KR100416794B1 - A cleaning compsite of the metal etcher and the method thereof - Google Patents
A cleaning compsite of the metal etcher and the method thereof Download PDFInfo
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- KR100416794B1 KR100416794B1 KR10-2001-0019654A KR20010019654A KR100416794B1 KR 100416794 B1 KR100416794 B1 KR 100416794B1 KR 20010019654 A KR20010019654 A KR 20010019654A KR 100416794 B1 KR100416794 B1 KR 100416794B1
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- cleaning
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- 238000004140 cleaning Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 20
- 239000002184 metal Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 19
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims abstract description 12
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims abstract description 11
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000811 xylitol Substances 0.000 claims abstract description 11
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims abstract description 11
- 229960002675 xylitol Drugs 0.000 claims abstract description 11
- 235000010447 xylitol Nutrition 0.000 claims abstract description 11
- 239000003599 detergent Substances 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 239000012459 cleaning agent Substances 0.000 abstract description 12
- 239000000126 substance Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 229960004592 isopropanol Drugs 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- -1 fluorine ions Chemical class 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- VGYYSIDKAKXZEE-UHFFFAOYSA-L hydroxylammonium sulfate Chemical compound O[NH3+].O[NH3+].[O-]S([O-])(=O)=O VGYYSIDKAKXZEE-UHFFFAOYSA-L 0.000 description 1
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/268—Carbohydrates or derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- C11D2111/22—
Abstract
본 발명은 금속 건식 에쳐의 부품 세정제에 관한 것으로, HF, NH4OH, CH3COOH, (NH3OH)2SO4, 자일리톨, 및 H2O를 포함하는 것을 특징으로 하는 금속 건식 에쳐 부품의 세정제 및 이를 사용하는 금속 건식 에쳐 부품의 세정 방법을 제공함으로써 세정시 작업자에 대한 안정성 확보 및 작업 효율성을 극대화시키고, ESC 쳐크(chuck)의 웨이퍼에 대한 어택을 최소화시키고, 세정제의 수급을 안정시킬 수 있으며 화학 물질이 웨이퍼 상에 잔류하는 것을 방지할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a component cleaner for metal dry archer, comprising: HF, NH 4 OH, CH 3 COOH, (NH 3 OH) 2 SO 4 , xylitol, and H 2 O. By providing a cleaning agent and a method of cleaning metal dry-etcher parts using the same, it is possible to secure worker stability and maximize work efficiency during cleaning, minimize attack of wafers of the ESC chuck, and stabilize supply and demand of the cleaning agent. And prevent chemicals from remaining on the wafer.
Description
[산업상 이용분야][Industrial use]
본 발명은 금속 건식 에쳐 부품의 세정제 및 세정 방법에 관한 것으로서, 더욱 상세하게는 반도체용 금속 건식 에쳐 ESC 쳐크(chuck)를 세정하는 금속 건식 에쳐 부품 세정제 및 이를 사용하는 금속 건식 에쳐 부품의 세정 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a cleaning agent and a cleaning method for a metal dry etcher component. It is about.
[종래 기술][Prior art]
반도체용 금속 건식 에쳐 ESC 부품은 일반적으로 알루미늄과 폴리이마이드(polyimide) 또는 세라믹 재질로 이루어져 있다. 반도체용 금속 건식 에쳐 ESC 부품은 반도체 제조시 많은 유기 폴리머(포토 레지스트 포함) 및 금속을 증착하고 식각 또는 애슁 공정 등을 통하여 폴리머 등 불순물이 다량 발생하여 상기 부품의 표면 등에 잔류하게 된다. 이러한 불순물 등은 반도체 생산에 불량을 유발하고 있으므로 이를 제거하여야 한다.Metal dry-etcher ESC components for semiconductors are typically made of aluminum, polyimide or ceramic materials. Metal dry-etched ESC parts for semiconductors deposit many organic polymers (including photoresist) and metals during semiconductor manufacturing, and a large amount of impurities such as polymers are generated and remain on the surface of the parts through etching or ashing processes. Such impurities, etc., cause defects in semiconductor production and should be removed.
현재까지 이러한 불순물을 제거하는 방법으로는 이소프로필알콜(isopropylalcohol; IPA) 또는 탈이온수(deionized water; DIW)를 와이퍼(wiper)에 묻혀서 직접 물리적인 힘으로 상기 불순물을 세정하였다.Until now, as a method of removing such impurities, isopropylalcohol (IPA) or deionized water (DIW) was buried in a wiper, and the impurities were directly washed by physical force.
그러나, 상기 방법으로는 상기 부품 표면에 잔류하는 폴리머 등의 불순물 제거 효율이 낮고, 또한 와이핑 때문에 상기 부품 표면에 와이핑시 물리적인 손상 및 스크래치 다발이 다량 발생하고 있다는 문제점이 있다.However, the above method has a problem that the removal efficiency of impurities such as a polymer remaining on the surface of the component is low, and due to wiping, a large amount of physical damage and scratches are generated when wiping the surface of the component.
본 발명은 위에서 설명한 바와 같은 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 작업자에 대한 안정성 확보 및 작업 효율성을 극대화시키고 ESC 쳐크(chuck)의 웨이퍼에 대한 어택을 최소화하고 수급의 안정성 확보 및 화학 물질의 잔류 가능성이 없는 금속 건식 에쳐 부품의 세정제 및 세정 방법을 제공하는 것이다.The present invention has been made to solve the problems as described above, the object of the present invention is to ensure the stability of the operator and to maximize the work efficiency, to minimize the attack on the wafer of the ESC chuck (chuck) and to secure supply and demand stability and It is to provide a cleaning agent and a method for cleaning metal dry-etcher parts with no possibility of remaining of chemicals.
도 1a 및 도 1b는 본 발명의 세정제 조성물로 일실시예에 따라 ESC 쳐크(chuck)를 세정한 결과를 나타낸 사진이다.1A and 1B are photographs showing the results of cleaning an ESC chuck according to one embodiment with the cleaning composition of the present invention.
도 2a 및 도 2b는 본 발명의 세정제 조성물로 다른 일실시예에 따라 ESC 쳐크(chuck)를 세정한 결과를 나타낸 사진이다.2A and 2B are photographs showing the results of cleaning an ESC chuck according to another embodiment with the cleaning composition of the present invention.
도 3a 및 도 3b는 종래 기술에 따라 ESC 쳐크(chuck)를 세정한 결과를 나타낸 사진이다.3A and 3B are photographs showing the results of cleaning the ESC chuck according to the prior art.
도 4a 및 도 4b는 또 다른 종래 기술에 따라 ESC 쳐크(chuck)를 세정한 결과를 나타낸 사진이다.4A and 4B are photographs showing the results of cleaning an ESC chuck according to another conventional technique.
본 발명은 상기한 목적을 달성하기 위하여, 본 발명은The present invention to achieve the above object, the present invention
HF, NH4OH, CH3COOH, (NH3OH)2SO4, 자일리톨, 및 H2O를 포함하는 것을 특징으로 하는 금속 건식 에쳐 부품의 세정제를 제공한다.A cleaner for metal dry etching parts comprising HF, NH 4 OH, CH 3 COOH, (NH 3 OH) 2 SO 4 , xylitol, and H 2 O.
또한, 본 발명은 상기 세정제를 사용하는 것을 특징으로 하는 금속 건식 에쳐 부품의 세정 방법을 제공한다.The present invention also provides a method for cleaning a metal dry etcher component, characterized in that the cleaning agent is used.
이하, 본 발명을 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명은 금속 건식 에쳐 ESC 쳐크(chuck)의 사용에 따라 오염된 폴리머 제거를 효과적으로 제거하기 위한 방법이다.The present invention is a method for effectively removing contaminated polymer removal following the use of a metal dry etch ESC chuck.
오염된 폴리머는 웨이퍼에 역오염이 되어 여러 가지 공정 불량을 야기한다.Contaminated polymers can contaminate the wafer and cause various process failures.
기존의 클리닝 방법은 와이퍼나 수세미 등을 이용해 닦음으로 스크래치에 의한 역오염으로 인한 공정 불량, 작업의 비효율성 등의 부작용이 있었다.Existing cleaning methods include wiping or scouring pads, and have side effects such as process defects and inefficiency due to back contamination by scratching.
본 발명은 이러한 문제를 해결하고자 물리적 힘을 최소화하여 스크래치 등의 역오염을 억제시킨다.In order to solve this problem, the present invention minimizes physical forces to suppress back contamination such as scratches.
기존 방법과 비교한 결과 본 발명의 세척 방법은 단시간내 클리닝하고 스크래치에 있어 자유로운 결과를 보인다.Compared with the conventional method, the cleaning method of the present invention shows free results in cleaning and scratching in a short time.
본 발명은 클리닝 개발이며, 불소 이온을 이용한 폴리머 제거이며, 여러 가 지 활성화 역할(activation)과 완충 역할(buffering)을 할 수 있는 자일리톨, 아세트산 등을 첨가시키고, 팽윤제(swelling agent)를 이용하여 이물질을 제거하는 메카니즘으로 세정한다.The present invention is a cleaning development, the removal of polymer using fluorine ions, the addition of xylitol, acetic acid, etc., which can play various activation and buffering roles, and by using a swelling agent Clean with a mechanism to remove debris.
본 발명에서는 HF, NH4OH, CH3COOH, (NH3OH)2SO4, 자일리톨, 및 H2O를 포함하는 것을 특징으로 하는 금속 건식 에쳐 부품의 세정제 조성물을 제공한다.The present invention provides a cleaning composition for metal dry etching parts comprising HF, NH 4 OH, CH 3 COOH, (NH 3 OH) 2 SO 4 , xylitol, and H 2 O.
상기 세정제 조성물 중 HF는 불소 이온을 이용하여 웨이퍼 상에 부착된 폴리머를 제거하는 것이며, 사용량은 0.1 내지 0.2 부피%이며, 바람직하기로는 0.15 부피%이다.In the detergent composition, HF is used to remove the polymer deposited on the wafer by using fluorine ions, and the amount of HF is 0.1 to 0.2% by volume, preferably 0.15% by volume.
또한, 세정제의 활성화(activation) 역할을 하는 자일리톨을 포함하고, 여기에 pH 조절용 완충제(buffer agent)로 아세트산을 포함한다. 상기 자일리톨은 불산의 세정 작용시 폴리머의 제거력을 더욱 증대시키기 위해 사용하고 있으며, 그 사용량은 5 내지 10 부피%가 바람직하고, 더욱 바람직하기로는 7.4 부피%를 포함한다. 또한, 아세트산의 사용량은 5 내지 10 부피%가 바람직하고, 더욱 바람직하기로는 7.4 부피%를 사용한다.In addition, it includes xylitol, which serves as an activation of the cleaning agent, and includes acetic acid as a buffer agent for pH adjustment. The xylitol is used to further increase the removal power of the polymer during the washing action of hydrofluoric acid, the amount of the xylitol is preferably 5 to 10% by volume, more preferably 7.4% by volume. The amount of acetic acid used is preferably 5 to 10% by volume, and more preferably 7.4% by volume.
그리고, 팽윤제(swelling agent)로 하이드록실암모늄염(hydroxylammonium salt)을 사용하며, 상기 하이드록실암모늄염 중에서 바람직하기로는 하이드록실암모늄설페이트(hydroxylammonium sulfate; (NH3OH)2SO4)를 사용한다. 상기 하이드록실암모늄염의 사용량은 5 내지 10 부피%가 바람직하고, 더욱 바람직하기로는 7.4 부피%를 사용하는 것이 바람직하다.As a swelling agent, a hydroxylammonium salt is used, and among the hydroxylammonium salts, hydroxylammonium sulfate (NH 3 OH) 2 SO 4 ) is used. The amount of the hydroxylammonium salt is preferably 5 to 10% by volume, more preferably 7.4% by volume.
이 이외에도 암모늄하이드록사이드(NH4OH), 물을 사용할 수 있으며, 암모늄 하이드록사이드의 사용량은 2 내지 5 부피%가 바람직하고, 더욱 바람직하기로는3.65 부피%이며, 물의 사용량은 60 내지 80 부피%가 바람직하고, 더욱 바람직하기로는 74 부피%가 바람직하다.In addition to this, ammonium hydroxide (NH 4 OH) and water may be used. The amount of ammonium hydroxide is preferably 2 to 5% by volume, more preferably 3.65% by volume, and the amount of water is 60 to 80%. % Is preferred, and more preferably 74% by volume.
한편, 본 발명은 상기 조성과 같은 금속 건식 에쳐 부품의 세정제를 사용하여 세정하는 방법을 제공한다.On the other hand, the present invention provides a method of cleaning using a cleaning agent of a metal dry etching component as described above.
상기 조성의 세정제를 사용하는 경우, 세정시 온도는 실온 이상, 80 ℃ 이하의 온도에서 세정하는 것이 바람직하며, 세정 방법으로는 면봉에 세정제를 묻힌 후 닦아내거나 또는 세정제에 세정하고자 하는 대상물을 침지시키는 방법으로 행한다.In the case of using the cleaning agent of the above composition, it is preferable to clean the cleaning temperature at a temperature higher than room temperature and lower than 80 ° C. As a cleaning method, after wiping the cotton swab with the cleaning agent or wiping or immersing the object to be cleaned in the cleaning agent, It is done by the method.
세정 시간은 면봉으로 닦아내는 경우에는 3분 내지 5분 정도로 세정을 행하고, 세정제에 침지시키는 경우에는 15분 내지 25분 정도 행한다.In the case of wiping with a cotton swab, the cleaning time is performed in about 3 minutes to 5 minutes, and in the case of immersion in a cleaning agent, the cleaning time is performed in about 15 to 25 minutes.
이렇게 세정함으로써 기존에 비해 세정 시간 및 세정 온도가 개선될 수 있다.This cleaning can improve the cleaning time and the cleaning temperature compared to the conventional.
이하, 본 발명의 바람직한 실시예를 제시한다. 다만, 하기하는 실시예는 본 발명을 더욱 잘 이해하기 위하여 제공되는 것이고 본 발명이 하기하는 실시예에 한정되는 것은 아니다.Hereinafter, a preferred embodiment of the present invention. However, the following examples are provided to better understand the present invention and the present invention is not limited to the following examples.
실시예 1, 2 및 비교예 1 내지 13Examples 1 and 2 and Comparative Examples 1 to 13
하기하는 표 1에 기재된 성분으로 본 발명의 세정제 조성물을 제조하여 반도체 웨이퍼를 세정하였다.The cleaning composition of this invention was produced with the component of Table 1 below, and the semiconductor wafer was wash | cleaned.
(10 : 우수, 1 : 불량)(10: excellent, 1: bad)
상기 조성으로 반도체 웨이퍼의 금속 건식 에쳐 부품을 세정한 결과, 종래 세정 방법에 따라 세정된 반도체 부품의 표면을 나타내는 사진인 도 3a, 도 3b 및 도 4a, 도 4b와 본 발명에 따라 세정된 반도체 부품의 표면을 나타내는 사진인 도 1a, 도 1b 및 도 2a, 도 2b를 비교하면, 본 발명에 따른 세정제 조성물로 금속 건식 에쳐 부품을 세정한 결과 기존의 클리닝법인 와이퍼나 수세미 등을 이용하여 닦음으로써 스크래치에 의한 역오염 등이 억제된다.As a result of cleaning the metal dry-etched part of the semiconductor wafer with the above composition, the semiconductor parts cleaned according to the present invention are shown in FIGS. 3A, 3B and 4A, 4B and FIG. 1A, 1B and 2A, 2B, which are photographs showing the surface of the metal, the metal dry-etched parts are cleaned with the cleaning composition according to the present invention. Inverse contamination by this is suppressed.
이상과 같이, 세정제가 웨이퍼 상에 잔류할 가능성이 없으며, ESC 쳐크에 대한 화학 물질의 어택을 최소화시킬 수 있으며 세정시 작업자에 대한 안정성 확보 및 작업 효율성이 극대화된다는 효과가 나타난다.As described above, there is no possibility that the cleaning agent remains on the wafer, the attack of the chemicals to the ESC chuck can be minimized, and the stability of the worker and the working efficiency are maximized during the cleaning.
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| KR101878123B1 (en) * | 2018-03-27 | 2018-07-13 | 곽도혁 | Cleaning liquid for wafer chuck table and chemical cleaning method of wafer chuck table using the same |
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| KR19980018433A (en) * | 1996-08-09 | 1998-06-05 | 오오히라 아키라 | Cleaning solution for semiconductor device manufacturing and manufacturing method of semiconductor device using same |
| KR19980081293A (en) * | 1997-04-11 | 1998-11-25 | 오오히라아키라 | Semiconductor circuit cleaners and methods of manufacturing semiconductor circuits using the same |
| KR20000055067A (en) * | 1999-02-03 | 2000-09-05 | 윤종용 | Aqueous cleaning solution for removing contaminants from surface of integrated circuit substrate and cleaning method using thereof |
| KR20010024240A (en) * | 1997-09-23 | 2001-03-26 | 스티븐티.워쇼 | Process for removing residues from a semiconductor substrate |
| KR100305314B1 (en) * | 1996-10-11 | 2001-11-30 | 말린크로드 베이크, 인크 | Microelectronics Wafer Material Surface Washing Method |
| KR20020044593A (en) * | 1999-11-15 | 2002-06-15 | 스티븐티.워쇼 | Non-corrosive cleaning composition for removing plasma etching residues |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980018433A (en) * | 1996-08-09 | 1998-06-05 | 오오히라 아키라 | Cleaning solution for semiconductor device manufacturing and manufacturing method of semiconductor device using same |
| KR100305314B1 (en) * | 1996-10-11 | 2001-11-30 | 말린크로드 베이크, 인크 | Microelectronics Wafer Material Surface Washing Method |
| KR19980081293A (en) * | 1997-04-11 | 1998-11-25 | 오오히라아키라 | Semiconductor circuit cleaners and methods of manufacturing semiconductor circuits using the same |
| KR20010024240A (en) * | 1997-09-23 | 2001-03-26 | 스티븐티.워쇼 | Process for removing residues from a semiconductor substrate |
| KR20000055067A (en) * | 1999-02-03 | 2000-09-05 | 윤종용 | Aqueous cleaning solution for removing contaminants from surface of integrated circuit substrate and cleaning method using thereof |
| KR20020044593A (en) * | 1999-11-15 | 2002-06-15 | 스티븐티.워쇼 | Non-corrosive cleaning composition for removing plasma etching residues |
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