KR100857466B1 - 안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법 - Google Patents
안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법 Download PDFInfo
- Publication number
- KR100857466B1 KR100857466B1 KR1020070047526A KR20070047526A KR100857466B1 KR 100857466 B1 KR100857466 B1 KR 100857466B1 KR 1020070047526 A KR1020070047526 A KR 1020070047526A KR 20070047526 A KR20070047526 A KR 20070047526A KR 100857466 B1 KR100857466 B1 KR 100857466B1
- Authority
- KR
- South Korea
- Prior art keywords
- phase change
- memory device
- change material
- electrode layer
- material layer
- Prior art date
Links
- 230000008859 change Effects 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 45
- 229910001297 Zn alloy Inorganic materials 0.000 title claims description 18
- 239000012782 phase change material Substances 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract 2
- 239000011701 zinc Substances 0.000 claims description 33
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 25
- 239000011148 porous material Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 16
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 11
- 230000002441 reversible effect Effects 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 5
- 230000015654 memory Effects 0.000 abstract description 26
- 239000000203 mixture Substances 0.000 abstract description 23
- 239000000956 alloy Substances 0.000 abstract description 11
- 229910045601 alloy Inorganic materials 0.000 abstract description 7
- 229910017910 Sb—Zn Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 description 28
- 238000002425 crystallisation Methods 0.000 description 27
- 230000008025 crystallization Effects 0.000 description 27
- 230000008569 process Effects 0.000 description 22
- 229910052787 antimony Inorganic materials 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 12
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 229910052725 zinc Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 150000004770 chalcogenides Chemical class 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- CZJCMXPZSYNVLP-UHFFFAOYSA-N antimony zinc Chemical compound [Zn].[Sb] CZJCMXPZSYNVLP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 238000005191 phase separation Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000048 melt cooling Methods 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- 기판; 및기판 상부에 형성된 상변화재료층을 포함하는 메모리소자의 스택을 포함하고,상기 상변화재료층은 하기 화학식으로 표현되는 안티몬과 아연 합금을 포함하는 것을 특징으로 하는 상변화형 비휘발성 메모리소자:화학식 1ZnxSb100-xx는 5 내지 35의 범위임.
- 삭제
- 제 1항에 있어서,상기 상변화재료층은 상온에서 비정질상태이며, 결정질로의 가역적 상전이 온도는 180 내지 220℃이고, 결정질로부터 비정질로의 가역적 상전이 온도는 500 내지 540℃인 것을 특징으로 하는 상변화형 비휘발성 메모리소자.
- 제 1항에 있어서,상기 상변화재료층의 리셋(reset) 동작에 요구되는 전류의 크기는 12mA 미만인 것을 특징으로 하는 상변화형 비휘발성 메모리소자.
- 제 1항에 있어서,상기 상변화재료층은 2.0 내지 4.0 V의 인가전압 범위에서 200 내지 100 ns의 동작속도를 나타내는 것을 특징으로 하는 상변화형 비휘발성 메모리소자.
- 제 1항에 있어서,상기 메모리소자의 스택은하부전극층;상기 하부전극층 상에 형성된 발열성 전극층;상기 발열성 전극층 상에 형성되어 상기 발열성 전극층의 일부를 노출시키는 포어가 형성된 제1절연층;상기 제1절연층 상에 포어를 매립하여 형성된 상변화재료층; 및상기 상변화재료층 상에 형성된 상부전극층을 포함하는상변화형 비휘발성 메모리소자.
- 제 6항에 있어서,상기 메모리소자의 스택은 상기 상변화재료층과 상부전극층 사이에 제2절연층을 더 포함하는 것을 특징으로 하는 상변화형 비휘발성 메모리소자.
- 기판 상에 하부전극층을 형성하는 단계;상기 하부전극층 상에 발열성 전극층을 형성하는 단계;상기 발열성 전극층의 일부를 덮도록 제1절연층을 형성하는 단계;상기 제1절연층을 패터닝하여 발열성 전극층의 일부가 노출되는 포어를 형성하는 단계;상기 포어에 하기 화학식으로 표현되는 안티몬과 아연 합금으로 상변화재료층을 형성하는 단계; 및상기 상변화재료층 상에 상부전극을 형성하는 단계를 포함하는 상변화형 비휘발성 메모리소자의 제조방법:화학식 1ZnxSb100-xx는 5 내지 35의 범위임.
- 삭제
- 제 8항에 있어서,상기 상변화재료층의 형성 단계 후에, 상변화재료층에 제2절연층을 형성하는 단계를 더 포함하는 것을 특징으로 하는 상변화형 비휘발성 메모리소자의 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070047526A KR100857466B1 (ko) | 2007-05-16 | 2007-05-16 | 안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법 |
JP2008126164A JP2008288587A (ja) | 2007-05-16 | 2008-05-13 | アンチモン−亜鉛合金を利用した相変化形不揮発性メモリ素子及びその製造方法 |
US12/122,152 US7952086B2 (en) | 2007-05-16 | 2008-05-16 | Phase-change nonvolatile memory device using Sb-Zn alloy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070047526A KR100857466B1 (ko) | 2007-05-16 | 2007-05-16 | 안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100857466B1 true KR100857466B1 (ko) | 2008-09-08 |
Family
ID=40022750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070047526A KR100857466B1 (ko) | 2007-05-16 | 2007-05-16 | 안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7952086B2 (ko) |
JP (1) | JP2008288587A (ko) |
KR (1) | KR100857466B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7785978B2 (en) * | 2009-02-04 | 2010-08-31 | Micron Technology, Inc. | Method of forming memory cell using gas cluster ion beams |
CN106206943B (zh) * | 2014-03-28 | 2019-01-25 | 江苏理工学院 | 氮掺杂改性的相变薄膜材料及其制备方法 |
JP6697366B2 (ja) | 2016-10-20 | 2020-05-20 | キオクシア株式会社 | 超格子メモリ及びクロスポイント型メモリ装置 |
CN110233203B (zh) * | 2018-03-06 | 2023-04-07 | 江苏理工学院 | 一种用于高温工况的类超晶格Zn-Sb/Ge-Sb纳米相变存储薄膜及其制备方法 |
US10586922B1 (en) | 2018-08-21 | 2020-03-10 | International Business Machines Corporation | Symmetric tunable PCM resistor for artificial intelligence circuits |
US11211556B1 (en) * | 2020-07-20 | 2021-12-28 | International Business Machines Corporation | Resistive element for PCM RPU by trench depth patterning |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6740921B2 (en) * | 2002-02-01 | 2004-05-25 | Hitachi, Ltd. | Semiconductor memory cell and method of forming same |
KR20040087153A (ko) * | 2003-04-04 | 2004-10-13 | 삼성전자주식회사 | 저전류 고속 상변화 메모리 및 그 구동 방식 |
KR20060051652A (ko) * | 2004-10-21 | 2006-05-19 | 가부시키가이샤 히타치세이사쿠쇼 | 상변화 메모리 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5534712A (en) * | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
US5687112A (en) * | 1996-04-19 | 1997-11-11 | Energy Conversion Devices, Inc. | Multibit single cell memory element having tapered contact |
US6458319B1 (en) * | 1997-03-18 | 2002-10-01 | California Institute Of Technology | High performance P-type thermoelectric materials and methods of preparation |
JP2000185467A (ja) | 1998-12-22 | 2000-07-04 | Victor Co Of Japan Ltd | 光情報記録媒体 |
JP2000185466A (ja) | 1998-12-22 | 2000-07-04 | Victor Co Of Japan Ltd | 光情報記録媒体 |
JP2000190634A (ja) | 1998-12-25 | 2000-07-11 | Victor Co Of Japan Ltd | 光情報記録媒体 |
KR100448893B1 (ko) * | 2002-08-23 | 2004-09-16 | 삼성전자주식회사 | 상전이 기억 소자 구조 및 그 제조 방법 |
JP2006511971A (ja) * | 2002-12-19 | 2006-04-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 相変化材料を備える電子デバイス |
JP2004289947A (ja) | 2003-03-24 | 2004-10-14 | Yaskawa Electric Corp | 電力変換装置 |
JP4254293B2 (ja) * | 2003-03-25 | 2009-04-15 | 株式会社日立製作所 | 記憶装置 |
CN101164176A (zh) * | 2005-01-25 | 2008-04-16 | Nxp股份有限公司 | 使用后端工艺的相变电阻器的制造 |
KR100687750B1 (ko) * | 2005-09-07 | 2007-02-27 | 한국전자통신연구원 | 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법 |
-
2007
- 2007-05-16 KR KR1020070047526A patent/KR100857466B1/ko active IP Right Grant
-
2008
- 2008-05-13 JP JP2008126164A patent/JP2008288587A/ja active Pending
- 2008-05-16 US US12/122,152 patent/US7952086B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6740921B2 (en) * | 2002-02-01 | 2004-05-25 | Hitachi, Ltd. | Semiconductor memory cell and method of forming same |
KR20040087153A (ko) * | 2003-04-04 | 2004-10-13 | 삼성전자주식회사 | 저전류 고속 상변화 메모리 및 그 구동 방식 |
KR20060051652A (ko) * | 2004-10-21 | 2006-05-19 | 가부시키가이샤 히타치세이사쿠쇼 | 상변화 메모리 |
Also Published As
Publication number | Publication date |
---|---|
US7952086B2 (en) | 2011-05-31 |
JP2008288587A (ja) | 2008-11-27 |
US20080283817A1 (en) | 2008-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100687750B1 (ko) | 안티몬과 셀레늄 금속합금을 이용한 상변화형 메모리소자및 그 제조방법 | |
US7569844B2 (en) | Memory cell sidewall contacting side electrode | |
US7682868B2 (en) | Method for making a keyhole opening during the manufacture of a memory cell | |
US7875493B2 (en) | Memory structure with reduced-size memory element between memory material portions | |
EP2204851B1 (en) | Ovonic threshold switch film composition for TSLAGS material | |
US7879645B2 (en) | Fill-in etching free pore device | |
KR100763916B1 (ko) | GeSbTe 박막의 제조방법 및 이를 이용한 상변화메모리 소자의 제조방법 | |
US7973301B2 (en) | Low power phase change memory cell with large read signal | |
KR100873878B1 (ko) | 상변화 메모리 유닛의 제조 방법 및 이를 이용한 상변화메모리 장치의 제조 방법 | |
US7977674B2 (en) | Phase change memory device and method of fabricating the same | |
US7919766B2 (en) | Method for making self aligning pillar memory cell device | |
KR100990215B1 (ko) | 상변화 메모리 소자 및 그 제조 방법 | |
US7879643B2 (en) | Memory cell with memory element contacting an inverted T-shaped bottom electrode | |
US7956344B2 (en) | Memory cell with memory element contacting ring-shaped upper end of bottom electrode | |
KR100857466B1 (ko) | 안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법 | |
US7884342B2 (en) | Phase change memory bridge cell | |
KR20090009652A (ko) | 탄소함유 상변화 물질과 이를 포함하는 메모리 소자 및 그동작 방법 | |
KR100946700B1 (ko) | 상변화 메모리 소자 및 그 제조 방법 | |
US20090101885A1 (en) | Method of producing phase change memory device | |
US7985693B2 (en) | Method of producing phase change memory device | |
US20090159868A1 (en) | Phase change material layer and phase change memory device including the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120831 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20130829 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20140827 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20150827 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160826 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20170828 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20190826 Year of fee payment: 12 |