KR0174371B1 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number: KR0174371B1
Authority: KR; South Korea
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 1988-08-22

Application number

KR1019980018965A

Other languages

Korean (ko)

Inventor

Atsushi Hiraiwa

Shinichiro Kimura

Toshiyuki Mine

Takashi Kobayashi

Tokuo Kure

Shinpei Iijima

Jiro Yukami

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-08-22

Filing date

1998-05-26

Publication date

1999-10-01

1988-08-22 Priority claimed from JP63206470A external-priority patent/JP2703275B2/en

1988-09-14 Priority claimed from JP63228579A external-priority patent/JPH0278270A/en

1989-08-16 Priority claimed from KR1019890011635A external-priority patent/KR0166056B1/en

1998-05-26 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1999-10-01 Application granted granted Critical

1999-10-01 Publication of KR0174371B1 publication Critical patent/KR0174371B1/en

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)

KR1019980018965A 1988-08-22 1998-05-26 Semiconductor memory device KR0174371B1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP63206470A JP2703275B2 (en)	1988-08-22	1988-08-22	Semiconductor storage device
JP63228579A JPH0278270A (en)	1988-09-14	1988-09-14	Semiconductor memory device and manufacture thereof
KR1019890011635A KR0166056B1 (en)	1988-08-22	1989-08-16	Semiconductor device

Publications (1)

Publication Number	Publication Date
KR0174371B1 true KR0174371B1 (en)	1999-10-01

Family

ID=27328641

Family Applications (5)

Application Number	Title	Priority Date	Filing Date
KR1019980018966A KR0174370B1 (en)	1988-08-22	1998-05-26	Semiconductor memory device
KR1019980018969A KR0174367B1 (en)	1988-08-22	1998-05-26	Semiconductor memory device
KR1019980018968A KR0174368B1 (en)	1988-08-22	1998-05-26	Manufacturing method of semiconductor memory device
KR1019980018967A KR0174369B1 (en)	1988-08-22	1998-05-26	Semiconductor memory device
KR1019980018965A KR0174371B1 (en)	1988-08-22	1998-05-26	Semiconductor memory device

Family Applications Before (4)

Application Number	Title	Priority Date	Filing Date
KR1019980018966A KR0174370B1 (en)	1988-08-22	1998-05-26	Semiconductor memory device
KR1019980018969A KR0174367B1 (en)	1988-08-22	1998-05-26	Semiconductor memory device
KR1019980018968A KR0174368B1 (en)	1988-08-22	1998-05-26	Manufacturing method of semiconductor memory device
KR1019980018967A KR0174369B1 (en)	1988-08-22	1998-05-26	Semiconductor memory device

Country Status (1)

Country	Link
KR (5)	KR0174370B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR102193413B1 (en)	2020-05-08	2020-12-21	김진호	Synthetic resin panel manufacture method and box using the same

1998
- 1998-05-26 KR KR1019980018966A patent/KR0174370B1/en not_active IP Right Cessation
- 1998-05-26 KR KR1019980018969A patent/KR0174367B1/en not_active IP Right Cessation
- 1998-05-26 KR KR1019980018968A patent/KR0174368B1/en not_active IP Right Cessation
- 1998-05-26 KR KR1019980018967A patent/KR0174369B1/en not_active IP Right Cessation
- 1998-05-26 KR KR1019980018965A patent/KR0174371B1/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR0174368B1 (en)	1999-10-01
KR0174367B1 (en)	1999-10-01
KR0174370B1 (en)	1999-10-01
KR0174369B1 (en)	1999-10-01

Legal Events

Date	Code	Title	Description
1998-05-26	A107	Divisional application of patent
1998-05-26	A201	Request for examination
1998-09-25	E701	Decision to grant or registration of patent right
1998-11-04	GRNT	Written decision to grant
1999-12-01	G170	Re-publication after modification of scope of protection [patent]
2011-10-19	FPAY	Annual fee payment	Payment date: 20111019 Year of fee payment: 14
2012-11-05	LAPS	Lapse due to unpaid annual fee

Publication	Publication Date	Title
GB2215913B (en)	1991-05-15	Semiconductor memory device
GB2227109B (en)	1993-10-13	Semiconductor memory device
KR930009541B1 (en)	1993-10-06	Semiconductor memory device
GB2238637B (en)	1994-03-30	Semiconductor memory device
GB2239558B (en)	1993-08-18	Semiconductor memory device
EP0352193A3 (en)	1990-08-29	Semiconductor memory device
EP0407173A3 (en)	1992-01-08	Semiconductor memory device
KR960008449B1 (en)	1996-06-26	Semiconductor memory device
EP0430426A3 (en)	1991-06-12	Semiconductor memory device
EP0283019A3 (en)	1990-01-10	Semiconductor memory device
GB2239534B (en)	1993-12-01	Semiconductor memory device
EP0408057A3 (en)	1992-07-15	Semiconductor memory device
EP0319691A3 (en)	1990-12-27	Semiconductor memory device
EP0432509A3 (en)	1992-09-30	Semiconductor memory device
GB2239556B (en)	1993-08-25	Semiconductor memory device
EP0423825A3 (en)	1992-03-04	Semiconductor memory device
EP0294840A3 (en)	1989-11-29	Semiconductor memory device
EP0352111A3 (en)	1990-09-12	Semiconductor memory device
EP0421447A3 (en)	1992-06-17	Semiconductor memory device
EP0284985A3 (en)	1990-12-27	Semiconductor memory device
EP0405576A3 (en)	1991-11-27	Semiconductor memory device
EP0418794A3 (en)	1991-08-28	Semiconductor memory device
GB2224162B (en)	1992-07-15	Semiconductor memory device
EP0427284A3 (en)	1992-03-04	Semiconductor memory device
EP0282023A3 (en)	1989-05-17	Semiconductor memory device