KR100627561B1 - Method for reusing the test and dummy wafer - Google Patents
Method for reusing the test and dummy wafer Download PDFInfo
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- KR100627561B1 KR100627561B1 KR1020040114617A KR20040114617A KR100627561B1 KR 100627561 B1 KR100627561 B1 KR 100627561B1 KR 1020040114617 A KR1020040114617 A KR 1020040114617A KR 20040114617 A KR20040114617 A KR 20040114617A KR 100627561 B1 KR100627561 B1 KR 100627561B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
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Abstract
본 발명은 테스트 및 더미 웨이퍼 재사용 방법에 관한 것으로, 보다 자세하게는 듀얼 다마신 기법과 ECP 공정으로 증착된 구리를 저온에서 황산, 과산화수소 및 탈이온수로 구성된 세정액으로 제거하므로써, 혼합비와 온도에 따라 하지막 필름의 손상없이 구리막 만을 깨끗이 제거하여 웨이퍼를 재생할 수 있는 테스트 및 더미 웨이퍼 재사용 방법에 관한 것이다.The present invention relates to a test and dummy wafer reuse method, and more particularly, by removing the copper deposited by the dual damascene technique and the ECP process with a cleaning solution composed of sulfuric acid, hydrogen peroxide and deionized water at low temperature, depending on the mixing ratio and temperature The present invention relates to a test and a method of reusing a dummy wafer, in which a wafer is reclaimed by removing only a copper film without damaging the film.
구리막(Cu Film), 듀얼 다마신, 황산(H2SO4), 과산화수소(H2O2), 탈이온수Cu Film, Dual Damasin, Sulfuric Acid (H2SO4), Hydrogen Peroxide (H2O2), Deionized Water
Description
본 발명은 테스트 및 더미 웨이퍼 재사용 방법에 관한 것으로, 보다 자세하게는 듀얼 다마신 기법과 ECP 공정으로 증착된 구리를 저온에서 황산, 과산화수소 및 물로 구성된 세정액으로 제거하므로써, 혼합비와 온도에 따라 하지막 필름의 손상없이 구리막 만을 깨끗이 제거하여 웨이퍼를 재활용 할 수 있는 테스트 및 더미 웨위퍼 재사용 방법에 관한 것이다.The present invention relates to a test and dummy wafer reuse method, and more particularly, by removing the copper deposited by the dual damascene technique and ECP process with a cleaning solution consisting of sulfuric acid, hydrogen peroxide and water at low temperature, depending on the mixing ratio and temperature The present invention relates to a test and a method of reusing a dummy wafer, in which only a copper film is removed without damage and the wafer can be recycled.
일반적으로, 반도체 산업이 초대규모 직접회로(VLSI: Very Large-Scale Intergration), 극초대규모 집적회로(Ultra Large Scale Integration; ULSI)로 옮겨 가면서 소자의 집적도, 미세화, 동작속도 등을 향상시키는 방향으로 기술이 발전하고 있다. 소자의 디자인 룰(Design Rule)이 협소화되면서 RC(Resistance Capacitance) 지연을 해결하기 위한 일환으로 기존의 알루미늄 배선을 구리 배선으로 변경하고 있다. In general, the semiconductor industry is moving toward Very Large-Scale Intergration (VLSI) and Ultra Large Scale Integration (ULSI) to improve the integration, miniaturization and operation speed of devices. This is evolving. As the design rules of devices become narrower, existing aluminum wiring is being replaced with copper wiring in order to solve the resistance capacitance delay.
구리는 알루미늄에 비해 여러가지 잇점이 있다. 첫째, 전기전도도가 우수하 여 반송전류를 일정하게 유지하면서 배선의 미세화와 고집적화의 실현이 가능하다. 따라서 사용하는 금속층의 양이 감소하고, 생산 코스트를 절감할 수 있게 된다. 낮은 저항 역시 고속성능을 구현한다. 둘째, 구리는 전해도금특성(내전해도금성)이 우수하여 디바이스의 신뢰도를 높일 수 있다. 셋째, 무엇보다도 구리는 동일하게 설계한 알루미늄 기반 디바이스에 비해 수율이 높다.Copper has several advantages over aluminum. First, it is possible to realize finer wiring and higher integration while maintaining a constant current, because of its excellent electrical conductivity. Therefore, the amount of the metal layer to be used is reduced, and the production cost can be reduced. Low resistance also achieves high speed performance. Second, copper is excellent in electroplating characteristics (electrolytic plating resistance), thereby increasing the reliability of the device. Thirdly, copper has a higher yield than aluminum-based devices of the same design.
현재 사용이 가능한 구리 매립 방법 가운데 구리 매립 특성이 비교적 양호한 화학기상증착법(CVD)과 전해도금(Electroplating)법이 선호되고 있다. Among the currently available copper embedding methods, chemical vapor deposition (CVD) and electroplating methods which have good copper embedding characteristics are preferred.
최근 반도체 제조에 구리를 이용한 듀얼 다마신(Dual Damascene) 공정이 도입되어 양산화됨에 따라 구리 ECP(Electronic Chemical Plating) 공정에 사용되어진 테스트 및 더미 웨이퍼의 재활용 기술이 요구되고 있다.Recently, due to the introduction and mass production of a dual damascene process using copper in semiconductor manufacturing, there is a need for a test and dummy wafer recycling technology used in a copper electronic chemical plating (ECP) process.
구리막은 산화력이 강하여 쉽게 제거되지 않는 특성을 지니기 때문에 종래에는 구리막의 제거하기 위하여 황산과 과산화수소를 4:1 내지 6:1로 섞어서 섭씨 90도 내지 140도에서 사용하거나, 질산과 불산을 4:1 내지 6:1로 섞어서 상온에서 사용하였다. Since copper film has strong oxidizing power and is not easily removed, conventionally, sulfuric acid and hydrogen peroxide are mixed at 4: 1 to 6: 1 in order to remove the copper film and used at 90 to 140 degrees Celsius, or nitric acid and hydrofluoric acid are 4: 1. To 6: 1 and used at room temperature.
그러나, 상기와 같은 종래의 방법처럼 불산 또는 질산 등을 이용하여 강제로 식각할 경우, 하지막(Under Layer)이나 실리콘 표면이 산성화학물질에 의해 손상을 입어 재활용이 불가능한 문제점이 있었다.However, in the case of forcibly etching using hydrofluoric acid or nitric acid as in the conventional method as described above, there is a problem that the under layer or the silicon surface is damaged by acidic chemicals and cannot be recycled.
따라서, 본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 황산, 과산화수소 및 탈이온수로 구성된 세정액으로 제거하므로써, 혼합비와 온도에 따라 하지막 필름의 손상업이 구리막을 깨끗이 제거할 수 있는 테스트 및 더미 웨이퍼 재생 방법을 제공함에 본 발명의 목적이 있다.
Therefore, the present invention is to solve the problems of the prior art as described above, by removing the cleaning solution consisting of sulfuric acid, hydrogen peroxide and deionized water, the damage of the base film film according to the mixing ratio and temperature can remove the copper film cleanly It is an object of the present invention to provide a test and dummy wafer regeneration method.
본 발명의 상기 목적은 듀얼 다마신 기법과 ECP 공정 증착된 구리를 스트립하기 위해 황산, 과산화수소 및 탈이온수로 구성된 세정액을 사용하는 것을 특징으로 하는 테스트 및 더미 웨이퍼 재사용 방법에 의해 달성된다.This object of the present invention is achieved by a test and dummy wafer reuse method characterized by using a dual damascene technique and an ECP process using a cleaning solution composed of sulfuric acid, hydrogen peroxide and deionized water to strip deposited copper.
본 발명의 상기 목적과 기술적 구성 및 그에 따른 작용효과에 관한 자세한 사항은 본 발명의 바람직한 실시예에 의해 보다 명확하게 이해될 것이다.Details of the above objects and technical configurations of the present invention and the effects thereof will be more clearly understood by preferred embodiments of the present invention.
듀얼 다마신 기법과 ECP 공정으로 증착된 구리를 스트립하여 웨이퍼를 재사용하기 위해 황산(H2SO4), 과산화수(H2O2) 및 탈이온수(H 20)로 구성된 세정액을 사용하였다. 상기 세정액의 조성은 H2SO4:H2O2:H20=1:1:5 ~ 1:5:30이며, 온도는 섭씨 25도 내지 50도이다. 이 때, 상기 탈이온수 대신에 HF, BHF, NHO3와 같은 산성화학물질을 사용할 수 있다. 구리가 산화 환원 반응을 거쳐 용매인 H2O에 위해 용해되어 제거된다. 일반적인 경우는 황산과 과산화수소만을 혼합하여 사용하므로 두꺼운 구리막을 제거하기 어렵지만, 본 발명은 용매인 탈이온수를 추가하므로써 두꺼운 구리막도 짧은 시간에 제거할 수 있다. In order to reuse the wafer by stripping the copper deposited by the dual damascene technique and the ECP process, a cleaning solution consisting of sulfuric acid (H 2 SO 4 ), peroxide (H 2 O 2 ), and deionized water (H 2 0) was used. The composition of the cleaning solution is H 2 SO 4 : H 2 O 2 : H 2 0 = 1: 1: 5 ~ 1: 5: 30, the temperature is 25 to 50 degrees Celsius. At this time, an acidic chemical such as HF, BHF, NHO 3 may be used instead of the deionized water. Copper is dissolved and removed for H 2 O as a solvent through a redox reaction. In general, since only sulfuric acid and hydrogen peroxide are mixed and used, it is difficult to remove the thick copper film. However, the present invention can remove the thick copper film in a short time by adding deionized water as a solvent.
본 발명은 이상에서 살펴본 바와 같이 바람직한 실시 예를 들어 설명하였으 나, 상기한 실시 예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변경과 수정이 가능할 것이다.As described above, the present invention has been described with reference to preferred embodiments, but is not limited to the above embodiments, and should be made by those skilled in the art to which the present invention pertains without departing from the spirit of the present invention. Various changes and modifications will be possible.
따라서, 본 발명의 테스트 및 더미 웨이퍼 재사용 방법은 듀얼 다마신 기법과 ECP 공정으로 증착된 구리를 황산, 과산화수소 및 탈이온수로 구성된 세정액으로 제거하므로써, 혼합비와 온도에 따라 하지막 필름의 손상 없이 구리막을 깨끗이 제거할 수 있으며, 세정 시간도 단축할 수 있는 효과가 있다.
Therefore, the test and dummy wafer reuse method of the present invention removes copper deposited by the dual damascene technique and the ECP process with a cleaning solution composed of sulfuric acid, hydrogen peroxide, and deionized water, thereby removing the copper film without damaging the underlying film according to the mixing ratio and temperature. Can be removed cleanly, there is an effect that can shorten the cleaning time.
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| KR100627561B1 true KR100627561B1 (en) | 2006-09-21 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001262380A (en) | 2000-03-13 | 2001-09-26 | Nippon Parkerizing Co Ltd | Method for removing copper precipitated film from pickled surface of copper-containing alloy and composition therefor |
| US20040004004A1 (en) | 2002-07-02 | 2004-01-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for reducing cu surface defects following cu ECP |
| KR20050080729A (en) * | 2004-02-10 | 2005-08-17 | 삼성전자주식회사 | Composition for cleaning a semiconductor substrate, method of cleaning and method for manufacturing a conductive structure using the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001262380A (en) | 2000-03-13 | 2001-09-26 | Nippon Parkerizing Co Ltd | Method for removing copper precipitated film from pickled surface of copper-containing alloy and composition therefor |
| US20040004004A1 (en) | 2002-07-02 | 2004-01-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for reducing cu surface defects following cu ECP |
| KR20050080729A (en) * | 2004-02-10 | 2005-08-17 | 삼성전자주식회사 | Composition for cleaning a semiconductor substrate, method of cleaning and method for manufacturing a conductive structure using the same |
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