KR100593162B1 - 이미지센서 및 그 제조방법 - Google Patents
이미지센서 및 그 제조방법 Download PDFInfo
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- KR100593162B1 KR100593162B1 KR1020040019408A KR20040019408A KR100593162B1 KR 100593162 B1 KR100593162 B1 KR 100593162B1 KR 1020040019408 A KR1020040019408 A KR 1020040019408A KR 20040019408 A KR20040019408 A KR 20040019408A KR 100593162 B1 KR100593162 B1 KR 100593162B1
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- microlens
- image sensor
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000002161 passivation Methods 0.000 claims abstract description 22
- 230000001681 protective effect Effects 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 13
- 239000010936 titanium Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 208000003028 Stuttering Diseases 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
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Classifications
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- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J19/00—Household machines for straining foodstuffs; Household implements for mashing or straining foodstuffs
- A47J19/06—Juice presses for vegetables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J19/00—Household machines for straining foodstuffs; Household implements for mashing or straining foodstuffs
- A47J19/02—Citrus fruit squeezers; Other fruit juice extracting devices
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J43/00—Implements for preparing or holding food, not provided for in other groups of this subclass
- A47J43/04—Machines for domestic use not covered elsewhere, e.g. for grinding, mixing, stirring, kneading, emulsifying, whipping or beating foodstuffs, e.g. power-driven
- A47J43/07—Parts or details, e.g. mixing tools, whipping tools
- A47J43/08—Driving mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Food Science & Technology (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (14)
- 포토다이오드를 포함하는 소자들과 소자보호막을 형성하는 단계;상기 소자보호막 상부에 마이크로렌즈를 형성하는 단계;상기 마이크로렌즈 상에 후속 범프 공정으로 부터 상기 마이크로렌즈를 보호하기 위한 마이크로렌즈보호막을 형성하는 단계;상기 마이크로렌즈보호막 및 상기 소자보호막을 선택적으로 식각하여 패드오픈부를 형성하는 단계; 및상기 패드오픈부에 범프를 형성하는 단계를 포함하며,상기 범프를 형성하는 단계는,상기 패드오픈부가 형성된 전체구조 상에 접착층 및 시드층을 순서적으로 형성하는 단계;상기 시드층 상에 상기 패드오픈부가 형성된 영역이 오픈된 포토레지스트 패턴을 형성하는 단계;상기 포토레지스트 패턴의 오픈 부 내에 범프용 금속을 형성하는 단계;상기 포토레지스트 패턴을 제거하는 단계;드러난 상기 시드층 및 접착층을 전면 식각하는 단계를 포함하는 것을 특징으로 하는 이미지센서 제조 방법.
- 제1항에 있어서,상기 마이크로렌즈보호막은 100℃ ∼ 200℃에서 형성되는 것을 특징으로 하는 이미지센서 제조 방법.
- 제1항에 있어서,상기 마이크로렌즈보호막은 상기 마이크로렌즈의 프로파일을 따라 균일한 두께로 형성되는 것을 특징으로 하는 이미지센서 제조 방법.
- 제1항에 있어서,상기 마이크로렌즈보호막은 광투과성이며 무기물인 것을 특징으로 하는 이미지센서 제조 방법.
- 제1항에 있어서,상기 마이크로렌즈보호막은 산화막, 산화질화막 및 질화막의 그룹으로부터 선택된 어느 하나이거나, 상기 그룹으로부터 선택된 적어도 두개의 막이 적층된 것을 특징으로 하는 이미지센서 제조 방법.
- 제1항에 있어서,상기 마이크로렌즈보호막은 100Å∼10000Å의 두께를 갖는 것을 특징으로 하는 이미지센서 제조 방법.
- 삭제
- 제1항에 있어서,상기 전면식각 단계 이후에 파티클을 제거하는 단계를 더 포함하는 것을 특징으로 하는 이미지센서 제조 방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 제1항에 있어서,상기 이미지센서는 CMOS 이미지센서 또는 CCD 인 것을 특징으로하는 이미지센서 제조 방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040019408A KR100593162B1 (ko) | 2004-03-22 | 2004-03-22 | 이미지센서 및 그 제조방법 |
US11/073,074 US7129532B2 (en) | 2004-03-22 | 2005-03-04 | Image sensor and method for fabricating the same |
JP2005068378A JP2005277409A (ja) | 2004-03-22 | 2005-03-11 | イメージセンサ及びその製造方法 |
CNB2005100537968A CN100391005C (zh) | 2004-03-22 | 2005-03-11 | 影像传感器及其制造方法 |
TW094107610A TWI387110B (zh) | 2004-03-22 | 2005-03-11 | 影像感測器及用以製造其之方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040019408A KR100593162B1 (ko) | 2004-03-22 | 2004-03-22 | 이미지센서 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050094237A KR20050094237A (ko) | 2005-09-27 |
KR100593162B1 true KR100593162B1 (ko) | 2006-06-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040019408A KR100593162B1 (ko) | 2004-03-22 | 2004-03-22 | 이미지센서 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7129532B2 (ko) |
JP (1) | JP2005277409A (ko) |
KR (1) | KR100593162B1 (ko) |
CN (1) | CN100391005C (ko) |
TW (1) | TWI387110B (ko) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060041848A1 (en) * | 2004-08-23 | 2006-02-23 | Luigi Lira | Overlaid display of messages in the user interface of instant messaging and other digital communication services |
KR100660323B1 (ko) * | 2004-12-31 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서의 제조방법 |
KR100695518B1 (ko) * | 2005-11-08 | 2007-03-14 | 삼성전자주식회사 | 범프의 형성 방법, 이를 이용한 이미지 센서의 제조 방법및 이에 의해 형성된 반도체 칩 및 이미지 센서 |
KR100870820B1 (ko) | 2005-12-29 | 2008-11-27 | 매그나칩 반도체 유한회사 | 이미지 센서 및 그의 제조방법 |
JP2007184467A (ja) * | 2006-01-10 | 2007-07-19 | Fujifilm Corp | 固体撮像素子 |
KR101176545B1 (ko) * | 2006-07-26 | 2012-08-28 | 삼성전자주식회사 | 마이크로 렌즈의 형성방법과 마이크로 렌즈를 포함한이미지 센서 및 그의 제조방법 |
KR100818525B1 (ko) * | 2006-12-20 | 2008-03-31 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
JP4346655B2 (ja) * | 2007-05-15 | 2009-10-21 | 株式会社東芝 | 半導体装置 |
KR101275798B1 (ko) * | 2007-07-13 | 2013-06-18 | 삼성전자주식회사 | Cmos 이미지 소자 및 그 제조방법 |
US7800239B2 (en) * | 2007-12-14 | 2010-09-21 | Semiconductor Components Industries, Llc | Thick metal interconnect with metal pad caps at selective sites and process for making the same |
US7928527B2 (en) * | 2008-06-04 | 2011-04-19 | International Business Machines Corporation | Delamination and crack resistant image sensor structures and methods |
US8466000B2 (en) | 2011-04-14 | 2013-06-18 | United Microelectronics Corp. | Backside-illuminated image sensor and fabricating method thereof |
US8710612B2 (en) * | 2011-05-20 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having a bonding pad and shield structure of different thickness |
US8664736B2 (en) | 2011-05-20 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the same |
US8716823B2 (en) * | 2011-11-08 | 2014-05-06 | Aptina Imaging Corporation | Backside image sensor pixel with silicon microlenses and metal reflector |
JP6007694B2 (ja) | 2012-09-14 | 2016-10-12 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP6200188B2 (ja) | 2013-04-08 | 2017-09-20 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
JP2015230896A (ja) * | 2014-06-03 | 2015-12-21 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
US10192916B2 (en) | 2017-06-08 | 2019-01-29 | Visera Technologies Company Limited | Methods of fabricating solid-state imaging devices having flat microlenses |
KR20210123852A (ko) * | 2020-04-06 | 2021-10-14 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
CN113471159A (zh) * | 2021-07-02 | 2021-10-01 | 颀中科技(苏州)有限公司 | 一种金属凸块结构的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10200083A (ja) * | 1997-01-14 | 1998-07-31 | Sony Corp | 固体撮像素子 |
JP2000100852A (ja) * | 1998-09-25 | 2000-04-07 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2000138361A (ja) * | 1998-10-29 | 2000-05-16 | Sony Corp | 固体撮像装置及びその製造方法並びに液晶表示装置の製造方法 |
US6307243B1 (en) * | 1999-07-19 | 2001-10-23 | Micron Technology, Inc. | Microlens array with improved fill factor |
US6221687B1 (en) * | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
KR100533166B1 (ko) | 2000-08-18 | 2005-12-02 | 매그나칩 반도체 유한회사 | 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법 |
JP2003037129A (ja) * | 2001-07-25 | 2003-02-07 | Rohm Co Ltd | 半導体装置およびその製造方法 |
US6632700B1 (en) * | 2002-04-30 | 2003-10-14 | Taiwan Semiconductor Manufacturing Company | Method to form a color image sensor cell while protecting the bonding pad structure from damage |
-
2004
- 2004-03-22 KR KR1020040019408A patent/KR100593162B1/ko active IP Right Grant
-
2005
- 2005-03-04 US US11/073,074 patent/US7129532B2/en active Active
- 2005-03-11 JP JP2005068378A patent/JP2005277409A/ja active Pending
- 2005-03-11 CN CNB2005100537968A patent/CN100391005C/zh active Active
- 2005-03-11 TW TW094107610A patent/TWI387110B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI387110B (zh) | 2013-02-21 |
CN100391005C (zh) | 2008-05-28 |
CN1691346A (zh) | 2005-11-02 |
KR20050094237A (ko) | 2005-09-27 |
US20050208692A1 (en) | 2005-09-22 |
TW200539469A (en) | 2005-12-01 |
US7129532B2 (en) | 2006-10-31 |
JP2005277409A (ja) | 2005-10-06 |
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