KR100342810B1 - Method of fabricating lead frame for semiconductor package and lead frame thereby - Google Patents

Method of fabricating lead frame for semiconductor package and lead frame thereby Download PDF

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Publication number
KR100342810B1
KR100342810B1 KR1019950061440A KR19950061440A KR100342810B1 KR 100342810 B1 KR100342810 B1 KR 100342810B1 KR 1019950061440 A KR1019950061440 A KR 1019950061440A KR 19950061440 A KR19950061440 A KR 19950061440A KR 100342810 B1 KR100342810 B1 KR 100342810B1
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South Korea
Prior art keywords
lead frame
semiconductor package
lead
residual stress
package
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KR1019950061440A
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Korean (ko)
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KR970053737A (en
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신원선
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앰코 테크놀로지 코리아 주식회사
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Priority to KR1019950061440A priority Critical patent/KR100342810B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads

Abstract

PURPOSE: A method of fabricating a lead frame for semiconductor package and a lead frame thereby are provided to remove the remaining stress from the lead frame by adding a tempering process to the lead frame fabrication process. CONSTITUTION: A lead frame fabrication process includes a stepping process for forming a shape of lead or a shape of semiconductor loading plate, a plating process for plating silver on a molding region, and a down-set process for lowering the height of the semiconductor loading plate. A tempering process is performed to remove the remaining stress from a read frame after any one process of the stepping process or the down-set process is performed. The tempering process is performed under the temperature of 500 to 900 degrees centigrade during 3 hours.

Description

반도체패키지용 리드프레임의 제조 방법 및 리드프레임Manufacturing method and lead frame of lead frame for semiconductor package

본 발명은 반도체패키지를 구성하는 리드프레임의 제조 방법 및 리드프레임에 관한 것으로, 특히, 리드프레임에 내재되어 있는 잔류 응력을 제거시킨 반도체패키지용 리드프레임의 제조 방법 및 그 리드프레임에 관한 것이다.The present invention relates to a method for manufacturing a lead frame constituting a semiconductor package and a lead frame, and more particularly, to a method for manufacturing a lead frame for a semiconductor package in which residual stresses inherent in the lead frame are removed, and a lead frame thereof.

일반적으로 여러가지 가공공정을 거쳐 완성되는 리드프레임(1)에는 가공시 받게 되는 외력의 영향으로 물리적 응력이 그대로 남아 있기 때문에 이러한 자재를 사용하여 반도체패키지를 제조하게 되면, 패키지의 성형 공정이나 기타 고온이 요구되는 공정에서 리드프레임이 변형되어 제품의 품질을 저하시키게 되는 등 제품 불량률을 증가시키는 요인이 되고 있다.In general, the lead frame 1, which is completed through various processing processes, remains intact under the influence of external forces during processing. Therefore, when manufacturing a semiconductor package using such materials, the molding process of the package or other high temperature In the required process, the lead frame is deformed and the quality of the product is deteriorated.

이에 본 발명에서는 리드프레임의 제조 공정중 또는 패키지 성형 공정중 열처리 공정(템퍼링(Tempering) 공정)을 추가함으로써 리드프레임 자체에 내재되어 있는 물리적인 잔류 응력을 풀어주어(제거시켜) 패키지의 크랙 테스트(Crack Test)나 실사용시에 발생하는 계면박리나, 크랙 현상을 제거시켜 불량률을 최소화함으로써 원가절감에 이바지하고 나아가 고품질의 반도체패키지 제품을 제공함에 그 목적이 있다.Therefore, in the present invention, by adding a heat treatment process (tempering process) during the lead frame manufacturing process or the package forming process, the physical residual stress inherent in the lead frame itself is released (removed), thereby cracking the package ( Its purpose is to provide high quality semiconductor package products by contributing to cost savings by minimizing defect rate by eliminating interfacial peeling or cracking phenomenon generated during crack test) or actual use.

이하, 본 발명을 첨부 예시 도면에 의거 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

제1도의 예시와 같은 구리(Cu)재로 만들어지는 리드프레임(1)은 그 제조 과정이 정밀하고 기계적인 수직압력을 많이 받아 가공 완료된 리드프레임 내부에는 물리적 응력인 스템핑(Stamping) 응력이 그대로 남이 있는 상태가 된다. 즉, 제2도의 제조 공정도에서 보듯이 롤(Roll) 상태로 감겨 있는 원자재를 일정길이로 절단하여 리드프레임 원판을 마련하게 되는데, 이때부터 리드프레임 원판에는 길이 방향의 코일셋(Coil Set) 응력이 발생된 상태이고, 이어서 스템핑 공정을 실시하여 정밍한 형상의 리드프레임(1)이 만들어지게 되는데 이때 리드프레임 전체에 스템핑 응력이 퍼져 있는 상태가 된다.The lead frame 1 made of copper (Cu) as shown in FIG. 1 has a precise and mechanical vertical pressure, so that the stamping stress, which is a physical stress, remains inside the finished lead frame. It is in a state. That is, as shown in the manufacturing process diagram of FIG. 2, the raw material wound in a roll state is cut to a predetermined length to provide a lead frame disc. From this time, the lead frame disc has a longitudinal coil set stress. It is a generated state, and then the stamping process is performed to produce a refined shape of the lead frame 1, at which time the stamping stress is spread throughout the lead frame.

그러므로 본 발명에서는 이러한 물리적인 잔류 응력을 풀어주기 위하여 스템핑 공정 다음에 템퍼링 공정(열처리 공정)을 두어 리드프레임에 내재된 잔류 응력을 완전히 풀어주도록 하는 방법을 채택하게 된 것이다. 즉, 스템핑 공정을 거친리드프레임(일반 리드프레임 또는 히트싱크 슬러그(Heat Sink Slug)가 부착된 리드프레임)을 노(盧)에 넣고, 산화방지분위기(N2분위기)에서 500~900℃로 30분에서 3시간 정도 가열하게 되면 구리재질의 리드프레임 조직이 와해되면서 리드프레임(1)은 응력이 제로(Zero)인 상태가 된다.Therefore, in the present invention, in order to solve the physical residual stress, a method of applying a tempering process (heat treatment process) after the stamping process to completely release the residual stress inherent in the lead frame. In other words, a lead frame (a normal lead frame or a lead frame with a heat sink slug attached) that has undergone a stamping process is placed in a furnace and heated to 500 to 900 ° C. in an antioxidant atmosphere (N 2 atmosphere). When heated for 30 minutes to 3 hours, the lead frame structure of the copper material is broken and the lead frame 1 is in a state of zero stress.

따라서, 이 이후에는 175℃의 몰딩 공정을 거치거나 솔더링 테이스시 실제 솔더링 공정(220℃ 이상의 온도조건)을 거치더라도 열적 응력으로 인한 변형은 일체 일어나지 않게 되므로 고품질의 반도체패키지 제조가 가능해지는 것이다.Therefore, even after the molding process of 175 ° C or the actual soldering process (temperature conditions of 220 ° C or more) during the soldering tasting, the deformation due to thermal stress does not occur at all, thereby enabling the manufacture of high-quality semiconductor packages.

또한, 본 발명에서는 리드프레임에 내재된 잔류 응력을 풀어주기 위한 방법으로 제4도의 예시와 같이 스템핑 공정 → 도금(Plating) 공정 → 다운셋(Down Set) 공정이 끝난 완성된 리드프레임(1)을 패키지 성형전에 템퍼링 공정을 두어 템퍼링 처리함으로써 리드프레임에 내재된 잔류 응력을 제거하는 방법도 가능한 것이다. 즉, 완성형 리드프레임(1)을 노에 넣어 산화방지 분위기에서 500~900℃로 30분~3시간 정도 가열하게 되면 구리재질의 리드프레임 조직이 와해되면서 리드프레임은 응력 제로(Zero) 상태가 되는 것이다.In addition, in the present invention, as a method for releasing the residual stress inherent in the lead frame, as shown in FIG. 4, the stamping process → plating process → down set process is completed. It is also possible to remove the residual stress inherent in the lead frame by tempering the substrate by forming a tempering process before package molding. That is, when the finished lead frame 1 is placed in a furnace and heated at 500 to 900 ° C. for 30 minutes to 3 hours in an anti-oxidation atmosphere, the lead frame structure of the copper material decomposes and the lead frame is in a zero stress state. will be.

또한, 본 발명에서는 리드프레임(1)이 몰드공정을 거치면서 몰드클램핑(Mold Clamping)에 의해 응력이 재발생한다는 사실에 착안하여 제5도의 예시와 같이 몰드 컴파운드를 완전 경화시켜주기 위한 포스트 몰드 큐어(Post Mold Cure; PMC) 공정을 분할하여 그 전후로 열처리 공정을 두어 몰드 클램핑시 발생한 잔류 응력을 제거시켜 주는 또 다른 응력 제거 방법을 제시한다.In addition, in the present invention, the lead frame 1 is a post-mold cure for completely curing the mold compound as shown in the example of FIG. 5, paying attention to the fact that the stress is regenerated by mold clamping during the mold process. Another method of stress removal is to remove the residual stress generated during mold clamping by dividing the Post Mold Cure (PMC) process and placing the heat treatment process before and after.

즉, 몰드 금형이 리드프레임을 클램핑하여 리드프레임을 상하로 눌러 주게 되면 몰드 금형에 의한 눌림 부위에서 약 0.5mil 정도의 덴트(Dent)가 발생되어 그 부분의 메탈(Metal) 물질이 좌우로 이동하면서 리드프레임에는 또다시 응력이 발생하여 남아 있게 되므로 이를 제거하려면 몰드 완료된 리드프레임을 6시간 동안 경화시켜 주는 과정인 PMC 공정의 전반부 또는 후반부에 약 150초 동안 산화방지 분위기에서 300~500℃로 열처리를 해주게 되면 몰드 컴파운드가 덜 경화된 상태이므로 리드프레임의 잔류 응력이 완전 제거될 수 있는 것이다.In other words, when the mold die clamps the lead frame and presses the lead frame up and down, about 0.5 mil of dent is generated at the pressed part by the mold mold, and the metal material of the portion moves from side to side. Since the lead frame is left with stress again, to remove it, heat treatment is performed at 300 ~ 500 ℃ in an anti-oxidation atmosphere for about 150 seconds in the first half or the second half of the PMC process. If the mold compound is hardened, the residual stress in the leadframe can be completely removed.

이와 같이, 본 발명에는 일반 리드프레임 또는 히트싱크 부착형 리드프레임의 제조공정중에 템퍼링 공정을 추가하여 리드프레임 제조 공정에서 생길 수 있는 리드프레임 자체에 내재된 잔류 응력을 완전히 제거시킬 수 있는 것이며, 또한 몰드 공정 이후의 PMC 공정중에 열처리 공정을 두어 몰드 금형의 클램핑시 리드프레임에 가해진 응력을 완전히 제거토록 함으로써 패키지 솔더링 테스트시나 실사용시에 패키지내에서 발생되는 계면박리나 크랙(깨짐) 현상을 미연에 방지할 수 있는 것이다.As such, in the present invention, by adding a tempering process during the manufacturing process of the lead frame or the heat sink type lead frame, the residual stress inherent in the lead frame itself may be completely eliminated. A heat treatment process is performed during the PMC process after the mold process to completely remove the stress applied to the lead frame during clamping of the mold mold, thereby preventing interfacial peeling or cracking occurring in the package during package soldering test or in actual use. You can do it.

제1도는 구리재 리드프레임의 형상도.1 is a shape diagram of a copper lead frame.

제2도는 일반 리드프레임의 제조 공정도.2 is a manufacturing process diagram of a general lead frame.

제3도는 본 발명의 리드프레임 제조 공정도.Figure 3 is a leadframe manufacturing process of the present invention.

제4도는 본 발명의 다른 실시예.4 is another embodiment of the present invention.

도5도는 본 발명의 또다른 실시예.5 is another embodiment of the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1; 리드프레임One; Leadframe

Claims (4)

리드프레임 원판을 천공하여 리드나 반도체칩 탑재판의 모형을 떠주는 스템핑 공정과 몰딩 영역에 은을 도포시켜 주는 도금 공정 및 반도체칩의 두께를 감안하여 반도체칩 탑재판을 리드 높이보다 다소 낮춰주는 다운셋 공정을 거쳐 완성형 리드프레임을 제조함에 있어서,In view of the stamping process that floats the lead frame disc and floats the model of the lead or semiconductor chip mounting plate, the plating process that applies silver to the molding area, and the thickness of the semiconductor chip, the semiconductor chip mounting plate is lower than the lead height. In manufacturing the finished lead frame through the downset process, 상기 스템핑 공정 또는 다운셋 공정중 어느 한 공정 후에 리드프레임(1)에 남아 있는 잔류 응력을 제거시켜 주기 위한 템퍼링 공정을 추가하여 리드프레임을 제조함을 특징으로 하는 반도체패키지용 리드프레임의 제조 방법.Method of manufacturing a lead frame for a semiconductor package characterized in that the lead frame is manufactured by adding a tempering process for removing residual stress remaining in the lead frame 1 after any one of the stamping process or the downset process. . 제1항에 있어서, 상기 스템핑 공정 또는 다운셋 공정후 산화방지분위기에서 500~900℃로 30분에서 3시간동안 가열하여 리드프레임의 잔류응력을 제거함을 특징으로 하는 반도체패키지용 리드프레임의 제조 방법.The method of claim 1, wherein after the stamping process or the downset process in the oxidation atmosphere is heated to 500 ~ 900 ℃ for 30 minutes at 3 minutes to remove the residual stress of the lead frame manufacturing of a lead package for a semiconductor package Way. 패키지 성형시, 몰드 공정 이후의 포스트 몰드 큐어(PMC) 공정중에 열처리 공정을 두어 리드프레임에 남아 있는 잔류 응력을 제거한 반도체패키지용 리드프레임.A lead frame for a semiconductor package in which the residual stress remaining in the lead frame is removed by a heat treatment process during a post mold curing (PMC) process after a mold process during package molding. 제3항에 있어서, 상기 포스트 몰드 큐어(PMC) 공정의 전반부에 열처리 공정을 두어 산화방지분위기에서 300~500℃로 가열하여 리드프레임의 잔류응력을 제거한 반도체패키지용 리드프레임.4. The semiconductor package leadframe according to claim 3, wherein a heat treatment is applied to the first half of the post-mold cure (PMC) process to remove the residual stress of the leadframe by heating to 300 to 500 캜 in an oxidation atmosphere.
KR1019950061440A 1995-12-28 1995-12-28 Method of fabricating lead frame for semiconductor package and lead frame thereby KR100342810B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101028108B1 (en) * 2009-02-11 2011-04-08 주식회사 엘티에스 apparatus for removing oxide layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101028108B1 (en) * 2009-02-11 2011-04-08 주식회사 엘티에스 apparatus for removing oxide layer

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