KR100815907B1 - 액정표시소자의 제조방법 - Google Patents
액정표시소자의 제조방법 Download PDFInfo
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- KR100815907B1 KR100815907B1 KR1020010088631A KR20010088631A KR100815907B1 KR 100815907 B1 KR100815907 B1 KR 100815907B1 KR 1020010088631 A KR1020010088631 A KR 1020010088631A KR 20010088631 A KR20010088631 A KR 20010088631A KR 100815907 B1 KR100815907 B1 KR 100815907B1
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- Prior art keywords
- mask
- pattern
- photoresist
- substrate
- liquid crystal
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (6)
- 어레이부와 어레이 외곽부로 구분되어 상기 어레이부에 수직 교차하는 게이트 배선 및 데이터 배선과, 상기 두 배선 사이에 박막트랜지스터가 구비된 액정표시소자의 제조방법에 있어서,내부에 패턴이 구비되어 있는 기판 상에 필름 및 포토레지스트를 차례로 형성하는 단계;마스크의 얼라인 키와 상기 기판 내부의 패턴과 비교하여 상기 마스크를 정렬하는 단계;상기 마스크를 통해 하부의 포토레지스트를 노광하는 단계;상기 포토레지스트를 패터닝하는 단계;상기 패터닝된 포토레지스트를 마스크로 하여 상기 필름을 식각하는 단계를 포함하며, 상기 기판 내부의 패턴은 상기 게이트 배선 끝단부 또는 데이터 배선 끝단부에 형성된 더미 패턴인 것을 특징으로 하는 액정표시소자의 제조방법.
- 삭제
- 제 1 항에 있어서, 상기 더미 패턴은 상기 게이트 배선 또는 데이터 배선과 동시에 형성하는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 1 항에 있어서, 상기 더미 패턴 사이에 얼라인 키를 더 형성하는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 4 항에 있어서, 상기 얼라인 키는 상기 게이트 배선과 동시에 형성하는 것을 특징으로 하는 액정표시소자의 제조방법.
- 어레이부와 어레이 외곽부로 구분되어 상기 어레이부에 수직 교차하는 게이트 배선 및 데이터 배선과, 상기 두 배선 사이에 박막트랜지스터가 구비된 액정표시소자의 제조방법에 있어서,내부에 패턴이 구비되어 있는 기판 상에 필름 및 포토레지스트를 차례로 형성하는 단계;마스크의 얼라인 키와 상기 기판 내부의 패턴과 비교하여 상기 마스크를 정렬하는 단계;상기 마스크를 통해 하부의 포토레지스트를 노광하는 단계;상기 포토레지스트를 패터닝하는 단계;상기 패터닝된 포토레지스트를 마스크로 하여 상기 필름을 식각하는 단계를 포함하며,상기 마스크의 얼라인 키는 상기 게이트 배선과 데이터 배선의 교차 지점의 중심과, 상기 교차하는 에지 부분에 얼라인되도록 형성되는 것을 특징으로 하는 액정표시소자의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020010088631A KR100815907B1 (ko) | 2001-12-29 | 2001-12-29 | 액정표시소자의 제조방법 |
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KR1020010088631A KR100815907B1 (ko) | 2001-12-29 | 2001-12-29 | 액정표시소자의 제조방법 |
Publications (2)
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KR20030058235A KR20030058235A (ko) | 2003-07-07 |
KR100815907B1 true KR100815907B1 (ko) | 2008-03-21 |
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KR1020010088631A KR100815907B1 (ko) | 2001-12-29 | 2001-12-29 | 액정표시소자의 제조방법 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101055198B1 (ko) * | 2004-06-30 | 2011-08-08 | 엘지디스플레이 주식회사 | 게이트 마스크 및 이를 이용한 조개 얼룩 감지 방법 |
KR101107677B1 (ko) * | 2004-12-02 | 2012-01-25 | 엘지디스플레이 주식회사 | 액정표시소자의 제조방법 |
KR101308751B1 (ko) * | 2006-12-29 | 2013-09-12 | 엘지디스플레이 주식회사 | 액정표시소자의 오버레이키 및 이를 형성하는 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08146400A (ja) * | 1994-11-16 | 1996-06-07 | Seiko Epson Corp | 液晶表示装置及び液晶表示装置の製造方法 |
JPH09197434A (ja) * | 1996-01-16 | 1997-07-31 | Toshiba Corp | 表示装置の製造方法 |
JPH1069066A (ja) * | 1996-08-29 | 1998-03-10 | Nec Corp | マスクおよびその検査方法ならびに露光方法 |
JPH11233411A (ja) * | 1998-02-13 | 1999-08-27 | Nec Corp | 半導体装置の製造方法 |
JP2000356858A (ja) * | 1999-06-15 | 2000-12-26 | Display Technologies Inc | 表示装置用アレイ基板及びその製造方法 |
-
2001
- 2001-12-29 KR KR1020010088631A patent/KR100815907B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08146400A (ja) * | 1994-11-16 | 1996-06-07 | Seiko Epson Corp | 液晶表示装置及び液晶表示装置の製造方法 |
JPH09197434A (ja) * | 1996-01-16 | 1997-07-31 | Toshiba Corp | 表示装置の製造方法 |
JPH1069066A (ja) * | 1996-08-29 | 1998-03-10 | Nec Corp | マスクおよびその検査方法ならびに露光方法 |
JPH11233411A (ja) * | 1998-02-13 | 1999-08-27 | Nec Corp | 半導体装置の製造方法 |
JP2000356858A (ja) * | 1999-06-15 | 2000-12-26 | Display Technologies Inc | 表示装置用アレイ基板及びその製造方法 |
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