KR100787081B1 - 광센서모듈 - Google Patents
광센서모듈 Download PDFInfo
- Publication number
- KR100787081B1 KR100787081B1 KR1020060073855A KR20060073855A KR100787081B1 KR 100787081 B1 KR100787081 B1 KR 100787081B1 KR 1020060073855 A KR1020060073855 A KR 1020060073855A KR 20060073855 A KR20060073855 A KR 20060073855A KR 100787081 B1 KR100787081 B1 KR 100787081B1
- Authority
- KR
- South Korea
- Prior art keywords
- transistor
- light
- photodiode
- output
- sensor module
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract description 25
- 239000003990 capacitor Substances 0.000 claims description 17
- 230000002265 prevention Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 4
- 230000001934 delay Effects 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 3
- 230000010354 integration Effects 0.000 abstract 2
- 230000003321 amplification Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 208000032368 Device malfunction Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000009131 signaling function Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Communication System (AREA)
Abstract
Description
Claims (3)
- 발광신호, 태양광 및 주변광을 수신하여 전류로 변환시켜 출력하는 포토다이오드;상기 포토다이오드의 출력을 증폭하여 출력하는 제 1트랜지스터; 및상기 포토다이오드의 출력에 응답하여 동작하는 상기 제 1트랜지스터의 출력을 피드백하여 상기 제 1트랜지스터의 포화를 방지하는 포화 방지회로를 포함하는 것을 특징으로 하는 광센서 모듈.
- 제 1항에 있어서, 상기 포화 방지회로는인덕터;컬렉터는 상기 포토다이오드의 에노드에 접속되고 에미터는 상기 인덕터에 접속되며, 베이스는 상기 제 1트랜지스터의 에미터에 접속되어 상기 제 1트랜지스터의 에미터 전압에 응답하여 턴온/턴오프되는 제 2트랜지스터; 및상기 제 2트랜지스터를 소정시간 지연시키는 적분회로를 포함하는 것을 특징으로 하는 광센서 모듈.
- 제 2항에 있어서, 상기 적분회로는제 1노드;제 1트랜지스터의 에미터 및 상기 제 1노드 사이에 접속된 1저항;상기 제 1노드와 상기 제 2트랜지스터의 베이스 사이에 접속된 제 2저항;제 1노드와 접지사이에 접속된 캐패시터를 포함하는 것을 특징으로 하는 광센서 모듈.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060073855A KR100787081B1 (ko) | 2006-08-04 | 2006-08-04 | 광센서모듈 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060073855A KR100787081B1 (ko) | 2006-08-04 | 2006-08-04 | 광센서모듈 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100787081B1 true KR100787081B1 (ko) | 2007-12-21 |
Family
ID=39147442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060073855A KR100787081B1 (ko) | 2006-08-04 | 2006-08-04 | 광센서모듈 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100787081B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105785458A (zh) * | 2016-05-20 | 2016-07-20 | 吉林大学 | 地面磁共振信号放大电路的抗饱和装置及抗饱和方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010012212A (ko) * | 1998-03-17 | 2001-02-15 | 클라우스 포스, 게오르그 뮐러 | 광센서 |
-
2006
- 2006-08-04 KR KR1020060073855A patent/KR100787081B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010012212A (ko) * | 1998-03-17 | 2001-02-15 | 클라우스 포스, 게오르그 뮐러 | 광센서 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105785458A (zh) * | 2016-05-20 | 2016-07-20 | 吉林大学 | 地面磁共振信号放大电路的抗饱和装置及抗饱和方法 |
CN105785458B (zh) * | 2016-05-20 | 2017-03-15 | 吉林大学 | 地面磁共振信号放大电路的抗饱和装置及抗饱和方法 |
US10345474B2 (en) | 2016-05-20 | 2019-07-09 | Jilin University | Anti-saturation device and method for ground magnetic resonance signal amplifying circuit |
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