KR100470022B1 - 액정표시장치와 그 제조방법 - Google Patents
액정표시장치와 그 제조방법 Download PDFInfo
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- KR100470022B1 KR100470022B1 KR10-2002-0044586A KR20020044586A KR100470022B1 KR 100470022 B1 KR100470022 B1 KR 100470022B1 KR 20020044586 A KR20020044586 A KR 20020044586A KR 100470022 B1 KR100470022 B1 KR 100470022B1
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- substrate
- color filter
- black matrix
- thin film
- film transistor
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- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 62
- 239000011159 matrix material Substances 0.000 claims description 57
- 239000010410 layer Substances 0.000 claims description 44
- 239000010409 thin film Substances 0.000 claims description 41
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000011575 calcium Substances 0.000 claims description 10
- 239000000460 chlorine Substances 0.000 claims description 10
- 239000011734 sodium Substances 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 2
- 239000011347 resin Substances 0.000 description 6
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- 238000000151 deposition Methods 0.000 description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 150000001455 metallic ions Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 potassium (K) Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
Abstract
Description
Claims (19)
- 기판과;기판 상에 서로 교차하여 화소영역을 정의하는 게이트 배선과 데이터 배선과;상기 게이트 배선과 데이터 배선의 교차지점에 구성되는 박막트랜지스터와;상기 박막트랜지스터와 접촉하면서 화소영역에 위치한 투명 화소전극과;상기 박막트랜지스터와 데이터 배선 및 게이트 배선의 상부에 구성된 블랙매트릭스와;상기 블랙매트릭스 사이의 상기 화소전극 상에 위치하고, 상기 화소 전극에 인가된 전압을 전달하는 도전성 컬러필터를 포함하는 액정표시장치용 어레이기판.
- 제 1 항에 있어서,상기 박막트랜지스터는 상기 게이트 배선과 연결된 게이트 전극과 액티브층과, 상기 데이터 배선과 연결된 소스 전극과 이와 소정간격 이격된 드레인 전극을 포함하는 액정표시장치용 어레이기판.
- 제 1 항에 있어서,상기 블랙매트릭스는 1×10E9 이상의 저항값을 가지는 액정표시장치용 어레이기판.
- 제 1 항에 있어서,상기 도전성 컬러필터는 도전성 폴리머 또는 도전성 금속 이온을 혼합한 액정표시장치용 어레이기판.
- 제 4 항에 있어서,상기 도전성 컬러필터는 1×10E6이하의 저항값을 가지는 액정표시장치용 어레이기판.
- 제 1 항에 있어서,상기 블랙매트릭스와 컬러필터는 칼륨(K), 나트륨(Na), 칼슘(Ca), 염소(Cl)등의 불순물 이온이 1ppm 이하인 액정표시장치용 어레이기판.
- 제 1 항에 있어서,상기 컬러필터와 블랙매트릭스는 동시에 평탄한 표면을 가지도록 구성된 액정표시장치용 어레이기판.
- 기판 상에 서로 교차하여 화소영역을 정의하는 게이트 배선과 데이터 배선을 형성하는 단계와;상기 게이트 배선과 데이터 배선의 교차지점에 박막트랜지스터를 형성하는 단계와;상기 박막트랜지스터와 접촉하는 동시에 화소영역에 위치하는 투명 화소전극을 형성하는 단계와;상기 박막트랜지스터와 데이터 배선 및 게이트 배선의 상부에 블랙매트릭스를 형성하는 단계와;상기 블랙매트릭스 사이의 상기 화소전극 상에 위치하고, 상기 화소 전극에 인가된 전압을 전달하는 도전성 컬러필터를 형성하는 단계를 포함하는 액정표시장치용 어레이기판 제조방법.
- 제 8 항에 있어서,상기 박막트랜지스터는 상기 게이트 배선과 연결된 게이트 전극과 액티브층과, 상기 데이터 배선과 연결된 소스 전극과 이와는 소정간격 이격된 드레인 전극을 포함하는 액정표시장치용 어레이기판 제조방법.
- 제 8 항에 있어서,상기 블랙매트릭스는 1×10E9 이상의 저항값을 가지는 액정표시장치용 어레이기판 제조방법.
- 제 8 항에 있어서,상기 도전성 컬러필터는 도전성 폴리머 또는 도전성 금속 이온을 혼합한 액정표시장치용 어레이기판 제조방법.
- 제 11 항에 있어서,상기 컬러필터는 1×10E6이하의 저항값을 가지는 액정표시장치용 어레이기판 제조방법.
- 제 8 항에 있어서,상기 블랙매트릭스와 컬러필터는 칼륨(K), 나트륨(Na), 칼슘(Ca), 염소(Cl)등의 불순물 이온이 1ppm 이하인 액정표시장치용 어레이기판 제조방법.
- 제 8 항에 있어서,상기 컬러필터가 형성된 기판의 전면에 배향막을 형성하는 단계를 더욱 포함하는 액정표시장치용 어레이기판 제조방법.
- 제 8 항에 있어서,상기 컬러필터와 블랙매트릭스의 표면을 동시에 평탄화하는 단계를 더욱 포함하는 액정표시장치용 어레이기판 제조방법.
- 기판 상에 서로 교차하여 화소영역을 정의하는 게이트 배선과 데이터 배선을 형성하는 단계와;상기 게이트 배선과 데이터 배선의 교차지점에 박막트랜지스터를 형성하는 단계와;상기 박막트랜지스터와 게이트 배선 및 데이터 배선이 형성된 기판의 전면에 상기 박막트랜지스터의 일부를 노출하는 보호막을 형성하는 단계와;상기 노출된 드레인 전극과 접촉하면서 상기 화소영역에 위치하는 화소전극을 형성하는 단계와;상기 박막트랜지스터와 데이터 배선 및 게이트 배선의 상부에 블랙매트릭스를 형성하는 단계와;상기 블랙매트릭스 사이의 상기 화소전극 상에 위치하고, 상기 화소 전극에 인가된 전압을 전달하는 도전성 컬러필터를 형성하는 단계와;상기 블랙매트릭스와 컬러필터가 구성된 기판의 전면에 포토레지스트층을 형성하는 단계와;상기 포토레지스트층이 형성된 기판의 상부에, 투과부와 차단부로 구성되고차단부는 상기 블랙매트릭스에 대응하여 위치하는 마스크를 위치시키는 단계와;상기 PR층을 노광하고 현상하여, 상기 블랙매트릭스의 상부에 서로 근접하여 위치한 서로 다른 색깔의 컬러필터를 노출하는 단계와;상기 노출된 컬러필터를 제거하고, 남겨진 PR층을 제거하는 단계와;상기 컬러필터와 블랙매트릭스의 표면을 평탄화하는 단계를 포함하는 액정표시장치용 어레이기판 제조방법.
- 제 16 항에 있어서,상기 PR층은 네가티브 타입인 액정표시장치용 어레이기판 제조방법.
- 서로 이격하여 구성된 제 1기판과 제 2 기판과;상기 제 1 기판의 상부에 서로 교차하여 화소영역을 정의하는 게이트 배선과 데이터 배선과;상기 게이트 배선과 데이터 배선의 교차지점에 구성되는 박막트랜지스터와;상기 박막트랜지스터와 접촉하면서 화소영역에 구성된 화소전극과;상기 박막트랜지스터와 데이터배선과 게이트 배선의 상부에 구성된 블랙매트릭스와;상기 블랙매트릭스 사이의 상기 화소전극 상에 위치하고, 상기 화소 전극에 인가된 전압을 전달하는 도전성 컬러필터와;상기 제 1 기판과 마주보는 제 2 기판의 일면에 구성된 투명한 공통전극과;상기 제 1 기판의 하부에 구성된 백라이트를 포함한 액정표시장치.
- 삭제
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