KR100854910B1 - 반도체 소자의 금속 배선 형성방법 - Google Patents
반도체 소자의 금속 배선 형성방법 Download PDFInfo
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- KR100854910B1 KR100854910B1 KR1020060136120A KR20060136120A KR100854910B1 KR 100854910 B1 KR100854910 B1 KR 100854910B1 KR 1020060136120 A KR1020060136120 A KR 1020060136120A KR 20060136120 A KR20060136120 A KR 20060136120A KR 100854910 B1 KR100854910 B1 KR 100854910B1
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 158
- 239000002184 metal Substances 0.000 title claims abstract description 158
- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 230000009977 dual effect Effects 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 3
- 239000010949 copper Substances 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 238000013508 migration Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000036962 time dependent Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76844—Bottomless liners
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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Abstract
Description
듀얼 다마신 패턴을 도전 물질로 채워 금속 배선을 형성한다.
Claims (21)
- 반도체 기판 상부에 형성된 절연막을 식각하여 듀얼 다마신 패턴을 형성하는 단계;상기 듀얼 다마신 패턴 내부에 베리어 메탈막을 형성하는 단계;상기 베리어 메탈막의 표면에 금속막을 형성하는 단계;상기 듀얼 다마신 패턴의 하부로 상기 금속막을 리플로우시키는 단계; 및상기 듀얼 다마신 패턴을 도전 물질로 채워 금속 배선을 형성하는 단계를 포함하는 반도체 소자의 금속 배선 형성방법.
- 제1항에 있어서,상기 절연막은 저유전 물질로 형성하는 반도체 소자의 금속 배선 형성방법.
- 제1항에 있어서,상기 베리어 메탈막은 티타늄(Ti)을 스퍼터링(sputtering) 방법으로 증착하여 형성하는 반도체 소자의 금속 배선 형성방법.
- 제1항에 있어서,상기 금속막은 화학기상 증착 방법(CVD)을 이용하여 알루미늄(Al)으로 형성하는 반도체 소자의 금속 배선 형성방법.
- 제1항에 있어서,상기 금속막은 250Å 내지 400Å 두께로 형성하는 반도체 소자의 금속 배선 형성방법.
- 제1항에 있어서,상기 듀얼 다마신 패턴은 트랜치 및 상기 트랜치 하부에 형성된 비아홀을 포함하고,상기 베리어 메탈막의 표면에 금속막을 형성하는 단계에서 상기 금속막은 상기 비아홀보다 상기 트랜치에 더 많이 형성되는 반도체 소자의 금속 배선 형성방법.
- 제1항에 있어서,상기 금속막을 리플로우시키는 단계는 열처리를 실시함으로써 이루어지는 반도체 소자의 금속 배선 형성방법.
- 제7항에 있어서,상기 열처리 공정은 430℃ 내지 450℃ 온도로 실시하는 반도체 소자의 금속 배선 형성방법.
- 반도체 기판 상부에 형성된 제1 절연막을 식각하여 제1 트렌치를 형성하는 단계;상기 제1 트렌치를 제1 금속막으로 채워 제1 금속 배선을 형성하는 단계;상기 제1 금속 배선을 포함한 상기 반도체 기판 상부에 제1 식각 정지막, 제2 절연막, 제2 식각 정지막 및 제3 절연막을 형성하는 단계;상기 제3 절연막, 제2 식각 정지막, 제2 절연막 및 제1 식각 정지막을 식각하여 듀얼 다마신 구조의 제2 트렌치와 비아홀을 형성하는 단계;상기 제2 트렌치 및 상기 비아홀에 제2 금속막을 형성하는 단계;열처리 공정을 실시하여 상기 제2 금속막을 상기 제2 트렌치 및 비아홀 하부 영역과 측면에 리플로우시키는 단계; 및상기 제2 트렌치 및 비아홀을 제3 금속막으로 채워 제2 금속 배선을 형성하는 단계를 포함하는 반도체 소자의 금속 배선 형성방법.
- 제9항에 있어서,상기 제1, 제2 및 제3 절연막은 저유전 물질로 형성하는 반도체 소자의 금속 배선 형성방법.
- 제9항에 있어서,상기 제1 금속막을 형성하기 전에,상기 제1 트렌치 내에 팔라듐(Palladium; Pd)을 형성하는 단계; 및상기 제1 트렌치 내에 베리어 메탈막을 형성하는 단계를 더 포함하는 반도체 소자의 금속 배선 형성방법.
- 제11항에 있어서,상기 팔라듐은 스퍼터링(sputtering) 방법으로 증착하여 형성하는 반도체 소자의 금속 배선 형성방법.
- 제11항에 있어서,상기 베리어 메탈막은 탄탈륨(Ta) 및 탄탈륨질화막(TaN)을 스퍼터링 방법으 로 증착하여 형성하는 반도체 소자의 금속 배선 형성방법.
- 제9항에 있어서,상기 제2 금속막을 형성하기 전에,상기 제2 트렌치 및 비아홀 내에 베리어 메탈막을 형성하는 단계를 더 포함하는 반도체 소자의 금속 배선 형성방법.
- 제14항에 있어서,상기 베리어 메탈막은 티타늄(Ti)을 스퍼터링 방법으로 증착하여 형성하는 반도체 소자의 금속 배선 형성방법.
- 제9항에 있어서,상기 제2 금속막은 화학기상 증착 방법(CVD)을 이용하여 알루미늄(Al)으로 형성하는 반도체 소자의 금속 배선 형성방법.
- 제9항에 있어서,상기 제2 금속막은 250Å 내지 400Å 두께로 형성하는 반도체 소자의 금속 배선 형성방법.
- 제14항에 있어서,상기 열처리 공정을 실시하기 전에,식각 공정을 실시하여 상기 비아홀 하부의 상기 제1 금속 배선 상에 형성된 상기 베리어 메탈막을 제거하는 단계를 더 포함하는 반도체 소자의 금속 배선 형성방법.
- 제18항에 있어서,상기 식각 공정시 상기 제2 트렌치와 베리어 메탈막 상부에 형성된 상기 제2 금속막의 일부가 제거되는 반도체 소자의 금속 배선 형성방법.
- 제9항에 있어서,상기 열처리 공정은 430℃ 내지 450℃ 온도로 실시하는 반도체 소자의 금속 배선 형성방법.
- 제9항에 있어서,상기 제3 금속막은 전기 도금(electroplating) 방법을 이용하여 구리(Cu)로 형성할 수 있으며, 이 경우 상기 제2 금속막을 시드층으로 이용하여 상기 제2 트렌치와 비아홀을 구리(Cu)로 채우는 반도체 소자의 금속 배선 형성방법.
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KR1020060136120A KR100854910B1 (ko) | 2006-12-28 | 2006-12-28 | 반도체 소자의 금속 배선 형성방법 |
US11/801,498 US7682967B2 (en) | 2006-12-28 | 2007-05-10 | Method of forming metal wire in semiconductor device |
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KR101016505B1 (ko) | 2008-09-11 | 2011-02-24 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
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JP2012129465A (ja) * | 2010-12-17 | 2012-07-05 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US10600961B2 (en) * | 2017-07-27 | 2020-03-24 | Hrl Laboratories, Llc | Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance |
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KR20010004743A (ko) * | 1999-06-29 | 2001-01-15 | 김영환 | 반도체 소자의 금속 배선 형성 방법 |
KR20010112891A (ko) * | 2000-06-15 | 2001-12-22 | 박종섭 | 반도체 소자의 구리 금속배선 형성 방법 |
KR20020053610A (ko) * | 2000-12-27 | 2002-07-05 | 박종섭 | 반도체장치의 배선 및 배선연결부 제조방법 |
KR20040008017A (ko) * | 2002-07-15 | 2004-01-28 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 배선 형성방법 |
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US7244677B2 (en) * | 1998-02-04 | 2007-07-17 | Semitool. Inc. | Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
US7388289B1 (en) * | 1999-09-02 | 2008-06-17 | Micron Technology, Inc. | Local multilayered metallization |
-
2006
- 2006-12-28 KR KR1020060136120A patent/KR100854910B1/ko active IP Right Grant
-
2007
- 2007-05-10 US US11/801,498 patent/US7682967B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010004743A (ko) * | 1999-06-29 | 2001-01-15 | 김영환 | 반도체 소자의 금속 배선 형성 방법 |
KR20010112891A (ko) * | 2000-06-15 | 2001-12-22 | 박종섭 | 반도체 소자의 구리 금속배선 형성 방법 |
KR20020053610A (ko) * | 2000-12-27 | 2002-07-05 | 박종섭 | 반도체장치의 배선 및 배선연결부 제조방법 |
KR20040008017A (ko) * | 2002-07-15 | 2004-01-28 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 배선 형성방법 |
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---|---|---|---|---|
KR101016505B1 (ko) | 2008-09-11 | 2011-02-24 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
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