KR100750267B1 - 포지티브 포토레지스트 조성물 - Google Patents
포지티브 포토레지스트 조성물 Download PDFInfo
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- KR100750267B1 KR100750267B1 KR1020010017571A KR20010017571A KR100750267B1 KR 100750267 B1 KR100750267 B1 KR 100750267B1 KR 1020010017571 A KR1020010017571 A KR 1020010017571A KR 20010017571 A KR20010017571 A KR 20010017571A KR 100750267 B1 KR100750267 B1 KR 100750267B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
X, R13, R15에서, 아릴렌기로는 탄소수 6~10개인 것이 있는데, 이것은 치환기를 보유하여도 좋다. 구체적으로는, 페닐렌기, 톨일렌기 및 나프틸렌기가 있다.
Claims (8)
- 제1항에 있어서, 상기 (B)수지는 하기 일반식(pI), (pⅡ)로 표시되는 지환식 탄화수소구조를 포함하는 기 중에서, 1종 이상의 기로 보호된 알칼리 가용성기를 보유하는 반복단위를 더 함유하는 것을 특징으로 하는 포지티브 포토레지스트 조성물.(일반식(pI), (pⅡ)중;R11는 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기, 또는 sec-부틸기를 나타내며, Z는 탄소원자와 함께 지환식 탄화수소기를 형성하는데 필요한 원자단을 나타낸다.R12~R14는 각각 독립적으로, 탄소수 1~4개의 직쇄 또는 분기의 알킬기 또는 지환식 탄화수소기를 표시하는데, 단 R12~R14 중 1개 이상은 지환식 탄화수소기를 표시한다.)
- 제2항에 있어서, 상기 일반식(pI), (pⅡ)으로 표시되는 지환식 탄화수소구조를 포함하는 기는 하기 일반식(II)으로 표시되는 기인 것을 특징으로 하는 포지티브 포토레지스트 조성물.(일반식(II)중, R28은 메틸기, 에틸기, n-프로필기, 이소프로필기, n-부틸기, 이소부틸기, 또는 sec-부틸기를 나타낸다. R29~R31은 같거나 달라도 좋으며, 히드록시기, 할로겐원자, 카르복실기 또는 치환기를 보유하고 있어도 좋은, 알킬기, 시클로알킬기, 알케닐기, 알콕시기, 알콕시카르보닐기 또는 아실기를 나타낸다. p, q, r은 각각 독립적으로 0을 나타낸다.)
- 제1항 내지 제3항 중 어느 한 항에 있어서, (C)산확산억제제를 더 함유하는 것을 특징으로 하는 포지티브 포토레지스트 조성물.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 (A)화합물은 술포늄 또는 요오드늄의 술폰산염 화합물인 것을 특징으로 하는 포지티브 포토레지스트 조성물.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 (A)화합물은 N-히드록시이미드의 술포네이트화합물 또는 디술포닐디아조메탄화합물인 것을 특징으로 하는 포지티브 포토레지스트 조성물.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 노광광으로 파장 150nm~220nm의 원자외선을 사용하는 것을 특징으로 하는 포지티브 포토레지스트 조성물.
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KR1020010017571A KR100750267B1 (ko) | 2001-04-03 | 2001-04-03 | 포지티브 포토레지스트 조성물 |
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KR1020010017571A KR100750267B1 (ko) | 2001-04-03 | 2001-04-03 | 포지티브 포토레지스트 조성물 |
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KR20020077944A KR20020077944A (ko) | 2002-10-18 |
KR100750267B1 true KR100750267B1 (ko) | 2007-08-17 |
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KR1020010017571A KR100750267B1 (ko) | 2001-04-03 | 2001-04-03 | 포지티브 포토레지스트 조성물 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4255100B2 (ja) * | 2001-04-06 | 2009-04-15 | 富士フイルム株式会社 | ArFエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02141636A (ja) * | 1988-11-24 | 1990-05-31 | Kawasaki Steel Corp | 油圧システムの内部リーク診断方法 |
JPH02209977A (ja) * | 1988-10-28 | 1990-08-21 | Internatl Business Mach Corp <Ibm> | 高感度ポジ型フオトレジスト組成物 |
JPH0990637A (ja) * | 1995-07-14 | 1997-04-04 | Fujitsu Ltd | レジスト組成物及びレジストパターンの形成方法 |
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- 2001-04-03 KR KR1020010017571A patent/KR100750267B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02209977A (ja) * | 1988-10-28 | 1990-08-21 | Internatl Business Mach Corp <Ibm> | 高感度ポジ型フオトレジスト組成物 |
JPH02141636A (ja) * | 1988-11-24 | 1990-05-31 | Kawasaki Steel Corp | 油圧システムの内部リーク診断方法 |
JPH0990637A (ja) * | 1995-07-14 | 1997-04-04 | Fujitsu Ltd | レジスト組成物及びレジストパターンの形成方法 |
Non-Patent Citations (3)
Title |
---|
평2-141636(명세서 중의 종래기술) |
평2-209977(명세서 중의 종래기술) |
평9-90637(명세서 중의 종래기술) |
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