KR100735603B1 - Indexer for semiconductor eqipment - Google Patents

Indexer for semiconductor eqipment Download PDF

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KR100735603B1
KR100735603B1 KR1020010001734A KR20010001734A KR100735603B1 KR 100735603 B1 KR100735603 B1 KR 100735603B1 KR 1020010001734 A KR1020010001734 A KR 1020010001734A KR 20010001734 A KR20010001734 A KR 20010001734A KR 100735603 B1 KR100735603 B1 KR 100735603B1
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wafer
indexer
base member
present
settling
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KR1020010001734A
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KR20020061033A (en
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이정섭
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삼성전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명은 스핀들 어셈블리에 축지지되는 부재에 대해서 웨이퍼가 안착되는 안착부위를 열변형에 강한 세라믹 재질로 형성하면서 이러한 안착부재가 축지지부재와 체해결이 가능하게 결합되도록 하여 교체 및 관리가 용이한 반도체 설비용 인덱서에 관한 것으로서, 이를 위해 본 발명은 프로세스 챔버의 내부에 구비되어 웨이퍼를 가스 막질의 형성 위치인 피데스탈에 안치되도록 이송시키는 반도체 설비용 인덱서에 있어서, 스핀들 어셈블리의 허브와 체해결이 가능하게 결합되는 베이스부재(10)와; 상기 베이스부재(10)의 외주연부에 방사상으로 구비되면서 일단이 상기 베이스부재(10)에 체해결이 가능하게 결합되고, 타단에는 웨이퍼가 안치되는 안치홈(21)이 형성되는 세라믹 재질인 복수개의 안치부재(20)로서 이루어지는 구성인바 상기의 구성에 따라 안치부재(20)를 필요에 따라 베이스부재(10)로부터 손쉽게 분리시킬 수 있도록 하여 교체 및 보수가 편리한 이점을 제공한다.
The present invention forms a seating portion on which the wafer is seated with respect to a member supported by the spindle assembly in a ceramic material resistant to heat deformation while allowing the seating member to be coupled with the shaft supporting member so that replacement is easy. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an indexer for semiconductor equipment. To this end, the present invention provides an indexer for semiconductor equipment, which is provided inside a process chamber to transfer a wafer to be placed on a pedestal, which is a gas film formation position, wherein a hub and a solution of a spindle assembly are solved. A base member 10 that is possibly coupled; A plurality of ceramic materials, which are radially provided at the outer circumferential edge of the base member 10, one end thereof is coupled to the base member 10 so as to be physically resolved, and the other end is provided with a settled groove 21 in which a wafer is placed. According to the above configuration, the settlement member 20 can be easily separated from the base member 10 as necessary, thereby providing a convenient replacement and maintenance.

반도체 설비, 프로세스 챔버, 인덱서, 웨이퍼 이송, 열변형Semiconductor equipment, process chambers, indexers, wafer transfer, heat deformation

Description

반도체 설비용 인덱서{Indexer for semiconductor eqipment} Indexer for semiconductor eqipment             

도 1은 종래의 반도체 설비용 인덱서를 도시한 사시도,1 is a perspective view showing a conventional indexer for semiconductor equipment;

도 2는 본 발명에 따른 반도체 설비용 인덱서의 분리 사시도,2 is an exploded perspective view of an indexer for semiconductor equipment according to the present invention;

도 3은 본 발명에 따른 인덱서의 결합 사시도.3 is a combined perspective view of the indexer according to the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

10 : 베이스부재 20 : 안치부재10: base member 20: settling member

21 : 안치홈 30 : 체결수단
21: settled groove 30: fastening means

본 발명은 프로세스 챔버내에서 웨이퍼를 이동시키면서 챔버에 가스 막질이 형성될 수 있도록 하는 반도체 설비용 인덱서에 관한 것으로서, 보다 상세하게는 스핀들 어셈블리에 축지지되는 부재에 대해서 웨이퍼가 안착되는 안착부위를 열변형에 강한 세라믹 재질로 형성하면서 이러한 안착부재가 축지지부재와 체해결이 가능하게 결합되도록 하여 교체 및 관리가 용이한 반도체 설비용 인덱서에 관한 것이 다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an indexer for semiconductor equipment that allows gas film formation to be formed in a chamber while moving the wafer in a process chamber. More specifically, the present invention relates to an indexer for mounting a wafer to a member axially supported by a spindle assembly. The present invention relates to an indexer for semiconductor equipment that is easy to replace and manage by forming a ceramic material resistant to deformation and allowing the mounting member to be coupled with the shaft support member so as to be easily replaceable.

일반적으로 반도체 제조 공정에서 웨이퍼에 가스 막질을 생성하기 위하여 일단 로드 락 챔버에 웨이퍼가 로딩되도록 한 후 트랜스퍼 챔버의 로봇에 의해서 프로세스 챔버내의 제로 스테이션으로 웨이퍼를 이동시키게 된다.In general, in a semiconductor manufacturing process, a wafer is loaded into a load lock chamber in order to generate gaseous film on the wafer, and then the wafer is moved to a zero station in the process chamber by a robot in the transfer chamber.

이렇게 프로세스 챔버의 제로 스테이션에 안착되는 웨이퍼는 통상 도 1에서와 같은 프로세스 챔버내에서의 웨이퍼 이동수단인 인덱서(1)에 의해서 이동을 하면서 인덱서(1)의 저부로 구비되어 웨이퍼에 가스 막질이 형성되도록 하는 피데스탈(미도시됨)에 웨이퍼가 안착되도록 한다.Thus, the wafer seated in the zero station of the process chamber is moved to the bottom of the indexer 1 while being moved by the indexer 1, which is a wafer moving means in the process chamber as shown in FIG. The wafer is allowed to rest on a pedestal (not shown) that permits it.

한편 프로세스 챔버내에서 인덱서(1)는 스핀들 어셈블리에 결합되어 있어 스핀들 어셈블리의 승강작용시 웨이퍼를 피데스탈에서 피데스탈로 이동시키기 위한 회전작용을 하게 된다.On the other hand, the indexer 1 is coupled to the spindle assembly in the process chamber, thereby causing a rotational action to move the wafer from the pedestal to the pedestal during the lifting and lowering of the spindle assembly.

즉 제로 스테이션과 피데스탈간의 웨이퍼 이동을 인덱서(1)에 의해서 수행되도록 하는 것이다.That is, wafer movement between the zero station and the pedestal is performed by the indexer 1.

웨이퍼의 이동은 우선 트랜스퍼 챔버로부터 프로세스 챔버에 옮겨져 제로 스테이션에 놓여지게 되는 웨이퍼를 스핀들 어셈블리와 동시에 리프트 핀을 상승시키므로서 웨이퍼가 일단 상승되도록 하고, 이 상태에서 인덱서(1)를 일정한 각도로 회전시키게 되면 웨이퍼는 인덱서(1)의 피테스탈 직상부에 위치하게 되는데 이때 리프트 핀을 하강시키키게 되면 웨이퍼는 인덱서(1) 일측의 안착부(1a)에 안착되는 상태가 된다.The movement of the wafer causes the wafer to be raised once by lifting the lift pin simultaneously with the spindle assembly for the wafer being transferred from the transfer chamber to the process chamber and placed in the zero station, thereby rotating the indexer 1 at an angle. When the wafer is located directly above the pitestal of the indexer 1, when the lift pin is lowered, the wafer is placed on the seating portion 1a of one side of the indexer 1.

웨이퍼를 인덱서(1)에 안착시킨 상태에서 인덱서(1)를 소정의 각도로 회전시 킨 후 재차 리프트 핀을 상승시켜 재차 인덱서(1)에 안착되어 있는 웨이퍼를 보다 높이 들어올린 다음 인덱서(1)를 반대로 회전시키게 되면 리프트 핀에 지지되는 웨이퍼의 직하부에는 피데스탈이 위치되므로 리프트 핀을 하강시켜 피데스탈에 웨이퍼가 안전하게 안치되도록 하며, 이렇게 피데스탈에 안치된 상태의 웨이퍼에 샤워 헤드로부터 가스를 분사시켜 가스 막질이 형성되도록 하는 것이다.In the state where the wafer is seated on the indexer 1, the indexer 1 is rotated at a predetermined angle, and then the lift pin is raised again to lift the wafer seated on the indexer 1 higher and then the indexer 1 If the rotation is reversed, the pedestal is positioned directly under the wafer supported by the lift pin so that the lift pin is lowered so that the wafer is safely placed on the pedestal. It is sprayed to form a gas film.

하지만 인덱서(1)가 구비되는 프로세스 챔버의 내부는 대단히 높은 온도의 가스 분위기인데 반해 현재 사용되고 있는 인덱서(1)는 거의가 금속의 재질로 이루어져 있으므로 열변형에 약한 단점이 있으므로 특히 웨이퍼를 안착시키게 되는 안치부(1a)가 하향 휘어지는 원인이 되기도 하므로 안치부(1a)에 안치되는 웨이퍼가 미끄러지면서 웨이퍼의 표면 긁힘과 웨이퍼 브로큰을 초래하게 되는 문제점이 있다. However, the inside of the process chamber equipped with the indexer (1) is a gas atmosphere of a very high temperature, whereas the current indexer (1) is made of a mostly metal material has a weak disadvantage in thermal deformation, so it is particularly seated on the wafer Since the settlement part 1a may be bent downward, there is a problem that the surface of the wafer is scratched and the wafer is broken while the wafer placed on the settlement part 1a slides.

이에 본 발명은 상술한 종래 기술의 문제점들을 해결하기 위하여 발명된 것으로서, 본 발명의 주된 목적은 웨이퍼가 안치되는 부위를 별도로 세라믹으로 제작하여 열변형이 방지되도록 하므로서 안정되게 웨이퍼에 가스막질이 형성되도록 하는 것이다.Accordingly, the present invention has been invented to solve the above-mentioned problems of the prior art, and the main object of the present invention is to produce a film of gas on the wafer stably by preventing the thermal deformation by manufacturing ceramics separately from the site where the wafer is placed. It is.

또한 본 발명은 웨이퍼가 안치되는 부위를 스핀들 어셈블리에 지지되도록 하는 부위와 분리형으로 구비되도록 하면서 효율적으로 부분 교체를 할 수 있도록 하므로서 유지 관리가 경제적으로 이루어질 수 있도록 하는데 다른 목적이 있다.In another aspect, the present invention is to provide a separate portion and a portion to be supported by the spindle assembly to support the wafer is placed in the spindle assembly, while allowing efficient replacement of the part while maintaining the maintenance economically.

이와 같은 목적을 달성하기 위하여 본 발명은 프로세스 챔버의 내부에 구비되어 웨이퍼를 가스 막질의 형성 위치인 피데스탈에 안치되도록 이송시키는 반도체 설비용 인덱서에 있어서, 스핀들 어셈블리의 허브와 체해결이 가능하게 결합되는 베이스부재와; 상기 베이스부재의 외주연부에 방사상으로 구비되면서 일단이 상기 베이스부재에 체해결이 가능하게 결합되고, 타단에는 웨이퍼가 안치되는 안치홈이 형성되는 세라믹 재질인 복수개의 안치부재로서 이루어지는 구성이다.In order to achieve the above object, the present invention is provided in the process chamber is provided in the indexer for semiconductor equipment for transferring the wafer to be placed in the pedestal, which is the formation position of the gaseous film, the coupling of the hub assembly of the spindle assembly is possible A base member being; The base member is radially provided on the outer periphery of the base member, one end of which is coupled to the base member so as to be solved, and the other end is configured as a plurality of settle members made of a ceramic material in which a settling groove in which a wafer is placed is formed.

이하 본 발명의 바람직한 실시예를 첨부된 도면에 의하여 보다 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2와 도 3은 본 발명에 따른 인덱서를 도시한 것으로서, 본 발명은 크게 베이스부재(10)와 이 베이스부재(10)에 방사상으로 결합되는 복수개의 안치부재(20)로서 이루어지는 구성이다.2 and 3 illustrate an indexer according to the present invention, and the present invention is composed of a base member 10 and a plurality of settle members 20 radially coupled to the base member 10.

베이스부재(10)는 저부로 스핀들 어셈블리의 허브(미도시됨)에 체해결이 가능하게 결합되는 원형의 평판 플레이트이다.The base member 10 is a circular flat plate that is removably coupled to a hub (not shown) of the spindle assembly at its bottom.

따라서 베이스부재(10)의 판면에는 스핀들 어셈블리의 허브와 스크류 체결에 의해 견고하게 고정될 수 있도록 하는 제1결합홀(11)이 일정한 간격으로 다수 형성되고, 그 외주연에도 일정하게 제2결합홀(12)이 형성되도록 한다.Therefore, a plurality of first coupling holes 11 are formed on the plate surface of the base member 10 at regular intervals so that they can be firmly fixed by screwing the hub of the spindle assembly to each other, and the second coupling holes are constantly fixed on the outer circumference thereof. (12) is formed.

안치부재(20)는 도시된 바와같이 일단이 베이스부재(10)의 제2결합홀(12)에 스크류 체결에 의해 결합되고, 타단은 끝단부에서부터 소정의 길이를 하향 요입되게 하여 웨이퍼가 안치될 수 있도록 하며, 세라믹 재질로서 구비되도록 한다. As shown in the figure, one end of the settling member 20 is coupled to the second coupling hole 12 of the base member 10 by screwing, and the other end of the settling member is recessed downward by a predetermined length from the end thereof to allow the wafer to be settled. It is to be provided as a ceramic material.                     

이렇게 웨이퍼가 안치되도록 요입시킨 안치홈(21)은 종전과 동일하게 평면이 깔대기의 형상으로 이루어진다.As settled groove 21 so that the wafer is placed in this way, the flat surface is formed in the shape of a funnel as before.

특히 안치부재(20)는 전술한 바와같이 일단이 베이스부재(20)의 제2결합홀(12)에 별도의 체결수단(30)을 이용하여 복수개가 등간격으로 결합된다.Particularly, as described above, one end of the settling member 20 is coupled to the second coupling hole 12 of the base member 20 using a separate fastening means 30 at equal intervals.

이와 같이 구성되는 본 발명은 종래의 기술에서도 명시한 바와같이 프로세스 챔버의 내부에서 스핀들 어셈블리의 허브에 베이스부재(10)를 스크류나 볼트와 같은 체결수단(30)을 사용하여 견고하게 체결하고, 베이스부재(10)의 외주연부에도 다수의 안치부재(20)가 방사상으로 체결수단(30)에 의해서 각각 체결되는 구성으로 조립된다.The present invention constituted as described above firmly fastens the base member 10 to the hub of the spindle assembly in the process chamber by using a fastening means 30 such as a screw or a bolt in the process chamber, and the base member. In the outer periphery of 10, a plurality of settled members 20 are assembled in a configuration in which they are respectively fastened by the fastening means 30 radially.

이때 베이스부재(10)는 스핀들 어셈블리의 허브와의 결합에 의해 스핀들 어셈블리의 승강 및 회전작용시 동시에 승강과 회전운동을 하게 된다.At this time, the base member 10 is moved up and down at the same time during the lifting and rotation of the spindle assembly by the coupling of the hub of the spindle assembly.

이러한 본 발명의 인덱서의 외측에는 종전과 마찬가지로 웨이퍼를 승강시키는 구성인 리프트 핀(미도시됨)이 구비된다.The outer side of the indexer of the present invention is provided with a lift pin (not shown), which is a structure for raising and lowering the wafer as before.

한편 안치부재(20)의 안치홈(21)에는 복수개의 웨이퍼 레벨 조정용 스크류(40)가 체결되게 하므로서 안치홈(21)에 안치되는 웨이퍼의 안착 높이가 조정가능하게 구비되도록 한다.Meanwhile, a plurality of wafer level adjusting screws 40 are fastened to the settling groove 21 of the settling member 20 so that the mounting height of the wafer settled in the settling groove 21 is adjustable.

상기한 구성에 따른 본 발명의 작용에 대해서 살펴보면 우선 프로세스 챔버의 제로 스테이션에 웨이퍼가 위치되면 종전과 같이 리프트 핀을 상승시켜 웨이퍼를 소정의 높이로 들려지게 한다.Referring to the operation of the present invention according to the above configuration, first, when the wafer is positioned in the zero station of the process chamber, the lift pin is raised as before, so that the wafer is lifted to a predetermined height.

이때 인덱서는 서로 인접하는 안치부재(20)간 중간 지점에 웨이퍼를 위치시 키게 된다,At this time, the indexer is to place the wafer in the intermediate point between the adjacent settlement member 20,

이렇게 리프트 핀에 의해 웨이퍼를 상승시킨 상태에서 본 발명의 인덱서를 소정의 각도로 회전시키게 되면 웨이퍼의 직하부에는 하나의 안치부재(20)가 위치되고, 이러한 상태에서 리프트 핀을 안치부재(20)보다 낮은 높이로 하강시키게 되면 결국 리프트 핀에 지지되어 있던 웨이퍼는 안치부재(20)의 안치홈에 안착되는 상태가 된다.When the indexer of the present invention is rotated at a predetermined angle while the wafer is raised by the lift pins, one settling member 20 is positioned directly under the wafer, and the lift pin is settled in this state. When lowered to a lower height, the wafer supported by the lift pins eventually enters the settling groove of the settling member 20.

웨이퍼를 안치부재(20)에 안착시킨 상태에서 다시 본 발명의 인덱서와 리프트 핀은 안치부재(20)간 이격 각도만큼 회전하도록 하여 안치부재(20)에 얹혀져 있는 웨이퍼가 피데스탈의 직상부에 위치되도록 한다.In the state in which the wafer is seated on the settling member 20, the indexer and the lift pin of the present invention are rotated by the separation angle between the settling members 20 so that the wafer placed on the settling member 20 is positioned directly on the pedestal. do.

이때 리프트 핀을 상승시키게 되면 안치부재(20)에 안착되어 있는 웨이퍼가 다시 리프트 핀에 의해 보다 상승하게 되고, 이 상태에서 인덱서를 서로 인접하는 안치부재(20)와 안치부재(20)의 중간 각도만큼 회전시킨다.At this time, if the lift pin is raised, the wafer seated on the settling member 20 is further lifted by the lift pin, and in this state, the intermediate angle between the settling member 20 and the settling member 20 adjacent to the indexer is increased. Rotate by.

이러한 상태에서 리프트 핀을 하강시키게 되면 웨이퍼가 피데스탈에 정확히 안치되는 상태가 되며, 이와같은 방식으로 웨이퍼를 이송시켜 프로세스 챔버내에 구비되는 복수의 피데스탈에 각각 안착되도록 한후 피데스탈에 안착시킨 웨이퍼는 샤워 헤드를 이용하여 가스 분사에 의해 웨이퍼면에 필요로 하는 가스 막질을 형성하는 작용을 수행하게 되는 것이다.When the lift pin is lowered in such a state, the wafer is accurately placed on the pedestal, and in this manner, the wafer is transported to be seated on a plurality of pedestals provided in the process chamber, and then the wafer placed on the pedestal is The shower head is used to form a gas film required on the wafer surface by gas injection.

한편 전술한 작용은 종래와 동일하나 다만 본 발명은 프로세스 챔버내에서 고온의 가스 분위기에서도 안치부재(20)는 재질적 특성에 의해 전혀 열변형을 유발하지 않도록 하고 있으므로 웨이퍼의 안전한 이송을 보장할 수가 있게 되는 동시에 이송 중 웨이퍼의 손상을 미연에 방지시킬 수가 있게 된다.On the other hand, the above-described operation is the same as in the conventional method, but the present invention does not cause thermal deformation at all due to the material property even in a high temperature gas atmosphere in the process chamber, thereby ensuring safe transport of the wafer. At the same time, it is possible to prevent damage to the wafer during transfer.

또한 장시간 사용에 따른 교체시에도 종래에는 인덱서 전체를 교체해야만 하였으나 본 발명의 인덱서는 교체가 필요한 안치부재(20)만을 베이스부재(10)로부터 손쉽게 분리하여 교체해주기만 하면 되므로 유지 관리가 대단히 용이하고 비용도 대폭 절감시킬 수가 있게 된다.
In addition, when the replacement according to the long time use, the entire indexer had to be replaced, but the indexer of the present invention can be easily removed and replaced only the settling member 20, which needs to be replaced, from the base member 10. It can also significantly reduce.

상술한 바와 같이 본 발명에 의하면 인덱서의 웨이퍼가 안치되는 안치부재(20)를 열변형에 강한 세라믹 재질로 구비되도록 하면서 이러한 안치부재(20)는 필요에 따라 베이스부재(10)로부터 손쉽게 분리시킬 수 있도록 하여 교체 및 보수에 편리한 이점을 제공하게 된다.








As described above, according to the present invention, while the arranging member 20 in which the wafer of the indexer is placed is provided with a ceramic material resistant to heat deformation, the arranging member 20 can be easily separated from the base member 10 as necessary. This provides a convenient advantage for replacement and maintenance.








Claims (3)

프로세스 챔버의 내부에 구비되어 웨이퍼를 가스 막질의 형성 위치인 피데스탈에 안치되도록 이송시키는 반도체 설비용 인덱서에 있어서,In the indexer for the semiconductor equipment provided in the process chamber to transfer the wafer so as to be placed in the pedestal which is the formation position of the gas film quality, 스핀들 어셈블리의 허브와 체해결이 가능하게 결합되는 베이스부재와; A base member which is coupled to the hub of the spindle assembly so as to be replaceable; 상기 베이스부재의 외주연부에 방사상으로 구비되면서 일단이 상기 베이스부재에 체해결이 가능하게 결합되고, 타단에는 웨이퍼가 안치되는 안치홈이 형성되는 세라믹 재질인 복수개의 안치부재;A plurality of settling members formed of a ceramic material radially provided at an outer periphery of the base member so that one end of the base member can be fixed to the base member and the other end formed with a settling groove for placing a wafer; 로서 이루어지는 반도체 설비용 인덱서.An indexer for semiconductor equipment consisting of. 제 1 항에 있어서, 상기 안치부재의 안치홈에는 복수개의 웨이퍼 레벨 조정용 스크류가 체결되는 반도체 설비용 인덱서.The indexer of claim 1, wherein a plurality of wafer level adjusting screws are fastened to a settling groove of the settling member. 제 1 항에 있어서, 상기 안치부재의 상기 베이스부재에 체결되는 체결수단으로는 볼트를 사용하는 반도체 설비용 인덱서.The indexer of claim 1, wherein a bolt is used as a fastening means fastened to the base member of the settling member.
KR1020010001734A 2001-01-12 2001-01-12 Indexer for semiconductor eqipment KR100735603B1 (en)

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