KR100569262B1 - Manufacturing method of liquid crystal display device - Google Patents
Manufacturing method of liquid crystal display device Download PDFInfo
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- KR100569262B1 KR100569262B1 KR1019980040797A KR19980040797A KR100569262B1 KR 100569262 B1 KR100569262 B1 KR 100569262B1 KR 1019980040797 A KR1019980040797 A KR 1019980040797A KR 19980040797 A KR19980040797 A KR 19980040797A KR 100569262 B1 KR100569262 B1 KR 100569262B1
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- gate insulating
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- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 12
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 9
- 238000003860 storage Methods 0.000 claims abstract description 9
- 238000000059 patterning Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
본 발명은 액정표시소자에 관한 것으로, 보다 상세하게는, 시야각을 개선시킬 수 있는 액정표시소자의 제조방법에 관한 것이다. 본 발명의 액정표시소자의 제조방법은, 금속막의 증착 및 패터닝을 통해 게이트 전극과 보조용량 전극이 형성되고, 상기 게이트 전극과 보조용량을 피복하도록 소정 두께의 게이트 절연막이 도포된 유리기판을 제공하는 단계; 상기 게이트 절연막 상에 감광막을 도포하는 단계; 상기 감광막 패턴을 노광 및 현상하여 화소영역에 배치되는 부분의 상부 표면에 요철이 발생된 감광막 패턴을 형성하는 단계; 상기 감광막 패턴의 형태대로 그 하부의 게이트 절연막을 식각하여 표면 요철을 갖는 게이트 절연막을 형성하는 단계; 상기 표면 요철이 발생된 게이트 절연막의 표면을 따라 소정 두께의 투명 금속막을 전면 증착하는 단계; 및 상기 투명 금속막을 패터닝하여 화소영역 상에 표면 요철을 갖는 화소전극을 형성하는 단계를 포함하는 것을 특징으로 한다.The present invention relates to a liquid crystal display device, and more particularly, to a method of manufacturing a liquid crystal display device that can improve the viewing angle. A method of manufacturing a liquid crystal display device according to the present invention includes providing a glass substrate having a gate electrode and a storage capacitor electrode formed by depositing and patterning a metal film, and having a gate insulating film coated with a predetermined thickness to cover the gate electrode and the storage capacitor. step; Applying a photoresist film on the gate insulating film; Exposing and developing the photoresist pattern to form a photoresist pattern having irregularities on an upper surface of a portion disposed in the pixel region; Etching the lower gate insulating film in the form of the photoresist pattern to form a gate insulating film having surface irregularities; Depositing a transparent metal film of a predetermined thickness along the surface of the gate insulating film on which the surface irregularities are generated; And patterning the transparent metal film to form a pixel electrode having surface irregularities on the pixel region.
Description
본 발명은 액정표시소자에 관한 것으로, 보다 상세하게는, 시야각을 개선시킬 수 있는 액정표시소자의 제조방법에 관한 것이다.The present invention relates to a liquid crystal display device, and more particularly, to a method of manufacturing a liquid crystal display device that can improve the viewing angle.
텔레비젼 및 그래픽 디스플레이 등의 표시 장치에 이용되는 액정표시소자(Liquid Crystal Display : 이하, LCD)는 CRT(Cathod-ray tube)를 대신하여 개발되어져 왔다.Liquid crystal displays (LCDs) used in display devices such as televisions and graphic displays have been developed in place of the CRT (Cathod-ray tube).
특히, 매트릭스 형태로 배열된 각 화소에 스위칭 소자로서 박막 트랜지스터(Thin Film Transistor : 이하, TFT)가 구비되는 TFT LCD는 고속 응답 특성을 갖는 잇점과 높은 화소수에 적합하다는 잇점 때문에 CRT에 필적할만한 표시 화면의 고화질화 및 대형화, 컬러화 등을 실현하는데 크게 기여하고 있다.In particular, a TFT LCD having a thin film transistor (TFT) as a switching element in each pixel arranged in a matrix form is comparable to a CRT because of the advantages of having high-speed response characteristics and suitable for high pixel count. It is greatly contributing to realizing high screen quality, large size, and color.
이러한 액정표시소자는 한 쌍의 유리기판 사이에 액정 분자를 개재시킨 것으로서, 액정 분자의 배열 상태를 전기적으로 제어하여 빛을 투과 또는 차단시켜 소정의 화상 표시를 행한다.The liquid crystal display device includes liquid crystal molecules interposed between a pair of glass substrates, and electrically controls an arrangement state of the liquid crystal molecules to transmit or block light to perform a predetermined image display.
도 1은 종래 LCD의 하부기판을 도시한 단면도로서, 도시된 바와 같이, 유리기판(1)의 일측 상에는 화소의 구동을 제어하기 위한 TFT(2)가 형성되어 있으며, 화소영역에는 투명금속인 ITO(Indium Tin Oxide) 금속으로된 화소전극(4)이 형성되어 있다. 이때, 화소전극(4)은 TFT(2)의 소오스 전극(2a)과 콘택된다.1 is a cross-sectional view illustrating a lower substrate of a conventional LCD. As shown in FIG. 1, a TFT 2 for controlling driving of a pixel is formed on one side of a glass substrate 1, and a transparent metal ITO is formed in a pixel region. (Indium Tin Oxide) A pixel electrode 4 made of metal is formed. At this time, the pixel electrode 4 is in contact with the source electrode 2a of the TFT 2.
여기서, 미설명된 도면부호 3은 보조용량 전극이고, 5는 전극패드이다.Here, reference numeral 3, which is not described, is a storage capacitor electrode, and 5 is an electrode pad.
그러나, 상기와 같은 구조를 갖는 TFT LCD에서는 화소영역에 투과된 광이, 도 2에 도시된 바와 같이, 투과된 방향으로만 직진하기 때문에 시야각이 낮은 문제점이 있었다.However, in the TFT LCD having the above structure, since the light transmitted through the pixel region goes straight only in the transmitted direction, as shown in FIG. 2, the viewing angle is low.
따라서, 상기와 같은 문제점을 해결하기 위하여 안출된 본 발명은, 시야각을 향상시킬 수 있는 LCD의 제조방법을 제공하는데, 그 목적이 있다.Therefore, the present invention devised to solve the above problems, to provide a method of manufacturing an LCD that can improve the viewing angle, the object is.
상기와 같은 목적을 달성하기 위한 본 발명에 따른 LCD의 제조방법은, 금속막의 증착 및 패터닝을 통해 게이트 전극과 보조용량 전극이 형성되고, 상기 게이트 전극과 보조용량을 피복하도록 소정 두께의 게이트 절연막이 도포된 유리기판을 제공하는 단계; 상기 게이트 절연막 상에 감광막을 도포하는 단계; 상기 감광막 패턴을 노광 및 현상하여 화소영역에 배치되는 부분의 상부 표면에 요철이 발생된 감광막 패턴을 형성하는 단계; 상기 감광막 패턴의 형태대로 그 하부의 게이트 절연막을 식각하여 표면 요철을 갖는 게이트 절연막을 형성하는 단계; 상기 표면 요철이 발생된 게이트 절연막의 표면을 따라 소정 두께의 투명 금속막을 전면 증착하는 단계; 및 상기 투명 금속막을 패터닝하여 화소영역 상에 표면 요철을 갖는 화소전극을 형성하는 단계를 포함하는 것을 특징으로 한다.In the LCD manufacturing method according to the present invention for achieving the above object, a gate electrode and a storage capacitor electrode is formed through the deposition and patterning of a metal film, a gate insulating film having a predetermined thickness to cover the gate electrode and the storage capacitor Providing a coated glass substrate; Applying a photoresist film on the gate insulating film; Exposing and developing the photoresist pattern to form a photoresist pattern having irregularities on an upper surface of a portion disposed in the pixel region; Etching the lower gate insulating film in the form of the photoresist pattern to form a gate insulating film having surface irregularities; Depositing a transparent metal film of a predetermined thickness along the surface of the gate insulating film on which the surface irregularities are generated; And patterning the transparent metal film to form a pixel electrode having surface irregularities on the pixel region.
본 발명에 따르면, 백라이트로부터 투과된 광이 화소전극의 표면 요철이 의해 굴절되어 넓은 영역으로 퍼지게 되기 때문에 시야각은 개선된다.According to the present invention, the viewing angle is improved because the light transmitted from the backlight is refracted by the surface irregularities of the pixel electrode to spread to a wide area.
이하, 첨부된 도면에 의거하여 본 발명의 바람직한 실시예를 보다 상세하게 설명하도록 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2a 내지 도 2d는 본 발명의 실시예에 따른 LCD의 제조방법을 설명하기 위한 공정 단면도이다.2A to 2D are cross-sectional views illustrating a method of manufacturing an LCD according to an embodiment of the present invention.
우선, 도 2a에 도시된 바와 같이, 유리기판(11) 상에 게이트용 금속막을 전면 증착한 상태에서, 상기 금속막을 패터닝하여 게이트 전극(도시안됨)과 보조용량 전극(12)을 형성한 후, 상기 전극들이 덮혀지도록 유리기판(11) 전면에, 예를 들어, SiO2막 및 SiON막으로된 게이트 절연막(13)을 형성한다.First, as shown in FIG. 2A, in the state where the gate metal film is entirely deposited on the glass substrate 11, the metal film is patterned to form the gate electrode (not shown) and the storage capacitor electrode 12. A gate insulating film 13 made of, for example, a SiO 2 film and a SiON film is formed on the entire surface of the glass substrate 11 to cover the electrodes.
다음으로, 비표시영역에 배치되는 게이트 전극 부분, 즉, 전극패드 부분(도시안됨)을 노출시키기 위하여, 도 2b에 도시된 바와 같이, 게이트 절연막(13) 상에 감광막을 도포한 후, 상기 감광막에 대한 노광 및 현상 공정을 실시하여 상기 전극패드 부분을 피복하는 있는 게이트 절연막 부분을 노출시키는 콘택홀(도시안됨)이 구비되고, 보조용량 전극 상부의 일정 면적에 걸친 화소영역에 배치되는 부분에는 표면 요철이 발생된 감광막 패턴(14)을 형성한다.Next, in order to expose the gate electrode portion disposed in the non-display area, that is, the electrode pad portion (not shown), as shown in FIG. 2B, after the photosensitive film is coated on the gate insulating film 13, the photosensitive film is coated. A contact hole (not shown) is provided to expose a portion of the gate insulating film covering the electrode pad portion by performing an exposure and development process for the electrode pad, and the surface is disposed on a portion of the pixel region over a predetermined area of the storage capacitor electrode. The photosensitive film pattern 14 in which the unevenness | corrugation generate | occur | produced is formed.
여기서, 상기한 노광은 전극패드를 노출시키도록 하는 패턴과, 화소영역에 배치되는 부분에는 미세 크기의 홀과 같은 패턴들이 구비되어 있는 노광 마스크(도시안됨)를 이용하여 실시하며, 이러한 노광 마스크를 이용한 노광 공정시에는 노광량에 따라 감광막 패턴의 표면에 요철이 발생된다.The exposure may be performed using an exposure mask (not shown) provided with a pattern for exposing the electrode pad and a pattern such as a hole having a fine size in a portion disposed in the pixel region. In the used exposure process, unevenness | corrugation generate | occur | produces on the surface of the photosensitive film pattern according to an exposure amount.
이어서, 도 2c에 도시된 바와 같이, 감광막 패턴(14)의 형태대로 그 하부의 게이트 절연막(13)을 식각하여 상기 게이트 절연막, 즉, SiON막(13b)의 표면에 요철을 형성한다. 이때, 도시되지는 않았으나, 상기한 식각 공정에 의해 전극패드 부분은 노출된다.Subsequently, as shown in FIG. 2C, the bottom gate insulating layer 13 is etched in the form of the photosensitive film pattern 14 to form irregularities on the surface of the gate insulating layer, that is, the SiON film 13b. At this time, although not shown, the electrode pad portion is exposed by the etching process.
이후, 도 2d에 도시된 바와 같이, 감광막 패턴을 제거한 상태에서, 게이트 절연막의 표면을 따라 소정 두께의 ITO 금속막을 증착한 후, 상기 ITO 금속막을 패터닝하여 화소영역 부분에 화소전극(15)을 형성한다.Subsequently, as shown in FIG. 2D, after the photoresist pattern is removed, an ITO metal film having a predetermined thickness is deposited along the surface of the gate insulating film, and then the ITO metal film is patterned to form the pixel electrode 15 in the pixel region. do.
이때, 게이트 절연막(13)은 그의 상부 표면에 표면 요철이 형성되어 있기 때문에 이러한 게이트 절연막 상에 증착되는 ITO 금속막의 표면에도 요철이 형성된다.At this time, since the surface unevenness is formed on the upper surface of the gate insulating film 13, unevenness is also formed on the surface of the ITO metal film deposited on the gate insulating film.
따라서, 상기한 ITO 금속막을 패터닝하여 형성시킨 화소전극의 표면에도 표면 요철이 형성되기 때문에, 도 3에 도시된 바와 같이, 백라이트로부터 투과된 광은 화소전극(15)의 표면 요철에 의해 굴절되어 전방향에 걸쳐 퍼지게 되고, 이에 따라, 시야각은 종래 보다 향상된다.Therefore, since surface irregularities are formed on the surface of the pixel electrode formed by patterning the above-described ITO metal film, as shown in FIG. 3, the light transmitted from the backlight is refracted by the surface irregularities of the pixel electrode 15 to be fully reconstructed. Spreads across the direction, and thus the viewing angle is improved over the prior art.
한편, 도시되지는 않았으나, 하부기판과 합착되는 상부기판의 제작시에는 유리기판 상에 형성되는 블랙 매트릭스의 테이퍼 각을 조절하여 광투과율을 향상시킴으로써, LCD의 시야각을 더욱 개선시킴과 동시에 광효율을 향상시킬 수 있다.Although not shown, when manufacturing the upper substrate bonded to the lower substrate, the light transmittance is improved by adjusting the taper angle of the black matrix formed on the glass substrate, thereby further improving the viewing angle of the LCD and improving the light efficiency. You can.
이상에서와 같이, 본 발명은 화소전극의 표면에 요철이 구비되도록 하여 백라이트로부터 투과된 광을 전방향에 걸쳐 퍼지게 함으로써, 종래에 비해 향상된 시야각 특성을 얻을 수 있다.As described above, according to the present invention, the unevenness is provided on the surface of the pixel electrode to spread the light transmitted from the backlight in all directions, thereby obtaining an improved viewing angle characteristic as compared with the related art.
한편, 여기에서는 본 발명의 특정 실시예에 대하여 설명하고 도시하였지만, 당업자에 의하여 이에 대한 수정과 변형을 할 수 있다. 따라서, 이하, 특허청구의 범위는 본 발명의 진정한 사상과 범위에 속하는 한 모든 수정과 변형을 포함하는 것으로 이해할 수 있다.Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.
도 1은 종래 박막 트랜지스터 액정표시소자의 하부기판을 설명하기 위한 단면도.1 is a cross-sectional view illustrating a lower substrate of a conventional thin film transistor liquid crystal display device.
도 2a 내지 도 2d는 본 발명의 실시예에 따른 액정표시소자의 제조방법을 설명하기 위한 공정 단면도.2A to 2D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to an exemplary embodiment of the present invention.
도 3은 도 2의 화소 전극 표면에서 빛이 굴절되는 모습을 나타낸 도면.3 is a view showing a state in which light is refracted on the surface of the pixel electrode of FIG. 2.
(도면의 주요 부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)
11 : 유리기판 12 : 보조용량 전극11 glass substrate 12 auxiliary electrode
13 : 게이트 절연막 14 : 감광막 패턴13 gate insulating film 14 photosensitive film pattern
15 : 화소전극15: pixel electrode
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| KR1019980040797A KR100569262B1 (en) | 1998-09-30 | 1998-09-30 | Manufacturing method of liquid crystal display device |
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| KR1019980040797A KR100569262B1 (en) | 1998-09-30 | 1998-09-30 | Manufacturing method of liquid crystal display device |
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| KR100569262B1 true KR100569262B1 (en) | 2006-07-31 |
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| KR100800327B1 (en) * | 2000-12-30 | 2008-02-01 | 엘지.필립스 엘시디 주식회사 | Fabricating Method of Liquid Crystal Display with Micro-lens |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63127227A (en) * | 1986-11-18 | 1988-05-31 | Fuji Electric Co Ltd | Liquid crystal display element |
| JPH04214673A (en) * | 1990-12-13 | 1992-08-05 | Sharp Corp | Thin-film transistor and manufacture thereof |
| KR950010115A (en) * | 1993-09-04 | 1995-04-26 | 이헌조 | Thin film transistor |
| JPH07153956A (en) * | 1993-08-09 | 1995-06-16 | Gold Star Electron Co Ltd | Thin film transistor and manufacture thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63127227A (en) * | 1986-11-18 | 1988-05-31 | Fuji Electric Co Ltd | Liquid crystal display element |
| JPH04214673A (en) * | 1990-12-13 | 1992-08-05 | Sharp Corp | Thin-film transistor and manufacture thereof |
| JPH07153956A (en) * | 1993-08-09 | 1995-06-16 | Gold Star Electron Co Ltd | Thin film transistor and manufacture thereof |
| KR950010115A (en) * | 1993-09-04 | 1995-04-26 | 이헌조 | Thin film transistor |
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