation process for implanting specific ions into a predetermined region of the wafer, and a process for removing impurities on the wafer. A cleaning step, and an inspection step for inspecting the surface of the wafer on which the film or pattern is formed.

The CMP process is a method of planarizing a wafer surface through a chemical and physical method.

A polishing apparatus for performing the conventional CMP process includes a polishing pad, a polishing head for fixing the wafer, and a driving portion for rotating the polishing head relative to the polishing pad. Then, a slurry (a slurry) that is a polishing agent is provided between the polishing pad and the wafer. That is, the wafer having the thin film to be flattened is supplied with an abrasive while the thin film is in contact with the surface of the polishing pad to chemically react with the thin film, while simultaneously rotating the wafer to physically remove the uneven portion of the thin film. To flatten.

After the polishing process for the wafer is completed, a cleaning process for removing a cleaning liquid or an abrasive used in the polishing process from the wafer is performed. For example, in the cleaning process, deionized water (DI water) or pure water may be supplied onto the wafer using a cleaning solution to remove the abrasive or particles generated in the polishing process.

The conventional CMP polishing apparatus inserts a polishing unit in which a polishing process is performed on the wafer, and a wafer (hereinafter referred to as an untreated wafer) in which the polishing process is to be performed into the polishing unit, and the polishing process is performed from the polishing unit. It includes a transfer unit for taking out the completed wafer (hereinafter referred to as processing wafer).

On the other hand, when the cleaning process of the processed wafer is completed, the wafer is withdrawn from the polishing unit by the transfer unit and loaded into a cassette for storing the wafer.

However, since the wafer is transferred after the cleaning process is not dried, bubbles or cleaning liquid used in the cleaning process are buried on the surface of the transfer unit. In addition, there is a problem that bubbles or cleaning liquid on the transfer unit are buried on the surface of the wafer to be subsequently transferred. Therefore, when a bubble or a cleaning liquid is applied to the polishing surface of the wafer, staining may occur after drying of the wafer, which may lower the efficiency of the cleaning process and reduce the quality of the wafer. In particular, the bubble or the cleaning liquid acts as a contaminant in a subsequent semiconductor manufacturing process or wafer processing process, resulting in defects. In addition, the wafer contaminated in the transfer process as described above must perform the cleaning process again, resulting in waste of cost, resources and time.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a wafer processing apparatus having a transfer unit for transferring a polished and cleaned wafer without contamination.

In order to achieve the above object, the wafer processing apparatus is formed to support one surface of a wafer, and a block to which a plurality of wafers are coupled, a cleaning unit to which the wafer cleaning process is performed, and a portion corresponding to the block is opened. And a transfer unit including a demounter coupled to the block and coupled to the block to transfer the wafer.

In an embodiment, the cleaning unit may be a CMP polishing apparatus in which a chemical mechanical polishing process is performed on the wafer. Here, the block may be coupled to a plurality of wafers. In addition, the wafer may be bonded to the block using wax.

In an embodiment, the demounter may have a ring shape corresponding to the block. In addition, the demounter may include a spacer spaced apart from the block and the demounter.

In an embodiment, the transfer unit may be provided with a transfer rail for moving the demounter is mounted on the demounter substantially. In addition, the transfer unit may include a transfer robot for entering and exiting the wafer or the block from the cleaning unit.

In an embodiment, the wafer processing apparatus or the transfer unit may be provided with a drain for discharging the cleaning liquid introduced into the wafer.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments.

Hereinafter, a cleaning apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 7.

First, referring to FIG. 1, in the cleaning apparatus according to the present invention, the cleaning unit 100 in which the cleaning process is performed on the wafer 10 and the cleaning unit 100 is introduced into the wafer 10, or The cleaning unit 100 may include a transfer unit 200 for withdrawing the wafer 10 from the cleaning unit 100.

For example, the cleaning unit 100 may be a polishing apparatus in which a chemical mechanical polishing (CMP) process is performed on the wafer 10. That is, in the cleaning unit 100, a CMP polishing process is performed on the wafer 10, and a cleaning process of removing an abrasive, etc. used in the CMP polishing process is performed. Hereinafter, the CMP polishing apparatus will be described as an example.

However, the present invention is not limited thereto, and the cleaning unit 100 may include a cleaning apparatus in which a wet cleaning process is performed on the wafer 10. In addition, the cleaning unit 100 may include a process device in which a semiconductor manufacturing process such as etching or deposition is performed.

The cleaning unit 100 may be a single type polishing apparatus in which the wafer 10 is polished one by one. Alternatively, the cleaning unit 100 may be a batch type polishing apparatus in which a polishing process is simultaneously performed on a plurality of wafers 10. In this embodiment, a batch polishing apparatus will be described as an example.

The transfer unit 200 draws a wafer (hereinafter referred to as a processing wafer) 10 from which the cleaning process is completed, from the cleaning unit 100, and a cassette (not shown) for storing the wafer 10 or subsequent. The process is transferred to a semiconductor manufacturing apparatus (not shown) to be performed. In addition, the transfer unit 200 may also serve to introduce a wafer (hereinafter referred to as an unprocessed wafer) 10 to be subjected to the polishing process or the cleaning process into the cleaning unit 100.

Although not shown, the processing wafer 10 is transferred from the cleaning unit 100 to the transfer unit 200, and the unprocessed wafer 10 is transferred from the transfer unit 200 to the cleaning unit 100. Transfer robot (not shown) may be provided.

Hereinafter, the cleaning unit 100 will be described in detail with reference to FIGS. 2 and 3.

Referring to the drawings, the cleaning unit 100 includes a polishing pad 113, a polishing table 111 and a polishing head 131.

The polishing pad 113 is a mechanical polishing element that contacts the surface of the wafer 10 to remove the thin film formed on the wafer 10. For example, the polishing pad 113 may be a urethane cloth having fine protrusions formed on a surface thereof, and grooves having various shapes are formed on the surface of the polishing pad 113 to increase polishing efficiency. Can be. In addition, the polishing pad 113 may use different polishing pads 113 according to the type of thin film to be polished.

On the other hand, between the polishing pad 113 and the wafer 10 is provided a slurry (a slurry) which is a polishing agent (polishing agent) for polishing the surface of the wafer 10. Here, the abrasive is a chemical polishing element that chemically reacts with the surface of the wafer 10 to remove the thin film. Therefore, the thin film on the surface of the wafer 10 is rotated by supplying the abrasive while the wafer 10 is in pressure contact with the surface of the polishing pad 113 to rotate the wafer 10 and the polishing pad 113. Chemically and physically removed and planarized.

The polishing table 111 supports the polishing pad 113 under the polishing pad 113. A lower portion of the polishing table 111 is connected to the first drive shaft 115 and the first drive shaft 115 for rotating the polishing pad 113 in a predetermined direction and speed with respect to the wafer 10. The first driving unit 120 for transmitting a driving force to the polishing table 111 is provided.

The polishing head 131 fixes the wafer 10 and presses and rotates the wafer 10 with respect to the polishing pad 113 to polish the wafer 10. In particular, the polishing head 131 fixes the wafer 10 so that the surface of the wafer 10 is parallel to the polishing surface of the polishing pad 113. In addition, the polishing head 131 may be fixed by providing a vacuum to the wafer 10. Here, the polishing head 131 may be provided with a vacuum providing unit (not shown) for providing a vacuum to the wafer (10).

The polishing head 131 is connected to the second driving shaft 135 and the second driving shaft 135 to rotate the polishing head 131 with respect to the polishing pad 113, and the polishing head 131. It includes a second drive unit 140 for transmitting a driving force. In addition, the second driving unit 140 may raise and lower the polishing head 131 on which the wafer 10 is fixed with respect to the polishing pad 113. In addition, the second driving unit 140 may linearly move the polishing head 131 with respect to the polishing pad 113 while the wafer 10 is pressed by the polishing pad 113.

Meanwhile, the wafer 10 may not be directly fixed to the polishing head 131, but after being coupled to the block 133, the block 133 may be fixed to the polishing head 131. That is, the block 133 to which the wafer 10 is coupled is fixed to the polishing head 131 so as to be moved up or down integrally with the polishing head 131.

In addition, the block 133 may have a flat and deformed shape manufactured to correspond to the polishing pad 113, and may have a disk shape made of ceramic material. That is, the block 133 preferably has a flat surface so as not to adversely affect the flatness of the polished surface of the wafer 10. In addition, the block 133 is preferably formed of a material that does not react chemically with the abrasive, so that the wafer 10 can be supported in a state where a predetermined pressure or more is applied to the polishing pad 113. It is desirable to have a certain magnitude of strength. For example, the block 133 may be formed of a ceramic material. Alternatively, the block 133 may be formed of quartz or silicon material.

In the cleaning unit 100 according to the present exemplary embodiment, a polishing process or a cleaning process may be simultaneously performed on the plurality of wafers 10. As shown in FIG. 4, the block 133 may have a disk shape having a size to which a plurality of wafers 10 may be attached, and the wafer 10 may have wax (one surface) on the block 133. 132). For example, five wafers 10 may be bonded to the block 133 by the wax 132. The surface on which the wafer 10 is not attached is coupled to the polishing head 131. Here, since the polishing head 131 is coupled to the block 133 by vacuum, the block 133 preferably has a smooth surface so that the bonding force by the vacuum can be largely applied.

The wafer 10 is coupled to the block 133 through a wax 132. For example, the wax 132 may use a high-purity liquid wax (for example, Nikka's semiconductor liquid wax) capable of adhering the silicon wafer 10. In addition, the wax 132 may have a thickness of 0.5 to 1.5㎛ to maintain the bending or shape of the surface of the wafer 10.

Here, the wax 132 is not limited to beeswax, and may include all adhesives of a material that is solid at room temperature and becomes a low viscosity liquid by heating.

In the meantime, the cleaning unit 100 may be a sheet type in which the polishing process is performed by fixing the wafers 10 one by one to the block 133. However, the cleaning unit 100 may be a batch in which a plurality of wafers 10 are fixed to the block 133 and a polishing process is performed on the plurality of wafers 10 at the same time. In this embodiment, the batch type cleaning unit 100 will be described as an example.

Hereinafter, the operation of the cleaning unit 100 will be described.

First, wax 132 is applied to the back surface of the surface to be polished of the unprocessed wafer 10 to be polished and bonded to the block 133. Here, a plurality of wafers 10 may be attached to the block 133.

In addition, the back surface of the surface on which the wafer 10 is attached in the block 133 is coupled to the polishing head 131. Here, the polishing head 131 provides a vacuum to the block 133 is coupled by the suction force of the vacuum.

Next, the polishing head 131 is lowered to pressurize the wafer 10 to the polishing pad 113, and the polishing head 131 or the polishing pad 113 is rotated to rotate the wafer ( The surface of 10) is polished. In addition, the polishing head 131 may linearly move with respect to the polishing pad 113 so that the wafer 10 may be evenly polished.

A predetermined amount of abrasive is supplied between the wafer 10 and the polishing pad 113 for polishing the wafer 10. Therefore, the surface of the wafer 10 is chemically reacted by the abrasive in a state in which the surfaces of the wafer 10 and the polishing pad 113 are in pressure contact, and at the same time, the physical force due to the rotation of the wafer 10 is increased. In this way, the uneven portion of the surface of the wafer 10 is removed and planarized.

Here, the polishing head 131 and the polishing pad 113 are rotated in opposite directions. Alternatively, the polishing head 131 and the polishing pad 113 may be rotated in the same direction.

When the polishing process of the wafer 10 is completed, a cleaning process for removing the abrasive used in the polishing process of the wafer 10 or the particles peeled from the wafer 10 generated in the polishing process is performed. . For example, the washing process may use deionized water or pure water as the washing liquid.

When the cleaning process of the wafer 10 is completed, the processing wafer 10 is withdrawn from the cleaning unit 100 by a transfer unit 200 provided outside the cleaning unit 100. In addition, the wafer 10 may be drawn out while being coupled to the block 133.

Hereinafter, the transfer unit 200 will be described in detail with reference to FIGS. 5 to 7.

The transfer unit 200 includes a demounter 210 coupled to the block 133 and a transfer roller 220 for moving the demounter 210.

For example, the feed roller 220 may include a plurality of shafts 221 and rollers 223 supporting the lower portion of the demounter 210. In detail, the shaft 221 may be arranged in one direction, for example, the plurality of shafts 221 parallel to each other along the conveying direction of the demounter 210. In addition, a plurality of rollers 223 are mounted on the shafts 221. For example, the rollers 223 are provided at both ends of the shaft 221, respectively, and may be provided to rotate with the shaft 221. In addition, although not shown, a plurality of rollers 223 may be provided on the shaft 221 at predetermined intervals for the stable transport of the demounter 210. In addition, the shaft 221 may be provided with a bearing (not shown) for rotatably supporting the shaft 221. Therefore, the feed roller 220 is in direct contact with the demounter 210 to substantially support the demounter 210, and as the shaft 221 rotates, the demounter 210 in one direction. Can be moved to

Here, the number and arrangement of the shaft 221 and the roller 223 may vary substantially in accordance with the size of the demounter 210 to be transported, thereby limiting the scope of the present invention no.

The demounter 210 may be coupled to a lower portion of the block 133. For example, the demounter 210 may have a ring shape having a size corresponding to that of the block 133. That is, the demounter 210 is coupled along the edge of the bottom surface of the block 133. In particular, the demounter 210 is formed such that its inner circumferential surface can be disposed outside the outer circumferential surface of the wafer 10 bonded to the block 133.

In detail, the demounter 210 may include a frame 211 and a spacer 213 provided on the frame 211.

The frame 211 has a ring shape corresponding to the block 133 and is coupled to a lower portion of the block 133. In addition, the frame 211 is substantially seated on the feed roller 220 through a surface opposite to the surface coupled to the block 133, the block 133 by the rotation of the feed roller 220 Is transferred in one direction.

The spacer 213 is provided on the frame 211 to space the block 133 from the frame 211 at a predetermined interval. For example, the plurality of spacers 213 may be disposed at equal intervals along the inner circumferential surface of the block 133.

Here, since the demounter 210 has a ring shape, bubbles or cleaning liquid remaining in the processing wafer 10 may be provided on the bottom surface or the transfer unit 200 through the opening of the demounter 210. It may be discharged through a drain (not shown).

According to the present invention, first, the cleaning liquid introduced with the wafer is prevented from being buried in the demounter during the transfer of the cleaned wafer, and the contamination of the cleaned wafer from the demounter is prevented.

In addition, since the wafer is not cleaned again due to contamination of the wafer in the transfer step, it is possible to improve cleaning efficiency and reduce waste of time, resources, and costs due to recleaning.

In addition, due to the contamination of the wafer, the cleaning is completed, it is possible to prevent the occurrence of defects in the subsequent process to improve the production efficiency.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (8)

A block formed to support one surface of the wafer and to which the plurality of wafers are coupled; A cleaning unit in which the cleaning process of the wafer is performed; A transfer unit having a ring shape in which a portion corresponding to the block is opened and coupled along the block circumference, and having a demounter coupled to the block to transfer the wafer; Wafer processing apparatus comprising a. delete delete delete The method of claim 1, And the demounter includes a spacer spaced apart from the block and the demounter. The method of claim 1, And a transfer rail on which the demounter is mounted to move the demounter. The method of claim 1, The transfer unit further comprises a transfer robot for entering and exiting the block from the cleaning unit. delete
KR1020070058586A 2007-06-14 2007-06-14 Apparatus for treating wafer KR100873236B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070058586A KR100873236B1 (en) 2007-06-14 2007-06-14 Apparatus for treating wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070058586A KR100873236B1 (en) 2007-06-14 2007-06-14 Apparatus for treating wafer

Publications (1)

Publication Number Publication Date
KR100873236B1 true KR100873236B1 (en) 2008-12-10

Family

ID=40372373

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070058586A KR100873236B1 (en) 2007-06-14 2007-06-14 Apparatus for treating wafer

Country Status (1)

Country Link
KR (1) KR100873236B1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000263433A (en) * 1999-03-15 2000-09-26 Mitsubishi Materials Corp Wafer conveyer, wafer polisher and manufacture of wafer
KR20030038851A (en) * 2001-11-06 2003-05-17 주식회사 실트론 Wafer mounting, demounting equipment for semiconductor polishing
KR20050035247A (en) * 2002-07-22 2005-04-15 브룩스 오토메이션 인코퍼레이티드 Substrate processing apparatus
KR20050053897A (en) * 2003-12-03 2005-06-10 삼성전자주식회사 Wafer transporter and polishing apparatus comprising the same
KR20060046703A (en) * 2004-04-27 2006-05-17 가부시키가이샤 퓨쳐비전 Treatment solution supply apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000263433A (en) * 1999-03-15 2000-09-26 Mitsubishi Materials Corp Wafer conveyer, wafer polisher and manufacture of wafer
KR20030038851A (en) * 2001-11-06 2003-05-17 주식회사 실트론 Wafer mounting, demounting equipment for semiconductor polishing
KR20050035247A (en) * 2002-07-22 2005-04-15 브룩스 오토메이션 인코퍼레이티드 Substrate processing apparatus
KR20050053897A (en) * 2003-12-03 2005-06-10 삼성전자주식회사 Wafer transporter and polishing apparatus comprising the same
KR20060046703A (en) * 2004-04-27 2006-05-17 가부시키가이샤 퓨쳐비전 Treatment solution supply apparatus

Similar Documents

Publication Publication Date Title
US6910240B1 (en) Wafer bevel edge cleaning system and apparatus
KR20140099191A (en) Method of polishing back surface of substrate and substrate processing apparatus
TWI774776B (en) Method and apparatus for polishing a substrate, and method for processing a substrate
TW201935520A (en) Apparatus and method for processing a surface of a substrate
TW201812928A (en) Apparatus and method for polishing a surface of a substrate
EP3272459B1 (en) Apparatus and method for polishing a surface of a substrate
JP3560051B2 (en) Substrate polishing method and apparatus
CN110610848A (en) Substrate processing method
JP4660494B2 (en) Polishing cartridge
KR20090098711A (en) Substrate cleaning apparatus, substrate cleaning method, and storage medium
JP2001070896A (en) Substrate washing device
TWI765125B (en) Substrate processing apparatus, substrate processing method, and storage medium storing program
JP2006319249A (en) Polisher, semiconductor device manufacturing method using the same and semiconductor device manufactured by the same manufacturing method
CN110858558A (en) Substrate processing apparatus, substrate processing method, and storage medium storing program for causing computer to execute method for controlling substrate processing apparatus
KR100522888B1 (en) An apparatus for polishing and a method therefor
JP2002016025A (en) Method and apparatus for manufacturing semiconductor wafer
JP2006303329A (en) Thin plate working method of silicon substrate and working apparatus used for it
KR100873236B1 (en) Apparatus for treating wafer
KR100578133B1 (en) Chemical mechanical polishing apparatus and polishing pad used in the apparatus
JP4963411B2 (en) Manufacturing method of semiconductor device or semiconductor wafer
KR100634450B1 (en) Chemical mechanical polishing apparatus and platen used in the apparatus
KR102643715B1 (en) Sbustrate cleaning apparatus and cleaning method using the same
KR102628175B1 (en) Substrate processing apparatus and substrate processing method
JPH0547906A (en) Plane object holding means and equipment using the same
KR20070077979A (en) Chemical mechanical polishing apparatus and method for polishing wafer using the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121011

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20130926

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20140926

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20150924

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20160928

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20170927

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20181004

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20190924

Year of fee payment: 12