KR100732742B1 - Method for Monitoring Focus - Google Patents
Method for Monitoring Focus Download PDFInfo
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- KR100732742B1 KR100732742B1 KR1020010037097A KR20010037097A KR100732742B1 KR 100732742 B1 KR100732742 B1 KR 100732742B1 KR 1020010037097 A KR1020010037097 A KR 1020010037097A KR 20010037097 A KR20010037097 A KR 20010037097A KR 100732742 B1 KR100732742 B1 KR 100732742B1
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- focus
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- wedge
- mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
Abstract
본 발명의 포커스 모니터링 방법은, 마스크 상의 패턴을 웨이퍼로 전사하기 위한 노광공정의 포커스를 모니터링하는 방법에 있어서, 마스크에 웨지(wedge) 모양의 패턴을 삽입하여 웨지모양 패턴의 임계치수의 변화를 실시간으로 체크함으로써 노광장치의 포커스를 모니터링하는 것을 특징으로 한다.The focus monitoring method of the present invention is a method for monitoring the focus of an exposure process for transferring a pattern on a mask to a wafer, wherein a wedge-shaped pattern is inserted into the mask to change a change in the threshold of the wedge pattern in real time. It is characterized by monitoring the focus of the exposure apparatus by checking.
웨지(wedge), 포커스(Focus)Wedge, Focus
Description
도 1은 특정 패턴의 포커스 변화에 따른 임계치수 변화를 나타낸 그래프1 is a graph showing a change in the threshold size according to the change in the focus of a specific pattern
도 2는 포커스 확인을 위한 웨지 패턴2 is a wedge pattern for focus confirmation
본 발명은 반도체 소자의 노광 공정에 관한 것으로 특히, 반도체 소자의 노광 공정시 사용하는 마스크에 웨지(wedge) 모양의 패턴을 삽입하여 실시간으로 상기 웨지(wedge) 모양의 임계 치수 변화를 체크하여 노광 장치의 포커스 검사를 하는 포커스 모니터링 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure process of a semiconductor device, and more particularly, by inserting a wedge pattern in a mask used in an exposure process of a semiconductor device and checking a change in the critical dimension of the wedge shape in real time. A focus monitoring method for performing a focus check of an object.
이하, 종래의 포커스 모니터링 방법을 설명하면 다음과 같다.Hereinafter, a conventional focus monitoring method will be described.
종래의 노광 공정에서는 가장 적합한 포커스를 유지하기 위해 수시로 포커스 측정용 마스크를 제조하여, 이를 사용해 노광 장치로 노광 공정을 하여 웨이퍼 상에 시험을 하고, 웨이퍼에 나타난 시험 결과에 따라 노광 장치의 포커스를 조정하였다.
그러나, 이러한 모니터링 방법은 노광한 웨이퍼를 작업자가 직접 계측해야 하므로, 게측자의 주관적인 면이 가미되어, 동일 웨이퍼임에도 계측자 간 포커스를 다르게 읽을 수 있으며, 별도의 포커스 측정용 마스크를 사용하여야 했고, 실제 노광 공정이 진행 중이거나 진행 완료된 웨이퍼에서의 포커스 판단은 패턴의 프로파일 또는 패턴 간의 임계 치수(CD : Critical Demension) 밸런스로만 판단이 가능하였으며, 그 판단 기준이 모호하였다.In the conventional exposure process, in order to maintain the most suitable focus, a focus measuring mask is manufactured from time to time, and the exposure process is performed using the exposure apparatus to test on the wafer, and the focus of the exposure apparatus is adjusted according to the test result shown on the wafer. It was.
However, this monitoring method requires the operator to directly measure the exposed wafer, so that the subjective side of the publisher is added, so that the focus can be read differently between the measuring members even though the same wafer is used, and a separate focus measuring mask has to be used. Determination of the focus on the wafer during the exposure process or the progress of the exposure process could be judged only by the profile of the pattern or the critical dimension (CD) balance between the patterns, and the criterion was ambiguous.
본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로, 반도체 소자의 노광 공정시 사용하는 마스크에 포커스를 모니터링할 수 있는 패턴을 삽입하여 노광 장치의 포커스 검사를 하는 포커스 모니터링 방법을 제공하는 데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and provides a focus monitoring method for performing a focus inspection of an exposure apparatus by inserting a pattern capable of monitoring the focus into a mask used in an exposure process of a semiconductor device. There is a purpose.
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상기 과제를 이루기 위하여 본 발명에 따른 포커스 모니터링 방법은, 마스크 상의 패턴을 웨이퍼로 전사하기 위한 노광공정의 포커스를 모니터링하는 방법에 있어서, 상기 마스크에 웨지(wedge) 모양의 패턴을 삽입하여 상기 패턴의 임계치수의 변화를 실시간으로 체크함으로써 노광장치의 포커스를 모니터링하는 것을 특징으로 한다.In order to achieve the above object, the focus monitoring method according to the present invention is a method for monitoring the focus of an exposure process for transferring a pattern on a mask to a wafer, wherein a wedge-shaped pattern is inserted into the mask to The focus of the exposure apparatus is monitored by checking the change in the threshold in real time.
이하, 첨부된 도면을 참조하여 본 발명의 포커스 모니터링 방법을 상세히 설명하면 다음과 같다.Hereinafter, a focus monitoring method of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 특정 패턴의 포커스 변화에 따른 임계 치수 변화를 나타낸 그래프이다. 1 is a graph illustrating a change in critical dimensions according to a change in focus of a specific pattern.
도 1과 같이, 웨지 패턴의 특성상 베스트 포커스(Best Focus)에서 최대치의 임계치수(CD)를 나타내며 포커스(Focus)가 음의 방향 또는 양의 방향으로 변화할 경우 임계치수는 줄어들게 된다. 따라서, 도1의 경우 해당 노광장치의 베스트 포커스는 약 0.2 임을 알 수 있다.As shown in FIG. 1, the maximum value of the critical value CD is shown in the best focus in the wedge pattern. When the focus changes in the negative or positive direction, the threshold is reduced. Therefore, in the case of Figure 1 it can be seen that the best focus of the exposure apparatus is about 0.2.
즉, 포커스의 변화에 따라 특정 패턴의 임계 치수는 변하는 것이다. 따라서, 이를 역으로 이용하여 임계 치수의 변화를 측정하여 포커스 변화를 측정할 수 있는 것이다.That is, the critical dimension of a particular pattern changes as the focus changes. Therefore, the reverse change may be used to measure the change in focus by measuring the change in critical dimension.
도 2는 포커스 모니터링을 위한 웨지(wedge) 패턴을 도시한 도면이다.2 is a diagram illustrating a wedge pattern for focus monitoring.
도 2와 같이, 웨지 패턴란 쐐기 모양의 패턴으로, 노광 공정을 하게 되면, 포커스 이상시(노광 장치가 포커스를 벗어나서 노광을 하게 되는 것) 임계 치수 변화를 쉽게 측정 할 수 있는 패턴이다.As shown in FIG. 2, the wedge pattern is a wedge-shaped pattern, and when the exposure process is performed, a critical dimension change can be easily measured at the time of focus abnormality (the exposure apparatus is exposed out of focus).
본 발명의 포커스 모니터링 방법은 이러한 웨지 패턴을 반도체 소자를 형성하는 물질층의 노광 영역을 정의하는 마스크에 삽입하여 실시간으로 상기 웨지 패턴의 임계치수 변화를 체크함으로써 상대적인 노광 장치의 포커스를 모니터링한다.The focus monitoring method of the present invention monitors the focus of a relative exposure apparatus by inserting such a wedge pattern into a mask defining an exposure area of a material layer forming a semiconductor device and checking a change in the threshold of the wedge pattern in real time.
이때, 상기 웨지 패턴은 반도체 소자를 형성하는 물질층의 노광영역을 정의하는 기능을 하지 않고, 독립적으로 임계 치수의 변화만을 측정하여 포커스 변화를 판단할 수 있게 한다.In this case, the wedge pattern does not function to define an exposure area of the material layer forming the semiconductor device, and independently determines only the change in the critical dimension to determine the change in focus.
이상과 같이 본 발명의 포커스 모니터링 방법은 다음과 같은 효과가 있다.As described above, the focus monitoring method of the present invention has the following effects.
첫째, 마스크에 포커스를 모니터링할 수 있는 웨지모양의 패턴을 삽입함으로써 노광공정의 포커스 이상시 임계치수의 변화를 쉽게 측정할 수 있으며, 별도의 포커스 측정용 마스크를 제작할 필요가 없어 공정 비용을 절감할 수 있다.First, by inserting a wedge-shaped pattern to monitor the focus on the mask, it is easy to measure the change in the critical dimension in the case of an abnormal focus of the exposure process, and it is not necessary to manufacture a separate focus measuring mask, thereby reducing the process cost. Can be.
둘째, 삽입 패턴의 임계치수를 측정하는 모니터링 방법은 계측자의 주관적인 판단을 방지하고, 포커스의 객관적인 수치화가 가능하다.
Second, the monitoring method for measuring the critical dimension of the insertion pattern prevents the subjective judgment of the measurer and enables objective numerical value of the focus.
Claims (3)
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