KR100252749B1 - Method for fabrication of standard wafer used in thickness measurement - Google Patents

Method for fabrication of standard wafer used in thickness measurement Download PDF

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KR100252749B1
KR100252749B1 KR1019970029653A KR19970029653A KR100252749B1 KR 100252749 B1 KR100252749 B1 KR 100252749B1 KR 1019970029653 A KR1019970029653 A KR 1019970029653A KR 19970029653 A KR19970029653 A KR 19970029653A KR 100252749 B1 KR100252749 B1 KR 100252749B1
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thickness
electron microscope
standard wafer
oxide film
natural oxide
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KR1019970029653A
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Korean (ko)
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KR19990005456A (en
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김재동
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김영환
현대전자산업주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: A method for fabrication of a standard wafer used in thickness measurement is provided to enhance the precise in measuring by fabricating the standard wafer in considering of the growth period of a natural oxide, and to be able to measure the accurate thickness of the wafer using a transmissive electron microscope together with a nondestructive method. CONSTITUTION: An oxide or nitride(11) is grown on a substrate(10). Then, a natural oxide(12) is grown on the oxide or nitride and then the thickness of the resultant is measured using a thickness measuring device. Next, polysilicon(13) is deposited on the natural oxide and the thickness of the resultant is measured using a transmissive electron microscope. Then, simultaneous equations are obtained by using a transforming method between the measurement values of the thickness measuring device and transmissive electron microscope. Finally, a real thickness is measured a nondestructive method using the simultaneous equations.

Description

두께 측정 표준 웨이퍼 제조 방법Thickness Measurement Standard Wafer Manufacturing Method

본 발명은 두께 측정 표준 웨이퍼(wafer) 제조 방법에 관한 것으로, 특히 반도체 제조 과정 중에 막의 정확한 두께를 측정하기 위한 표준 웨이퍼 제조 방법에 관한 것이다.TECHNICAL FIELD The present invention relates to a thickness measurement standard wafer manufacturing method, and more particularly, to a standard wafer manufacturing method for measuring an accurate thickness of a film during a semiconductor manufacturing process.

두께 측정 표준 웨이퍼는 반도체 제조 과정 중에 요구되는 각종 막(film)의 두께를 정확하게 측정하고, 두께 측정장비의 교정 및 점검 등에 사용하기 위하여 제작하고 있다.Thickness Measurement Standard wafers are manufactured to accurately measure the thickness of various films required during the semiconductor manufacturing process and to be used for calibration and inspection of thickness measurement equipment.

그러나, 종래의 두께 측정 표준 웨이퍼 제작은 두께 측정장비에 의존하여 측정한 결과를 사용하기 때문에 정확도에 한계가 있으며, 일부분의 막 두께를 측정하는 투과형 전자현미경(TEM)은 파괴적인 방법이라 실제 표준 웨이퍼로 활용할 수가 없다.However, the conventional thickness measurement standard wafer fabrication has a limitation in accuracy because it uses the measurement results depending on the thickness measurement equipment, and the transmission electron microscope (TEM) measuring a portion of the film thickness is a destructive method. Can't take advantage of it.

상기와 같은 문제점을 해결하기 위한 본 발명은 막 두께 측정의 정확도 향상을 위해 투과형 전자현미경을 사용하여 실제 두께를 측정하고, 투과형 전자현미경의 파괴적 방법을 보완하고자 비파괴적 측정 방법인 기존 두께 측정장비로 두께를 측정하여 두 장비간의 전환 방정식을 도출해 두께 측정 표준 웨이퍼 제조 방법을 제공하는데 그 목적이 있다.The present invention for solving the above problems is to measure the actual thickness using a transmission electron microscope in order to improve the accuracy of the measurement of the film thickness, and to the conventional thickness measuring equipment that is a non-destructive measurement method to supplement the destructive method of the transmission electron microscope The aim is to provide a thickness measurement standard wafer manufacturing method by measuring the thickness to derive the conversion equation between the two devices.

도 1a내지 도 1c는 본 발명의 실시예에 따른 두께 측정 표준 웨이퍼 제조 과정을 도시한 단면도.1A-1C are cross-sectional views illustrating a thickness measurement standard wafer fabrication process in accordance with an embodiment of the present invention.

도 2는 투과형 전자현미경과 두께 측정장비로 두께를 측정한 그래프.Figure 2 is a graph measuring the thickness with a transmission electron microscope and thickness measuring equipment.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 실리콘 기판 11 : 질화막이나 산화막10 silicon substrate 11: nitride film or oxide film

12 : 자연 산화막 13 : 폴리 실리콘12: natural oxide film 13: polysilicon

상기 목적을 달성하기 위한 본 발명의 두께 측정 표준 웨이퍼 제조 방법은 기판에 산화막이나 질화막을 성장한 후 자연 산화막을 성장하여 두께 측정장비로 두께를 측정하는 단계와; 상기 자연 산화막 상에 폴리 실리콘을 증착하여 투과형 전자현미경 장비로 두께를 측정하는 단계와; 상기 두 장비간의 측정 값을 전환하는 방정식을 구하여 비파괴적인 방법으로 실제 두께를 산출하는 것을 특징으로 한다.The thickness measurement standard wafer manufacturing method of the present invention for achieving the above object comprises the steps of growing an oxide film or a nitride film on a substrate and growing a natural oxide film to measure the thickness with a thickness measuring equipment; Depositing polysilicon on the natural oxide film to measure thickness with a transmission electron microscope device; It is characterized by calculating the actual thickness in a non-destructive manner by obtaining an equation for converting the measured value between the two devices.

이하, 첨부된 도면을 참고하여 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

먼저, 도 1a와 같이 실리콘 기판(10)에 질화막이나 산화막(11)을 50Å을 성장시킨 후, 도 1b와 같이 질화막이나 산화막(11) 상에 최소 1개월 이상 자연 산화막(12)을 성장시킨 후 두께 측정장비로 두께를 측정한다.First, as shown in FIG. 1A, 50 nm of a nitride film or an oxide film 11 is grown on the silicon substrate 10, and then a natural oxide film 12 is grown on the nitride film or the oxide film 11 for at least one month as shown in FIG. 1B. Measure the thickness with a thickness measuring instrument.

이어서, 도 1c와 같이 자연 산화막(11) 상에 폴리 실리콘(13)을 1000Å을 증착하고, 폴리 실리콘(13)을 증착한 웨이퍼를 파괴하여 투과형 전자현미경으로 정확한 실제 두께를 측정한다. 이때 폴리 실리콘을 증착하는 것은 투과형 전자 현미경으로 박막의 두께를 측정할 때 시료 준비상의 문제로 인하여 측정하고자 하는 막이 손상되는데 이를 방지하고자 보호막으로서 증착한다.Subsequently, 1000 Å of polysilicon 13 is deposited on the natural oxide film 11 as shown in FIG. 1C, and the wafer on which the polysilicon 13 is deposited is destroyed to measure an accurate actual thickness with a transmission electron microscope. In this case, the polysilicon is deposited as a protective film to prevent damage to the film to be measured due to problems in sample preparation when measuring the thickness of the thin film with a transmission electron microscope.

동일한 웨이퍼에 투과형 전자현미경으로 측정한 두께와 두께 측정장비로 측정한 두께를 도 2와 같이 그래프를 그리고 두 장비간의 전환 방정식을 산출한다.On the same wafer, the thickness measured by the transmission electron microscope and the thickness measured by the thickness measuring device are graphed as shown in FIG. 2, and a conversion equation between the two devices is calculated.

상기 전환 방정식은 투과형 전자현미경과 두께 측정장비로 두께를 측정한 그래프로부터 각각 y = ax + b와 y' = ax' + b의 방정식을 얻고, a, b값을 산출하여 최종적으로 y = ax + b의 전환 방정식을 얻는다. 상기 식에서 x는 두께 측정장비 값이고, y는 실제 두께 값인 투과형 전자현미경 값이다.The conversion equation obtains the equations of y = ax + b and y '= ax' + b, respectively, from the graphs of thickness measurements with a transmission electron microscope and a thickness measuring instrument, and finally calculates a, b values and finally y = ax + Obtain the conversion equation for b. In the above formula, x is a thickness measuring instrument value, and y is a transmission electron microscope value which is an actual thickness value.

상기 산출한 전환 방정식을 이용하여 두께 측정장비로 측정한 도 1b의 웨이퍼에 대해 비파괴적인 방법으로 실제 두께를 산출한다.Using the calculated conversion equation, the actual thickness is calculated in a non-destructive manner for the wafer of FIG.

이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명이 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능함이 본 발명이 속하는 기술분야에서 통상의 지식을 가진자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiment and the accompanying drawings, and various substitutions, modifications, and changes are possible within the scope of the present invention without departing from the technical idea. It will be evident to those who have knowledge of.

본 발명은 막 성장후 자연 산화막이 자랄 수 있는 기간을 고려한 후(1달 이상) 표준 웨이퍼를 제작함으로써 정확도를 향상시키고, 투과형 전자현미경을 이용하면서도 비파괴적인 방법으로 막의 정확한 두께를 측정할 수 있는 이점이 있다.The present invention improves the accuracy by fabricating a standard wafer after considering the growth period of the natural oxide film after the film growth (more than one month), and can measure the exact thickness of the film by a non-destructive method while using a transmission electron microscope. There is this.

Claims (1)

두께 측정 표준 웨이퍼 제조 방법에 있어서,Thickness measurement standard wafer manufacturing method, 기판에 산화막이나 질화막을 성장하는 단계와;Growing an oxide film or a nitride film on the substrate; 상기 산화막이나 질화막 상에 자연 산화막을 성장하여 두께 측정장비로 두께를 측정하는 단계와;Growing a natural oxide film on the oxide film or nitride film and measuring the thickness with a thickness measuring device; 상기 자연 산화막 상에 폴리 실리콘을 증착하여 투과형 전자현미경 장비로 두께를 측정하는 단계와;Depositing polysilicon on the natural oxide film to measure thickness with a transmission electron microscope device; 상기 두께 측정장비와 전자현미경 장비간의 측정 값을 전환할 수 있는 방법으로 연립방정식을 구하는 단계와;Obtaining a system of equations in such a way as to convert the measured value between the thickness measuring device and the electron microscope device; 상기 두께 측정장비와 전자현미경 장비간의 전환 방정식을 이용하여 비파괴적인 방법으로 실제 두께를 산출하는 것을 특징으로 하는 두께 측정 표준 웨이퍼 제조 방법.Thickness measurement standard wafer manufacturing method characterized in that for calculating the actual thickness in a non-destructive manner using the conversion equation between the thickness measurement device and the electron microscope device.
KR1019970029653A 1997-06-30 1997-06-30 Method for fabrication of standard wafer used in thickness measurement KR100252749B1 (en)

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KR20020086760A (en) * 2001-05-10 2002-11-20 동부전자 주식회사 Reference wafer for calibration and method for calibrating a apparatus for thickness measurement using it
KR20030021299A (en) * 2001-09-05 2003-03-15 동부전자 주식회사 Method For Certifying Film Thickness Standard Reference Material For Film Thickness Measuring Equipment
KR100699859B1 (en) * 2005-08-11 2007-03-27 삼성전자주식회사 Reference wafer for calibrating a semiconductor equipment
KR102365983B1 (en) * 2019-10-31 2022-02-23 한국표준과학연구원 Method of Measuring Thickness of a Ultra-thin Film

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