KR100664376B1 - 반도체 소자의 커패시터 제조 방법 - Google Patents
반도체 소자의 커패시터 제조 방법 Download PDFInfo
- Publication number
- KR100664376B1 KR100664376B1 KR1020040115677A KR20040115677A KR100664376B1 KR 100664376 B1 KR100664376 B1 KR 100664376B1 KR 1020040115677 A KR1020040115677 A KR 1020040115677A KR 20040115677 A KR20040115677 A KR 20040115677A KR 100664376 B1 KR100664376 B1 KR 100664376B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- metal film
- forming
- mim
- lower metal
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000000059 patterning Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (3)
- 금속/절연체/금속 구조를 갖는 반도체 소자의 커패시터 제조 방법에 있어서,실리콘 기판상에 하부 금속막을 형성하는 단계;상기 하부 금속막을 일정한 높낮이를 갖도록 패터닝하는 단계;절연체 막을 상기 실리콘 기판상에 적층한 후 기계적 화학적 연마공정에 의하여 상기 절연체막을 평탄화하고 식각하여 상기 하부금속막 상에 절연막을 형성하는 단계; 및상부 금속막을 적층하고 패터닝하여 상기 상부 금속막을 상기 절연막상에 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 반도체 소자의 커패시터 제조 방법.
- 제 1항에 있어서,상기 하부 금속막은 배리어 금속막/Al막/반사방지막 순으로 증착하고, 배리어 금속막과 반사 방지막은 Ti/TiN을 사용하는 것을 특징으로 하는 반도체 소자의 커패시터 제조 방법.
- 제 1항에 있어서,상기 높낮이를 갖는 상기 하부 금속막은 다수개의 좁은 공간을 가진 미세 포토레지스터를 이용한 패터닝으로 형성함을 특징으로 하는 반도체 소자의 커패시터 제조 방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040115677A KR100664376B1 (ko) | 2004-12-29 | 2004-12-29 | 반도체 소자의 커패시터 제조 방법 |
US11/319,533 US7276412B2 (en) | 2004-12-29 | 2005-12-29 | MIM capacitor of semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040115677A KR100664376B1 (ko) | 2004-12-29 | 2004-12-29 | 반도체 소자의 커패시터 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060077036A KR20060077036A (ko) | 2006-07-05 |
KR100664376B1 true KR100664376B1 (ko) | 2007-01-02 |
Family
ID=36610474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040115677A KR100664376B1 (ko) | 2004-12-29 | 2004-12-29 | 반도체 소자의 커패시터 제조 방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7276412B2 (ko) |
KR (1) | KR100664376B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1758153A2 (en) * | 2005-08-24 | 2007-02-28 | Tokyo Electron Limited | Perovskite type capacitor and method of manufacturing the same |
KR101032342B1 (ko) * | 2009-04-24 | 2011-05-02 | 삼화콘덴서공업주식회사 | 임베디드 커패시터 및 이를 이용한 임베디드 커패시터 시트, 및 그의 제조방법 |
JP6582669B2 (ja) * | 2015-07-22 | 2019-10-02 | Tdk株式会社 | 薄膜キャパシタ及び半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5407534A (en) * | 1993-12-10 | 1995-04-18 | Micron Semiconductor, Inc. | Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal |
JP2897631B2 (ja) * | 1993-12-28 | 1999-05-31 | 日本電気株式会社 | 半導体集積回路装置および製造方法 |
US6251726B1 (en) * | 2000-01-21 | 2001-06-26 | Taiwan Semiconductor Manufacturing Company | Method for making an enlarged DRAM capacitor using an additional polysilicon plug as a center pillar |
-
2004
- 2004-12-29 KR KR1020040115677A patent/KR100664376B1/ko active IP Right Grant
-
2005
- 2005-12-29 US US11/319,533 patent/US7276412B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20060138593A1 (en) | 2006-06-29 |
KR20060077036A (ko) | 2006-07-05 |
US7276412B2 (en) | 2007-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20210053212A (ko) | 자체 정렬된 이중 패터닝 | |
US8110414B2 (en) | Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodes | |
US6825080B1 (en) | Method for forming a MIM capacitor | |
KR100664376B1 (ko) | 반도체 소자의 커패시터 제조 방법 | |
KR100613281B1 (ko) | 박막 커패시터의 제조 방법 | |
KR100772777B1 (ko) | 반도체 소자 및 그의 형성 방법 | |
TW201117325A (en) | Low parasitic capacitance bit line process for stack DRAM | |
KR100508861B1 (ko) | 박막 커패시터 및 그 제조 방법 | |
JP2006148052A (ja) | 半導体素子の格納電極形成方法 | |
US7846808B2 (en) | Method for manufacturing a semiconductor capacitor | |
KR20050033203A (ko) | 캐패시터 제조 방법 | |
KR20060001362A (ko) | 반도체 소자의 캐패시터 및 그 제조방법 | |
KR100515378B1 (ko) | 박막 커패시터 제조 방법 | |
KR100950752B1 (ko) | 반도체 소자 및 그의 제조방법 | |
KR100607662B1 (ko) | 메탈 절연체 메탈 커패시터 형성방법 | |
KR100644046B1 (ko) | 반도체 소자의 커패시터 제조방법 | |
KR100504198B1 (ko) | 반도체 소자의 mim 커패시터 형성 방법 | |
KR100764452B1 (ko) | 반도체 소자 및 이의 제조 방법 | |
KR20090069543A (ko) | Mim 커패시터 및 mim 커패시터 제조 방법 | |
KR100579862B1 (ko) | 금속-절연체-금속 커패시터 및 그 제조 방법 | |
KR100576513B1 (ko) | 반도체 소자의 엠아이엠 캐패시터 제조방법 | |
KR100527868B1 (ko) | 고용량 엠아이엠 캐패시터 및 그 제조방법 | |
KR20010018260A (ko) | 소자간 콘택 형성 방법 | |
KR100498605B1 (ko) | 반도체 소자의 이너 실린더 캐패시터 형성방법 | |
KR100472034B1 (ko) | 박막 커패시터 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121126 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20131112 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20141111 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151105 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20161117 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20171110 Year of fee payment: 12 |