KR100258869B1 - Gas supply equipment on chemical deposition apparatus - Google Patents

Gas supply equipment on chemical deposition apparatus Download PDF

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KR100258869B1
KR100258869B1 KR1019970072151A KR19970072151A KR100258869B1 KR 100258869 B1 KR100258869 B1 KR 100258869B1 KR 1019970072151 A KR1019970072151 A KR 1019970072151A KR 19970072151 A KR19970072151 A KR 19970072151A KR 100258869 B1 KR100258869 B1 KR 100258869B1
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South Korea
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gas
pipe
metal
oxygen
oxygen supply
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KR1019970072151A
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Korean (ko)
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KR19990052641A (en
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강동현
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김영환
현대반도체주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE: A process gas supply apparatus of a semiconductor metal organic chemical deposition system is provided to effectively purge a metal-oxygen supply pipe using nitrogen gas supplied from a nitrogen gas pipe as well as prevent the liquefaction of metal-oxygen gas in a gas mixing pipe, thereby enabling the uneven deposition of organic metal. CONSTITUTION: A metal-oxygen supply pipe(100) is connected to an oxygen gas pipe(110), is connected to a gas mixing pipe(120). A metal gas pipe(130) is connected between the oxygen gas pipe(110) and gas mixing pipe(120). A nitrogen gas pipe(140) is connected to an immediate part of the oxygen gas pipe(110) and a shower head is connected to a bottom of the gas mixing pipe(120). The metal-oxygen supply pipe(100) is surrounded by a cylindrical heat plate(200) to heat the gas mixing pipe(120) by at least 300 deg.C, and the heat plate(200) is surrounded by an adiabatic member(300).

Description

반도체 유기금속 화학증착장비의 공정가스 공급장치Process gas supply device for semiconductor organometallic chemical vapor deposition equipment

본 발명은 반도체 유기금속 화학증착장비(Metal Organic chmical deposition system)의 공정가스 공급장치에 관한 것으로, 특히 공정챔버에 공정가스를 공급하는 메탈-옥시겐 공급관에 관한 것이다.The present invention relates to a process gas supply apparatus for a semiconductor organic metal chemical deposition system, and more particularly, to a metal-oxygen supply pipe for supplying a process gas to a process chamber.

일반적으로 반도체 제조공정중에서 웨이퍼에 유기금속을 증착하는 유기금속 화학증착장비에 있어서, 증착이 수행되는 공정챔버내의 상측에는 유기금속의 혼합물을 분사하기 위한 샤워헤트가 설치되어 있고, 그 샤워헤드에는 통상적인 메탈-옥시겐 공급관이 연통되어 있는데, 이러한 메탈-옥시겐 공급관은 도1에 도시된 바와 같다.In general, in an organic metal chemical vapor deposition apparatus for depositing an organometal on a wafer during a semiconductor manufacturing process, a shower head for spraying a mixture of organometals is provided on the upper side of a process chamber where the vapor deposition is performed, and the showerhead is typically Phosphorus metal-oxygen supply pipe is in communication, such a metal-oxygen supply pipe as shown in FIG.

즉, 통상적인 산화질소(N2O)/산소(O2) 및 불화수소 (HF3)가 공급되기 위한 옥시겐 가스관(11)이 메탈-옥시겐 공급관(10)의 상부에 연통되어 있고, 그 메탈-옥시겐 공급관(10)의 중간에는 바륨(Ba), 스트론튬(Sr), 티탄(Ti)등의 금속을 공급하기 위한 메탈가스관(12)이 연통되어 있으며, 상기 메탈-옥시겐 공급관(10)의 하단에는 산화질소/산소 및 불화수소가 메탈가스와 뒤섞이기 위한 가스혼합관(13)이 연장되어 있고, 그 가스혼합관(13)의 중간, 즉 메탈-옥시겐 공급관(10)의 하부에는 통상의 질소가스(N2)가 공급되기 위한 질소가스관(14)이 연통되어 있다.That is, an oxygen gas pipe 11 for supplying conventional nitrogen oxide (N 2 O) / oxygen (O 2 ) and hydrogen fluoride (HF 3 ) is in communication with the upper portion of the metal-oxygen supply pipe 10, In the middle of the metal-oxygen supply pipe 10, a metal gas pipe 12 for supplying metals such as barium (Ba), strontium (Sr), titanium (Ti), and the like, is in communication with the metal-oxygen supply pipe ( At the lower end of 10), a gas mixing tube 13 for mixing nitrogen oxide / oxygen and hydrogen fluoride with the metal gas is extended, and in the middle of the gas mixing tube 13, that is, of the metal-oxygen supply pipe 10 A nitrogen gas pipe 14 for supplying normal nitrogen gas N 2 is communicated with the lower part.

또한, 상기 메탈가스관(12)과 질소가스관(14)의 중간에는 공정완료후에 혼합가스를 배기시키기 위한 배출가스관(15)이 연통되어 있다.In the middle of the metal gas pipe 12 and the nitrogen gas pipe 14, an exhaust gas pipe 15 for exhausting the mixed gas after the completion of the process is in communication.

상기 옥시겐 가스관(11) 및 질소가스관(14)의 각 입구부에는 가스밸브 (Pneumatic Bellows Valve)(11a, 14a)가 각각 장착되어 있고, 상기 가스혼합관(13)의 입구부 및 배출가스관(15)의 중간에는 각각 온도감응 밸브(13a, 15a)가 장착되어 있다.Pneumatic Bellows Valves 11a and 14a are mounted at the inlets of the oxygen gas pipe 11 and the nitrogen gas pipe 14, respectively, and the inlet and exhaust gas pipes of the gas mixing pipe 13 In the middle of 15), temperature sensitive valves 13a and 15a are mounted, respectively.

한편, 상기 가스혼합관(13)내에서 메탈가스와 옥시겐 가스가 효율적으로 혼합되도록 함과 아울러 공정챔버(미도시)로 유입되어 반응이 일어나기 전에 방열되는 것을 방지하도록 하기 위하여, 메탈-옥시겐 공급관(10)의 외주면에 저항가열식 히터의 열선이 보온밴드(20)에 둘러 싸여 있다.On the other hand, in order to efficiently mix the metal gas and the oxygen gas in the gas mixing tube 13 and to prevent the heat dissipation before the reaction occurs to enter the process chamber (not shown), the metal-oxygen On the outer circumferential surface of the supply pipe 10, a heating wire of a resistance heating heater is surrounded by the insulation band 20.

도면중 미설명 부호인 16인 샤워헤드와 결합되기 위한 가스켓 플랜지이다.Gasket flange to be combined with the non-explanatory reference numeral 16 in the figure.

상기와 같은 종래의 메탈-옥시겐 공급관에서의 가스흐름은 다음과 같다.The gas flow in the conventional metal-oxygen supply pipe as described above is as follows.

통상적인 산화질소/산소 및 불화수소가 옥시겐 가스관(11)을 통해 가스혼합관(13)으로 유입됨과 아울러 메탈가스관(12)으로부터는 전술한 메탈가스가 가스혼합관(13)으로 유입되어 상기의 옥시겐 가스와 메탈 가스가 혼합되고, 이 혼합된 메탈-옥시겐 가스는 공정챔버(미도시)의 샤워헤드(미도시)에서 웨이퍼를 향해 분사되면서 증착되는 것이었다.Conventional nitric oxide / oxygen and hydrogen fluoride are introduced into the gas mixing tube 13 through the oxygen gas pipe 11, and the above-described metal gas is introduced into the gas mixing pipe 13 from the metal gas pipe 12. Oxygen gas and metal gas were mixed, and the mixed metal-oxygen gas was deposited while being sprayed toward the wafer in the shower head (not shown) of the process chamber (not shown).

이러한, 소정의 증착공정이 완료된 이후에는 메탈-옥시겐 가스의 공급이 중단됨과 아울러 배출가스관(15)의 밸브가 열리면서 가스혼합관(13)의 남은 메탈-옥시겐 가스를 배출시키고, 이어서 상기 질소가스관(14)으로부터 가스혼합관(13)으로 질소가스가 상향으로 공급되어 메탈-옥시겐 가스를 배출시키고, 이어서 상기 질소가스관 (14)으로부터 가스혼합관(13)으로 질소가스가 상향으로 공급되어 메탈-옥시겐 공급관(10)을 정화시키게 되는 것이었다.After the predetermined deposition process is completed, the supply of the metal-oxygen gas is stopped and the valve of the exhaust gas pipe 15 is opened to discharge the remaining metal-oxygen gas of the gas mixing pipe 13, and then the nitrogen Nitrogen gas is supplied upward from the gas pipe 14 to the gas mixing pipe 13 to discharge the metal-oxygen gas, and then nitrogen gas is supplied upward from the nitrogen gas pipe 14 to the gas mixing pipe 13. It was to purge the metal-oxygen supply pipe (10).

그러나, 상기와 같은 종래의 메탈-옥시겐 공급관(10)에 있어서는, 질소가스관(14)이 메탈-옥시겐 공급관(10)의 하부에 연통되어 있으므로, 그 질소가스관(14)으로부터 공급되는 질소가스가 메칼-옥시겐 공급관(10)을 충분히 정화시키지 못하여 라인 전체에 오염이 발생될 우려가 있었다.However, in the conventional metal-oxygen supply pipe 10 as described above, since the nitrogen gas pipe 14 communicates with the lower portion of the metal-oxygen supply pipe 10, the nitrogen gas supplied from the nitrogen gas pipe 14. There was a possibility that contamination could occur in the entire line due to insufficient purification of the mechal-oxygen supply pipe 10.

또한, 상기 메탈-옥시겐 공급관(10)의 외주면에 감겨지는 밴드형의 히터가 가스혼합관(13)에서 필요로 하는 열을 충분히 발열시키지 못하여, 그 가스혼합관 (13)내에서 온도구배가 발생하게 되고, 이러한 온도구배는 기체상태의 메탈-옥시겐 가스를 액화시켜 파티클을 생성시키게 되며, 이 파티클에 따른 웨이퍼의 증착불량이 발생되는 문제점도 있었다.In addition, the band-type heater wound on the outer circumferential surface of the metal-oxygen supply pipe 10 does not sufficiently generate heat required by the gas mixing pipe 13, so that the temperature gradient in the gas mixing pipe 13 is increased. This temperature gradient causes the particles to be liquefied by gaseous metal-oxygen gas, and there is a problem in that the deposition failure of the wafer is caused by the particles.

따라서, 본 발명은 상기와 같은 메탈-옥시겐 공급관이 가지는 문제점을 감안하여 안출한 것으로, 질소가스관에서 공급되는 질소가스가 메탈-옥시겐 공급관을 효과적으로 정화시킴은 물론, 가스혼합관에서의 메탈-옥시겐 가스의 액화를 방지하여 유기금속의 증착이 균일하게 이루어질 수 있는 반도체 유기금속 화학증착장비의 메탈-옥시겐 공급관을 제공하려는데 그 목적이 있다.Therefore, the present invention has been devised in view of the above problems with the metal-oxygen supply pipe, and the nitrogen gas supplied from the nitrogen gas pipe effectively purifies the metal-oxygen supply pipe, as well as the metal in the gas-mixed pipe. It is an object of the present invention to provide a metal-oxygen supply pipe of a semiconductor organometallic chemical vapor deposition apparatus that prevents liquefaction of an oxygen gas and enables deposition of an organic metal uniformly.

제1도는 메탈-옥시겐 공급관을 보인 평면도.1 is a plan view showing a metal-oxygen supply pipe.

제2도 발명에 의한 메탈-옥시겐 공급관을 보인 평면도.2 is a plan view showing a metal-oxygen supply pipe according to the invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

100 : 메탈-옥시겐 공급관 110 : 옥시겐 가스관100: metal-oxygen supply pipe 110: oxygen gas pipe

120 : 가스혼합관 130 : 메탈 가스관120: gas mixing pipe 130: metal gas pipe

140 : 질소가스관 151, 152, 153 : 열전대140: nitrogen gas pipe 151, 152, 153: thermocouple

151a, 152a, 153a : 히터입력선 200 : 열판151a, 152a, 153a: heater input line 200: hot plate

300 : 단열부재300: insulation member

이와 같은 본 발명의 목적을 달성하기 위하여, 옥시겐 가스관과 메탈가스관이 가스혼합관에서 연통됨과 아울러 그 메탈가스관의 상부에 질소가스관이 연통되는 메탈-옥시겐 공급관이 공정쳄버의 샤워헤드에 연결되는 것을 특징으로 하는 유기금속 화학증착장비의 공정가스 공급장치가 제공된다.In order to achieve the object of the present invention, the oxygen-oxygen pipe and the metal gas pipe is in communication with the gas mixing pipe and the metal-oxygen supply pipe is connected to the shower head of the process chamber while the nitrogen gas pipe is communicated with the upper portion of the metal gas pipe. Provided is a process gas supply apparatus for organometallic chemical vapor deposition equipment.

이하, 본 발명에 의한 반도체 유기금속 화학증착장비의 메탈-옥시겐 공급관을 첨부 도면에 도시된 일실시예에 의거하여 상세하게 설명한다.Hereinafter, a metal-oxygen supply pipe of a semiconductor organometallic chemical vapor deposition apparatus according to the present invention will be described in detail based on an embodiment shown in the accompanying drawings.

제2도는 본 발명에 의한 메탈-옥시겐 공급관을 보인 평면도로서, 이에 도시된 바와같이 본 발명에 의한 메탈-옥시겐 공급관(100)은, 그 상부에 옥시겐 가스관 (110)이 연결되고, 그 옥시겐 가스관(110)의 하부에는 가스혼합관(120)이 연결되며, 상기 옥시겐 가스관(110)과 가스혼합관(120)의 사이에는 메탈가스관(130)이 연결되고, 그 메탈가스관(130)의 상부, 즉 옥시겐 가스관(110)의 중간에는 질소가스관(140)이 연결되며, 상기 가스혼합관(120)의 하단에는 공정챔버(미도시)의 샤워헤드(미도시)가 연통된다.2 is a plan view showing a metal-oxygen supply pipe according to the present invention, as shown in the metal-oxygen supply pipe 100 according to the present invention, the oxygen gas pipe 110 is connected to the upper portion thereof, A gas mixing pipe 120 is connected to the lower portion of the oxygen gas pipe 110, and a metal gas pipe 130 is connected between the oxygen gas pipe 110 and the gas mixing pipe 120, and the metal gas pipe 130 is connected thereto. The upper portion of the), that is, the nitrogen gas pipe 140 is connected to the middle of the oxygen gas pipe 110, the shower head (not shown) of the process chamber (not shown) is communicated to the bottom of the gas mixing pipe 120.

상기 메탈-옥시겐 공급관(100)은 특히 가스혼합관(120)에서의 온도가 300℃이상이 되도록 하기 위하여 그 외주면에 원통형의 열판(200)이 외삽되고, 그 열판 (200)의 외주면에는 단열부재(300)가 감싸진다.In particular, the metal-oxygen supply pipe 100 is extrapolated to a cylindrical hot plate 200 on its outer circumferential surface in order to ensure that the temperature in the gas mixing tube 120 is 300 ° C. or higher, and is insulated on the outer circumferential surface of the hot plate 200. Member 300 is wrapped.

상기 옥시겐 가스관(110)과 질소가스관(140)이 연통되는 부위 및 옥시겐 가스관(110)과 메탈가스관(130)이 연통되는 부위 그리고 가스혼합관(120)의 하부에는 각각 제1, 제2, 제3열전대(151, 152, 153)가 단열부재(300)의 내부에 내장된다.First and second portions of the portion where the oxygen gas pipe 110 and the nitrogen gas pipe 140 communicate, the portion where the oxygen gas pipe 110 and the metal gas pipe 130 communicate, and the lower portion of the gas mixing pipe 120, respectively. Third thermocouples 151, 152, and 153 are embedded in the heat insulating member 300.

상기 각 관은 데드 스페이스(dead space)를 제거하여 파티클 발생을 억제하도록 마이크로 피팅 웰딩(micro fitting welding)으로 결합된다.Each tube is joined by micro fitting welding to remove dead space and suppress particle generation.

도면중 종래와 동일한 부분에 대하여는 동일한 부호를 부여하였다.In the drawings, the same reference numerals are given to the same parts as in the prior art.

도면중 미설명 부호인 151a, 152a, 153a는 각각 히터 입력선이다.In the drawings, reference numerals 151a, 152a, and 153a denote heater input lines, respectively.

상기와 같이 구성되는 본 발명에 의한 메탈-옥시겐 공급관에 있어서는, 산화질소/산소 및 불화수소가 옥시겐 가스관(110)을 통해 가스혼합관(120)으로 유입됨과 아울러 메탈가스관(130)으로부터는 전술한 메탈가스가 가스혼합관(120)으로 유입되어 상기의 옥시겐 가스와 메탈 가스가 혼합되고, 이 혼합된 메탈-옥시겐 가스는 공정챔버(미도시)의 샤워헤드(미도시)에서 웨이퍼(미도시)를 향해 분사되면서 증착되는 것이다.In the metal-oxygen supply pipe according to the present invention configured as described above, nitrogen oxide / oxygen and hydrogen fluoride are introduced into the gas mixing pipe 120 through the oxygen gas pipe 110 and from the metal gas pipe 130. The above-described metal gas is introduced into the gas mixing tube 120 to mix the oxygen gas and the metal gas, and the mixed metal-oxygen gas is a wafer in a shower head (not shown) of the process chamber (not shown). It is deposited while spraying toward (not shown).

이러한, 소정의 증착공정이 완료된 이후에는 메탈-옥시겐 가스의 공급이 중단됨과 아울러 상기 질소가스관(140)으로부터 질소가스가 하향으로 공급되어 메탈-옥시겐 공급관(100)을 정화시키게 되는 것이다.After the predetermined deposition process is completed, the supply of the metal-oxygen gas is stopped and the nitrogen gas is supplied downward from the nitrogen gas pipe 140 to purify the metal-oxygen supply pipe 100.

한편, 상기 메탈-옥시겐 공급관(100)의 외주면에는 열판형의 히터(200)가 외삽되어 그 내부에 가스가 응축되지 못하도록 충분한 열을 공급하게 된다.On the other hand, the hot plate-shaped heater 200 is extrapolated to the outer circumferential surface of the metal-oxygen supply pipe 100 to supply sufficient heat to prevent the gas from condensing therein.

이로써, 상기 메탈-옥시겐 공급관(100)내를 질소가스로 충분히 정화시킬 수 있게되어 가스혼합관(120)에서의 파티클의 발생율을 현저하게 감소시킬 수 있게 되는 것은 물론, 상기 메탈-옥시겐 공급관(100)을 흐르는 가스가 응축되면서 관내를 막는 것을 방지할 수 있다.As a result, the inside of the metal-oxygen supply pipe 100 can be sufficiently purged with nitrogen gas, thereby significantly reducing the generation rate of particles in the gas mixing pipe 120, as well as the metal-oxygen supply pipe. The gas flowing through the 100 can be prevented from being condensed while condensing the gas.

이상에서 설명한 바와 같이 본 발명에 의한 반도체 유기금속 화학증착장비의 공정가스 공급장치는, 옥시겐 가스관과 메탈가스관이 가스혼합관에서 연통됨과 아울러 그 메탈가스관의 상부에 질소가스관이 연통되는 메탈-옥시겐 공급관이 공정챔버의 샤워헤드에 연결되도록 함으로써, 상기 메탈-옥시겐 공급관에서의 파티클이 현저하게 감소되므로 웨이퍼의 증착율이 향상됨은 물론 가스의 응축되면서 관내를 막는 현상을 방지하여 장비의 유지보수 기간이 길어지는 효과가 있다.As described above, the process gas supply apparatus of the semiconductor organometallic chemical vapor deposition apparatus according to the present invention is a metal-oxy, in which an oxygen gas pipe and a metal gas pipe communicate with each other in a gas mixing pipe, and a nitrogen gas pipe communicates with the upper portion of the metal gas pipe. By allowing the gen supply pipe to be connected to the shower head of the process chamber, the particles in the metal-oxygen supply pipe are significantly reduced, thereby increasing the deposition rate of the wafer and preventing the condensation of the pipe while condensing the gas. This has a longer effect.

Claims (2)

옥시겐 가스관과 메탈가스관이 가스혼합관에서 연통됨과 아울러 그 메탈가스관의 상부에 질소가스관이 연통되는 메탈-옥시겐 공급관이 공정챔버의 샤워헤드에 연결되는 것을 특징으로 하는 반도체 유기금속 화학증착장비의 공정가스 공급장치.Oxygen gas pipes and metal gas pipes are in communication with the gas mixture pipe, and the metal-oxygen supply pipes in which the nitrogen gas pipes are communicated with the upper part of the metal gas pipe is connected to the shower head of the process chamber of the semiconductor organometallic chemical vapor deposition equipment Process gas supply. 제1항에 있어서, 상기 메탈-옥시겐 공급관의 외주면에 원통형의 열판이 외삽되는 것을 특징으로 하는 반도체 유기금속 화학증착장비의 공정가스 공급장치.The apparatus of claim 1, wherein a cylindrical hot plate is extrapolated to an outer circumferential surface of the metal-oxygen supply pipe.
KR1019970072151A 1997-12-23 1997-12-23 Gas supply equipment on chemical deposition apparatus KR100258869B1 (en)

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