KR100272546B1 - Method for making dram cell - Google Patents

Method for making dram cell Download PDF

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Publication number
KR100272546B1
KR100272546B1 KR1019980036340A KR19980036340A KR100272546B1 KR 100272546 B1 KR100272546 B1 KR 100272546B1 KR 1019980036340 A KR1019980036340 A KR 1019980036340A KR 19980036340 A KR19980036340 A KR 19980036340A KR 100272546 B1 KR100272546 B1 KR 100272546B1
Authority
KR
South Korea
Prior art keywords
dram cell
making dram
making
cell
dram
Prior art date
Application number
KR1019980036340A
Other languages
Korean (ko)
Other versions
KR20000018661A (en
Inventor
Jeong-Soo Park
Hyun-Jo Yang
Original Assignee
Hyundai Micro Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Micro Electronics Co filed Critical Hyundai Micro Electronics Co
Priority to KR1019980036340A priority Critical patent/KR100272546B1/en
Priority to US09/299,577 priority patent/US6387759B1/en
Priority to DE19921110A priority patent/DE19921110B4/en
Priority to JP13621399A priority patent/JP3921582B2/en
Publication of KR20000018661A publication Critical patent/KR20000018661A/en
Application granted granted Critical
Publication of KR100272546B1 publication Critical patent/KR100272546B1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
KR1019980036340A 1998-05-18 1998-09-03 Method for making dram cell KR100272546B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019980036340A KR100272546B1 (en) 1998-09-03 1998-09-03 Method for making dram cell
US09/299,577 US6387759B1 (en) 1998-05-18 1999-04-27 Method of fabricating a semiconductor device
DE19921110A DE19921110B4 (en) 1998-05-18 1999-05-07 Method for producing a semiconductor component
JP13621399A JP3921582B2 (en) 1998-05-18 1999-05-17 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980036340A KR100272546B1 (en) 1998-09-03 1998-09-03 Method for making dram cell

Publications (2)

Publication Number Publication Date
KR20000018661A KR20000018661A (en) 2000-04-06
KR100272546B1 true KR100272546B1 (en) 2000-11-15

Family

ID=19549511

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980036340A KR100272546B1 (en) 1998-05-18 1998-09-03 Method for making dram cell

Country Status (1)

Country Link
KR (1) KR100272546B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100376868B1 (en) * 2000-11-06 2003-03-19 주식회사 하이닉스반도체 Method for fabricating semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100376868B1 (en) * 2000-11-06 2003-03-19 주식회사 하이닉스반도체 Method for fabricating semiconductor device

Also Published As

Publication number Publication date
KR20000018661A (en) 2000-04-06

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Payment date: 20080728

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