KR100347540B1 - Method of eching an aluminium metal film - Google Patents
Method of eching an aluminium metal film Download PDFInfo
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- KR100347540B1 KR100347540B1 KR1019990060568A KR19990060568A KR100347540B1 KR 100347540 B1 KR100347540 B1 KR 100347540B1 KR 1019990060568 A KR1019990060568 A KR 1019990060568A KR 19990060568 A KR19990060568 A KR 19990060568A KR 100347540 B1 KR100347540 B1 KR 100347540B1
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- metal film
- aluminum metal
- etching
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910052782 aluminium Inorganic materials 0.000 title abstract description 4
- 229910052751 metal Inorganic materials 0.000 title description 8
- 239000002184 metal Substances 0.000 title description 8
- 239000004411 aluminium Substances 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract description 39
- 239000000460 chlorine Substances 0.000 claims abstract description 23
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 19
- 238000009832 plasma treatment Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 230000000007 visual effect Effects 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 13
- 238000005260 corrosion Methods 0.000 abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 241000283707 Capra Species 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32138—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 알루미늄 금속막 식각 방법에 관한 것으로, 염소를 이용하여 알루미늄 금속막을 식각하고 남은 잔유물에 의해 알루미늄 막이 부식되는 것을 막기위하여 H2O 플라즈마 처리로 염소를 제거하므로써 알루미늄 금속막의 부식을 억제할 수 있는 알루미늄 금속막 식각 방법에 관한 것이다.The present invention relates to an aluminum metal film etching method, and to prevent corrosion of the aluminum metal film by removing chlorine by H 2 O plasma treatment in order to prevent the aluminum film from being corroded by the residue remaining after etching the aluminum metal film using chlorine. The present invention relates to an aluminum metal film etching method.
Description
본 발명은 알루미늄 금속막 식각 방법에 관한 것으로, 염소를 이용하여 알루미늄 금속막을 식각하고 남은 잔유물에 의해 알루미늄 막이 부식되는 것을 막기위하여 H2O 플라즈마 처리 염소를 제거하므로써 알루미늄 금속막의 부식을 억제할 수 있는 알루미늄 금속막 식각 방법에 관한 것이다.The present invention relates to an aluminum metal film etching method, which can suppress corrosion of an aluminum metal film by removing H 2 O plasma treated chlorine to prevent the aluminum film from being corroded by the residue remaining after etching the aluminum metal film using chlorine. It relates to an aluminum metal film etching method.
반도체 소자에서, 특히 비메모리 반도체 제조공정에는 하나의 칩속에 회로를 집적하는 것이기 때문에 다층배선을 형성해야 한다. 그런데 기술이 하프 마이크론(Half Micron) 이하로 작아지면서 이러한 다층배선 형성기술이 대단히 어려워져 대부분의 디바이스 수율이 이 다층배선 형성시 좌우되고 있다. 다층 배선 형성 기술에서 특히 중요한 공정이 금속 막 식각 공정이다.In semiconductor devices, particularly in the non-memory semiconductor manufacturing process, since a circuit is integrated into one chip, multilayer wiring must be formed. However, as the technology becomes smaller than half micron, such a multilayer wiring forming technology becomes very difficult, and the yield of most devices depends on the formation of the multilayer wiring. A particularly important process in the multilayer wiring formation technique is the metal film etching process.
도 1 에 도시한 바와 같이, 이 금속 막 식각공정에서 큰 문제가 되는 것 중 하나는 알루미늄 금속막을 플라즈마 건식 식각할 때 사용되는 염소가 식각후에도 계속 잔류하게 된다. 이 잔류염소는 대기에 존재하는 수소와 반응하여 염산을 형성하므로써 알루미늄 금속막을 부식시킨다. 이러한 부식현상은 금속 배선간 단선(Short fail)을 발생시킴으로써 디바이스의 오동작을 발생시켜 불량이 발생한다. 이렇듯, 금속막의 부식을 방지시키는 기술은 금속막 식각공정에서 대단히 중요한 기술중 하나이다.As shown in FIG. 1, one of the major problems in this metal film etching process is that chlorine used for plasma dry etching of the aluminum metal film continues to remain even after etching. This residual chlorine reacts with hydrogen present in the atmosphere to form hydrochloric acid, thereby corroding the aluminum metal film. This corrosion phenomenon causes short circuits between metal wires, which causes malfunction of the device, resulting in defects. As such, the technique of preventing corrosion of the metal film is one of the very important technologies in the metal film etching process.
이러한 부식현상을 방지하기 위해 종래에는 식각후 순수조(DI-Water Bath)에 담궈 잔류하는 염소를 녹여 제거하므로써 알루미늄 금속막 부식을 방지한다. 알루미늄 금속막 식각후 레지스트 스트립 챔버(Strip chamber)가 없는 경우는 수분내에 순수조에 담궈 잔류 염소를 제거하여 부식을 방지한다. 또한 스트립 챔버가 있는경우에는 스트립 챔버에서 보호막 공정(Passivation)을 거쳐 부식을 방지한다. 그러나 이러한 방법을 사용할 경우 몇가지 문제점들이 발견되고 있다. 우선 전자의 경우에 있어서 항상 금속막 식각을 하자마자 순수조에 담궈야 하기 때문에 순수조가 항상 대기상태에 있어야 한다. 즉 순수조는 금속막 식각장비 대수만큼 있어야 하므로 장비대수와 공간측면에서 효율적이지 못하여 반도체 공정의 가격측면에서 경쟁력이 떨어지는 결과를 초래한다. 또한 보호막 공정을 할 경우, 스트립 챔버는 식각챔버의 갯수만큼 있어야 효율적인 공정을 할 수 있다. 그러나 이러한 것도 가격측면에서 볼 때 스트립 챔버의 가격이 비싸고 제조 공간도 넓어져야 한다. 그리고 식각장비에 있는 스트립 챔버는 주로 보호막 공정에 적합하도록 설계되어 있기 때문에 잔류 레지스트가 남는 현상을 볼 수 있어 또다시 제거 전용장비에서 레지스트 제거공정을 해야한는 문제점이 있다.In order to prevent such corrosion phenomenon, it is conventionally immersed in a DI-Water Bath after etching to dissolve and remove residual chlorine to prevent corrosion of the aluminum metal film. If there is no resist strip chamber after etching the aluminum metal film, it is immersed in a pure water bath in a few minutes to remove residual chlorine to prevent corrosion. In addition, if there is a strip chamber, the strip chamber is passivated to prevent corrosion. However, some problems are found when using this method. First, in the former case, the pure water bath must always be in the standby state because the metal film must be immersed in the pure water tank immediately after etching. That is, since the pure water tank must be as large as the number of metal film etching equipment, it is not efficient in terms of equipment and space, resulting in inferior competitiveness in the price of semiconductor process. In addition, in the case of the protective film process, the strip chamber must be as many as the number of etching chambers for efficient processing. However, in terms of price, however, the strip chamber is expensive and manufacturing space must be increased. In addition, since the strip chamber in the etching equipment is mainly designed to be suitable for the protective film process, the residual resist may be seen, and thus, there is a problem in that the resist removal process should be performed in the dedicated removal equipment.
따라서, 본 발명은 알루미늄 금속막 식각시 사용된 염소를 H2O 플라즈마 처리로 제거하므로써 알루미늄 금속막 식각 후 염소 잔류물을 완전 제거하여 알루미늄 금속막의 부식을 방지하여 디바이스의 단선 불량을 방지할 수 있는 알루미늄 금속막 식각방법을 제공하는 데 그 목적이 있다.Therefore, the present invention can remove the chlorine used in etching the aluminum metal film by H 2 O plasma treatment to completely remove the chlorine residues after etching the aluminum metal film to prevent corrosion of the aluminum metal film to prevent defective disconnection of the device. An object of the present invention is to provide an aluminum metal film etching method.
이러한 목적을 달성하기 위한 본 발명에 따른 알루미늄 금속막 식각방법은반도체 소자를 형서하기 위한 여러 요소가 형성된 기판상에 절연막을 형성하고, 상기 절연막 상에 알루미늄 금속막을 형성하는 단계; 상기 알루미늄 금속막 상에 포토레지스트 패턴을 형성한 후, 건식 식각공정으로 상기 알루미늄 금속막을 식각하는 단계; H2O 플라즈마 처리하여 상기 식각공정 후에 잔류하는 염소성분을 제거하는 단계; 및 상기 포토레지스트 패턴을 제거하는 단계를 포함하여 이루어지는 것을 특징으로 한다.According to an aspect of the present invention, there is provided an aluminum metal film etching method comprising: forming an insulating film on a substrate on which various elements for forming a semiconductor element are formed, and forming an aluminum metal film on the insulating film; Forming a photoresist pattern on the aluminum metal film, and then etching the aluminum metal film by a dry etching process; Removing the chlorine component remaining after the etching process by H 2 O plasma treatment; And removing the photoresist pattern.
도 1은 염소에 의한 알루미늄 금속막의 부식현상을 도시하는 그림이다.1 is a diagram showing the corrosion phenomenon of the aluminum metal film by chlorine.
도 2는 본 발명에 따른 알루미늄 금속막의 식각공정을 설명하기 위한 단면도이다.2 is a cross-sectional view for explaining an etching process of the aluminum metal film according to the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
10 : 기판 11 : 절연막10 substrate 11 insulating film
12 : 알루미늄 금속막 13 : 포토레지스트 패턴12 aluminum metal film 13 photoresist pattern
14 : 염소14: goat
이하에서는 본 발명에 따른 알루미늄 식각방법을 상세히 설명한다.Hereinafter, the aluminum etching method according to the present invention will be described in detail.
도 2에 도시한 바와 같이, 반도체 소자를 형성하기 위한 여러 요소가 형성된 기판(10)상에 절연막(11)을 형성한다. 이후, 절연막(11) 상부에 알루미늄 금속막(12)을 형성하고 포토레지스트 패턴(13)을 식각마스크로 이용하여 염소에 의해 알루미늄 금속막(12)을 건식식각한다. 알루미늄 금속막(12)을 식각한 후, 주변에 남아있는 염소성분(14)을 H2O 플라즈마 처리로 완전히 제거한다.As shown in FIG. 2, the insulating film 11 is formed on the board | substrate 10 in which the several elements for forming a semiconductor element were formed. Thereafter, the aluminum metal film 12 is formed on the insulating film 11, and the aluminum metal film 12 is dry-etched by chlorine using the photoresist pattern 13 as an etching mask. After etching the aluminum metal film 12, the chlorine component 14 remaining in the periphery is completely removed by H 2 O plasma treatment.
이하에서는 H2O 플라즈마 처리로 잔여 염소성분을 제거하는 과정을 자세히 설명한다.Hereinafter, a process of removing residual chlorine by H 2 O plasma treatment will be described in detail.
부식을 발생시키는 공정상의 문제점을 보완하기 위해 식각챔버에서 보호막을 형성하므로써 알루미늄 금속막의 부식을 방지하는 것이다. 즉 식각챔버에서 알루미늄 금속막 건식각후 식각 챔버에 증기 운송 시스템(Vapor Delivery System)을 설치하여 알루미늄 금속막을 식각하는 단계를 실시한 후에 물(H2O)를 증기화 한후 챔버에 공급하여 플라즈마(Plasma)를 발생시켜 잔류 염소를 제거하는 것이다. 이러한 기술은 장비의 무리를 감소시켜야 하기 때문에 다음과 같은 조건으로 실시하지 않으면 안된다. 이러한 조건을 Centura5200-DPSTM장비에서 실시하는 단계별로 설명하면 다음과 같다.In order to compensate for the process problems that cause corrosion, a protective film is formed in the etching chamber to prevent corrosion of the aluminum metal film. That is, after etching the aluminum metal film by installing a vapor delivery system in the etching chamber after etching the aluminum metal film in the etching chamber, the water (H 2 O) is vaporized and then supplied to the chamber by plasma (Plasma). ) To remove residual chlorine. Since this technique requires a reduction in equipment load, it must be carried out under the following conditions. The following describes the conditions in each step performed by Centura5200-DPS TM equipment.
제 1 단계는 알루미늄 금속막 식각 단계이다. 1100W의 소스 파워(Source Power) , 110W의 바이어스 파워(Bias Power), 10mTorr의 압력, 80sccm의 Cl2가스, 40sccm의 BCl3가스 및 10sccm의 N2가스 조건에서 주식각을 한다. 이 후에, 700W의 소스 파워(Source Power) , 100W의 바이어스 파워(Bias Power), 9mTorr의 압력, 70sccm의 Cl2가스, 50sccm의 BCl3가스 및 10sccm의 N2가스조건에서 과도식각을 실시한다.The first step is an aluminum metal film etching step. The stock angle is made at a source power of 1100 W, a bias power of 110 W, a pressure of 10 mTorr, a Cl 2 gas of 80 sccm, a BCl 3 gas of 40 sccm, and an N 2 gas of 10 sccm. Subsequently, transient etching is performed under conditions of 700 W of source power, 100 W of bias power, 9 mTorr of pressure, 70 sccm of Cl 2 gas, 50 sccm of BCl 3 gas, and 10 sccm of N 2 gas.
제 2 단계는 펌핑 단계(Pumping step)이다. 기본 압력(Base Pressure)으로 펌핑을 하여준다.The second step is a pumping step. Pump at the base pressure.
제 3 단계는 안정화 단계(Stabilise step)이다. 제 3 단계에서는 1.5 Torr의 압력 및 1000sccm의 H2O를 챔버에 공급하여 안정화 시킨다.The third step is the stabilization step. In the third step, a pressure of 1.5 Torr and 1000 sccm of H 2 O are supplied to the chamber to stabilize.
제 4 단계는 보호막 형성 단계(Passivation Step)이다. 안정화 단계를 거친후, 보호막 형성단계에서는 1000W의 소스파워를 챔버에 인가하여 H2O 플라즈마를 발생시켜 잔류염소를 제거한다.The fourth step is a passivation step. After the stabilization step, in the protective film forming step, 1000 W of source power is applied to the chamber to generate H 2 O plasma to remove residual chlorine.
제 5 단계는 제 2 단계와 같이 기본 압력(Base Pressure)으로 펌핑을 하여준다.In the fifth step, pumping is performed at the base pressure as in the second step.
상기 조건에서 보면 제 1 단계에 비해서 제 3 단계의 압력이 상당히 높은 것을 알 수가 있다. 이러한 압력 상승은 장비에 무리를 줄 수 있다. 이러한 것을 해결하기 위해서는 제 3 단계(안정화 단계)를 충분히 실시해 장비를 안정화 시켜주어야 한다.Under the above conditions, it can be seen that the pressure of the third stage is considerably higher than that of the first stage. This pressure rise can strain the equipment. To solve this problem, the third step (stabilization step) should be sufficiently performed to stabilize the equipment.
상술한 바와 같이, 알루미늄 금속막의 부식을 억제하기 위해 H2O 플라즈마 처리로 염소를 제거하는 공정은 챔버의 수를 줄여 제조공간을 줄일수 있고, 공정 단가를 줄일 수 있다.As described above, the process of removing chlorine by H 2 O plasma treatment to suppress the corrosion of the aluminum metal film can reduce the number of chambers, thereby reducing the manufacturing space and reducing the process cost.
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| KR101870491B1 (en) * | 2014-03-11 | 2018-06-22 | 도쿄엘렉트론가부시키가이샤 | Plasma processing appratus, substrate processing system, fabrication method of thin film transistor, and storage medium |
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