KR100196404B1 - Ceramic composition of high deelectric constan - Google Patents
Ceramic composition of high deelectric constan Download PDFInfo
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- KR100196404B1 KR100196404B1 KR1019960039068A KR19960039068A KR100196404B1 KR 100196404 B1 KR100196404 B1 KR 100196404B1 KR 1019960039068 A KR1019960039068 A KR 1019960039068A KR 19960039068 A KR19960039068 A KR 19960039068A KR 100196404 B1 KR100196404 B1 KR 100196404B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 23
- 239000000919 ceramic Substances 0.000 title abstract description 13
- VREFGVBLTWBCJP-UHFFFAOYSA-N alprazolam Chemical compound C12=CC(Cl)=CC=C2N2C(C)=NN=C2CN=C1C1=CC=CC=C1 VREFGVBLTWBCJP-UHFFFAOYSA-N 0.000 title 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 14
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001942 caesium oxide Inorganic materials 0.000 claims abstract description 14
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000428 cobalt oxide Inorganic materials 0.000 claims abstract description 4
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims abstract description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 239000003985 ceramic capacitor Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 description 13
- 238000005245 sintering Methods 0.000 description 13
- KAGOZRSGIYZEKW-UHFFFAOYSA-N cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Co+3].[Co+3] KAGOZRSGIYZEKW-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- WEUCVIBPSSMHJG-UHFFFAOYSA-N calcium titanate Chemical compound [O-2].[O-2].[O-2].[Ca+2].[Ti+4] WEUCVIBPSSMHJG-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
본 발명은 티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 3∼9㏖%, 산화티탄(TiO2) 3∼9㏖%, 산화아연(ZnO) 0.05∼0.1㏖%, 산화코발트(Co2O3) 0.05∼0.1㏖%, 산화탄탈륨(Ta2O5) 0.05∼ 0.1㏖%로 이루어진 고유전율 유전체 자기조성물에 관한 것으로서, 상기 고유전율 유전체 자기조성물의 유전변화율이 -30∼80℃의 범위 내에서 25℃에서 유전율을 기준으로 -82% 내지 +22%를 나타내는 EIA(Electronic Industry Association) 규격의 Y5V 온도특성을 만족하고, 상온에서 안정한 온도특성을 갖으며, 각종 세라믹 콘덴서의 재료로 사용되는 고유전율 유전체 자기 조성물에 관한 것이다.100 mol% of barium titanate (BaTiO 3 ), 3-9 mol% of cesium oxide (CeO 2 ), 3-9 mol% of titanium oxide (TiO 2 ), 0.05-0.1 mol% of zinc oxide (ZnO), cobalt oxide A dielectric constant magnetic composition comprising (Co 2 O 3 ) 0.05 to 0.1 mol% and tantalum oxide (Ta 2 O 5 ) 0.05 to 0.1 mol%, wherein the dielectric change rate of the high dielectric constant dielectric magnetic composition is -30 to 80 It satisfies the Y5V temperature characteristic of the EIA (Electronic Industry Association) standard, which is -82% to + 22% based on the dielectric constant at 25 ° C within 25 ° C, and has stable temperature property at room temperature, and various ceramic capacitor materials It relates to a high-k dielectric ceramic composition used as.
Description
본 발명은 고유전율 유전체 자기조성물에 관한 것으로서, 특히 적층 세라믹 콘덴서의 재료로 사용되고 티탄산 바륨(BaTiO3)을 주성분으로 한 고유전율 유전체 자기조성물에 관한 것 이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a high-k dielectric self-composition, and more particularly, to a high-k dielectric self-assembly, which is used as a material for a multilayer ceramic capacitor and whose main component is barium titanate (BaTiO 3 ).
상기 고유전체 자기조성물이라 함은 -30∼80℃에서 25℃의 유전율을 기준으로 유전변화율 -82% 내지 +22%인 EIA(Electronic Industry Association)규격의 Y5V온도특성을 갖는 물질이다.The high dielectric self composition is a material having a Y5V temperature characteristic of the Electronic Industry Association (EIA) standard having a dielectric change rate of -82% to + 22% based on a dielectric constant of -30 to 80 ° C to 25 ° C.
종래의 고유전율 유전체 자기조성물은 티탄산 바륨(BaTiO3)을 주성분으로 하여 지르콘산 칼슘(CaZrO3), 지르콘산 바륨(BaZrO3), 티탄산 칼슘(CaTiO3), 티탄산 마그네슘(MgTiO3)등의 산화물이 첨가된 유전체가 사용되었다.A conventional high-permittivity dielectric ceramic composition zirconate calcium to as a main component barium titanate (BaTiO 3) (CaZrO 3) , zirconate, barium (BaZrO 3), calcium titanate (CaTiO 3), magnesium titanate (MgTiO 3) oxides such as This added dielectric was used.
그러나, 상기와 같이 조성된 종래의 유전체 자기 조성물들은 상온에서 높은 유전율을 갖는 반면, 절연 파괴전압이 낮고, 1,350℃ 이상의 높은 소결온도를 갖는다는 문제점이 있었다.However, the conventional dielectric ceramic compositions prepared as described above have problems of high dielectric constant at room temperature, low dielectric breakdown voltage, and high sintering temperature of 1,350 ° C or higher.
본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 안출된 것으로서, 유전율이 9,000 이상이고 절연파괴전압이 10KV/㎜ 이상이며, 1,350℃ 이하의 온도에서 소결이 가능하고 -30∼ 80℃ 까지 25℃의 유전율을 기준으로 유전변화율이 -82% 내지 +22%가 되는 Y5V 온도 특성을 갖는 고유전율 유전체 자기조성물을 제공하는 데 그 목적이 있다.The present invention has been made to solve the above problems, the dielectric constant is 9,000 or more, the dielectric breakdown voltage is 10KV / mm or more, sintering is possible at a temperature of 1,350 ℃ or less and 25 ℃ to -30 ~ 80 ℃ An object of the present invention is to provide a high-k dielectric dielectric composition having a Y5V temperature characteristic in which the dielectric change rate is -82% to + 22% based on the dielectric constant.
본 발명은 티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 3∼9㏖%, 산화티탄(TiO2) 3∼9㏖%, 산화아연(ZnO) 0.05∼0.1㏖%, 산화코발트(Co2O3) 0.05∼ 0.1㏖%, 산화탄탈륨(Ta2O5) 0.05∼0.1㏖%를 기본조성으로 하는 고유전율 유전체 자기 조성물을 특징으로 한다.100 mol% of barium titanate (BaTiO 3 ), 3-9 mol% of cesium oxide (CeO 2 ), 3-9 mol% of titanium oxide (TiO 2 ), 0.05-0.1 mol% of zinc oxide (ZnO), cobalt oxide A high-k dielectric ceramic composition comprising (Co 2 O 3 ) 0.05 to 0.1 mol% and tantalum oxide (Ta 2 O 5 ) 0.05 to 0.1 mol% as a basic composition.
상기의 구성물질 중, 산화세슘(CeO2), 산화티탄(TiO2)은 소결을 촉진하는 역할을 하는 것으로서, 상기 범위 이외에서는 Y5V 온도특성을 벗어나고 낮은 유전율을 가지며, 산화아연(ZnO)은 강도를 증진시키나 0.1㏖% 이상이면 소결성은 나빠지고, 산화코발트(Co2O3)는 0.1㏖% 이상이면 유전율이 저하되고, 산화탄탈늄(Ta2O5)은 유전율을 증가시키는 역할을 하지만 너무 과량을 첨가하면 유전손실이 증가된다.Among the above constituents, cesium oxide (CeO 2 ) and titanium oxide (TiO 2 ) serve to promote sintering, and have a low dielectric constant outside of the above Y5V temperature characteristic, and zinc oxide (ZnO) has strength. However, if the content is more than 0.1 mol%, the sinterability is poor. If the cobalt oxide (Co 2 O 3 ) is more than 0.1 mol%, the dielectric constant decreases, and tantalum oxide (Ta 2 O 5 ) plays a role of increasing the dielectric constant but is too high. Adding excess will increase dielectric loss.
표 1을 참조하여 본 발명의 실시예를 설명하면 다음과 같다. 티탄산 바륨(BaTiO3) 100 ㏖%, 산화세슘(CeO2) 3∼9㏖%, 산화티탄(TiO2) 3∼9㏖%, 산화아연(ZnO) 0.05∼0.1㏖%, 산화코발트(Co2O3) 0.05∼0.1㏖%, 산화탄탈륨(Ta2O5) 0.05∼0.1㏖%를 각각의 ㏖% 범위 내에서 적절한 양을 탈이온수와 함께 혼합한다. 이때 혼합은 볼 밀링(Ball Milling) 방법을 이용하며, 산화지르곤(ZrO2) 볼과 우레탄용기를 사용한다. 건조된 분말을 결합체와 유발로 혼합하고, 금형 유압프레스를 사용해 직경 24.5㎜, 두께 1.5㎜의 원형 시편을 제작한다. 이렇게 제작한 시편을 ZrO2세터(setter)에 놓고 공기 압의 전기로 중에서 1,250∼1,380℃의 온도로 2시간 소결한다. 소결된 시편의 양면에 은전극을 프리팅 방법으로 19.5㎜ 직경의 원형으로 도포한 다음, 열처리하여 절연파괴전압, 유전상수, 유전손실, 유전율의 온도특성(TCC)을 측정한 결과, 절연파괴전압은 12~18KV/㎜, 유전상수는 25℃에서 9,100∼ 11,000KHz, 유전손실은 1.6∼2.5%, 유전율의 온도특성(TCC)은 -30℃에서 -58∼-40%, 85℃에서 -78∼-65%인 특성을 나타냈다.Referring to Table 1, an embodiment of the present invention will be described. 100 mol% of barium titanate (BaTiO 3 ), 3-9 mol% of cesium oxide (CeO 2 ), 3-9 mol% of titanium oxide (TiO 2 ), 0.05-0.1 mol% of zinc oxide (ZnO), cobalt oxide (Co 2) O 3 ) 0.05 to 0.1 mol% and tantalum oxide (Ta 2 O 5 ) 0.05 to 0.1 mol% are mixed with deionized water in an appropriate amount within each mol% range. The blending utilizes a mill (Ball Milling) ball method, using the zirconium oxide Gon (ZrO 2) balls and the polyurethane vessel. The dried powder is mixed with the binder in a mortar, and a circular hydraulic specimen having a diameter of 24.5 mm and a thickness of 1.5 mm is prepared using a mold hydraulic press. The specimen thus prepared is placed in a ZrO 2 setter and sintered at a temperature of 1,250 to 1,380 ° C. for 2 hours in an air furnace. The silver electrode was coated on both sides of the sintered specimen in a circular shape of 19.5 mm diameter by fritting method and then heat-treated to measure the dielectric breakdown voltage, dielectric constant, dielectric loss and dielectric constant temperature characteristics (TCC). Silver is 12 ~ 18KV / mm, dielectric constant is 9,100 ~ 11,000KHz at 25 ℃, dielectric loss is 1.6 ~ 2.5%, dielectric constant temperature characteristic (TCC) is -58 ~ -40% at -30 ℃, -78 at 85 ℃ The characteristic which is -65% was shown.
[실시예 1]Example 1
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 5㏖%, 산화티탄(TiO2) 7㏖%, 산화아연(ZnO) 0.05㏖%, 산화코발트(Co2O3) 0.05㏖%, 산화탄탈륨(Ta2O5) 0.1㏖%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,310℃에서 상기의 방법으로 제조한 결과, 절연파괴전압은 18KV/㎜, 유전상수는 25℃에서 11,000KHz, 유전손실은 2.5%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각 -40%와 -72%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 5 mol% of cesium oxide (CeO 2 ), 7 mol% of titanium oxide (TiO 2 ), 0.05 mol% of zinc oxide (ZnO), 0.05 mol% of cobalt oxide (Co 2 O 3 ) , The high dielectric constant dielectric ceramic composition containing 0.1 mol% of tantalum oxide (Ta 2 O 5 ) as a component was produced by the above method at the sintering temperature of 1,310 ° C. The dielectric breakdown voltage was 18KV / mm and the dielectric constant was 25 ° C. At 11,000KHz, dielectric loss is 2.5%, dielectric constant temperature characteristic (TCC) is -40% and -72% at -30 ℃ and 85 ℃, respectively.
[실시예 2]Example 2
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 5㏖%, 산화티탄(TiO2) 7㏖%, 산화아연(ZnO) 0.05㏖%, 산화코발트(Co2O3) 0.1㏖%, 산화란다늄(La2O3) 0.05㏖%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,320℃에서 상기의 방법으로 제조한 결과, 절연파괴전압은 17KV/㎜, 유전상수는 25℃에서 10,000KHz, 유전손실은 2.1%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각 -45%와 -75%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 5 mol% of cesium oxide (CeO 2 ), 7 mol% of titanium oxide (TiO 2 ), 0.05 mol% of zinc oxide (ZnO), 0.1 mol% of cobalt oxide (Co 2 O 3 ) , The high dielectric constant dielectric ceramic composition having 0.05 mol% of lanthanum oxide (La 2 O 3 ) as a component was prepared by the above method at the sintering temperature of 1,320 ° C. The dielectric breakdown voltage was 17KV / mm, and the dielectric constant was 25 ° C. At 10,000KHz, dielectric loss was 2.1% and dielectric constant temperature characteristic (TCC) was -45% and -75% at -30 ℃ and 85 ℃, respectively.
[실시예 3]Example 3
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 5㏖%, 산화티탄(TiO2) 7㏖%, 산화아연(ZnO) 0.05㏖%, 산화코발트(Co2O3) 0.05㏖%, 산화탄탈륨(Ta2O5) 0.05㏖%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,270℃에서 상기의 방법으로 제조한 결과, 절연파괴전압은 16KV/㎜, 유전상수는 25℃에서 9,500KHz, 유전손실은 1.9%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각 -48%와 -78%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 5 mol% of cesium oxide (CeO 2 ), 7 mol% of titanium oxide (TiO 2 ), 0.05 mol% of zinc oxide (ZnO), 0.05 mol% of cobalt oxide (Co 2 O 3 ) , The high dielectric constant dielectric ceramic composition containing 0.05 mol% of tantalum oxide (Ta 2 O 5 ) as a component was produced by the above method at the sintering temperature of 1,270 ° C. The dielectric breakdown voltage was 16KV / mm and the dielectric constant was 25 ° C. At 9,500KHz, dielectric loss was 1.9%, dielectric constant temperature (TCC) was -48% and -78% at -30 ℃ and 85 ℃, respectively.
[실시예 4]Example 4
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 7㏖%, 산화티탄(TiO3) 5㏖%, 산화아연(ZnO) 0.05㏖%, 산화코발트(Co2O3) 0.05㏖%, 산화탄탈륨(Ta2O5) 0.1㏖%를 구성 성분으로 갖는 고유전율 자기조성물을 소결온도 1,300℃에서 상기의 방법으로 제조한 결과, 절연파괴전압은 17KV/㎜, 유전상수는 25℃에서 9,500KHz, 유전손실은 2.1%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각 -50% 와 -70%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 7 mol% of cesium oxide (CeO 2 ), 5 mol% of titanium oxide (TiO 3 ), 0.05 mol% of zinc oxide (ZnO), 0.05 mol% of cobalt oxide (Co 2 O 3 ) , The high dielectric constant magnetic composition containing 0.1 mol% of tantalum oxide (Ta 2 O 5 ) as a component was prepared by the above method at the sintering temperature of 1,300 ° C. The dielectric breakdown voltage was 17KV / mm, and the dielectric constant was 9,500 at 25 ° C. KHz, dielectric loss was 2.1%, and dielectric constant temperature characteristics (TCC) were -50% and -70% at -30 ℃ and 85 ℃, respectively.
[실시예 5]Example 5
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 7㏖%, 산화티탄(TiO2) 5㏖%, 산화아연(ZnO) 0.05㏖%, 산화코발트(Co2O3) 0.1㏖%, 산화탄탈륨(Ta2O5) 0.05㏖%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,295℃에서 상기의 방법으로 제조한 결과, 절연파괴전압은 15KV/㎜, 유전상수는 25℃에서 9,200KHz, 유전손실은 2%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각 -53%와 -75%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 7 mol% of cesium oxide (CeO 2 ), 5 mol% of titanium oxide (TiO 2 ), 0.05 mol% of zinc oxide (ZnO), 0.1 mol% of cobalt oxide (Co 2 O 3 ) , The high dielectric constant dielectric ceramic composition having 0.05 mol% of tantalum oxide (Ta 2 O 5 ) as a component was prepared by the above method at the sintering temperature of 1,295 ° C., and the dielectric breakdown voltage was 15 KV / mm and the dielectric constant was 25 ° C. 9200KHz, dielectric loss is 2%, dielectric constant temperature characteristic (TCC) is -53% and -75% at -30 ℃ and 85 ℃, respectively.
[실시예 6]Example 6
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 7㏖%, 산화티탄(TiO3) 5㏖%, 산화아연(ZnO) 0.1㏖%, 산화코발트(Co2O3) 0.05㏖%, 산화탄탈륨(Ta2O5) 0.05㏖%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,280℃에서 상기의 방법으로 제조한 결과, 절연파괴전압은 13KV/㎜, 유전상수는 25℃에서 9,100KHz, 유전손실은 1.9%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각 -58%와 -65%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 7 mol% of cesium oxide (CeO 2 ), 5 mol% of titanium oxide (TiO 3 ), 0.1 mol% of zinc oxide (ZnO), 0.05 mol% of cobalt oxide (Co 2 O 3 ) , The dielectric constant magnetic composition containing 0.05 mol% of tantalum oxide (Ta 2 O 5 ) as a constituent was produced by the above method at the sintering temperature of 1,280 ° C. The dielectric breakdown voltage was 13KV / mm and the dielectric constant was 25 ° C. 9,100KHz, dielectric loss was 1.9% and dielectric constant temperature characteristic (TCC) was -58% and -65% at -30 ℃ and 85 ℃, respectively.
[실시예 7]Example 7
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 9㏖%, 산화티탄(TiO2) 3㏖%, 산화아연(ZnO) 0.05㏖%, 산화코발트(Co2O3) 0.05㏖%, 산화탄탈륨(Ta2O5) 0.1㏖%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,270℃에서 상기 방법으로 제조한 결과, 절연파괴전압은 12KV/㎜, 유전상수는 25℃에서 10,500KHz, 유전손실은 2%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각 -48%와 -75%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 9 mol% of cesium oxide (CeO 2 ), 3 mol% of titanium oxide (TiO 2 ), 0.05 mol% of zinc oxide (ZnO), 0.05 mol% of cobalt oxide (Co 2 O 3 ) , The high dielectric constant dielectric ceramic composition containing 0.1 mol% of tantalum oxide (Ta 2 O 5 ) as a component was produced at the sintering temperature of 1,270 ° C. as a result.The dielectric breakdown voltage was 12KV / mm, and the dielectric constant was 10,500 at 25 ° C. KHz, dielectric loss was 2%, and dielectric constant temperature characteristic (TCC) was -48% and -75% at -30 ℃ and 85 ℃, respectively.
[실시예 8]Example 8
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 9㏖%, 산화티탄(TiO2) 3㏖%, 산화아연(ZnO) 0.05㏖%, 산화코발트(Co2O3) 0.1㏖%, 산화탄탈륨(Ta2O5) 0.05㏖%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,260℃에서 상기의 방법으로 제조한 결과, 절연파괴전압은 16KV/㎜, 유전상수는 25℃에서 9,500KHz, 유전손실은 1.8%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각-52% 와 -78%인 특성을 나타낸다.100 mol% of barium titanate (BaTiO 3 ), 9 mol% of cesium oxide (CeO 2 ), 3 mol% of titanium oxide (TiO 2 ), 0.05 mol% of zinc oxide (ZnO), 0.1 mol% of cobalt oxide (Co 2 O 3 ) , The high dielectric constant dielectric ceramic composition containing 0.05 mol% of tantalum oxide (Ta 2 O 5 ) as a component was produced by the above method at the sintering temperature of 1,260 ° C. The dielectric breakdown voltage was 16KV / mm and the dielectric constant was 25 ° C. At 9,500 KHz, dielectric loss is 1.8% and dielectric constant temperature characteristic (TCC) is -52% and -78% at -30 ℃ and 85 ℃, respectively.
[실시예 9]Example 9
티탄산 바륨(BaTiO3) 100㏖%, 산화세슘(CeO2) 9㏖%, 산화티탄(TiO2) 3㏖%, 산화아연(ZnO) 0.1㏖%, 산화코발트(Co2O3) 0.05㏖%, 산화탄탈륨(Ta2O5) 0.05㏖%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,265℃에서 상기의 방법으로 제조한 결과, 절연파괴전압은 14KV/㎜, 유전상수는 25℃에서 9,700KHz, 유손실은 1.6%, 유전율의 온도 특성(TCC)은 -30℃와 85℃에서 각각 -56%와 -78%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 9 mol% of cesium oxide (CeO 2 ), 3 mol% of titanium oxide (TiO 2 ), 0.1 mol% of zinc oxide (ZnO), 0.05 mol% of cobalt oxide (Co 2 O 3 ) , The high dielectric constant dielectric ceramic composition having 0.05 mol% of tantalum oxide (Ta 2 O 5 ) as a component was produced at the sintering temperature of 1,265 ° C by the above method. The dielectric breakdown voltage was 14KV / mm and the dielectric constant was 25 ° C. 9700 KHz, loss loss 1.6%, dielectric constant temperature characteristic (TCC) was -56% and -78% at -30 ℃ and 85 ℃, respectively.
본 발명에 의한 상기 고유전율 유전체 자기조성물은 8,000이상의 고유전율을 갖고, 10KV/㎜ 이상의 절연파괴전압과, 1,350℃ 이하의 소결온도를 갖고 있으며, 유전변화율이 -30∼80℃의 범위 내에서 25℃에서 유전율을 기준으로 -82% 내지 +22%를 나타내는 EIA(Electronic Industry Association) 규격의 Y5V 온도특성을 만족하므로 고신뢰성의 적층 세라믹 콘덴서에 이용될 수 있다.The high dielectric constant dielectric ceramic composition according to the present invention has a high dielectric constant of 8,000 or more, has an insulation breakdown voltage of 10 KV / mm or more, and a sintering temperature of 1,350 ° C. or less, and has a dielectric constant of 25 within a range of −30 to 80 ° C. Since it satisfies the Y5V temperature characteristic of the Electronic Industry Association (EIA) standard, which is -82% to + 22% based on the dielectric constant at ℃, it can be used in a highly reliable multilayer ceramic capacitor.
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