KR100662782B1 - 레이저 마스크 및 이를 이용한 결정화방법 - Google Patents
레이저 마스크 및 이를 이용한 결정화방법 Download PDFInfo
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- KR100662782B1 KR100662782B1 KR1020040025900A KR20040025900A KR100662782B1 KR 100662782 B1 KR100662782 B1 KR 100662782B1 KR 1020040025900 A KR1020040025900 A KR 1020040025900A KR 20040025900 A KR20040025900 A KR 20040025900A KR 100662782 B1 KR100662782 B1 KR 100662782B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02595—Microstructure polycrystalline
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
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Abstract
Description
Claims (21)
- 제 1 블록과 제 2 블록;상기 제 1 블록에 형성되어 빛을 투과시키는 제 1 투과영역과 빛을 차단하는 제 1 차단영역;상기 제 2 블록에 형성되되, 상기 제 1 차단영역에 대응하는 영역에 형성되어 빛을 투과시키는 제 2 투과영역과 상기 제 1 투과영역에 대응하는 영역에 형성되어 빛을 차단하는 제 2 차단영역; 및상기 제 1 블록과 제 2 블록간의 경계에 형성되어 빛을 차단하는 제 3 차단영역을 포함하며, 상기 제 1 투과영역과 제 2 투과영역은 액티브패턴이 형성되는 단위화소의 액티브영역에 대응하는 것을 특징으로 하는 레이저 마스크.
- 제 1 항에 있어서, 상기 제 1 투과영역은 다수개의 패턴으로 구성되고 상기 제 1 차단영역은 상기 제 1 투과영역을 제외한 영역으로 구성되며, 상기 제 2 투과영역은 다수개의 패턴으로 구성되고 상기 제 2 차단영역은 상기 제 2 투과영역을 제외한 영역으로 구성되는 것을 특징으로 하는 레이저 마스크.
- 제 1 항에 있어서, 상기 제 1 투과영역과 제 2 투과영역은 슬릿 형태를 가지는 것을 특징으로 하는 레이저 마스크.
- 제 3 항에 있어서, 상기 제 1 투과영역과 제 2 투과영역은 가로방향의 긴 슬릿 형태를 가지는 것을 특징으로 하는 레이저 마스크.
- 제 3 항에 있어서, 상기 제 1 투과영역과 제 2 투과영역은 세로방향의 긴 슬릿 형태를 가지는 것을 특징으로 하는 레이저 마스크.
- 삭제
- 삭제
- NxM개의 액티브영역이 정의되어 있는 어레이 기판을 제공하는 단계;제 1 블록과 제 2 블록, 상기 제 1 블록에 형성되어 빛을 투과시키는 제 1 투과영역과 빛을 차단하는 제 1 차단영역, 상기 제 2 블록에 형성되되, 상기 제 1 차단영역에 대응하는 영역에 형성되어 빛을 투과시키는 제 2 투과영역과 상기 제 1 투과영역에 대응하는 영역에 형성되어 빛을 차단하는 제 2 차단영역 및 상기 제 1 블록과 제 2 블록간의 경계에 형성되어 빛을 차단하는 제 3 차단영역을 포함하며, 상기 제 1 투과영역과 제 2 투과영역은 액티브패턴이 형성되는 단위화소의 액티브영역에 대응하는 것을 특징으로 하는 레이저 마스크를 제공하는 단계;상기 레이저 마스크를 통해 상기 실리콘 박막의 액티브영역에 1차 레이저빔을 조사하는 단계;상기 레이저 마스크 또는 기판이 로딩된 스테이지를 X축 방향으로 이동한 후 상기 레이저 마스크를 통해 2차 레이저빔을 조사하는 단계; 및상기 1차 레이저빔의 조사와 2차 레이저빔의 조사를 반복하여 상기 NxM개의 액티브영역을 결정화하는 단계를 포함하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 레이저 마스크의 제 1 블록에는 N'xM'개의 제 1 마스크패턴이 형성되어 있고 상기 제 1 블록에는 N'xM'개의 제 2 마스크패턴이 형성되어 2-샷에 의해 N'xM'개의 액티브영역을 결정화시키는 것을 특징으로 하는 레이저 결정화방법.
- 제 9 항에 있어서, 상기 N'xM'개의 제 1 마스크패턴과 제 2 마스크패턴은 상기 NxM개의 액티브영역에 대응하며, 상기 N'xM'개는 상기 NxM개보다 작거나 같은 것을 특징으로 하는 레이저 결정화방법.
- 제 9 항에 있어서, 상기 제 1 마스크패턴은 다수개의 제 1 투과영역과 제 1 차단영역으로 구성되며, 상기 제 2 마스크패턴은 다수개의 제 2 투과영역과 제 2 차단영역으로 구성되는 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 제 1 투과영역과 제 2 투과영역은 슬릿 형태를 가지는 것을 특징으로 하는 레이저 결정화방법.
- 제 12 항에 있어서, 상기 제 1 투과영역과 제 2 투과영역은 가로방향의 긴 슬릿 형태를 가지는 것을 특징으로 하는 레이저 결정화방법.
- 제 12 항에 있어서, 상기 제 1 투과영역과 제 2 투과영역은 세로방향의 긴 슬릿 형태를 가지는 것을 특징으로 하는 레이저 결정화방법.
- 삭제
- 삭제
- 제 8 항에 있어서, 상기 X축 방향으로의 이동은 상기 제 1 블록 또는 제 2 블록의 X축 방향으로의 한 변의 길이에 해당하는 거리만큼 이동하는 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 제 1 블록 또는 제 2 블록의 Y축 방향으로의 한 변의 길이에 해당하는 거리만큼 상기 레이저 마스크 또는 스테이지를 Y축 방향으로 이동하는 단계를 추가로 포함하는 것을 특징으로 하는 레이저 결정화방법.
- 제 8 항에 있어서, 상기 1차 레이저빔의 조사 및 2차 레이저빔의 조사는 완전 용융 영역의 에너지 밀도를 가지는 레이저빔을 조사하는 것을 특징으로 하는 레이저 결정화방법.
- 제 19 항에 있어서, 상기 완전 용융 영역의 에너지 밀도를 가지는 레이저빔의 조사로 상기 액티브영역의 실리콘 박막은 순차적 수평결정화방법으로 결정화되는 것을 특징으로 하는 레이저 결정화방법.
- 삭제
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040025900A KR100662782B1 (ko) | 2004-04-14 | 2004-04-14 | 레이저 마스크 및 이를 이용한 결정화방법 |
US11/103,632 US7364821B2 (en) | 2004-04-14 | 2005-04-12 | Laser mask and method of crystallization using the same |
CNB2005100672902A CN100507714C (zh) | 2004-04-14 | 2005-04-14 | 激光掩模以及使用该激光掩模的结晶方法和显示器制造方法 |
US12/076,120 US7790341B2 (en) | 2004-04-14 | 2008-03-13 | Laser mask and method of crystallization using the same |
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KR1020040025900A KR100662782B1 (ko) | 2004-04-14 | 2004-04-14 | 레이저 마스크 및 이를 이용한 결정화방법 |
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KR20050100805A KR20050100805A (ko) | 2005-10-20 |
KR100662782B1 true KR100662782B1 (ko) | 2007-01-02 |
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KR1020040025900A KR100662782B1 (ko) | 2004-04-14 | 2004-04-14 | 레이저 마스크 및 이를 이용한 결정화방법 |
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KR100400510B1 (ko) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 장치와 실리콘 결정화 방법 |
KR100624427B1 (ko) * | 2004-07-08 | 2006-09-19 | 삼성전자주식회사 | 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법 |
TWI389316B (zh) * | 2005-09-08 | 2013-03-11 | Sharp Kk | 薄膜電晶體、半導體裝置、顯示器、結晶化方法及製造薄膜電晶體方法 |
KR100742380B1 (ko) * | 2005-12-28 | 2007-07-24 | 삼성에스디아이 주식회사 | 마스크 패턴, 박막 트랜지스터의 제조 방법 및 이를사용하는 유기 전계 발광 표시 장치의 제조 방법 |
DE202008000723U1 (de) * | 2008-01-17 | 2009-05-28 | Leister Process Technologies | Laseranordnung mit elektronischem Maskierungssystem |
US8494228B2 (en) * | 2008-04-03 | 2013-07-23 | Kyushu Institute Of Technology | Personal authentication method using subcutaneous bloodstream measurement and personal authentication device |
US20100129617A1 (en) * | 2008-11-21 | 2010-05-27 | Corrigan Thomas R | Laser ablation tooling via sparse patterned masks |
KR101135537B1 (ko) * | 2010-07-16 | 2012-04-13 | 삼성모바일디스플레이주식회사 | 레이저 조사 장치 |
KR20120008345A (ko) * | 2010-07-16 | 2012-01-30 | 삼성모바일디스플레이주식회사 | 레이저 조사 장치 |
KR101914477B1 (ko) | 2012-09-28 | 2018-11-05 | 코오롱인더스트리 주식회사 | 폴리에스테르 적층필름 |
CN105870265A (zh) | 2016-04-19 | 2016-08-17 | 京东方科技集团股份有限公司 | 发光二极管基板及其制备方法、显示装置 |
JP7195261B2 (ja) | 2017-10-04 | 2022-12-23 | ギガフォトン株式会社 | レーザ加工方法 |
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JP3945805B2 (ja) | 2001-02-08 | 2007-07-18 | 株式会社東芝 | レーザ加工方法、液晶表示装置の製造方法、レーザ加工装置、半導体デバイスの製造方法 |
KR100379361B1 (ko) | 2001-05-30 | 2003-04-07 | 엘지.필립스 엘시디 주식회사 | 실리콘막의 결정화 방법 |
KR100424593B1 (ko) * | 2001-06-07 | 2004-03-27 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화방법 |
US6660576B2 (en) | 2002-03-11 | 2003-12-09 | Sharp Laboratories Of America, Inc. | Substrate and method for producing variable quality substrate material |
KR100997971B1 (ko) | 2003-11-19 | 2010-12-02 | 삼성전자주식회사 | 결정화용 마스크, 이를 이용한 결정화 방법 및 이를포함하는 박막 트랜지스터 표시판의 제조 방법 |
KR20050068207A (ko) * | 2003-12-29 | 2005-07-05 | 엘지.필립스 엘시디 주식회사 | 2-블록 레이저 마스크 및 이를 이용한 결정화방법 |
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2004
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US20050233511A1 (en) | 2005-10-20 |
US20080166668A1 (en) | 2008-07-10 |
KR20050100805A (ko) | 2005-10-20 |
US7364821B2 (en) | 2008-04-29 |
CN100507714C (zh) | 2009-07-01 |
CN1683995A (zh) | 2005-10-19 |
US7790341B2 (en) | 2010-09-07 |
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