KR100384477B1 - Liquid epoxy resin composition for semiconductor device package - Google Patents

Liquid epoxy resin composition for semiconductor device package Download PDF

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KR100384477B1
KR100384477B1 KR1019970071841A KR19970071841A KR100384477B1 KR 100384477 B1 KR100384477 B1 KR 100384477B1 KR 1019970071841 A KR1019970071841 A KR 1019970071841A KR 19970071841 A KR19970071841 A KR 19970071841A KR 100384477 B1 KR100384477 B1 KR 100384477B1
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epoxy resin
resin composition
flame retardant
weight
liquid epoxy
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KR19990052378A (en
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윤 곡 박
제 홍 유
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제일모직주식회사
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/08—Epoxidised polymerised polyenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K3/2279—Oxides; Hydroxides of metals of antimony
    • C08K2003/2282—Antimonates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/002—Physical properties
    • C08K2201/005—Additives being defined by their particle size in general
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/66—Substances characterised by their function in the composition
    • C08L2666/84—Flame-proofing or flame-retarding additives

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: A liquid epoxy resin composition for semiconductor device package is provided, to improve crack resistance and moldability by using inorganic fillers having different particle sizes. CONSTITUTION: The liquid epoxy resin composition comprises 15-30 wt% of an epoxy resin; 8-15 wt% of a curing agent; 5-20 wt% of a silica with an average particle size of 0.3 micrometers or less as an inorganic filler; 40-50 wt% of a silica with an average particle size of 1-45 micrometers as an inorganic filler; 1-3 wt% of a flame retardant; 1-3 wt% of an inorganic flame retardant; and 1-5.5 wt% of an additive. Preferably the epoxy resin is a naphthalene-based multifunctional liquid epoxy resin; the curing agent is a novolac phenol resin; the flame retardant is a brominated epoxy resin; and the inorganic flame retardant is antimony trioxide.

Description

반도체소자 봉지용 액상 에폭시수지 조성물Liquid epoxy resin composition for semiconductor device encapsulation

본 발명은 반도체소자 봉지용 액상 에폭시수지 조성물에 관한 것으로, 보다 상세하게는 에폭시 조성물의 구성성분인 무기충진제의 입자크기를 조절하여 무기충진제의 함량을 증가시킴으로써 내크랙성 및 성형성이 우수한 반도체 소자 봉지용 액상 에폭시수지 조성물에 관한 것이다.The present invention relates to a liquid epoxy resin composition for encapsulating a semiconductor device, and more particularly, to a semiconductor device having excellent crack resistance and moldability by increasing the content of the inorganic filler by controlling the particle size of the inorganic filler as a component of the epoxy composition. It relates to a liquid epoxy resin composition for sealing.

최근 반도체 제조기술의 발달로 칩의 크기는 점점 커짐에도 불구하고 반도체칩의 집적도가 급속하게 증가함과 아울러 반도체 실장방식이 핀삽입형에서 반도체 패키지의 소형화, 경량화가 가능한 표면 실장방식으로 변화되고 있으며, 특히 패키지로서 COB(CHIP ON BOARD), CSP(CHIP SIZE PACKAGE), TAB(TAPE AUTOMATED BONDING), BGA(BALL GRID ARRAY) 패키지가 많이 개발되어 상품화 되고 있다.Despite the recent increase in the size of chips due to the development of semiconductor manufacturing technology, the degree of integration of semiconductor chips is rapidly increasing and the semiconductor mounting method is changing from a pin insertion type to a surface mounting method capable of miniaturizing and reducing the weight of a semiconductor package. In particular, COB (CHIP ON BOARD), CSP (CHIP SIZE PACKAGE), TAB (TAPE AUTOMATED BONDING), BGA (BALL GRID ARRAY) packages have been developed and commercialized.

그러나, 표면실장형 패키지 방식은 실장시 고온, 약 215 내지 260℃에서 땜납(Soldering)에 의한 패키지 크랙이 발생하는 문제점이 있어, 이에 따른 반도체 소자 봉지용 에폭시수지 조성물의 물성도 다양하게 요구되고 있는 실정이다.However, the surface mount package method has a problem in that package cracks are caused by soldering at a high temperature at about 215 ° C. to 260 ° C. at the time of mounting, and thus various physical properties of the epoxy resin composition for semiconductor device encapsulation are required. It is true.

따라서, 표면실장형의 패키지에 사용되면서 패키지 크랙을 방지할 수 있는 반도체 소자 봉지용 에폭시수지 조성물을 제조하기 위한 방법들이 개발되고 있다.Therefore, methods for manufacturing an epoxy resin composition for semiconductor device encapsulation that can be used in a surface mount package and prevent package cracks have been developed.

종래의 내열성을 향상시켜 크랙을 방지하기 위한 방법으로는 여러 가지의 것이 제안되고 있는데, 예를 들면 다기능 에폭시 수지 또는 내열성이 우수한 비스말레이미드를 사용하는 방법이 있으나, 유리전이 온도상승에 따른 내습성이 저하하는 문제점이 있어 효과적이지는 못하였다.Conventional methods for preventing cracks by improving heat resistance have been proposed. For example, a multifunctional epoxy resin or a method using bismaleimide having excellent heat resistance may be used. This deterioration problem was not effective.

또한, 일본국 특개평3-177450에서는 무기충진제의 입자크기 조절 및 입도분포를 조절하여 내열성을 향상시키는 방법을 제안하고 있으나, 집적도 증가에 따른 반도체칩의 축소로 반도체 리드(LEAD)사이의 간격도 축소되어 성형불량율이 현저하게 증가하는 문제점이 발생하였다.In addition, Japanese Patent Laid-Open No. 3-177450 proposes a method of improving heat resistance by controlling the particle size and particle size distribution of the inorganic filler, but the gap between the semiconductor leads due to the reduction of the semiconductor chip due to the increase in the degree of integration. There was a problem that the shrinkage rate is significantly increased by shrinking.

본 발명의 목적은 상기와 같은 종래의 문제점을 해결하기 위하여 안출된 것으로, 에폭시수지 조성물중 무기충진제의 함량 및 입자크기를 조절함으로써, 내크랙성 및 성형성이 우수한 반도체 소자 봉지용 액상 에폭시 수지 조성물을 제공하는 것이다.An object of the present invention is to solve the conventional problems as described above, by adjusting the content and particle size of the inorganic filler in the epoxy resin composition, liquid epoxy resin composition for sealing semiconductor devices excellent in crack resistance and moldability To provide.

즉, 본 발명은 에폭시 수지, 경화제, 경화촉진제, 무기충진제, 난연제, 및 첨가제로 이루어지는 에폭시 수지 조성물에 있어서, 상기 무기충진제로 실리카를 사용하되 입자크기가 0.3㎛이하인 것을 5 내지 20중량%, 1 내지 45㎛범위의 것을 40 내지 50중량%로 사용하는 것을 특징으로 하는 반도체 소자 봉지용 액상 에폭시수지 조성물에 관한 것이다.That is, the present invention is an epoxy resin composition consisting of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a flame retardant, and an additive, wherein silica is used as the inorganic filler, but the particle size is less than 0.3 ㎛ 5 to 20% by weight, 1 It relates to a liquid epoxy resin composition for semiconductor element encapsulation, characterized in that the use of 40 to 50% by weight in the range of 45 to 45㎛.

이하 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.

본 발명에서 사용되는 에폭시 수지 조성물은 에폭시 수지, 경화제, 경화촉진제, 무기충진제, 난연제 및 기타 첨가제로 구성되는 종래의 에폭시 수지 조성물의 구성이면 가능하고 특별히 본 발명을 위하여 한정되는 것은 아니다.The epoxy resin composition used in the present invention may be a constitution of a conventional epoxy resin composition composed of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a flame retardant, and other additives, and is not particularly limited for the present invention.

따라서, 일반적인 반도체 소자 봉지용 에폭시수지 조성물, 예를들면, 에폭시수지 15 내지 30중량%, 경화제 8 내지 15중량%, 경화촉진제 0.1 내지 1.0중량%, 무기충진제 30 내지 70중량%, 난연제 1 내지 3중량%, 무기난연제 1 내지 3중량%, 및 첨가제 1 내지 5.5중량% 등으로 조성된 것을 본 발명에 사용할 수 있다.Therefore, a general epoxy resin composition for encapsulating semiconductor devices, for example, 15 to 30% by weight epoxy resin, 8 to 15% by weight curing agent, 0.1 to 1.0% by weight curing accelerator, 30 to 70% by weight inorganic filler, flame retardant 1 to 3 A composition composed of weight%, inorganic flame retardant 1 to 3 weight%, additive 1 to 5.5 weight% and the like can be used in the present invention.

본 발명에서 사용되는 에폭시수지는 나프탈렌계 다기능 액상 에폭시수지, 고순도의 올소크레졸 노볼락형 에폭시수지, 비스페놀A형 액상 에폭시수지 등을 사용할 수 있고, 경화제는 고순도의 노볼락형 페놀수지, 산무수물 등을 사용할 수 있다.The epoxy resin used in the present invention may be a naphthalene-based multifunctional liquid epoxy resin, high purity allocresol novolac epoxy resin, bisphenol A liquid epoxy resin, etc., the curing agent is a high-purity novolac phenol resin, acid anhydride, etc. Can be used.

본 발명에서 무기충진제로는 고순도의 천연실리카, 합성실리카, 알루미나 등이 사용될 수 있으나, 종래의 조성물과는 달리 입자직경이 서로 상이한 것을 사용하는데, 보다 구체적으로는 입자크기 0.3㎛ 이하의 실리카를 5 내지 20중량% 사용하고, 1 내지 45㎛의 것을 40 내지 50중량% 사용함으로써 고내열화를 만족하여 내 크랙성과 성형성을 향상시킬 수 있게된다. 본 발명에서 실리카의 입자직경이 45㎛를 초과하는 경우에는 반도체 리드사이의 미세한 공간에 용이하게 침투될 수 없고, 충전비율이 저하되므로 내열성 및 내습성이 떨어지는 단점이 있다. 따라서, 사용되는 무기충진제의 함량 및 입자크기는 본 발명의 범위가 바람직하고 전제적인 평균 입자크기는 5㎛미만이 바람직하다.In the present invention, as the inorganic filler, high purity natural silica, synthetic silica, alumina, etc. may be used. Unlike conventional compositions, particles having different particle diameters may be used. More specifically, silica having a particle size of 0.3 μm or less may be used. By using from 20% by weight to 40% by weight of 1 to 45 µm, high heat resistance can be satisfied and crack resistance and formability can be improved. In the present invention, when the particle diameter of the silica exceeds 45 μm, it cannot be easily penetrated into the minute spaces between the semiconductor leads, and since the filling ratio is lowered, heat resistance and moisture resistance are inferior. Therefore, the content and particle size of the inorganic filler to be used is preferred in the scope of the present invention, the overall average particle size is less than 5㎛.

본 발명에서의 난연제로는 브롬으로 치환된 에폭시 수지 및 무기 난연제로는 삼산화안티몬(Sb2O3) 또는 사산화안티몬(Sb2O4) 등을 사용할 수 있고, 특별히 한정되는 것은 아니다.As the flame retardant in the present invention, an epoxy resin substituted with bromine and an inorganic flame retardant may be used antimony trioxide (Sb 2 O 3 ) or antimony tetraoxide (Sb 2 O 4 ), and the like.

또한, 본 발명의 범위를 벗어나지 않는한 일반적으로 첨가되는 이형제, 착색제, 결합제, 개질제, 경화촉진제 등을 첨가하는 것도 가능하다.In addition, it is also possible to add a release agent, colorant, binder, modifier, curing accelerator, and the like generally added without departing from the scope of the present invention.

본 발명의 반도체 소자 봉지용 액상 에폭시 수지 조성물은 상기와 같은 종래의 에폭시 수지 조성물에서 입자크기가 서로 상이한 실리카를 믹싱한 후 니딩(Kneading), 냉각, 크러쉬(Crush)공정 및 블랜딩 공정을 거치는 일반적인 제조방법에 의하여 제조될 수 있다.The liquid epoxy resin composition for encapsulating a semiconductor device of the present invention is manufactured in general through a kneading, cooling, crushing, and blending process after mixing silica having different particle sizes from the conventional epoxy resin composition as described above. It can be manufactured by the method.

이하 본 발명을 실시예를 들어 더욱 상세히 설명하고자 하나, 본 발명이 하기 실시예에 의하여 제한 되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by the following Examples.

실시예 1Example 1

에폭시수지 조성물중 에폭시수지를 나프탈렌계 다기능 액상 에폭시수지를 사용하고 가열이 가능한 3-롤밀을 사용하여 무기충진제를 입도별로 표 1과 같이 평량한 후 기타 첨가제를 균일하게 분산시키고 용융 혼합상태로 반응시키면서 최종 봉지재의 점도를 관리하여 액상 에폭시수지 조성물을 제조한다.Epoxy resin in the epoxy resin composition, naphthalene-based multi-functional liquid epoxy resin, using a 3-roll mill that can be heated to weigh the inorganic filler as shown in Table 1 by dispersing other additives uniformly and reacted in a melt mixed state The viscosity of the final encapsulant is controlled to prepare a liquid epoxy resin composition.

상기와 같이 제조된 액상 에폭시수지 조성물을 2장의 유리판사이의 간격을 100㎛로 유지하고 유리판의 온도를 80℃에서 20분간 유지된 상태에서 경화될 때 까지 액상 에폭시 조성물이 침투된 거리를 측정하여 내습성, 내열성용 시편을 175℃에서 금형을 이용하여 캐스팅 방법으로 시편을 제작한 다음 175℃의 오븐에서 6시간 후경화시키고 물성을 측정하여 표 1에 나타내었다.The distance between the liquid epoxy resin composition prepared as described above was measured by maintaining the distance between the two glass plates at 100 μm and curing the liquid epoxy composition until the glass plate was cured while being kept at 80 ° C. for 20 minutes. The wet and heat resistant specimens were prepared by casting using a mold at 175 ° C., and then cured after 6 hours in an oven at 175 ° C., and the physical properties thereof are shown in Table 1 below.

실시예 2Example 2

에폭시수지 조성물중 무기충진제 조성비율을 표 1과 같이 평량하여 실시예 1과 동일한 방법으로 실시한 후 물성을 측정하여 표 1에 나타내었다.Inorganic filler composition ratio in the epoxy resin composition was carried out in the same manner as in Example 1 to the basis weight as shown in Table 1 and measured in the physical properties are shown in Table 1.

실시예 3Example 3

에폭시수지 조성물중 무기충진제 조성비율을 표 1과 같이 평량하여 실시예 1과 동일한 방법으로 실시한 후 물성을 평가하여 표 1에 나타내었다.Inorganic filler composition ratio in the epoxy resin composition was carried out in the same manner as in Example 1 to the basis weight as shown in Table 1 to evaluate the physical properties are shown in Table 1.

비교예 1Comparative Example 1

에폭시수지 조성물증 무기충진제 조성비율을 표 1과 같이 평량하여 실시예 1과 동일한 방법으로 실시한 후 물성을 평가하여 표 1에 나타내었다.Epoxy resin composition additive inorganic filler composition ratio was carried out in the same manner as in Example 1 to the basis weight as shown in Table 1 to evaluate the physical properties are shown in Table 1.

비교예 2Comparative Example 2

에폭시수지 조성물중 무기충진제 조성비율을 표 1과 같이 평량하여 실시예 1과 동일한 방법으로 실시한 후 물성을 평가하여 표 1에 나타내었다.Inorganic filler composition ratio in the epoxy resin composition was carried out in the same manner as in Example 1 to the basis weight as shown in Table 1 to evaluate the physical properties are shown in Table 1.

Figure pat00002
Figure pat00002

주) 1) 나프탈렌계 다기능성 액상 에폭시 수지Note 1) Naphthalene multifunctional liquid epoxy resin

2) 브롬화 비스페놀형 에폭시 수지2) Brominated Bisphenol Type Epoxy Resin

3) 노볼락형페놀수지3) Novolac Phenolic Resin

4) 삼산화안티몬4) antimony trioxide

5) 실리콘 오일5) silicone oil

6) 이미다졸 화합물6) imidazole compounds

물성평가방법Property evaluation method

(1)침투거리(1) penetration

액상 에폭시수지 조성물을 2장의 유리판사이의 간격을 100㎛로 유지하고, 유리판의 온도를 80℃에서 20분간 유지한 상태에서 침투된 거리를 측정한다.The distance between two glass plates of the liquid epoxy resin composition was maintained at 100 µm, and the distance penetrated while keeping the temperature of the glass plate at 80 ° C. for 20 minutes was measured.

(2)내습성(2) moisture resistance

가열된 금형(온도=175℃, 경화시간=120sec)에서 내습성 평가용 시편을 캐스팅방식으로 시편(가로=4cm, 세로=2cm, 두께=0.4cm)을 제작한 후 175℃의 오븐에서 6시간 후경화시킨 다음 가열/가압 포화수증기조(121℃, 2기압)에서 24시간 방치하여 시편에 흡수된 수분의 양을 측정한다.After casting the specimen for evaluation of moisture resistance in the heated mold (temperature = 175 ℃, curing time = 120sec), the specimen (width = 4cm, length = 2cm, thickness = 0.4cm) was produced and then 6 hours in an oven at 175 ℃. After curing after curing, the mixture was left for 24 hours in a heated / pressurized saturated steam bath (121 ° C., 2 atm) to measure the amount of moisture absorbed by the specimen.

(3)내크랙성(3) Crack resistance

TAB(칩사이즈 16㎜×2㎜, 30리드)패키지를 캐스팅방법으로 봉지하여 금형온도 175℃로 성형한 다음 175℃의 오븐에서 6시간 후경화시킨 후 가열/가압 포화수증기조(121℃, 2기압)에서 24시간 방치하여 시편에 수분을 흡수시킨 다음 열충격시험기(온도 사이클 테스터 -65℃×15분, 150℃×15분)를 이용하여 200사이클후 패키지 크랙을 측정하여 표 1에 나타내었다.TAB (chip size 16㎜ × 2㎜, 30lead) package was sealed and molded at mold temperature of 175 ℃, then cured in oven at 175 ℃ for 6 hours, then heated / pressurized steam tank (121 ℃, 2) After standing for 24 hours at atmospheric pressure to absorb moisture in the specimen, the package cracks were measured after 200 cycles using a thermal shock tester (temperature cycle tester -65 ° C. × 15 minutes, 150 ° C. × 15 minutes).

(4)성형성 평가(4) Formation evaluation

TAB(칩사이즈 16mm×2mm, 30리드)패키지를 캐스팅방법으로 봉지하여 온도 175℃, 경화시간 120sec의 금형조건으로 시편을 30개씩 조립하여 패키지 표면의 성형불량을 평가하였다.TAB (chip size 16mm × 2mm, 30 lead) packages were sealed by casting, and 30 pieces of the specimens were assembled under mold conditions with a temperature of 175 ° C. and a curing time of 120 sec.

이상에서 살펴본 바와 같이 입자크기가 서로 상이하고 일정크기 이하의 무기충진제를 사용한 에폭시 수지 조성물을 반도체 소자에 적용함으로써 내크랙성이 우수하고 성형성이 우수한 효과를 얻을 수 있게 된다.As described above, by applying an epoxy resin composition having an inorganic filler having a particle size different from each other and having a predetermined size or less to a semiconductor device, an effect excellent in crack resistance and moldability can be obtained.

Claims (3)

에폭시 수지, 경화제, 경화촉진제, 무기충진제, 난연제, 및 첨가제로 이루어지는 에폭시 수지 조성물에 있어서, 상기 무기충진제로 실리카를 사용하되 입자크기가 0.3㎛이하인 것을 5 내지 20중량%, 1 내지 45㎛범위의 것을 40 내지 50중량% 사용하는 것을 특징으로 하는 반도체 소자 봉지용 액상 에폭시수지 조성물.In the epoxy resin composition consisting of an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, a flame retardant, and an additive, silica is used as the inorganic filler, but the particle size is in the range of 5 to 20% by weight and 1 to 45 μm. A liquid epoxy resin composition for semiconductor element encapsulation, characterized by using 40 to 50% by weight. 제 1항에 있어서,The method of claim 1, 에폭시수지 15 내지 30중량%,15-30% by weight of epoxy resin, 경화제 8 내지 15중량%,8-15% by weight of curing agent, 평균입자크기 0.3㎛ 이하의 실리카 5 내지 20중량%,5 to 20% by weight of silica having an average particle size of 0.3 μm or less, 평균입자크기 1 내지 45㎛의 실리카 40 내지 50중량%,40-50% by weight of silica having an average particle size of 1-45 μm, 난연제 1 내지 3중량%,1 to 3% by weight of flame retardant, 무기난연제 1 내지 3중량%, 및1 to 3 weight percent of an inorganic flame retardant, and 첨가제 1 내지 5.5중량%Additive 1 to 5.5 wt% 로 이루어진 것을 특징으로 하는 반도체 소자 봉지용 액상 에폭시수지 조성물.Liquid epoxy resin composition for sealing a semiconductor device, characterized in that consisting of. 제 2항에 있어서, 에폭시 수지로서 나프탈렌계 다기능 액상 에폭시수지를 사용하고, 경화제로서 노볼락형페놀수지를 사용하며, 난연제로는 브롬화 에폭시수지를 사용하고, 무기난연제로는 삼산화 안티몬을 사용하는 것을 특징으로 하는 반도체 소자 봉지용 액상 애폭시 수지조성물.The method of claim 2, wherein a naphthalene-based multifunctional liquid epoxy resin is used as the epoxy resin, a novolak-type phenolic resin is used as the curing agent, a brominated epoxy resin is used as the flame retardant, and antimony trioxide is used as the inorganic flame retardant. A liquid epoxy resin composition for sealing semiconductor elements.
KR1019970071841A 1997-12-22 1997-12-22 Liquid epoxy resin composition for semiconductor device package KR100384477B1 (en)

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