KR100442968B1 - Method for forming photoresist layer of semiconductor device using tdur-n9 photoresist layer - Google Patents

Method for forming photoresist layer of semiconductor device using tdur-n9 photoresist layer Download PDF

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KR100442968B1
KR100442968B1 KR1019970030329A KR19970030329A KR100442968B1 KR 100442968 B1 KR100442968 B1 KR 100442968B1 KR 1019970030329 A KR1019970030329 A KR 1019970030329A KR 19970030329 A KR19970030329 A KR 19970030329A KR 100442968 B1 KR100442968 B1 KR 100442968B1
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photosensitive film
photoresist layer
semiconductor device
forming
tdur
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KR1019970030329A
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Korean (ko)
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KR19990006107A (en
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허철
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주식회사 하이닉스반도체
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A method for forming a photoresist layer of a semiconductor device is provided to solve simultaneously the resolution limit of a DUV(Deep Ultra-Violet) stepper and the throughput of an electron-beam by using a TDUR-N9 photoresist layer. CONSTITUTION: A TDUR-N9 photoresist layer for simultaneously reacting a DUV ray and an electron-beam is coated on an etch target layer. The photoresist layer on a frame region(10) and a test pattern region(20) is exposed by using a DUV stepper, and the photoresist layer on cell and peripheral regions(30) is exposed by using an electron-beam. Then, the exposed photoresist layer is developed.

Description

반도체 소자의 감광막 형성방법Method for Forming Photosensitive Film of Semiconductor Device

본 발명은 반도체 소자의 감광막 형성방법에 관한 것으로, 특히 리소그래피 공정에 있어서 전자빔(E-beam) 및 원자외선 스테퍼(stepper)에 반응하는 TDUR-N9 감광막을 이용하여 셀 및 주변회로영역과 테스트패턴영역 및 프레임영역을 노광하고 현상함으로서 보다 개선된 해상력과 쓰루-풋(through-put)현상을 해결하는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a photoresist film of a semiconductor device. In particular, in a lithography process, a cell, a peripheral circuit region, and a test pattern region are formed by using a TDUR-N9 photoresist that reacts with an electron beam (E-beam) and an ultraviolet ray stepper. And a technique for solving the improved resolution and through-put phenomenon by exposing and developing the frame region.

최근, 반도체 장치의 초고집적화 추세는 미세패턴 형성 기술의 발전에 큰 영향을 받고 있으며, 특히 감광막패턴은 반도체 장치의 제조공정에 있어서 매우 중요한 공정이다.In recent years, the trend of ultra-high integration of semiconductor devices has been greatly influenced by the development of fine pattern formation technology, and in particular, the photoresist pattern is a very important process in the manufacturing process of semiconductor devices.

또한, 반도체 소자의 집적도가 증가할수록 캐패시터의 형성공정과 라소그래피의 기술은 고집적 메모리소자 실현의 관건이 되었다 더구나, 반도체 소자가 기가(Giga)급 이상으로 초고집적화된 메모리 소자에는 저장전극 하부의 박막을 제조하기 위한 감광막 마스크의 형성시 후속공정을 고려할 때 감광막 마스크간에는 약 0.2㎛ 정도의 여유공간이 필요하다.In addition, as the degree of integration of semiconductor devices increases, the process of forming capacitors and the technique of lithography have become a key to the realization of highly integrated memory devices. Considering the subsequent steps in forming the photoresist mask for manufacturing the photoresist mask, a clearance of about 0.2 μm is required between the photoresist masks.

그러나, 반도체 소자가 기가(Giga)급 이상으로 초고집적화되고 미세할 될수록 노광공정에 의한 감광막 마스크간에는 여유공간을 확보가 용이하지 않아 쇼트(short)되는 문제점이 있다.However, as semiconductor devices become more highly integrated and finer than Giga level, there is a problem in that a short space is not easily secured between the photoresist masks by the exposure process.

한편, 리소그래피 공정에 있어서 기존의 DUV 스테퍼로는 0.2㎛ 이하의 패턴을 형성하는데 한계를 갖고 있으며, E-beam 장비는 우수한 해상력(0.1㎛)을 갖고 있음에도 불구하고 스테퍼에 비해서 쓰루-풋이 떨어지는 단점이 있기 때문에 양산에 적용하지 못하고 있다.On the other hand, in the lithography process, the conventional DUV stepper has a limitation in forming a pattern of 0.2 μm or less, and although the E-beam equipment has excellent resolution (0.1 μm), the through-foot is lower than that of the stepper. Because of this, it does not apply to mass production.

또한, 새롭게 개발되고 있는 E-beam용 감광막은 가격이 고가일뿐만 아니라 디바이스에 적용가능 하는지의 여부가 확인되지 않은 상태이다.In addition, the newly developed photosensitive film for E-beam is not only expensive but it is not confirmed whether it is applicable to the device.

이에, 본 발명은 상기한 문제점을 해결하기 위한 것으로 리소그래피 공정시 원자외선(DUV) 스테퍼와 전자빔(E-beam)에 반응하는 TDUR-N9 감광막을 형성하여 프레임영역과 테스트패턴영역은 스테퍼를 이용하여 노광하고, 셀과 주변영역은 E-beam을 이용하여 노광한 후 현상함으로서 DUV 스테퍼의 해상력 한계와 E-beam의 쓰루-풋 현상을 동시에 해결할 수 반도체 소자의 감광막 형성방법을 제공하는 데 그 목적이 있다.Accordingly, the present invention is to solve the above-mentioned problems, and in the lithography process, a TDUR-N9 photosensitive film is formed in response to an ultraviolet (DUV) stepper and an electron beam (E-beam), so that the frame region and the test pattern region use steppers. It is to provide a method of forming a photosensitive film of a semiconductor device which can solve the limitation of the resolution of the DUV stepper and the through-foot phenomenon of the E-beam by exposing and developing the cell and the peripheral area after the exposure using the E-beam. have.

도 1 은 본 발명에 따라 E-beam과 DUV의 스테퍼를 매칭한 도면1 is a diagram matching the stepper of the E-beam and DUV according to the present invention

< 도면의 주요부분에 대한 부호의 설명><Description of reference numerals for main parts of the drawings>

10 : 프레임영역 20 : 테스트패턴영역10: frame area 20: test pattern area

30 : 셀 및 주변회로영역30: cell and peripheral circuit area

상기 목적을 달성하기 위해 본 발명에 따른 반도체 소자의 감광막 형성방법은In order to achieve the above object, a method of forming a photosensitive film of a semiconductor device according to the present invention

피식각층 상부에 원자외선과 전자빔에 반응하는 감광막을 도포하는 공정과,Applying a photoresist film on the etched layer to react with ultraviolet rays and electron beams;

프레임영역과 테스트패턴 영역의 상기 감광막은 스테퍼를 이용하여 노광하고 셀영역과 주변회로 영역의 상기 감광막은 전자빔을 이용하여 노광한 후 현상하는 공정을 포함하는 것을 특징으로 한다.And the photoresist film of the frame region and the test pattern region is exposed using a stepper, and the photoresist film of the cell region and the peripheral circuit region is exposed using an electron beam and then developed.

이하, 첨부된 도면을 참조하여 본 발명에 따른 반도체 소자의 감광막 형성방법에 대하여 상세히 설명을 하기로 한다.Hereinafter, a method of forming a photosensitive film of a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.

도 1 은 본 발명에 따라 E-beam과 DUV의 스테퍼를 매칭한 도면이다.1 is a view matching steppers of an E-beam and a DUV according to the present invention.

피식각층(도시 않됨) 상부에 TDUR-N9 감광막을 도포한 다음 0.2㎛ 이하의 패턴을 형성하는 전자빔(E-beam) 및 원자외선(DUV)의 스테퍼를 이용하여 프레임영역(10)과 테스트패턴영역(20), 셀 및 주변영역(30)을 노광 및 현상하게 된다.The frame region 10 and the test pattern region using a stepper of an E-beam and far ultraviolet rays (DUV) to form a pattern of 0.2 μm or less after applying a TDUR-N9 photoresist on the etched layer (not shown). The cell 20 and the peripheral region 30 are exposed and developed.

이 때, 상기 프레임영역(10)과 테스트패턴영역(20)은 원자외선(DUV) 스테퍼를 이용하여 노광하고, 셀영역 및 주변회로 영역(30)은 전자빔(E-beam)을 이용하여 노광한 다음 현상 공정을 진행한다.In this case, the frame region 10 and the test pattern region 20 are exposed by using an ultraviolet (DUV) stepper, and the cell region and the peripheral circuit region 30 are exposed by using an electron beam (E-beam). The development process is then carried out.

여기서, 상기 TDUR-N9 의 감광막은 피.브이.피(polyvinyphenol)로 이루어진 레진과 멜라민(melamine)으로 이루어진 바인더(binder), 피.에이.지(photo acid generator)의 3가지 물질로 구성되어 있다.Here, the photosensitive film of the TDUR-N9 is composed of three materials, a resin consisting of polyvinyphenol, a binder made of melamine, and a photo acid generator. .

이 때, 상기 E-beam으로 노광이 되면 입사된 전자에 의해 PAG로부터 나온 H+ 가 레진과 바인더를 결합시키며, 현상하게 되면 이 결합된 부분이 녹지않음으로써 다음과 같은 패턴을 형성하게 된다.At this time, when exposed to the E-beam H + from the PAG by the incident electrons combine the resin and the binder, and when developed, the combined portion is not melted to form the following pattern.

Figure pat00001
Figure pat00001

또한, 상기 E-beam 에 반응하는 I-line 감광막을 이용하여 E-beam과 I-line 스테퍼를 혼용하여 사용하며, 에너지원이 서로 다른 두가지 이상의 노광장비에 반응하는 감광막을 이용하여도 무방하다.In addition, by using the I-line photosensitive film reacting with the E-beam, a mixture of E-beam and I-line stepper may be used, and a photosensitive film reacting with two or more exposure devices having different energy sources may be used.

상기한 바와같이 본 발명에 따르면, 리소그래피 공정에 있어서 전자빔(E-beam)과 원자외선(DUV)에 반응하는 TDUR-N9 감광막을 이용하여 셀영역과 주변회로영역, 프레임영역, 테스트패턴영역을 노광하고 현상함으로서 원자외선의 해상력 한계와 전자빔(E-beam)의 쓰루-풋 현상을 동시에 해결할 수 있으며, 전자빔(E-beam) 감광막 보다 저가의 DUV 감광막을 이용함으로써 원가를 절감하는 이점이 있다.As described above, according to the present invention, in the lithography process, the cell region, the peripheral circuit region, the frame region, and the test pattern region are exposed by using a TDUR-N9 photosensitive film reacting with an electron beam (E-beam) and far ultraviolet (DUV). By developing and solving the limitation of far infrared rays and through-put of the electron beam (E-beam) at the same time, there is an advantage to reduce the cost by using a DUV photosensitive film of lower cost than the electron beam (E-beam) photosensitive film.

Claims (6)

피식각층 상부에 원자외선과 전자빔에 반응하는 감광막을 도포하는 공정과,Applying a photoresist film on the etched layer to react with ultraviolet rays and electron beams; 프레임영역과 테스트패턴 영역의 상기 감광막은 스테퍼를 이용하여 노광하고 셀영역과 주변회로 영역의 상기 감광막은 전자빔을 이용하여 노광한 후 현상하는 공정을 포함하는 것을 특징으로 하는 반도체 소자의 감광막 형성방법.And exposing the photoresist film in the frame region and the test pattern region using a stepper and exposing the photoresist film in the cell region and the peripheral circuit region using an electron beam and then developing the photoresist film. 제 1 항에 있어서,The method of claim 1, 상기 감광막은 TDUR-N9 감광막인 것을 특징으로 하는 반도체 소자의 감광막 형성방법.And the photosensitive film is a TDUR-N9 photosensitive film. 제 2 항에 있어서,The method of claim 2, 상기 TDUR-N9 감광막은 노광시The TDUR-N9 photosensitive film is exposed during exposure
Figure pat00002
Figure pat00002
 의 분자구조로 이루어진 패턴을 형성하는 것을 특징으로 하는 반도체 소자의 감광막 형성방법.The method for forming a photosensitive film of a semiconductor device, characterized in that to form a pattern consisting of a molecular structure of. 제 1 항에 있어서,The method of claim 1, 상기 전자빔은 E-beam인 것을 특징으로 하는 반도체 소자의 감광막 형성방법.The electron beam is an E-beam photosensitive film forming method of a semiconductor device. 제 4 항에 있어서,The method of claim 4, wherein 상기 E-beam에 반응하는 I-line 감광막을 이용하여 E-beam과 I-line 스테퍼를 혼용하는 것을 특징으로 하는 반도체 소자의 감광막 형성방법.Method for forming a photosensitive film of a semiconductor device, characterized in that for mixing the E-beam and I-line stepper by using the I-line photosensitive film reacting to the E-beam. 제 1 항에 있어서,The method of claim 1, 상기 감광막은 에너지원이 서로 다른 두가지 이상의 노광장비에 반응하는 감광막을 이용하는 것을 특징으로 하는 반도체 소자의 감광막 형성방법.The photosensitive film is a method for forming a photosensitive film of a semiconductor device, characterized in that for using the photosensitive film reacts to two or more exposure equipment different energy sources.
KR1019970030329A 1997-06-30 1997-06-30 Method for forming photoresist layer of semiconductor device using tdur-n9 photoresist layer KR100442968B1 (en)

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