KR100520479B1 - Photo-catalyst sol and preparation method thereof - Google Patents
Photo-catalyst sol and preparation method thereof Download PDFInfo
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- KR100520479B1 KR100520479B1 KR10-2002-0073205A KR20020073205A KR100520479B1 KR 100520479 B1 KR100520479 B1 KR 100520479B1 KR 20020073205 A KR20020073205 A KR 20020073205A KR 100520479 B1 KR100520479 B1 KR 100520479B1
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- 239000011941 photocatalyst Substances 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000003960 organic solvent Substances 0.000 claims abstract description 18
- 239000000084 colloidal system Substances 0.000 claims abstract description 11
- 230000007062 hydrolysis Effects 0.000 claims abstract description 6
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 6
- 239000003112 inhibitor Substances 0.000 claims abstract description 6
- 239000006185 dispersion Substances 0.000 claims abstract description 5
- 239000003381 stabilizer Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 14
- 229910000077 silane Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 125000000129 anionic group Chemical group 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000002612 dispersion medium Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000000576 coating method Methods 0.000 abstract description 30
- 239000011248 coating agent Substances 0.000 abstract description 29
- 230000000844 anti-bacterial effect Effects 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004887 air purification Methods 0.000 abstract description 4
- 238000004332 deodorization Methods 0.000 abstract description 4
- 238000000746 purification Methods 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 54
- 239000004408 titanium dioxide Substances 0.000 description 20
- 239000000243 solution Substances 0.000 description 15
- -1 oxygen ions Chemical class 0.000 description 13
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 241000588724 Escherichia coli Species 0.000 description 6
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 241000894006 Bacteria Species 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000845 anti-microbial effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229940100890 silver compound Drugs 0.000 description 4
- 150000003379 silver compounds Chemical class 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002609 medium Substances 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000004599 antimicrobial Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010291 electrical method Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001580 bacterial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000000149 chemical water pollutant Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- FBCCMZVIWNDFMO-UHFFFAOYSA-N dichloroacetyl chloride Chemical compound ClC(Cl)C(Cl)=O FBCCMZVIWNDFMO-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006916 nutrient agar Substances 0.000 description 1
- 235000019645 odor Nutrition 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000008363 phosphate buffer Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/0009—Use of binding agents; Moulding; Pressing; Powdering; Granulating; Addition of materials ameliorating the mechanical properties of the product catalyst
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/48—Silver or gold
- B01J23/50—Silver
-
- B01J35/39—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Abstract
본 발명은 나노은 담지 광촉매 졸 및 그 제조방법에 관한 것으로서, 유기용매에 가수분해 억제제를 0.1 내지 3중량% 첨가하는 단계, 상기 용액에 0.1 내지 10중량%의 반도체 산화물을 첨가하여 반도체 산화물 분산 용액을 제조하는 단계, 상기 반도체 산화물 분산용액에 0.1 내지 10,000ppm농도의 은콜로이드를 0.1 내지 1중량% 첨가하여 은이 첨가된 졸을 제조하는 단계, 상기 은이 첨가된 졸에 경화촉진제 1 내지 3중량% 및 안정제 0.1 내지 1중량%를 첨가하는 단계를 포함하는 것을 특징으로 한다. 이에 의하여 제조된 졸을 지지체에 코팅하였을 때 자외선을 조사하지 아니하고도 그 자체만으로도 항균능력을 가지고, 수질정화, 공기정화 또는 항균 탈취 등에 탁월한 효능을 발휘하는 나노은 담지 광촉매 졸을 제공할 수 있다.The present invention relates to a nano silver-supported photocatalyst sol and a method for preparing the same, comprising adding 0.1 to 3% by weight of a hydrolysis inhibitor to an organic solvent, and adding 0.1 to 10% by weight of a semiconductor oxide to the solution. Step of preparing, adding 0.1 to 1% by weight of silver colloid in a concentration of 0.1 to 10,000ppm to the semiconductor oxide dispersion solution to prepare a sol with the addition of silver, 1 to 3% by weight of a curing accelerator and stabilizer It is characterized by comprising the step of adding 0.1 to 1% by weight. When the sol prepared thereby is coated on a support, it is possible to provide a nano silver-supported photocatalyst sol having excellent antibacterial ability without irradiating ultraviolet rays and exhibiting excellent efficacy in water purification, air purification, or antibacterial deodorization.
또한, 상기 방법에 의해 투명하고 상온건조가 가능하며 담체에 코팅시 코팅막이 균일한 나노은 담지 광촉매 졸을 제공한다.In addition, the above method provides a transparent, room temperature drying, and provides a nano silver-supported photocatalyst sol when the coating film is uniform when coated on a carrier.
Description
본 발명은 나노은 담지 광촉매 졸 및 그 제조방법에 관한 것으로서, 더욱 상세하게는 오폐수, 매립지 침출수 등 난분해성 유기물을 포함한 폐수의 수질정화, 배기가스 처리 및 실내 공기정화와 조명기구, 위생도기, 수족관용 유리, 창문용 유리, 열교환기용 알루미늄, 지붕용 타일, 보도블록 등에 적용되어 항균, 탈취, 유기물질 분해 등의 기능을 수행하는 나노은 담지 광촉매 졸 및 그 제조방법에 관한 것이다.The present invention relates to a nano silver-supported photocatalyst sol and a method for manufacturing the same, and more particularly, water purification, waste gas treatment and indoor air purification and lighting equipment, sanitary ware, aquarium for wastewater including hardly degradable organic matter such as wastewater and landfill leachate. The present invention relates to a nano silver-supported photocatalyst sol and a method for manufacturing the same, which are applied to glass, window glass, heat exchanger aluminum, roof tiles, sidewalk blocks, and the like to perform functions such as antibacterial, deodorization, and decomposition of organic substances.
광촉매란 빛을 흡수하여 유기물 분해, 초친수성, 항균기능 등의 성질을 갖는 물질을 말한다. 이러한 광촉매는 분자상태로 용액중에 존재하는 균일계 광촉매와, 매질에 입자상으로 분산되어 있는 불균일계 광촉매로 분류할 수 있는데, 불균일계 광촉매는 대부분 반도체 물질이다. Photocatalyst refers to a substance that absorbs light and has properties such as organic decomposition, superhydrophilicity, and antibacterial function. Such photocatalysts can be classified into homogeneous photocatalysts present in solution in a molecular state and heterogeneous photocatalysts dispersed in a medium in a medium, and heterogeneous photocatalysts are mostly semiconductor materials.
반도체는 밴드갭(band gap)이상의 에너지를 가지는 빛을 흡수하여 전도대(conduction band)와 가전자대(valence band)에 전자와 정공을 생성한다. 생성된 전자와 정공은 10-12 이상의 시간에 재결합하지만 재결합하기 전에 오염물질 등이 표면에 흡착하게 되면, 강한 산화력을 가지는 정공은 공기 중의 수분을 산화시켜 OH라디칼을 생성하고, 환원력을 가지는 전자는 산소(O2)를 환원 시켜 산소이온(super oxide)을 생성하여 유기물질을 분해 제거한다. 이때 OH라디칼은 소독에 사용되는 과산화수소나 염소, 오존보다 강한 산화력을 가지므로 접촉하는 거의 모든 유기물을 쉽게 분해할 수 있다. 이와 같은 반도체 광촉매를 이용한 산화, 환원반응의 일반적 경로를 다음의 반응식 1 내지 5로 나타내었다.The semiconductor absorbs light having energy above the band gap to generate electrons and holes in the conduction band and the valence band. The generated electrons and holes recombine at a time of 10 -12 or more, but when contaminants and the like are adsorbed on the surface before recombination, holes with strong oxidizing power oxidize moisture in the air to produce OH radicals. Oxygen (O 2 ) is reduced to generate oxygen ions (super oxide) to decompose and remove organic materials. At this time, since OH radicals have stronger oxidizing power than hydrogen peroxide, chlorine, and ozone used for disinfection, almost all organic substances in contact can be easily decomposed. The general route of oxidation and reduction reaction using such a semiconductor photocatalyst is shown in the following reaction schemes 1 to 5.
상기의 원리에 의해, 광촉매는 빛과 반응하여 악취 등의 모든 유기물질을 산화분해하고 탄산가스나 물로 변화시키는 동시에 바이러스를 불활성화시킨다.On the basis of the above principle, the photocatalyst reacts with light to oxidatively decompose all organic substances such as odors, convert them into carbon dioxide gas or water and inactivate viruses.
이와 같이 오염물질을 흡착, 분해할 수 있는 광촉매의 기능을 더욱 향상시키기 위하여 무기항균제 등을 광촉매 졸에 첨가하여 사용하기도 하나, 종래 첨가되던 무기항균제는 그 입자가 커서 코팅액이 투명하지 않다던가 또는 코팅후의 코팅막이 균일하지 아니하다는 문제점이 있었다. 한편 유기항균제도 광촉매 졸에 첨가가능하나 코팅 후 항균에 대한 내구성이 떨어진다는 문제점이 있었다.In order to further improve the function of the photocatalyst to adsorb and decompose contaminants, an inorganic antimicrobial agent may be added to the photocatalyst sol. There was a problem that the later coating film was not uniform. On the other hand, the organic antimicrobial agent can be added to the photocatalyst sol, but there was a problem that the durability against the antimicrobial after coating is poor.
한편 광촉매는 그 반응특성상 자외선의 조사하에서만 그 성질이 발현되므로 빛을 조사하지 아니하면 광촉매의 오염물질 분해능과 항균기능이 미미하다는 문제점이 있다.On the other hand, since photocatalysts exhibit their properties only under the irradiation of ultraviolet rays due to their reaction characteristics, there is a problem in that the degradation of the pollutants and the antibacterial function of the photocatalyst are insignificant unless the light is irradiated.
따라서 본 발명의 목적은, 자외선을 조사하지 아니하고도 그 자체만으로도 항균능력을 가지고 있고 빛의 조사하에서는 수질정화, 공기정화 또는 항균 탈취 등에 탁월한 효능이 있는 나노은 담지 광촉매 졸 및 그 제조방법을 제공하는 것이다. Accordingly, it is an object of the present invention to provide a nano silver-supported photocatalyst sol and a method for producing the same, which have antibacterial properties by themselves without ultraviolet radiation and which are excellent in water purification, air purification, or antibacterial deodorization under light irradiation. .
또한, 나노싸이즈의 은입자에 의하여 투명한 광촉매 졸을 제조하고 담체에 코팅시 코팅막이 균일한 나노은 담지 광촉매 졸 및 그 제조방법을 제공하는 것이다.The present invention also provides a transparent photocatalyst sol made of silver particles of nanosize and provides a nano silver-supported photocatalyst sol having a uniform coating film when coated on a carrier and a method of manufacturing the same.
상기 목적은, 본 발명에 따라, 나노은 담지 광촉매 졸 제조방법에 있어서, 유기용매에 가수분해 억제제를 0.1 내지 3중량% 첨가하는 단계; 상기 용액에 0.1 내지 10중량%의 반도체 산화물을 첨가하여 반도체 산화물 분산 용액을 제조하는 단계; 상기 반도체 산화물 분산용액에 0.1 내지 10,000ppm농도의 은콜로이드를 0.1 내지 1중량% 첨가하여 은이 첨가된 졸을 제조하는 단계; 상기 은이 첨가된 졸에 경화촉진제 1 내지 3중량% 및 안정제 0.1 내지 1중량%를 첨가하는 단계를 포함하는 것에 의해 달성된다.The above object, according to the present invention, nano-supported photocatalyst sol manufacturing method comprising the steps of adding 0.1 to 3% by weight of a hydrolysis inhibitor to the organic solvent; Preparing a semiconductor oxide dispersion solution by adding 0.1 to 10 wt% of semiconductor oxide to the solution; Preparing a sol to which silver is added by adding 0.1 to 1% by weight of a silver colloid having a concentration of 0.1 to 10,000 ppm to the semiconductor oxide dispersion solution; By adding 1 to 3% by weight of a curing accelerator and 0.1 to 1% by weight of a stabilizer to the silver-added sol.
한편 상기 은 콜로이드는, 음이온성 이산화규소 입자를 분산매에 용해시켜 이산화규소 콜로이드 용액을 형성하는 단계; 상기 이산화규소 콜로이드 용액에 양의 전극과 음의 전극을 마련하는 단계; 및 30 내지 100℃ 범위 온도에서 전압을 가하는 단계를 포함하는 것에 의하여 제조된다. Meanwhile, the silver colloid may include dissolving anionic silicon dioxide particles in a dispersion medium to form a silicon dioxide colloid solution; Providing a positive electrode and a negative electrode in the silicon dioxide colloidal solution; And applying a voltage at a temperature in the range from 30 to 100 ° C.
삭제delete
상기 음이온성 이산화규소 입자는 0.1 내지 30중량%이고, 상기 양의 전극은 Ag이며, 상기 음의 전극은 Al, Ag, Fe, Cu, Mg, Zn, Ni, Cr, V, Mn, Ti, Sn 군으로부터 선택된 하나 또는 둘 이상의 혼합된 금속이다. The anionic silicon dioxide particles are 0.1 to 30% by weight, the positive electrode is Ag, and the negative electrode is Al, Ag, Fe, Cu, Mg, Zn, Ni, Cr, V, Mn, Ti, Sn One or more mixed metals selected from the group.
한편 상기 유기용매는 저급 알킬기를 가진 알코올인 것이 바람직하다.On the other hand, the organic solvent is preferably an alcohol having a lower alkyl group.
삭제delete
또한 상기 유기용매는 에탄올 75 내지 90중량%와 2-n부톡시 에탄올 25 내지 10중량%를 혼합한 것이다.In addition, the organic solvent is a mixture of 75 to 90% by weight of ethanol and 25 to 10% by weight of 2-nbutoxy ethanol.
상기 가수분해 억제제는 1 내지 2N의 염산 또는 질산이며, 상기 반도체 산화물은 TiO2, ZnO, WO3, SnO2, MoO3, Fe2O3, BaTiO3, KnbO3 또는 Ta2O3로 이루어진 군중에서 선택된 어느 하나인 것이 바람직하다.The hydrolysis inhibitor is 1 to 2N hydrochloric acid or nitric acid, the semiconductor oxide is a crowd consisting of TiO 2 , ZnO, WO 3 , SnO 2 , MoO 3 , Fe 2 O 3 , BaTiO 3 , KnbO 3 or Ta 2 O 3 It is preferred that any one selected from.
상기 경화촉진제는 실란계 화합물이며 상기 실란계 화합물은 메틸트리메톡시 실란 0.5 내지 2.0중량%와, 3-글리시독시 프로필트리메톡시 실란 0.5 내지 1.0중량%를 혼합한 것이 바람직하다.The curing accelerator is a silane compound, the silane compound is preferably 0.5 to 2.0% by weight of methyl trimethoxy silane and 0.5 to 1.0% by weight of 3-glycidoxy propyltrimethoxy silane.
이하, 본 발명을 더욱 상세하게 설명한다.Hereinafter, the present invention will be described in more detail.
먼저 유기용매에 염산을 첨가하여 상온에서 20분간 교반한다. 유기용매로는 저급 알킬기를 가진 알코올, 구체적으로는 에탄올, 이소프로필 알코올 등을 사용한다. 한편 유기용매로서 무수 에탄올 및 2-n부톡시 에탄올을 75 내지 90 : 25 내지 10 의 비율로 혼합하여 사용하면, 후에 첨가되는 나노은 콜로이드와 이산화티타늄 광촉매가 코팅액내에서 은착화물을 형성하는 것이 방지되므로 코팅막 형성시 균일한 막을 얻을 수 있다. First, hydrochloric acid is added to the organic solvent and stirred at room temperature for 20 minutes. As the organic solvent, an alcohol having a lower alkyl group, specifically ethanol, isopropyl alcohol, or the like is used. On the other hand, when anhydrous ethanol and 2-nbutoxy ethanol are mixed and used in an organic solvent at a ratio of 75 to 90:25 to 10, the nano silver colloid and titanium dioxide photocatalyst added later prevent formation of silver complex in the coating solution. Therefore, a uniform film can be obtained when the coating film is formed.
한편 염산은 가수분해 억제제로서 1내지 2N 농도의 염산을 사용한다. 2N보다 진한 농도의 염산을 사용하면 최종 생성물인 나노은 담지 광촉매 졸이 강산성이 되어 금속표면 등에 코팅할 때 금속이 산화되는 문제가 있고, 1N보다 농도가 낮으면 나노은 담지 광촉매 졸을 장시간 보관할 경우 겔화되어 액이 불안정해지므로 1 내지 2N의 염산이 바람직하다. 염산 대신 질산을 첨가하는 것도 가능하나 질산은 최종 생성된 졸의 코팅성이 좋지 못하다는 단점이 있다.Hydrochloric acid, on the other hand, uses hydrochloric acid at a concentration of 1 to 2N as a hydrolysis inhibitor. If the concentration of hydrochloric acid is higher than 2N, the final product of the nano silver-supported photocatalyst sol becomes strong acid, and there is a problem that the metal is oxidized when coating on the surface of the metal. Since the liquid becomes unstable, hydrochloric acid of 1-2 N is preferable. It is also possible to add nitric acid instead of hydrochloric acid, but nitric acid has the disadvantage of poor coating properties of the resulting sol.
다음으로, 상기 용액에 반도체 산화물을 첨가하는데, 0.1 내지 10중량%의 비율로 첨가한다. 반도체 산화물은 그 자체만으로도 매우 높은 유기물 분해능을 가지고 있으며 이러한 반도체 산화물로는 TiO2, ZnO, WO3, SnO2, MoO3 , Fe2O3, BaTiO3, KnbO3 또는 Ta2O3 등이 있다. ZnO 등은 빛이 조사되면 자신이 빛에 분해되어 유해한 Zn이온 등을 발생시키나, TiO2, 즉 이산화티타늄은 자신이 빛을 받아도 변하지 않아 반영구적으로 사용이 가능할 뿐만 아니라 인체에 무해하고 저가여서 일반적으로 광촉매로 가장 많이 사용하고 있다. 첨가되는 이산화티타늄의 전구체로는 티탄 알콕사이드, 티탄클로라이드가 있으며 이산화티타늄은 입자의 크기가 30nm이하일 때 투명한 코팅액이 제조된다. 30nm이상이면 일차 입자들이 뭉쳐져 이차 입자의 크기가 100nm까지 되므로 투명한 코팅액을 제조할 수 없을 뿐만 아니라 코팅액의 안정성이 떨어진다.Next, the semiconductor oxide is added to the solution at a ratio of 0.1 to 10% by weight. Semiconductor oxides, by themselves, have very high organic resolutions. These semiconductor oxides include TiO 2 , ZnO, WO 3 , SnO 2 , MoO 3 , Fe 2 O 3 , BaTiO 3 , KnbO 3, or Ta 2 O 3 . . When ZnO light is irradiated with light, it decomposes itself to light and generates harmful Zn ions.However, TiO 2 , that is, titanium dioxide does not change even when it receives light, and is not only semi-permanent but also harmless and inexpensive. Most commonly used as a photocatalyst. Precursors of titanium dioxide to be added include titanium alkoxide and titanium chloride, and titanium dioxide has a transparent coating solution when the particle size is 30 nm or less. If more than 30nm primary particles are agglomerated to the size of the secondary particles up to 100nm not only can not produce a transparent coating solution but also the stability of the coating solution is poor.
반도체 산화물 또는 반도체 산화물을 형성할 수 있는 금속 알콕사이드류를 첨가한 후 용액을 30분 내지 60분간 교반하여 투명한 코팅액을 제조한다. 투명한 코팅액을 제조한 후, 여기에 은 화합물 형태인 질산은 수용액 또는 은 콜로이드와, 경화촉진제 및 안정제를 첨가한다.After adding a semiconductor oxide or metal alkoxides which can form a semiconductor oxide, the solution is stirred for 30 to 60 minutes to prepare a transparent coating solution. After preparing a clear coating solution, an aqueous solution of silver nitrate or silver colloid in the form of a silver compound and a curing accelerator and stabilizer are added thereto.
은 콜로이드는 0.1 내지 10,000ppm의 농도로, 전기적 방법 및 화학적 환원법에 의하여 제조할 수 있다.The silver colloid may be prepared by an electrical method and a chemical reduction method at a concentration of 0.1 to 10,000 ppm.
상기 은 콜로이드를 제조하는 전기적 방법에 관하여 더욱 상세하게 설명하면, 은을 양의 전극으로 사용하고, 음의 전극은 Ag, Fe, Cu, Mg, Zn, Ni, Cr, V, Mn, Ti, Sn 또는 이들 중 적어도 한 원소가 포함된 금속합금을 포함하는 전극, 또는 순수 알루미늄, 또는 적어도 합금원소로서 알루미늄이 포함된 합금이고, 이산화규소 콜로이드 액을 전해용액으로 사용한다. 이 이산화규소 콜로이드 액은 함량이 0.1 내지 30중량%인 음이온성 이산화규소 입자를 함유하고 있으며, 전해액의 pH는 8 내지 12의 범위이다. 반응온도는 30 내지 100℃ 사이이며, 이때 전극에 걸어주는 전압은 직류전압 2 내지 120V이다. 이러한 방법에 의하면 1 내지 10nm의 은입자를 가진 10,000ppm의 고농도 은 콜로이드가 제조된다. 이러한 은 콜로이드의 광촉매 코팅액에 첨가량은 0.1 내지 1중량%이다. 한편 은 화합물의 형태인 질산은수용액은 은 농도 20만ppm 기준으로 0.1 내지 3중량%를 첨가한다.In more detail with respect to the electrical method for producing the silver colloid, silver is used as a positive electrode, the negative electrode is Ag, Fe, Cu, Mg, Zn, Ni, Cr, V, Mn, Ti, Sn Or an electrode containing a metal alloy containing at least one of these elements, or pure aluminum, or an alloy containing aluminum at least as an alloying element, and a silicon dioxide colloidal liquid is used as an electrolytic solution. This silicon dioxide colloidal liquid contains anionic silicon dioxide particles having a content of 0.1 to 30% by weight, and the pH of the electrolyte is in the range of 8 to 12. The reaction temperature is between 30 and 100 ° C., and the voltage applied to the electrode is a DC voltage of 2 to 120V. This method produces 10,000 ppm high concentration silver colloid with silver particles of 1 to 10 nm. The amount added to the photocatalyst coating liquid of silver colloid is 0.1 to 1% by weight. Meanwhile, silver nitrate aqueous solution in the form of a silver compound is added in an amount of 0.1 to 3% by weight based on 200,000 ppm of silver.
한편 경화촉진제는 광촉매 졸의 담체에의 코팅시 상온에서 건조할 수 있게 하고, 경도 및 내약품성, 부착력을 높힐 수 있을 뿐만 아니라 나노은이 이산화티타늄에 담지될 수 있도록 하기 위하여 첨가하는 것으로, 실란계 화합물이 사용된다. 실란계 화합물은 메틸트리메톡시 실란 또는 3-글리시독시 프로필트리메톡시 실란 등이 바람직하며 첨가량은 1 내지 3중량%가 효과적이다.On the other hand, the curing accelerator is added to enable the drying of the photocatalyst sol on the carrier at room temperature, to increase hardness, chemical resistance, and adhesion, as well as to allow nanosilver to be supported on titanium dioxide. This is used. The silane-based compound is preferably methyltrimethoxy silane or 3-glycidoxy propyltrimethoxy silane and the like is preferably added in an amount of 1 to 3% by weight.
또한 코팅액의 안정성을 향상시키기 위하여 광촉매 코팅 졸을 제조할 때 안정제로서 아세틸기를 가진 화합물, 바람직하게는 아세틸 아세톤을 0.1 내지 1중량%의 비율로 첨가한다.In addition, in order to improve the stability of the coating solution, when preparing a photocatalyst coating sol, a compound having an acetyl group, preferably acetyl acetone, is added at a ratio of 0.1 to 1% by weight as a stabilizer.
이하 실시예로서 본 발명을 더욱 상세히 설명하나 본 발명의 범위를 한정짓는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to the following Examples, which do not limit the scope of the present invention.
[실시예1]Example 1
1중량%의 이산화티타늄 광촉매와 10ppm의 나노은 콜로이달 입자 1중량%를 0.8중량%의 실란계 화합물, 97중량%의 유기용매, 0.2중량%의 아세틸기를 가지는 화합물과 혼합한 후, 30분동안 1000rpm의 속도로 교반하여 나노은이 담지된 티타니아 광촉매졸을 제조하였다.1 weight percent titanium dioxide photocatalyst and 10 ppm nanosilver colloidal particles were mixed with 0.8 weight percent silane compound, 97 weight percent organic solvent, and 0.2 weight percent acetyl group, followed by 1000 rpm for 30 minutes. Titania photocatalyst sol carrying nano silver was prepared by stirring at a rate of.
[실시예2]Example 2
1중량%의 이산화티타늄 광촉매와 1000ppm의 나노은 콜로이달 입자 1중량%를 1중량%의 실란계 화합물, 96.8중량%의 유기용매, 0.2중량%의 아세틸기를 가지는 화합물과 혼합한후 30분동안 1000rpm의 속도로 교반하여 나노은이 담지된 티타니아 광촉매졸을 제조하였다.1 weight percent titanium dioxide photocatalyst and 1000 ppm nanosilver colloidal particles were mixed with 1 weight percent silane compound, 96.8 weight percent organic solvent, and 0.2 weight percent acetyl group, and then mixed at 1000 rpm for 30 minutes. Stirring at a speed to prepare a titania photocatalyst sol supporting nano silver.
[실시예3]Example 3
1중량%의 이산화티타늄 광촉매와 1중량%의 은화합물, 2중량%의 실란계 화합물, 93.5중량%의 유기용매, 0.5중량%의 아세틸기를 가지는 화합물을 혼합한 후, 30분 동안 1000rpm의 속도로 교반하여 나노은이 담지된 티타니아 광촉매졸을 제조하였다.After mixing 1% by weight of titanium dioxide photocatalyst, 1% by weight of silver compound, 2% by weight of silane compound, 93.5% by weight of organic solvent, and 0.5% by weight of acetyl group-containing compound, at a speed of 1000 rpm for 30 minutes By stirring, a titania photocatalyst sol carrying nanosilver was prepared.
[실시예4]Example 4
2중량%의 이산화티타늄 광촉매와, 1000ppm의 나노은 콜로이달 입자 1중량%를, 2중량%의 실란계 화합물, 94.5중량%의 유기용매, 0.5중량%의 아세틸기를 가지는 화합물과 혼합한 후, 30분 동안 1000rpm의 속도로 교반하여 나노은이 담지된 티타니아 광촉매졸을 제조하였다.30 minutes after mixing 2% by weight of titanium dioxide photocatalyst with 1000 ppm of nanosilver colloidal particles with 2% by weight of silane compound, 94.5% by weight of organic solvent, and 0.5% by weight of acetyl group While stirring at a speed of 1000rpm to prepare a titania photocatalyst sol nano-silver.
[실시예5]Example 5
3중량%의 이산화티타늄 광촉매와, 1000ppm의 나노은 콜로이달 입자 1중량%를, 3중량%의 실란계 화합물, 92.5중량%의 유기용매, 0.5중량%의 아세틸기를 가지는 화합물과 혼합한 후, 30분 동안 1000rpm의 속도로 교반하여 나노은이 담지된 티타니아 광촉매졸을 제조하였다.30 minutes after mixing 3% by weight of titanium dioxide photocatalyst with 1000 ppm of nanosilver colloidal particles with 3% by weight of silane compound, 92.5% by weight of organic solvent, and 0.5% by weight of acetyl group While stirring at a speed of 1000rpm to prepare a titania photocatalyst sol nano-silver.
[실시예6]Example 6
5중량%의 이산화티타늄 광촉매와, 1000ppm의 나노은 콜로이달 입자 1중량%를, 5중량%의 실란계 화합물, 88중량%의 유기용매, 1중량%의 아세틸기를 가지는 화합물과 혼합한 후, 60분 동안 1000rpm의 속도로 교반하여 나노은이 담지된 티타니아 광촉매졸을 제조하였다.60 minutes after mixing 5% by weight of titanium dioxide photocatalyst and 1000 ppm of nanosilver colloidal particles with 5% by weight of silane compound, 88% by weight of organic solvent, and 1% by weight of acetyl group While stirring at a speed of 1000rpm to prepare a titania photocatalyst sol nano-silver.
[실시예7]Example 7
5중량%의 이산화티타늄 광촉매와, 2중량%의 은화합물을, 3중량%의 실란계 화합물, 89중량%의 유기용매, 1중량%의 아세틸기를 가지는 화합물과 혼합한 후, 60분 동안 1000rpm의 속도로 교반하여 나노은이 담지된 티타니아 광촉매졸을 제조하였다.5 wt% titanium dioxide photocatalyst and 2 wt% silver compound were mixed with 3 wt% silane compound, 89 wt% organic solvent, and 1 wt% acetyl group compound for 60 minutes at 1000 rpm. Stirring at a speed to prepare a titania photocatalyst sol supporting nano silver.
본 발명에 따라 제조된 나노은 담지 광촉매 졸의 항균능을 시험하기 위하여 순수 이산화티타늄 광촉매와 비교 항균성시험을 실시하였다. 항균력 시험은 phosphate buffer(pH7.0) 20ml가 든 플레이트(9cm)에 최종농도가 105cfu/ml가 되도록 대장균을 접종하고 37℃에서 배양하면서 3시간 간격으로 pour plate method에 의해 생균수를 측정하였다. 이때 생균수를 위한 배지로는 Nutrient Agar(DIFCO)를 사용하였다.In order to test the antimicrobial activity of the nanosilver-supported photocatalyst sol prepared according to the present invention, a comparative antimicrobial test was performed with a pure titanium dioxide photocatalyst. Antimicrobial activity test was inoculated with E. coli in a final concentration of 10 5 cfu / ml in a plate (9 cm) containing 20 ml of phosphate buffer (pH 7.0) and incubated at 37 ° C. It was. At this time, Nutrient Agar (DIFCO) was used as a medium for viable cells.
도 1은 나노은을 담지하지 아니한 순수 이산화티타늄 광촉매 졸을 금속, 유리에 코팅, 더욱 구체적으로는 순수 이산화티타늄 광촉매를 0.5미크롱의 두께로 코팅한 알루미늄(55mm X 60mm)에 블랙라이트(파장 300 내지 400nm, 최대파장 368nm)를 조사한 후, 잔존한 대장균의 생균수를 비교한 그래프이다. 도 1에 의하면 9시간 경과 후에도 대장균이 초기균수에 비하여 15%정도 밖에 감소하지 않은 것을 알 수 있다. 이 것에 의해 순수 이산화티타늄 광촉매만으로는 균의 성장은 억제할 수 있어도 살균력은 효과적이지 않다는 것을 알 수 있다.Figure 1 is a pure titanium dioxide photocatalyst sol that does not support nano silver on a metal, glass, more specifically, a black light (wavelength 300 to 300mm) in aluminum (55mm x 60mm) coated with a pure titanium dioxide photocatalyst to a thickness of 0.5 micron 400 nm, maximum wavelength of 368 nm) and the number of viable cells of E. coli remaining. 1 shows that even after 9 hours, E. coli reduced only about 15% of the initial bacterial count. This shows that the bactericidal power is not effective even if pure titanium dioxide photocatalyst can suppress the growth of bacteria.
도 2는 본 발명에 따른 나노은을 담지한 이산화티타늄 광촉매를 담체에 코팅한 후, 자외선을 조사하지 아니하고 잔존한 대장균의 생균수를 비교한 그래프이다. 본 그래프에 의하면 자외선 조사없이 6시간만에 대장균수가 10개 이하(항균력 99.9%이상)로 되는 것을 알 수 있다. 2 is a graph comparing the viable cell count of E. coli remaining without irradiating UV light after coating a titanium dioxide photocatalyst carrying nano silver according to the present invention on a carrier. According to this graph, it can be seen that the coliform bacterium becomes 10 or less (more than 99.9% of antibacterial activity) in 6 hours without ultraviolet irradiation.
도 3은 본 발명에 따른 광촉매의 유기물 분해능을 시험하기 위하여, 휘발성 유기화합물 중의 하나인 트리클로로에틸렌(C2HCl3,TCE)을 자외선 조사하에서 광촉매 분해한 결과를 나타낸 그래프이다. 이때 TCE의 초기농도는 약 850ppm이고, 125cm3의 셀을 이용하여 블랙라이트 형광등 (파장 300 내지 400nm, 최대파장 368nm)으로 빛(1.6mW/cm2)을 조사하여 FTIR분광기(Nicolet 800, FT-IR스펙트로미터)에 의해 TCE의 분해속도를 측정하였다. 도 3의 그래프에 나타나 있는 바와 같이, TCE는 10분에서 FTIR분광기의 검출 한계 이하로 분해되어 검출이 되지 않는 것을 확인할 수 있었다. 그리고 주요한 중간 생성물로는 디클로로 아세틸 클로라이드(CHCl2COCl)와 호스진(COCl2)이 검출되었으나, 계속된 광촉매 분해로 곧 이산화탄소로 분해되는 것을 확인할 수 있었다.3 is a graph showing the results of photocatalytic decomposition of trichloroethylene (C 2 HCl 3 , TCE), which is one of volatile organic compounds, under ultraviolet irradiation, in order to test the organic resolution of the photocatalyst according to the present invention. The initial concentration of TCE is from about 850ppm, using a cell of 125cm 3 black light fluorescent lamp (wavelength 300 to 400nm, a maximum wavelength of 368nm) light (1.6mW / cm 2) irradiation by FTIR spectroscopy (Nicolet 800, a FT- IR spectrometer) was used to measure the degradation rate of TCE. As shown in the graph of FIG. 3, it was confirmed that the TCE was decomposed at or below the detection limit of the FTIR spectrometer at 10 minutes and was not detected. Dichloro acetyl chloride (CHCl 2 COCl) and hosgene (COCl 2 ) were detected as major intermediate products. However, it was confirmed that carbon dioxide was decomposed soon after continued photocatalytic decomposition.
한편 본 발명에 따라 제조된 나노은 담지 광촉매 졸은 타일, 세라믹, 유리, 금속 등에 스프레이 법, 그라비아법, 담그는 법 등의 코팅 방법으로 담체에 코팅하고 120℃에서 10분간 건조시켜 항균, 자기정화, 항염, 유기물질 분해 등의 기능을 가진 코팅막을 형성시킬 수 있다. 코팅을 행하기 전 고체담체의 표면에 묻은 먼지나 유분을 아세톤 등과 같은 유기용매로 씻어주면 부착성을 향상시킬 수 있다.Meanwhile, the nano silver-supported photocatalyst sol prepared according to the present invention is coated on a carrier by a coating method such as a spray method, a gravure method, or a dipping method in a tile, ceramic, glass, metal, etc. It is possible to form a coating film having a function such as decomposition of organic materials. Before coating, the adhesiveness can be improved by washing the dust or oil on the surface of the solid carrier with an organic solvent such as acetone.
또한 코팅두께를 조절하여 상기의 기능을 더욱 더 향상시킬 수 있지만 코팅두께가 2미크롱 이상이 되면 코팅막의 균열의 원인이 된다. 또한 코팅막의 두께가 0.1미크롱 이하일 경우는 광촉매의 기능이 현저히 저하되므로 0.3 내지 0.5의 코팅막의 두께가 바람직 하다. 코팅된 면을 에탄올 등으로 표면처리하면 더 높은 광촉매 기능을 가진 코팅막을 제조할 수 있다.In addition, it is possible to further improve the above function by adjusting the coating thickness, but if the coating thickness is more than 2 microns, it causes the crack of the coating film. In addition, when the thickness of the coating film is 0.1 micron or less, since the function of the photocatalyst is significantly reduced, the thickness of the coating film of 0.3 to 0.5 is preferable. Surface treatment of the coated surface with ethanol or the like can produce a coating film having a higher photocatalytic function.
이상 설명한 바와 같이, 본 발명에 따르면, 자외선을 조사하지 아니하고도 그 자체만으로도 항균능력을 가지고 있고 빛의 조사하에서는 수질정화, 공기정화 또는 항균 탈취 등에 탁월한 효능이 있는 나노은 담지 광촉매 졸 및 그 제조방법을 제공할 수 있다 As described above, according to the present invention, a nano silver-supported photocatalyst sol and a method for preparing the same have excellent antibacterial ability without irradiating ultraviolet rays and have excellent efficacy in water purification, air purification, or antibacterial deodorization under light irradiation. Can provide
또한 나노싸이즈의 은입자에 의하여 투명한 광촉매 졸을 제조하고 담체에 코팅시 코팅막이 균일한 나노은 담지 광촉매 졸을 제조할 수 있다.In addition, a transparent photocatalyst sol may be prepared by the silver particles of the nanosize, and a nano silver-supported photocatalyst sol having a uniform coating film may be prepared when coated on a carrier.
도 1은 나노은이 담지되지 아니한 순수 이산화티타늄을 담체에 코팅한 후, 자외선 조사하에서 잔존한 대장균의 생균수를 비교한 그래프이고,1 is a graph comparing the viable cell count of E. coli remaining under ultraviolet irradiation after coating pure titanium dioxide not supported with nanosilver on a carrier,
도 2는 본 발명에 따른 나노은을 담지한 이산화티타늄 광촉매 졸을 담체에 코팅한 후, 자외선의 조사 없이 잔존한 대장균의 생균수를 비교한 결과를 나타낸 그래프이며,2 is a graph showing the result of comparing the viable cell count of E. coli remaining without irradiation of ultraviolet light after coating the titanium dioxide photocatalyst sol carrying nanosilver according to the present invention,
도 3은 본 발명에 따른 나노은을 담지한 이산화티타늄 광촉매 졸을 담체에 코팅한 후, 자외선의 조사시간에 따른 트리클로로에틸렌의 농도변화를 나타낸 그래프이다.3 is a graph showing the concentration change of trichloroethylene according to the irradiation time of ultraviolet light after coating the support of the titanium dioxide photocatalyst sol carrying the nano silver according to the present invention.
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| JPH0422438A (en) * | 1990-05-16 | 1992-01-27 | Agency Of Ind Science & Technol | Preparation of fine metal supported photocatalyst |
| JPH09227319A (en) * | 1995-12-21 | 1997-09-02 | Ishihara Sangyo Kaisha Ltd | Antimicrobial powder and production thereof |
| JP2000051708A (en) * | 1998-08-10 | 2000-02-22 | Showa Alum Corp | Photocatalyst coating film and its forming method |
| KR20010075752A (en) * | 2000-01-17 | 2001-08-11 | 김영웅 | coating solution and its preparing method for titanium dioxide photo-catalyst |
| KR20020045856A (en) * | 2000-12-11 | 2002-06-20 | 윤영진 | Photocatalyst coating sol capable of hardening at low temperature and preparation method thereof |
| KR20040018227A (en) * | 2002-08-23 | 2004-03-02 | 정철상 | Nanocomposite dispersion with complex function and method for preparation thereof |
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| JPH0422438A (en) * | 1990-05-16 | 1992-01-27 | Agency Of Ind Science & Technol | Preparation of fine metal supported photocatalyst |
| JPH09227319A (en) * | 1995-12-21 | 1997-09-02 | Ishihara Sangyo Kaisha Ltd | Antimicrobial powder and production thereof |
| JP2000051708A (en) * | 1998-08-10 | 2000-02-22 | Showa Alum Corp | Photocatalyst coating film and its forming method |
| KR20010075752A (en) * | 2000-01-17 | 2001-08-11 | 김영웅 | coating solution and its preparing method for titanium dioxide photo-catalyst |
| KR20020045856A (en) * | 2000-12-11 | 2002-06-20 | 윤영진 | Photocatalyst coating sol capable of hardening at low temperature and preparation method thereof |
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