KR100237753B1 - Method of removing dust of semiconductor etching machine - Google Patents
Method of removing dust of semiconductor etching machine Download PDFInfo
- Publication number
- KR100237753B1 KR100237753B1 KR1019960071388A KR19960071388A KR100237753B1 KR 100237753 B1 KR100237753 B1 KR 100237753B1 KR 1019960071388 A KR1019960071388 A KR 1019960071388A KR 19960071388 A KR19960071388 A KR 19960071388A KR 100237753 B1 KR100237753 B1 KR 100237753B1
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- South Korea
- Prior art keywords
- etching
- contact hole
- etching apparatus
- ceiling
- polymers
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Abstract
1. 청구범위에 기재된 발명이 속한 기술 분야1. TECHNICAL FIELD OF THE INVENTION
반도체 소자 제조 공정Semiconductor device manufacturing process
2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention
반도체 소자 제조시, 금속층간 콘택홀을 형성하기 위해 고밀도 플라즈마 식각 장치를 이용하는 경우, 노출된 금속층으로부터 장치의 천장부분에 폴리머가 쌓이게 되며, 이 폴리머가 소정의 두께 이상으로 쌓이게 되면, 콘택홀이 완전히 형성될 때까지 식각 공정이 진행되지 않고 중간에 정지되는 현상이 발생하는 문제점을 해결하고자 함.In the manufacture of semiconductor devices, when a high density plasma etching apparatus is used to form contact holes between metal layers, polymers are accumulated in the ceiling of the device from the exposed metal layer, and when the polymers are stacked above a predetermined thickness, the contact holes are completely It is intended to solve the problem that the etching process does not proceed until it is formed and stops in the middle.
3. 발명의 해결방법의 요지3. Summary of Solution to Invention
콘택홀 형성을 위한 식각 공정을 완료한 다음, 아르곤 및 염소 등의 추가 가스를 이용하여, 스퍼터링 방식으로 누적된 폴리머를 제거하는 공정을 주기적으로 실시하므로써, 소자의 수율을 향상시키고, 장치의 수명을 연장시키고자 함.After the etching process for forming the contact hole is completed, the process of periodically removing the accumulated polymer by sputtering using additional gas such as argon and chlorine improves the yield of the device and extends the life of the device. To extend.
4. 발명의 중요한 용도4. Important uses of the invention
고집적 반도체 소자 제조에 이용됨.Used to manufacture highly integrated semiconductor devices.
Description
본 발명은 일반적으로 반도체 소자 제조 장치에 관한 것으로서, 특히, 반도체 소자 제조 공정중 고밀도 플라즈마 식각 장치의 오염을 제거하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to semiconductor device manufacturing apparatuses, and more particularly, to a method for removing contamination of a high density plasma etching apparatus during a semiconductor device manufacturing process.
반도체 소자 제조 공정중 다층 금속 배선 구조에서 하부 금속층과 상부 금속층을 전기적으로 접속하기 위한 콘택홀(또는 비아홀) 형성 공정이 요구된다. 이를 보다 구체적으로 살펴보면, 제3도에 도시된 바와 같이, 소정의 하부층 및 절연막이 형성되어 있는 실리콘 기판(11)위에 하부 금속배선으로 알루미늄막(12)을 형성하고, 그 위에 반사방지막으로 TiN막(13)을 형성한 다음, 그 위에 층간절연막(14)을 형성한 후, 콘택홀을 형성하기 위한 소정의 포토레지스트 패턴(15)을 형성한다. 다음에는, 하부 알루미늄막(12)이 노출될 정도로 층간절연막(4)으로 사용된 산화막을 적정 수준으로 식각해서 콘택홀(16)을 형성하게 된다. 그런데, 이러한 콘택홀 형성을 위한 식각시, 고밀도 플라즈마(High Density Plasma) 식각 장치가 이용되게 되는데, 이러한 식각 장치의 주요 구성요소를 보면, 제1도에 도시된 바와 같이, 공정 쳄버(1)와, 웨이퍼를 올려놓기 위한 척(2) 및 개폐를 위한 뚜껑(3)으로 구성되어 있으며, 이 뚜껑(3)의 하부에는 공정 진행시 플루오르를 포착하기 위한 실리콘으로 된 지붕 천장(Silicon Roof Slab)(4)이 형성되어 있다. 그런데, 제2도에 도시된 바와 같이, 이 천장(4)에는 하부 금속층을 건식식각할 때 발생되는 Ti, C, F, Al 등의 원자의 결합체인 폴리머에 의한 침투오염이 발생하게 된다. 이러한 폴리머가 천장 두께의 1/10 이상 쌓이게 되면, 플루오르 포착 역할을 제대로 수행하지 못하게 되므로, 제3도에 도시된 바와 같이, 식각 공정이 완전하게 수행되지 못하고 중간에 정지되는 현상(Etch Stop)이 발생하여 콘택홀이 완전하게 형성되지 않는다는 문제점이 있었다.In the semiconductor device manufacturing process, a contact hole (or via hole) forming process for electrically connecting the lower metal layer and the upper metal layer in a multilayer metal wiring structure is required. In more detail, as shown in FIG. 3, the aluminum film 12 is formed on the silicon substrate 11 on which the predetermined lower layer and the insulating film are formed, using the lower metal wiring, and the TiN film is formed on the TiN film. (13) is formed, then an interlayer insulating film 14 is formed thereon, and then a predetermined photoresist pattern 15 for forming a contact hole is formed. Next, the contact hole 16 is formed by etching the oxide film used as the interlayer insulating film 4 to an appropriate level so that the lower aluminum film 12 is exposed. However, during the etching for forming the contact hole, a high density plasma (High Density Plasma) etching apparatus is used. Looking at the main components of such an etching apparatus, as shown in Figure 1, the process chamber 1 and , A chuck 2 for placing a wafer and a lid 3 for opening and closing a wafer, and a lower part of the lid 3 includes a silicon roof slab for capturing fluorine during the process. 4) is formed. However, as shown in FIG. 2, in the ceiling 4, penetration contamination by a polymer, which is a combination of atoms such as Ti, C, F, and Al, generated when dry etching the lower metal layer is generated. If these polymers are accumulated more than 1/10 of the thickness of the ceiling, the fluorine capture role is not properly performed. As shown in FIG. 3, the etching process may not be performed completely and stops in the middle. There was a problem that the contact hole is not formed completely.
따라서, 전술한 문제점을 해결하기 위해 안출된 본 발명은, 식각 공정에 의해 발생되는 폴리머에 의한 식각 장치의 오염을 추가 가스를 이용하여 효과적으로 제거할 수 있는 방법을 제공하는 것을 목적으로 한다.Accordingly, an object of the present invention is to provide a method capable of effectively removing contamination of an etching apparatus by a polymer generated by an etching process by using an additional gas.
제1도는 일반적인 고밀도 플라즈마 식각 장치의 개략적 구성도.1 is a schematic diagram of a general high density plasma etching apparatus.
제2도는 식각 공정에 의해 발생되는 폴리머가 제1도의 장치의 뚜껑의 천장에 침투오염되는 현상을 도시하는 도면.FIG. 2 shows a phenomenon in which the polymer generated by the etching process is penetrated into the ceiling of the lid of the apparatus of FIG. 1. FIG.
제3도는 제1도의 장치의 뚜껑 천장의 오염에 의해 발생하는 식각 정지 현상을 도시하는 도면.FIG. 3 shows an etch stop phenomenon caused by contamination of the lid ceiling of the apparatus of FIG. 1. FIG.
제4도는 본 발명에 따라 제1도의 장치의 뚜껑 천장에 침투된 오염을 제거하는 원리를 도시하는 도면.4 illustrates the principle of removing contamination penetrated into the lid ceiling of the apparatus of FIG. 1 in accordance with the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 공정 쳄버 2 : 척1: process chamber 2: chuck
3 : 뚜껑 4 : 지붕 천장3: lid 4: roof ceiling
11 : 반도체 기판 12 : 알루미늄막11 semiconductor substrate 12 aluminum film
13 : TiN막 14 : 층간절연막13 TiN film 14 Interlayer insulating film
15 : 포토레지스트 16 : 콘택홀15 photoresist 16 contact hole
본 발명의 한 실시예에 따른 반도체 식각 장치의 오염 제거 방법에 있어서는, 반도체 소자의 콘택홀 형성을 위한 식각 공정을 완료한 후, 아르곤 및 염소 가스를 이용하여, 스퍼터링 방식으로 공정 쳄버의 내부에 부착된 금속 오염 물질을 제거하는 단계를 주기적으로 실시하는 것을 특징으로 한다.In the decontamination method of the semiconductor etching apparatus according to an embodiment of the present invention, after completing the etching process for forming the contact hole of the semiconductor element, it is attached to the inside of the process chamber by the sputtering method, using argon and chlorine gas And periodically removing the contaminated metal contaminants.
이제, 본 발명은 첨부 도면을 참조하여 양호한 실시예에 대해 상세하게 설명되게 된다. 먼저, 콘택홀 형성을 위한 식각 공정까지는 제3도를 참조하여 전술한 바와 같이, 종래와 동일한 방식으로 진행하고, 공정 웨이퍼를 공정 쳄버로부터 언로딩한다. 다음에, 공정 웨이퍼가 아닌 배어 웨이퍼(bare wafer)를 제4도에 도시된 바와 같이 적재한 다음, 아르곤(Ar)이나 염소(Cl) 가스를 이용하여, 제2도에 도시된 바와 같은 알루미늄 폴리머 등의 금속 오염 물질을 제4도에 도시된 바와 같이 스퍼터링 방식으로 제거한다. 이 과정은 스퍼터링의 원리를 이용한 것으로서, 제4도에 도시된 바와 같이 아르곤이나 염소 이온이 공정 쳄버의 천장에 쌓인 금속오염물질에 충돌하게 되면, 알루미늄막 등의 이온이 떨어져 나와 척(2) 위에 놓인 배어 웨이퍼(5)에 증착되게 된다. 이러한 과정을 적절한 시간 동안 실시하게 되면, 천장(4)에 쌓여 있는 오염 물질이 거의 완전하게 제거되게 되며, 따라서 콘택홀 형성을 위한 식각 공정시 제3도에 도시된 바와같이 식각이 정지되는 현상이 발생하는 것을 방지할 수 있다. 반도체 소자 제조 공정중 이러한 공정 쳄버의 오염 제거 공정을 주기적으로 실시하게 되면, 소자의 수율 향상에 기여할 수 있다.The invention will now be described in detail with reference to the preferred embodiments with reference to the accompanying drawings. First, as described above with reference to FIG. 3, the etching process for forming the contact hole is performed in the same manner as in the prior art, and the process wafer is unloaded from the process chamber. Next, a bare wafer, rather than a process wafer, is loaded as shown in FIG. 4, and then, using argon (Ar) or chlorine (Cl) gas, an aluminum polymer as shown in FIG. Metal contaminants such as and the like are removed by sputtering as shown in FIG. This process uses the principle of sputtering. As shown in FIG. 4, when argon or chlorine ions collide with the metal contaminants accumulated in the ceiling of the process chamber, ions such as aluminum films are released to the chuck (2). It is deposited on the laid bare wafer 5. If this process is performed for a suitable time, the contaminants accumulated on the ceiling 4 are almost completely removed, and thus, the etching stops as shown in FIG. 3 during the etching process for forming the contact hole. It can be prevented from occurring. If the decontamination process of the process chamber is periodically performed during the semiconductor device manufacturing process, it can contribute to the improvement of the yield of the device.
반도체 장치 제조시 전술한 바와 같은 본 발명을 이용하므로써, 반도체 소자의 콘택홀 형성시 식각이 정지되는 현상이 발생하는 것을 방지할 수 있으며, 따라서 소자의 수율을 향상시킬 수 있을 뿐만 아니라 식각 장비의 수명도 연장시킬 수 있는 효과가 있다.By using the present invention as described above in the manufacture of a semiconductor device, it is possible to prevent the phenomenon that the etching is stopped when forming the contact hole of the semiconductor device, thereby improving the yield of the device as well as the life of the etching equipment There is also an effect that can be extended.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960071388A KR100237753B1 (en) | 1996-12-24 | 1996-12-24 | Method of removing dust of semiconductor etching machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960071388A KR100237753B1 (en) | 1996-12-24 | 1996-12-24 | Method of removing dust of semiconductor etching machine |
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| Publication Number | Publication Date |
|---|---|
| KR19980052400A KR19980052400A (en) | 1998-09-25 |
| KR100237753B1 true KR100237753B1 (en) | 2000-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019960071388A KR100237753B1 (en) | 1996-12-24 | 1996-12-24 | Method of removing dust of semiconductor etching machine |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100720533B1 (en) | 2005-12-30 | 2007-05-22 | 동부일렉트로닉스 주식회사 | Method for cleaning after etching process |
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1996
- 1996-12-24 KR KR1019960071388A patent/KR100237753B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100720533B1 (en) | 2005-12-30 | 2007-05-22 | 동부일렉트로닉스 주식회사 | Method for cleaning after etching process |
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| KR19980052400A (en) | 1998-09-25 |
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