KR100253590B1 - Flare measuring method - Google Patents

Flare measuring method Download PDF

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KR100253590B1
KR100253590B1 KR1019970015591A KR19970015591A KR100253590B1 KR 100253590 B1 KR100253590 B1 KR 100253590B1 KR 1019970015591 A KR1019970015591 A KR 1019970015591A KR 19970015591 A KR19970015591 A KR 19970015591A KR 100253590 B1 KR100253590 B1 KR 100253590B1
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flare
energy
photoresist
measuring
value
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KR19980078154A (en
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이승혁
김석균
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김영환
현대전자산업주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A method of measuring a flare is to measure threshold energy and the energy of the flare and to calculate an accurate flare value, thereby obtaining an effective lithography simulation. CONSTITUTION: The method includes the steps of measuring a threshold energy and measuring the energy of the flare. The threshold energy is to develop a photoresist of an exposed area. The energy of a flare is to develop the photoresist of an unexposed area. The flare value is calculated by using the following formula, Flare(%)=100*Eflare/Eth. To measure the flare, a stepper and a scanner are used. A pattern used to measure the flare is in the form of a rectangular shape. The threshold energy which is required to develop completely the photoresist of the exposed area is 8,25mJ/cm¬2 in the scanner, and the threshold energy being 290 milli-seconds in the stepper. The photoresist comprises both a positive photoresist and a negative photoresist.

Description

반도체 노광장비의 플레어(Flare) 측정방법Flare measuring method of semiconductor exposure equipment

본 발명은 반도체 노광장비의 플레어(Flare) 측정방법에 관한 것으로, 특히 노광장비에 있어서 렌즈의 결함(defect)으로 인한 빛의 분산(scattering)으로 감광막의 비노광 영역에도 빛이 들어가는 현상인 플래어를 정량적으로 측정함으로써, 효과적인 리소그라피 시뮬레이션(Lithography Simulation) 및 감광막의 선택으로 반도체 제조공정 수율 소자의 신뢰성을 향상시킬 수 있는 반도체 노광장비의 플레어 측정방법에 관한 것이다.The present invention relates to a flare measuring method of a semiconductor exposure equipment, in particular a flare which is a phenomenon in which light enters a non-exposed area of the photosensitive film due to scattering of light due to a lens defect in the exposure equipment. By measuring quantitatively, the present invention relates to a flare measuring method of a semiconductor exposure apparatus that can improve the reliability of a yield device of a semiconductor manufacturing process by effective lithography simulation and selection of a photoresist.

반도체 노광장비에 있어서, 플레어는 장비 고유의 렌즈결함으로 인하여 마스크상에서 크롬으로 덮여있는 부분에 해당하는, 비노광지역의 웨이퍼가 노광되어지는 현상을 말한다.In semiconductor exposure equipment, flare refers to a phenomenon in which a wafer in a non-exposed area, which is a portion covered with chromium on a mask due to an inherent lens defect, is exposed.

상기의 현상은 노광장비 즉, 스테퍼(Stepper)내 렌즈 어레이(Lens array)에서의 결함으로 인하여 입사된 빛이 산란되어 발생하며, 전체적인 광의 세기(Intensity)를 높여주는 결과를 초래하여 에이리얼 이미지(Aerial Image) 콘트러스트(Contrast)를 저하시킨다.The above phenomenon occurs due to scattering of incident light due to defects in the lens array in the exposure apparatus, that is, stepper, resulting in an increase in the overall intensity of the light. Image) Decreases contrast.

따라서 스테퍼나 스캐너(Scaner)와 같은 노광장비에 있어서, 정확한 플레어 값을 아고 있을 경우에는 리소그라피 시뮬레이션이나 감광막 선택에 큰 도움이 된다.Therefore, in exposure equipment such as steppers and scanners, it is very helpful for lithography simulation and photoresist selection when the exact flare value is known.

제1도는 플레어 수치변화에 따른 에이리얼 이미지의 변화를 도시한 그래프이다.FIG. 1 is a graph showing the change in the Ariel image according to the change in the flare number.

상기 도면에 도시된 바와 같이, 플레어가 증가함에 따라 전체적인 에이리얼 이미지가 증가함을 알 수 있다.As shown in the figure, it can be seen that as the flare increases, the overall aerial image increases.

그러나 플레어의 정확한 값을 측정할 수 있는 방법이 현재까지 제시되어 지지 않고 있으며, 알수 있는 자료로는 노광장비에 구비되어져 있는 플레어 수치밖에 없다.However, the method to measure the flare's exact value has not been suggested so far, and the only data available is the flare value of the exposure equipment.

그리하여 특수한 조건에 의거한 예컨데, 특정 감광막, 애퍼처 종류, 패턴 사이즈등등에서의 현실적인 플레어 수치를 알 수 없는 문제점이 있다.Thus, there is a problem in that the actual flare value in a specific photoresist film, aperture type, pattern size, etc. is not known under special conditions.

따라서 본 발명은 상기의 문제점을 해결하기 위하여 노광이 이루어진 부위의 감광막을 완전히 제거하기 위한 쓰레솔드 에너를 구하고, 또한 노광되지 않은 부위의 감광막을 노광시키기 위한 플레어 에너지를 측정하여 그 비를 구함으로써 정확한 플레어 수치를 산정할 수 있는 반도체 노광장비의 플레어 측정방법을 제공함에 그 목적이 있다.Therefore, in order to solve the above problem, the present invention obtains a threaded energy for completely removing the photoresist film of the exposed part, and measures the flare energy for exposing the photoresist film of the unexposed part to determine the ratio. It is an object of the present invention to provide a flare measuring method of a semiconductor exposure apparatus that can calculate the flare value.

제1도는 플레어 수치변화에 따른 에이리얼 이미지의 변화를 도시한 그래프.1 is a graph showing the change in the image of the reality according to the change in the flare number.

제2도는 본 발명의 방법에 따른 플레어 산출식을 이용하여 노광장비의 플레어를 장비와 패턴 사이별로 측정한 값을 도시한 그래프.Figure 2 is a graph showing the value measured for each flare of the exposure equipment between the equipment and the pattern using the flare calculation formula according to the method of the present invention.

상기 목적을 달성하기 위하여 본 발명은, 노광장비의 플레어 측정방법에 있어서, 일정 크기 이상의 소정 패턴에 대하여 노광된 지역의 감광막을 현상하는 데 소요되는 쓰레솔드 에너지를 측정하는 단계와, 노광 에너지를 증가시켜 노광되지 않은 감광막을 현상하는 데 소요되는 플레어 에너지를 측정하는 단계와, 상기 쓰레솔드 에너지에 대한 플레어 에너지의 비값을 플레어 수치로 산정하는 것을 특징으로 하는 반도체 노광장비의 플레어 측정방법을 제공한다.In order to achieve the above object, the present invention, in the flare measuring method of the exposure equipment, measuring the threshold energy required to develop the photosensitive film of the exposed area for a predetermined pattern of a predetermined size or more, and increase the exposure energy; And measuring flare energy required to develop the unexposed photoresist film, and calculating a flare value of the flare energy with respect to the threaded energy as a flare value.

이하, 첨부된 도면을 참조하여 본 발명의 적합한 실시예에 대한 상세한 설명을 하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

본 발명의 방법에 따른 반도체 노광장비에서의 플래어 수치를 산정하는 식은 다음과 같다.The equation for calculating the flare value in the semiconductor exposure apparatus according to the method of the present invention is as follows.

Figure kpo00002
Figure kpo00002

상기 식(1)에서 나타내고 있는 것과 같이, 반도체 노광장비의 플레어를 측정하기 위해서는 노광이 이루어진 부위의 감광막을 완전히 제거하는 데 소요되는 쓰레솔드 에너지를 구하고, 또한 노광되지 않은 부위의 감광막을 노광시키기 위한 플레어 에너지를 측정하여 그 비를 구함으로써 플레어 수치를 산정하는 것이다.As shown in Equation (1), in order to measure the flare of the semiconductor exposure equipment, the thrust energy required to completely remove the photoresist film of the exposed area is obtained, and the photoresist film of the unexposed part is exposed. The flare value is calculated by measuring the flare energy and calculating its ratio.

제2도는 상기 식(1)을 이용한 본 발명의 방법에 따라 노광장비의 플레어를 장비와 패턴 사이별로 측정한 값을 도시한 그래프이다.2 is a graph showing the measured values of the flare of the exposure equipment according to the method of the present invention using the above equation (1) between the equipment and the pattern.

플레어 측정을 위한 본 실시예에서는, 노광장비로 스테퍼(DUV 노광 장비)와 스캐너(i-라인 노광장비)를 사용하였다.In this embodiment for flare measurement, a stepper (DUV exposure equipment) and a scanner (i-line exposure equipment) were used as the exposure equipment.

본 측정에 사용된 패턴은 정사각형 모양으로서 한변의 길이가 스캐너에서는 50,25,18.75,9.375㎛, 스테퍼에서는 40,20,15,7.5㎛이다.The pattern used for this measurement is square in shape, and the length of one side is 50, 25, 18.75, 9.375 mu m in the scanner and 40, 20, 15, 7.5 mu m in the stepper.

먼저, 노광지역의 감광막이 완전히 현상되는 데 소요되는 쓰레솔드 에너지(Eth)를 측정한 결과, 스캐너는 8.25mJ/C㎡, 스테퍼의 경우는 290mili-second였다.First, as a result of measuring the threshold energy (E th ) required to fully develop the photoresist in the exposure area, the scanner was 8.25 mJ / Cm 2 and the stepper was 290 mili-second.

그리고 각 패턴의 크기에 따른 플레어 에너지를 구한 결과는 다음 표 1과 같다.The results of obtaining flare energy according to the size of each pattern are shown in Table 1 below.

[표 1]TABLE 1

Figure kpo00003
Figure kpo00003

상기 제2도에 도시된 그래프를 참조하면, 렌즈 어래이가 복잡한 스테퍼가 스캐너에 비하여 플레어 수치가 높은 것을 알 수 있다.Referring to the graph shown in FIG. 2, it can be seen that a stepper having a complicated lens array has a higher flare value than a scanner.

또한 패턴의 사이즈가 작을 수록 플레어가 급격히 증가함을 볼 수 있는 데, 이는 플레어에 의한 현상보다는 과노광(over expose)에 의한 현상이므로 패턴 사이즈 300μ㎡이상에서의 플래어 수치가 의미가 있다.In addition, as the size of the pattern is smaller, it can be seen that the flare increases sharply, which is caused by over-exposure rather than by the flare, so the flare value in the pattern size of 300 μm 2 or more is significant.

이상 상술한 바와 같이, 본 발명의 방법에 따라 노광장비의 플레어를 정량적으로 측정할 수 있도록 함으로써 리소그라피 시뮬레이션에 효과적으로 이용할 수 있으며 감광막의 감응도(sensitivity)와 비교하여 적당한 감광막을 선택할 수 있다. 또한 노광장비의 플레어를 정확히 알 수 있으므로 효과적인 리소그라피 시뮬레이션과 감광막의 선택으로 공정수행에 따른 비용과 시간을 절감할 수 있다.As described above, the flare of the exposure apparatus can be quantitatively measured according to the method of the present invention, which can be effectively used for lithography simulation, and an appropriate photoresist film can be selected in comparison with the sensitivity of the photoresist film. In addition, the flare of the exposure equipment can be accurately known, and thus, the effective lithography simulation and the selection of the photoresist film can reduce the cost and time according to the process.

Claims (3)

노광장비의 플레어 측정방법에 있어서, 일정 크기 이상의 소정 패턴에 대하여 노광된 지역의 감광막을 현상하는 데 소요되는 쓰레솔드 에너지를 측정하는 단계와, 노광 에너지를 증가시켜 노광되지 않은 감광막을 현상하는 데 소요되는 플레어 에너지를 측정하는 단계와, 상기 쓰레솔드 에너지에 대한 플레어 에너지의 비값을 플레어 수치로 산정하는 것을 특징으로 하는 반도체 노광장비의 플레어 측정방법.A flare measuring method of an exposure apparatus, the method comprising: measuring the threshold energy required to develop a photoresist film in an exposed area for a predetermined pattern of a predetermined size or more; and developing the unexposed photoresist film by increasing the exposure energy. And measuring a flare energy to be calculated as a flare value of the ratio of the flare energy to the threshold energy. 제1항에 있어서, 상기 산정된 플래어 수치는 아래의 식으로 계산되는 것을 특징으로 하는 반도체 노광장비의 플레어 측정방법.The flare measuring method of claim 1, wherein the calculated flare value is calculated by the following equation.
Figure kpo00004
Figure kpo00004
 제1항에 있어서, 상기 감광막은 포지티브 또는 네거티브 감광막인 것을 특징으로 하는 반도체 노광장비의 플레어 측정방법.The flare measuring method of claim 1, wherein the photosensitive film is a positive or negative photosensitive film.
KR1019970015591A 1997-04-25 1997-04-25 Flare measuring method KR100253590B1 (en)

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Publication number Priority date Publication date Assignee Title
KR100788345B1 (en) 2005-11-24 2008-01-02 동부일렉트로닉스 주식회사 Measurement Method for Flare Effect in Photo Lithography Process

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KR100300874B1 (en) * 1998-09-09 2001-10-19 박종섭 Method for quantitatively measuring the effects of additives added to chemically amplified photosensitizers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100788345B1 (en) 2005-11-24 2008-01-02 동부일렉트로닉스 주식회사 Measurement Method for Flare Effect in Photo Lithography Process

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