KR100302584B1 - Method for manufacturing tantalum oxide film - Google Patents

Method for manufacturing tantalum oxide film Download PDF

Info

Publication number
KR100302584B1
KR100302584B1 KR1019960063419A KR19960063419A KR100302584B1 KR 100302584 B1 KR100302584 B1 KR 100302584B1 KR 1019960063419 A KR1019960063419 A KR 1019960063419A KR 19960063419 A KR19960063419 A KR 19960063419A KR 100302584 B1 KR100302584 B1 KR 100302584B1
Authority
KR
South Korea
Prior art keywords
tantalum
reactor
tantalum oxide
gas
thin film
Prior art date
Application number
KR1019960063419A
Other languages
Korean (ko)
Other versions
KR19980045242A (en
Inventor
오제욱
김창렬
Original Assignee
김영환
현대반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김영환, 현대반도체 주식회사 filed Critical 김영환
Priority to KR1019960063419A priority Critical patent/KR100302584B1/en
Publication of KR19980045242A publication Critical patent/KR19980045242A/en
Application granted granted Critical
Publication of KR100302584B1 publication Critical patent/KR100302584B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: A fabrication method of a tantalum oxide(Ta2O5) film is provided to increase a growing speed of the tantalum oxide film by adding H2O gases. CONSTITUTION: The Ta2O5 film is fabricated by CVD(Chemical Vapor Deposition). A tantalum source(6a) and an oxygen gases are inflow in a CVD chamber(4) through a vaporizer(5), thereby forming the tantalum oxide film on a semiconductor substrate. At this time, in order to activate the chemical reaction of the tantalum source gas(6a) and the oxygen gas in the CVD chamber(4), H2O gases are further added into the CVD chamber(4). That is, a touch(9) for generating the H2O gases further includes in the CVD chamber.

Description

산화탄탈륨 박막 제조방법Tantalum oxide thin film manufacturing method

본 발명은 산화탄탈륨(Ta2O5) 박막 제조방법에 관한 것으로서 특히, 반도체 웨이퍼에 금속유기물 화학기상증착(MOCVD)방법으로 산화탄탈륨을 증착할 때 H2O기체를 첨가, 반응을 활성화시키도록 하여 산화탄탈륨의 증착속도를 향상시키도록 한 산화탄탈륨 박막 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a tantalum oxide (Ta 2 O 5 ) thin film, and more particularly, in order to activate a reaction by adding a H 2 O gas when depositing tantalum oxide on a metal organic chemical vapor deposition (MOCVD) method on a semiconductor wafer. The present invention relates to a method for manufacturing a tantalum oxide thin film to improve the deposition rate of tantalum oxide.

디램(DRAM) 등 고집적 반도체 소자의 캐패시터 유전막으로 사용하기 위해 산화탄탈륨 박막을 증착하게 되는데, 이는 탄탈륨소스와 산소를 반응기내로 유입시켜 웨이퍼의 표면에서 화학반응이 일어나 산화탄탈륨이 증착되도록 하는 방법에 이루어지며 이러한 방법은 제1도에 개략적으로 도시된 바와 같은 구성으로 된 장치에 의해 구현된다.A thin film of tantalum oxide is deposited for use as a capacitor dielectric film of a high-density semiconductor device, such as DRAM, in which a tantalum source and oxygen are introduced into a reactor to cause a chemical reaction on the surface of the wafer to deposit tantalum oxide. This method is implemented by an apparatus having a configuration as schematically shown in FIG.

도면상 최상측의 유량계(MFC)(1)를 통과하여 반응기(4)내로 유입되는 질소(N2) 가스는 화학기상증착 전후에 상기 반응기(4)의 내부를 씻어내는 퍼지(purge) 질소가스이며, 상측에서 두 번째의 유량계(2)를 통과하여 상기 반응기(4)내로 유입되는 산소(O2)가스는 탄탈륨을 산화시키는 산화제로서의 기능을 수행하는 것이다.Nitrogen (N2) gas flowing through the uppermost flow meter (MFC) 1 in the reactor 4 in the drawing is purge nitrogen gas which washes the inside of the reactor 4 before and after chemical vapor deposition. Oxygen (O2) gas flowing into the reactor 4 through the second flowmeter 2 from the upper side functions as an oxidant for oxidizing tantalum.

그리고. 상측에서 세 번째의 유량계(3)를 통과하여 기화기(5)로 유입됨과 아울러 탄탈륨소스탱크(6)로도 유입되는 질소가스는, 상기 탄탈륨소스탱크(6)에 압력을 가해 그 속에 담겨있는 액상의 탄탈륨소스(6a)를 탄탈륨소스유량계(7)를 통해 상기 기화기(5)로 보낸 후, 상기 기화기(5)에서 기화되어 기상으로 변한 상기 탄탈륨소스(6a)를 상기 반응기(4)내로 유입시키는 캐리어가스이다.And. Nitrogen gas flowing through the third flow meter (3) from the upper side into the vaporizer (5) and also into the tantalum source tank (6) is pressurized to the tantalum source tank (6) and the liquid contained therein After the tantalum source (6a) is sent to the vaporizer (5) through a tantalum source flowmeter (7), a carrier for introducing the tantalum source (6a) vaporized in the vaporizer (5) into the gas phase into the reactor (4) Gas.

그리고 상기 기화기(5)와 반응기(4)에 잔류하는 가스는 드라이펌프(8)에 의해 외부로 배출된다.And the gas remaining in the vaporizer 5 and the reactor 4 is discharged to the outside by the dry pump (8).

상기 탄탈륨소스(6a)로는 탄탈륨과 유기물의 화합물인 금속유기물(metal organic, MO)이 주로 사용되는데, 그중에서도 주로 사용되는 것은 탄탈륨 펜타에톡사이드(tantalum pentaethoxide, Ta(OC2H5)5)이며, 이외에 탄탈륨 펜타메톡사이드(tantalum pentamethoxide, Ta(OCH3)5)도 사용되고 또한, 무기화합물인 탄탈륨 펜타클로라이드(tantalum pentachloride, TaCl5), Ta(thd)4Cl 등도 사용된다.The tantalum source (6a) is mainly used a metal organic compound (metal organic, MO) of the tantalum and an organic material, among which is mainly used tantalum pentaethoxide, Ta (OC 2 H 5 ) 5 ) In addition, tantalum pentamethoxide (Ta (OCH 3 ) 5 ) is also used, and an inorganic compound tantalum pentachloride (TaCl 5 ), Ta (thd) 4 Cl, and the like are also used.

상기 반응기(4)내에서는 상기 기화기(5)를 거쳐 기상으로 공급되는 상기 탄탈륨 소스(6a)와, 다른 라인을 통해 반응기(4)로 공급되는 상기 산소가 웨이퍼(미도시)의 표면에서 화학반응을 일으켜 산화탄탈륨으로 되어 증착하게 되는데, 상기한 바와 같이 탄탈륨소스로는 주로 금속유기물을 이용하게 되므로 이러한 공정을 금속유기물 화학기상증착(metal organic chemical vapor deposition, MOCVD)이라 한다.In the reactor 4, the tantalum source 6a supplied to the gas phase through the vaporizer 5 and the oxygen supplied to the reactor 4 through another line are chemically reacted on the surface of a wafer (not shown). This process is called metal organic chemical vapor deposition (MOCVD), because the metal tantalum is mainly used as the tantalum source.

이때, 상기 반응기(4)는 여러장의 웨이퍼를 동시에 증착하는 배치타입(batch type)의 것이거나, 한 번에 한 장의 웨이퍼를 증착하는 싱글타입(single type) 내지 매엽식의 것이다.In this case, the reactor 4 is a batch type for depositing a plurality of wafers at the same time, or a single type or single sheet type for depositing one wafer at a time.

상기한 바와 같은 공정에 의해 산화탄탈륨이 증착되어 소정 두께의 산화탄탈륨 박막이 웨이퍼상에 형성된 후에는 열처리를 행한 후, 보통 질화티타늄(TiN)을 사용하여 상부전극을 증착시키고, 패턴형성과정을 거쳐 기타의 후속과정을 밟게 된다.After the tantalum oxide is deposited by the above-described process and a thin film of tantalum oxide having a predetermined thickness is formed on the wafer, heat treatment is performed. Then, the upper electrode is deposited using titanium nitride (TiN), followed by a pattern forming process. You will follow the other steps.

그러나, 상기한 바와 같은 종래의 방법에 의해 산화탄탈륨 박막을 증착하는 경우에는 박막의 성장속도가 느려 반도체공정에 적용될 때 단위시간내에 처리되는 웨이퍼의 양이 적은 문제점이 있었다.However, in the case of depositing a tantalum oxide thin film by the conventional method as described above, there is a problem that the growth rate of the thin film is slow and the amount of the wafer processed within a unit time is small when applied to a semiconductor process.

이러한 문제는 상기 반응기로 매엽식 반응기를 쓰는 경우에는 더욱 커지게 되어 매엽식 장비를 개발하는데 장애가 되기도 하였다.This problem has become larger when the single-layered reactor is used as the reactor, which has been an obstacle in developing the single-leafed equipment.

따라서, 상기한 바와 같은 문제점을 인식하여 안출한 본 발명의 목적은, 산화탄탈륨 박막의 증착속도를 향상시켜 단위시간내에 처리되는 웨이퍼의 양을 많게 할 수 있고, 이에 따라 매엽식 장비를 쓰는 것이 가능한 산화탄탈륨 박막 제조방법을 제공함에 있다.Accordingly, an object of the present invention, which is conceived by recognizing the above problems, can improve the deposition rate of a tantalum oxide thin film to increase the amount of wafers processed within a unit time, and thus it is possible to use sheet type equipment. It is to provide a tantalum oxide thin film manufacturing method.

제1도는 종래의 산화탄탈륨 박막 제조방법을 구현하는 장치의 구성을 보인 구성도.1 is a block diagram showing the configuration of a device for implementing a conventional method for manufacturing a tantalum oxide thin film.

제2도는 본 발명의 일 실시예에 의한 산화탄탈륨 박막 제조방법을 구현하는 장치의 구성을 보인 구성도.2 is a block diagram showing the configuration of an apparatus for implementing a method for manufacturing a tantalum oxide thin film according to an embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1,2,3 : 유량계 4 : 반응기1,2,3 Flowmeter 4: Reactor

5 : 기화기 6 : 탄탈륨소스탱크5: vaporizer 6: tantalum source tank

6a : 탄탈륨소스 7 : 탄탈륨소스유량계6a: tantalum source 7: tantalum source flowmeter

8 : 드라이펌프 9 : 토치8: dry pump 9: torch

상기한 바와 같은 본 발명의 목적을 달성하기 위하여, 탄탈륨소스탱크에 담겨 있다가 캐리어가스의 압력에 의해 기화기로 보내어져 기화된 후 상기 캐리어가스에 의해 반응기로 유입되는 탄탈륨소스와, 상기 탄탈륨소스와 다른 라인을 통해 상기 반응기로 유입되는 산소가 반응기내에서 화학반응을 일으켜서 반응기의 하부에 놓여진 웨이퍼의 표면에 산화탄탈륨 박막을 형성하는, 화학기상증착에 의한 산화탄탈륨 박막제조방법에 있어서, 각각 별도의 용기에 담겨진 수소가스와 산소가스를 토치로 유입시켜 토치내에서 발생되는 전기스파크에 의해 H2O기체를 발생시키고, 이 H2O기체를 상기 탄탈륨소스 및 산소와는 별도의 라인을 통해 반응기내로 유입시켜 상기 화학반응을 활성화시키는 것을 특징으로 하는 산화탄탈륨 박막 제조방법이 제공된다.In order to achieve the object of the present invention as described above, the tantalum source, which is contained in the tantalum source tank and is sent to the vaporizer by the pressure of the carrier gas and vaporized and then introduced into the reactor by the carrier gas, and the tantalum source and In the method of manufacturing a tantalum oxide thin film by chemical vapor deposition, the oxygen flowing into the reactor through another line causes a chemical reaction in the reactor to form a tantalum oxide thin film on the surface of the wafer placed under the reactor. generating a H 2 O gas by an electric spark generated in the torch to a torch flowing hydrogen gas and oxygen gas contained in the vessel, the H 2 O wherein the gas tantalum source and oxygen and is into the reactor through a separate line Provided is a method for producing a tantalum oxide thin film, characterized in that to activate the chemical reaction by inflow.

이 경우 상기한 방법에 의해 박막의 성장속도를 빠르게 하기 위해서는 탄탈륨소스로 탄탈륨 펜타에톡사이드 내지 탄탈륨 펜타메톡사이드를 사용하는 것이 바람직하다.In this case, in order to increase the growth rate of the thin film by the above method, it is preferable to use tantalum pentaethoxide to tantalum pentamethoxide as a tantalum source.

그리고, 이때의 상기 반응기의 압력은 10 내지 150 Pa이고, 반응기내의 웨이퍼 온도는 섭씨 320도 내지 450도인 것이 바람직하다.At this time, the pressure of the reactor is 10 to 150 Pa, the wafer temperature in the reactor is preferably 320 degrees Celsius to 450 degrees Celsius.

그리고, 상기한 H2O기체를 생성시켜 상기 반응기로 공급하는 방법은 수소(H2)와 산소(O2)가스를 토치로 따로 공급하여 상기 토치의 내부에서 전기스파크를 발생시켜 H2O기체를 생성한 후, 이를 상기 반응기로 공급하는 방법으로 되는 것이 바람직하다.The method of generating the H 2 O gas and supplying it to the reactor supplies hydrogen (H 2 ) and oxygen (O 2 ) gas to the torch separately to generate an electric spark inside the torch to generate H 2 O gas. After the production, it is preferred to be a method of feeding it to the reactor.

제2도는 본 발명의 일실시예에 의한 산화탄탈륨 박막 제조방법을 구현하기 위해 구성된 장치의 구성도로서, 이에 도시한 바와 같이 본 발명의 방법을 구현하기 위한 장치의 구성중에서 종래의 것과 상이한 주된 점은 H2O기체를 생성하기 위한 토치(9)를 따로 구비하고 있다는 데 있다.2 is a block diagram of a device configured to implement a method for manufacturing a tantalum oxide thin film according to an embodiment of the present invention, and as shown therein, a main point of the structure of the device for implementing the method of the present invention is different from the conventional one. Is provided with a torch 9 for generating H 2 O gas separately.

도시된 바와 같이, 상기 토치(9)로 수소와 산소가스를 공급한 후 상기 토치(9)의 내부에서 전기스파크가 발생되도록 하여 상기 수소와 산소를 반응시켜 H2O기체로 만든 후에 상기 반응기(4)로 유입시키게 된다.As shown in the drawing, after supplying hydrogen and oxygen gas to the torch 9, an electric spark is generated inside the torch 9 to react the hydrogen and oxygen to form H 2 O gas, and then the reactor ( 4).

상기 반응기(4)내에서 일어나는 반응은 종래의 것과 동일하며, 이때 함께 공급되는 H2O기체는 반응을 활성화 시켜 반응속도를 증가시키는 촉매의 역할을 하게 되는데, 실험결과 산화탄탈륨 박막의 증착속도가 동일한 조건에서 종래의 방법을 사용하는 경우보다 5배이상 증가하였다.The reaction occurring in the reactor 4 is the same as the conventional one, and the H 2 O gas supplied together serves as a catalyst to increase the reaction rate by activating the reaction. As a result, the deposition rate of the tantalum oxide thin film Under the same conditions, the increase was more than five times compared with the conventional method.

상기 H2O기체 외의 탄탈륨소스(6a), 질소, 산소등의 역할 및 공급방법은 종래의 것과 동일하며, 도면에 도시된 미설명 부호는 종래의 장치의 구성도를 도시한 제1도와 같아 설명을 생략한 것이다.The role and supply method of the tantalum source 6a, nitrogen, oxygen, etc. other than the H 2 O gas are the same as those of the conventional art, and reference numerals shown in the drawings are the same as those of the first diagram showing the configuration of the conventional apparatus. Will be omitted.

상기한 바와 같이, 본 발명의 산화탄탈륨 박막제조방법을 사용하는 경우에는 기상의 산화탄탈륨소스와 산소가 반응하여 산화탄탈륨이 되는 과정을 H2O기체가 활성화함에 의해 종래의 방법에 의한 산화탄탈륨 박막 성장속도보다 5배 이상 빠른 속도로 산화탄탈륨 박막을 성장시킬 수 있으므로, 단위시간당 처리하는 웨이퍼의 양이 많아지며, 이에 따라 매엽식 장비의 개발에도 문제가 없게 된다.As described above, in the case of using the method for producing a tantalum oxide thin film of the present invention, the tantalum oxide thin film according to the conventional method is activated by H 2 O gas activating a process in which gaseous tantalum oxide source reacts with oxygen to form tantalum oxide. Since the tantalum oxide thin film can be grown at a rate five times faster than the growth rate, the amount of wafers to be processed per unit time increases, and thus there is no problem in the development of the sheet type equipment.

Claims (3)

탄탈륨소스탱크에 담겨 있다가 캐리어가스의 압력에 의해 기화기로 보내어져 기화된 후 상기 캐리어가스에 의해 반응기로 유입되는 탄탈륨소스와, 상기 탄탈륨소스와 다른 라인을 통해 상기 반응기로 유입되는 산소가 반응기내에서 화학반응을 일으켜서 반응기의 하부에 놓여진 웨이퍼의 표면에 산화탄탈륨 박막을 형성하는, 화학기상증착에 의한 산화탄탈륨 박막제조방법에 있어서, 각각 별도의 용기에 담겨진 수소가스와 산소가스를 토치로 유입시켜 토치내에서 발생되는 전기스파크에 의해 H2O기체를 발생시키고, 이 H2O기체를 상기 탄탈륨소스 및 산소와는 별도의 라인을 통해 반응기내로 유입시켜 상기 화학반응을 활성화시키는 것을 특징으로 하는 산화탄탈륨 박막 제조방법.The tantalum source contained in the tantalum source tank and sent to the vaporizer by the pressure of the carrier gas, vaporized and introduced into the reactor by the carrier gas, and the oxygen introduced into the reactor through a line different from the tantalum source, are introduced into the reactor. In the method of manufacturing a tantalum oxide thin film by chemical vapor deposition, a chemical reaction occurs to form a tantalum oxide thin film on the surface of a wafer placed under the reactor. H 2 O gas is generated by the electric spark generated in the inside, and the H 2 O gas is introduced into the reactor through a line separate from the tantalum source and oxygen to activate the chemical reaction. Tantalum thin film manufacturing method. 제1항에 있어서, 상기 탄탈륨소스는 탄탈륨 펜타에톡사이드 또는 탄탈륨 펜타메톡사이드 중 하나인 것을 특징으로 하는 산화탄탈륨 박막 제조방법.The method of claim 1, wherein the tantalum source is one of tantalum pentaethoxide or tantalum pentamethoxide. 제1항에 있어서, 상기 반응기 내부의 압력은 10 내지 150Pa이고, 상기 반응기 내부의 웨이퍼의 온도는 섭씨 320도 내지 450인 것을 특징으로 하는 산화탄탈륨 박막 제조방법.The method of claim 1, wherein the pressure inside the reactor is 10 to 150 Pa, and the temperature of the wafer inside the reactor is 320 to 450 degrees Celsius.
KR1019960063419A 1996-12-10 1996-12-10 Method for manufacturing tantalum oxide film KR100302584B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960063419A KR100302584B1 (en) 1996-12-10 1996-12-10 Method for manufacturing tantalum oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960063419A KR100302584B1 (en) 1996-12-10 1996-12-10 Method for manufacturing tantalum oxide film

Publications (2)

Publication Number Publication Date
KR19980045242A KR19980045242A (en) 1998-09-15
KR100302584B1 true KR100302584B1 (en) 2001-11-30

Family

ID=37529567

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960063419A KR100302584B1 (en) 1996-12-10 1996-12-10 Method for manufacturing tantalum oxide film

Country Status (1)

Country Link
KR (1) KR100302584B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358066B1 (en) * 1999-06-25 2002-10-25 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
KR100434311B1 (en) * 2000-01-31 2004-06-05 주식회사 하이닉스반도체 Method for forming insulator in semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304136A (en) * 1992-04-28 1993-11-16 Tokyo Electron Tohoku Ltd Oxidation system
JPH06163519A (en) * 1992-11-17 1994-06-10 Matsushita Electric Ind Co Ltd Formation of tantalum oxide thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05304136A (en) * 1992-04-28 1993-11-16 Tokyo Electron Tohoku Ltd Oxidation system
JPH06163519A (en) * 1992-11-17 1994-06-10 Matsushita Electric Ind Co Ltd Formation of tantalum oxide thin film

Also Published As

Publication number Publication date
KR19980045242A (en) 1998-09-15

Similar Documents

Publication Publication Date Title
JP4704618B2 (en) Method for producing zirconium oxide film
US7560793B2 (en) Atomic layer deposition and conversion
JP6980106B2 (en) Semiconductor device manufacturing method, substrate processing device, program and substrate processing method
KR101379015B1 (en) METHOD OF DEPOSITING Ru FILM USING PEALD AND DENSE Ru FILM
KR100481441B1 (en) Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor
JPH0795548B2 (en) Vapor growth method of silicon dioxide film
KR20120126012A (en) Gas supply apparatus, thermal treatment apparatus, gas supply method, and thermal treatment method
KR100463633B1 (en) Method for depositing thin film on wafer using Hafnium compound
KR20010063478A (en) Method of forming an aluminum oxide film in a semiconductor device
KR20080035984A (en) Oxidation apparatus and method for semiconductor process, and computer readable medium
KR100474565B1 (en) Method and apparatus for supplying a source gas
KR19990074809A (en) Thin Film Manufacturing Method
KR100510473B1 (en) Method for forming upper electrode of a capacitor using ALD
KR100302584B1 (en) Method for manufacturing tantalum oxide film
CN113519041B (en) Substrate processing apparatus, reaction container, method for manufacturing semiconductor device, and recording medium
JPWO2020189205A1 (en) Substrate processing equipment, semiconductor equipment manufacturing methods and nozzles
KR100258851B1 (en) Method for manufacturing oxide tantalum film
KR100531464B1 (en) A method for forming hafnium oxide film using atomic layer deposition
JP2009228113A (en) Film formation method of ruthenium film
KR101094379B1 (en) Method for forming noble metal lyaer using ozone reactance gas
CN111868300A (en) Method for manufacturing semiconductor device, substrate processing apparatus, and program
KR20130033301A (en) Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus
US20230243031A1 (en) Film forming method and film forming apparatus
KR940012531A (en) Method for manufacturing dielectric thin film having high dielectric constant and apparatus therefor
JP2001308087A (en) Film-forming method and film-forming apparatus

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J201 Request for trial against refusal decision
AMND Amendment
B601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 19991120

Effective date: 20010430

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100624

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee