KR100272546B1 - Method for making dram cell - Google Patents
Method for making dram cell Download PDFInfo
- Publication number
- KR100272546B1 KR100272546B1 KR1019980036340A KR19980036340A KR100272546B1 KR 100272546 B1 KR100272546 B1 KR 100272546B1 KR 1019980036340 A KR1019980036340 A KR 1019980036340A KR 19980036340 A KR19980036340 A KR 19980036340A KR 100272546 B1 KR100272546 B1 KR 100272546B1
- Authority
- KR
- South Korea
- Prior art keywords
- dram cell
- making dram
- making
- cell
- dram
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980036340A KR100272546B1 (en) | 1998-09-03 | 1998-09-03 | Method for making dram cell |
US09/299,577 US6387759B1 (en) | 1998-05-18 | 1999-04-27 | Method of fabricating a semiconductor device |
DE19921110A DE19921110B4 (en) | 1998-05-18 | 1999-05-07 | Method for producing a semiconductor component |
JP13621399A JP3921582B2 (en) | 1998-05-18 | 1999-05-17 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980036340A KR100272546B1 (en) | 1998-09-03 | 1998-09-03 | Method for making dram cell |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000018661A KR20000018661A (en) | 2000-04-06 |
KR100272546B1 true KR100272546B1 (en) | 2000-11-15 |
Family
ID=19549511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980036340A KR100272546B1 (en) | 1998-05-18 | 1998-09-03 | Method for making dram cell |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100272546B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100376868B1 (en) * | 2000-11-06 | 2003-03-19 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
-
1998
- 1998-09-03 KR KR1019980036340A patent/KR100272546B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100376868B1 (en) * | 2000-11-06 | 2003-03-19 | 주식회사 하이닉스반도체 | Method for fabricating semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
KR20000018661A (en) | 2000-04-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20080728 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |