KR100212722B1 - Thin film etching method - Google Patents
Thin film etching method Download PDFInfo
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- KR100212722B1 KR100212722B1 KR1019950032230A KR19950032230A KR100212722B1 KR 100212722 B1 KR100212722 B1 KR 100212722B1 KR 1019950032230 A KR1019950032230 A KR 1019950032230A KR 19950032230 A KR19950032230 A KR 19950032230A KR 100212722 B1 KR100212722 B1 KR 100212722B1
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- 238000005530 etching Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 239000002245 particle Substances 0.000 claims abstract description 20
- 239000012530 fluid Substances 0.000 claims abstract description 8
- 238000005507 spraying Methods 0.000 claims abstract description 7
- 238000005192 partition Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 3
- 239000000243 solution Substances 0.000 abstract description 14
- 238000001312 dry etching Methods 0.000 abstract description 9
- 238000005488 sandblasting Methods 0.000 abstract description 8
- 238000001039 wet etching Methods 0.000 abstract description 8
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- ing And Chemical Polishing (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
본 발명은 박막을 선별적으로 식각시키는 신규한 방법을 개시한다.The present invention discloses a novel method for selectively etching thin films.
에칭액을 사용하는 웨잇에칭법은 식각속도가 빠르고 저렴하나 정확한 식각이 불가능하고, 식각입자를 분사하는 샌드블래스팅법등 드라이 에칭법은 정확한 식각은 사용하나 식각속도가 느리고 고가의 서리가 필요한 문제가 있었다.Although the wet etching method using etching solution is fast and cheap, accurate etching is impossible, and dry etching method such as sandblasting method of spraying etching particles uses accurate etching, but the etching speed is slow and expensive frost is required. there was.
본 발명에서는 식각입자의 분사유체를 에칭액으로 하는 등의 방법으로 에칭액을 식각입자와 함께 분사되도록 함으로써, 드라이 에칭과 같은 정확한 식각이 웨잇에칭과 같이 고속으로 이루어지도록 하였다.In the present invention, the etching liquid is injected together with the etching particles by a method such as using the injection fluid of the etching particles as an etching solution, so that accurate etching such as dry etching is performed at high speed like wet etching.
Description
제1도는 인쇄에 의한 격벽형성과정을 보이는 단면도.1 is a cross-sectional view showing a partition formation process by printing.
제2도는 웨잇에칭 방법을 보이는 단면도.2 is a cross-sectional view showing a wet etching method.
제3도는 드라이 에칭 방법중 샌드볼래스팅법을 보이는 단면도.3 is a cross-sectional view showing the sandblasting method of the dry etching method.
제4도는 본 발명 식각방법을 보이는 단면도.4 is a cross-sectional view showing an etching method of the present invention.
제5도는 본 발명의 원리를 설명하는 확대 단면도이다.5 is an enlarged cross-sectional view illustrating the principle of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
S : 기판(substrate) L : 박막(薄膜)S: Substrate L: Thin Film
M : 마스크(mask) G : 식각입자(etching granule)M: mask G: etching granule
Q : 에칭액(etching solution)Q: etching solution
본 발명은 박막 소자의 제조에 관한 것으로, 특히 박막(薄膜)을 소정 패턴(pattern)으로 식각(蝕刻; etching)하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of thin film devices, and more particularly, to a method of etching a thin film in a predetermined pattern.
박막소자는 박막으로 된 기능층을 적층하여 소정의 기능을 수행하는 디바이스(device)를 구성한 소자로서, 반도체소자로부터 PDP나 LCD 등의 평면표시소자에 이르기까지 다양한 소자에 응용되고 있다.A thin film device is a device that constitutes a device that performs a predetermined function by stacking a thin film of functional layers, and is applied to various devices ranging from semiconductor devices to flat display devices such as PDPs and LCDs.
이러한 박막을 성막(聖幕)하는 방법으로는 인쇄법이나 스프레이(spray) 또는 스핀(spin) 도포 등의 후막(厚膜)법과, 증착(蒸着)이나 스퍼터링(sputtering) 등의 박막(薄膜)법이 사용되고 있다. 한편 박막을 소정패턴의 기능층으로 형성하는 방법으로는 박막자체를 소정패턴으로 형성하는 인쇄법과, 성막된 박막을 다시 소정패턴으로 형성하는 식각법이 주로 사용되고 있다. 이외에도 마스크(mask)를 통한 증착방법도 일부 사용되고 있다.As a method of forming such a thin film, a thick film method such as a printing method or spray or spin coating, and a thin film method such as vapor deposition or sputtering Is being used. As a method of forming a thin film into a functional layer of a predetermined pattern, a printing method of forming the thin film itself into a predetermined pattern and an etching method of forming the formed thin film into a predetermined pattern are mainly used. In addition, a deposition method using a mask is partially used.
여기서 인쇄법은 대표적인 후막법으로 대면적의 패턴의 용이하고 저렴하게 형성할 수 있어서 박막소자의 구성에 우선적으로 선호된다.Here, the printing method is a representative thick film method and can be easily and inexpensively formed in a large area pattern.
그러나 인쇄법은 수십 ㎛ 이하의 미세패턴의 형성이나 두꺼운 패턴의 형성은 곤란한 문제가 있다.However, the printing method has a problem that it is difficult to form fine patterns of several tens of micrometers or less or form thick patterns.
예를 들어 제1도에 도시된 바와 같이 플라즈마 표시소자(PDP)의 격벽(B)을 형성하는 예를 살펴보면, 격벽(B)은 PDP의 해상도 증가를 위해 좁은 피치(Pitch) 및 폭을 가져야 함에도 방전공간의 유지를 위해 상당히 큰 높이를 가져야 한다. 이와 같이 좁고 높은 격벽(B)은 1회의 인쇄로 얻을 수 없으므로 기판(S)상에 다수의 인쇄층(P1, P2, …)을 순차적으로 반복 인쇄 적층하여 형성하게 된다.For example, as shown in FIG. 1, the example in which the partition B of the plasma display device PDP is formed, although the partition B has to have a narrow pitch and width to increase the resolution of the PDP, It must have a fairly large height to maintain the discharge space. Since the narrow and high partition B cannot be obtained by one printing, a plurality of printing layers P1, P2, ... are sequentially formed on the substrate S by repeated printing lamination.
이러한 반복인쇄는 한 인쇄층(P1)의 인쇄후에 이를 건조시키고 다음 인쇄층(P2)을 아래 인쇄층(P1)에 정합(align)시켜 인쇄하는 번거로운 작업을 반복해야 하므로 많은 시간과 공수를 소요할뿐만 아니라, 인쇄층(P1, P2, …)를 잘 무너져 내리는등 미세 패턴으로 갈수록 공정이 어렵고 수율(收率)이 낮아지는 문제가 커진다.This repetitive printing requires a lot of time and labor since the cumbersome operation of printing after printing one printing layer (P1) and drying it and then aligning the next printing layer (P2) with the lower printing layer (P1). In addition, as the fine patterns, such as falling down the printed layers P1, P2, ..., the process becomes more difficult and the yield decreases.
인쇄법 다음으로 널리 사용되는 패턴 형성방법은 식각법인 바, 주로 사진식각법(photo lithography)이 사용되고 있다. 사진식각법은 제2도에 도시된 바와 같이 기판(S)상에 형성된 박막(L)상에 감광특성을 이용해 내식성(耐蝕性)의 마스크(M)를 소정패턴으로 형성한 뒤, 물 또는 산수용액 등의 에칭(etching)액 또는 현상액으로 마스크(M)사이의 박막(L) 부분을 선별적으로 식각시킴으로써 패턴을 형성하는 것이다.The next widely used pattern forming method is an etching method, and photolithography is mainly used. In the photolithography method, as shown in FIG. 2, after forming a mask M having a corrosion resistance using a photosensitive characteristic on a thin film L formed on a substrate S in a predetermined pattern, water or acid The pattern is formed by selectively etching the thin film L portion between the masks M with an etching solution or a developing solution such as an aqueous solution.
그런데 이러한 사진식각법에 있어서는 에칭액의 식각방향이 특정방향을 향하지 않고 모든 방향으로 식각되는 소위 등방성(等方性) 식각이므로 식각되는 단부가 라운딩(rounding)되거나 마스크(M)밑을 파고 들게 되어 정확한 에지(edge)의 패턴을 얻기 어렵게 된다.However, in such a photolithography method, the etching direction of the etching solution is a so-called isotropic etching that is etched in all directions instead of in a specific direction, so that the edges to be etched are rounded or dug under the mask (M). It is difficult to obtain an edge pattern.
이에 따라 이방성(異方性)식각을 수행하는 드라이 에칭(dry etching)법이 출현한 바, 이에 대해 상술한 사진식각법등 에칭액을 사용하는 식각법을 웨잇에칭(wet etching)법으로 구분한다.Accordingly, a dry etching method for performing anisotropic etching has emerged. The etching method using an etching solution such as the above-described photolithography method is divided into a wet etching method.
드라이 에칭법으로는 이온 스퍼터링(ion sputtering)이나 레이저(laser)조사법등이 있으나 이들은 임의의 패턴 형성에는 그다지 적합하지 못하여 샌드블래스팅(sand blasting)법이 주로 사용되고 있다.The dry etching method includes ion sputtering or laser irradiation, but they are not very suitable for arbitrary pattern formation, and sand blasting is mainly used.
샌드블래스팅법은 모래나 강제의 볼(ball) 또는 그리트(grit) 등의 식각입자를 분사하여, 녹을 제거하거나 모서리 죽이기 또는 광택 등을 얻는 기계공작법에서 발전한 것으로, 박막소자의 식각에는 주로 세라믹 소결체(ceramic 燒結體)로 된 세라믹 볼이 사용되고 있다.Sandblasting is a method developed by a mechanical method of spraying sand, steel balls or grit, which removes rust, kills edges, or polishes. Ceramic balls made of ceramic bodies are used.
이 방법은 제3도에 도시된 바와 같이 박막(L)상에 내마모성이 더 큰 마스크(M)를 소정패턴으로 형성하고, 그 상부에서 세라믹 볼 등의 식각입자(G)를 고압의 기체에 의해 분사하여 마스크(M) 사이의 박막(L) 부분을 식각해 내는 것이다.In this method, as shown in FIG. 3, a mask M having higher wear resistance is formed on the thin film L in a predetermined pattern, and the etching particles G such as ceramic balls are formed on the thin film L by a high pressure gas. By spraying, the portion of the thin film L between the masks M is etched away.
샌드블래스팅법은 식각이 식각입자(G)의 분사방향으로만 이루어지는 이방성식각이므로 깨끗하고 정확한 에지를 얻을 수 있는 장점을 가진다.The sand blasting method has an advantage of obtaining clean and accurate edges because the etching is anisotropic etching made only in the spraying direction of the etching particles (G).
그러나 격벽 등을 형성하는 박막(L)은 주성분이 SiO2등 내마모성이 매우 큰 재질로 이루어지므로 식각속도가 매우 느리며 적절한 마스크(M) 재질의 선택도 어려운 문제가 있다.However, since the thin film L forming the partition walls is made of a material having a very high wear resistance such as SiO 2 , the etching speed is very slow, and selection of an appropriate mask material is difficult.
또한 사진식각법등 웨잇에칭법이 별다른 설비를 요하지 않는 반면 센드블래스팅등 드라이 에칭법은 고가 대형이며 에너지 소비가 큰 설비를 요하므로 투자원가와 운용원가가 큰 문제가 있었다.In addition, the wet etching method such as photolithography does not require a special facility, whereas the dry etching method such as send blasting requires a large and expensive energy consumption facility, which has a large problem in investment cost and operating cost.
즉 웨잇에칭법은 빠르고 저렴한 반면 정확한 식각이 어려우며, 드라이 에칭법은 정확한 식각은 가능하나 식각속도가 느리고 원가가 큰 문제가 있었던 것이다.That is, while the wet etching method is fast and cheap, accurate etching is difficult, and the dry etching method is capable of accurate etching, but the etching speed is slow and the cost is large.
본 발명은 이와 같은 종래의 문제점을 감안하여 종래 샌드블래스팅 법의 단점을 해결하여 신속한 식각이 이루어질 수 있는 식각방법을 제공하는 것을 목적으로 한다.Disclosure of Invention It is an object of the present invention to provide an etching method in which rapid etching can be performed by solving the disadvantages of the conventional sandblasting method in view of such a conventional problem.
상술한 목적의 달성을 위해 본 발명 방법은 박막상에 내마모성 마스크를 소정패턴으로 형성하고 그 상부로부터 식각입자를 고압으로 분사하여 박막을 선별적으로 식각하는 방법에 있어서, 박막을 식각시키는 에칭액이 식각입자와 함께 분사되는 것을 특징으로 한다.In order to achieve the above object, the present invention is a method of selectively etching a thin film by forming a wear-resistant mask in a predetermined pattern on the thin film and spraying the etch particles at a high pressure from the top, the etching liquid for etching the thin film is etched It is characterized in that the spray with the particles.
본 발명의 한 바람직한 방법에 의하면 식각입자의 분사유체가 에칭액이 되고, 다른 바람직한 특징에 의하면 마스크는 이 에칭액에 대해 내식성을 가진다.According to one preferred method of the present invention, the injection fluid of the etch particles becomes an etchant, and according to another preferred feature, the mask has corrosion resistance to this etchant.
이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제4도에서, 기판(S)상에 형성된 박막(L)상에는 마스크(M)가 소정패턴으로 형성되어 있고, 그 상부로부터 세라믹볼 등의 식각입자(G)가 에칭액(Q)과 함께 분사된다. 여기서 마스크(M)는 식각입자(G)에 대한 내마모성과 함께 에칭액(Q)에 대한 내식성을 가지는 것이 바람직하다.In FIG. 4, a mask M is formed in a predetermined pattern on the thin film L formed on the substrate S, and etching particles G, such as ceramic balls, are sprayed together with the etching solution Q from above. . Here, the mask M preferably has corrosion resistance to the etching solution Q along with wear resistance to the etching particles G.
또한 식각입자(G)와 함께 분사되는 에칭액(Q)은 바람직하기로 식각입자(G)의 분사유체로 사용된다. 즉 종래의 샌드블래스팅법이 압축공기나 고압의 불활성가스 등을 분사유체로 하던 것에 비해, 에칭액(Q) 자체를 분사유체로 하는 것이다. 이러한 구성은 에칭액(Q)이 비압축성 유체이므로 별도의 고압제공수단이 없이도 플런저(plunger)펌프 등에 의해 식각입자(G)의 분사에 필요한 고압을 쉽게 달성할 수 있어 분사장치의 구성을 대폭적으로 간략화할 수 있다.In addition, the etching solution Q injected together with the etching particles G is preferably used as the injection fluid of the etching particles G. That is, the conventional sand blasting method uses the etching liquid Q itself as the injection fluid, as compared with the compressed fluid, the inert gas of high pressure, or the like as the injection fluid. Since the etching solution Q is an incompressible fluid, it is possible to easily achieve the high pressure required for the injection of the etching particles G by using a plunger pump or the like without a separate high pressure providing means, thereby greatly simplifying the configuration of the injector. Can be.
이와같은 본 발명 방법은 웨잇에칭과 드라이 에칭의 특성을 함께 가지는 식각법이라고 할 수 있는바, 그 원리를 제5도를 통해 살펴본다.Such an inventive method may be referred to as an etching method having both wet etching and dry etching characteristics, and the principle thereof will be described with reference to FIG. 5.
제5도에서, 고압으로 분사되는 식각입자(G)와 에칭액(Q)은 박막(L)표면에 충돌하여 그 운동에너지에 의해 그 표면을 타격하여 박리부(C)를 형성한다. 이때 박리부(C)는 주로 운동에너지가 큰 식각입자(G)가 형성하게 되고, 에칭액(Q)은 이 박리부(C)에 고여 이를 부식시킴으로써 식각하게 된다.In FIG. 5, the etching particles G and the etching solution Q injected at high pressure collide with the surface of the thin film L and strike the surface by the kinetic energy to form the peeling part C. At this time, the peeling part C is mainly formed of the etching particles (G) having a large kinetic energy, and the etching solution (Q) is etched by corroding it to the peeling part (C).
즉 본 발명에 의하면 식각입자(G)의 운동에너지에 의한 물리적인 이방성식각과 에칭액(Q)에 의한 화학적인 등방성식각이 동시에 이루어지게 되며, 이에 따라 종래의 샌드블래스팅법에 대해 현저히 빠른 식각속도를 달성하게 된다.That is, according to the present invention, the physical anisotropic etching by the kinetic energy of the etching particles (G) and the chemical isotropic etching by the etching solution (Q) are simultaneously performed. Accordingly, the etching speed is significantly faster than that of the conventional sand blasting method. Will be achieved.
이상과 같이 본 발명에 의하면 드라이에칭과 같은 정확한 식각을 웨잇에칭과 같이 빠른 속도로 수행할 수 있게 됨으로써, 특히 고해상도 PDP의 격벽의 형성 등에 응용되어 높은 제조효율과 수율을 달성할 수 있다.As described above, according to the present invention, since accurate etching such as dry etching can be performed at a high speed such as wet etching, it is possible to achieve high manufacturing efficiency and yield in particular, for example, to form a partition of a high resolution PDP.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950032230A KR100212722B1 (en) | 1995-09-28 | 1995-09-28 | Thin film etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950032230A KR100212722B1 (en) | 1995-09-28 | 1995-09-28 | Thin film etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970018119A KR970018119A (en) | 1997-04-30 |
| KR100212722B1 true KR100212722B1 (en) | 1999-08-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019950032230A KR100212722B1 (en) | 1995-09-28 | 1995-09-28 | Thin film etching method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100978763B1 (en) | 2001-12-21 | 2010-08-30 | 어플라이드 머티어리얼즈 인코포레이티드 | Methods of fabricating a reusable ceramic-comprising component with mechanical interlocks and an overlying sacrificial layer |
-
1995
- 1995-09-28 KR KR1019950032230A patent/KR100212722B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100978763B1 (en) | 2001-12-21 | 2010-08-30 | 어플라이드 머티어리얼즈 인코포레이티드 | Methods of fabricating a reusable ceramic-comprising component with mechanical interlocks and an overlying sacrificial layer |
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| Publication number | Publication date |
|---|---|
| KR970018119A (en) | 1997-04-30 |
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