KR0156106B1 - Method for pattern forming metal connection - Google Patents
Method for pattern forming metal connectionInfo
- Publication number
- KR0156106B1 KR0156106B1 KR1019900016300A KR900016300A KR0156106B1 KR 0156106 B1 KR0156106 B1 KR 0156106B1 KR 1019900016300 A KR1019900016300 A KR 1019900016300A KR 900016300 A KR900016300 A KR 900016300A KR 0156106 B1 KR0156106 B1 KR 0156106B1
- Authority
- KR
- South Korea
- Prior art keywords
- mask
- silicon oxide
- polyimide
- metal layer
- pattern
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본발명은 금속배선 공정에서의 패턴 형성방법에 관한 것으로, 단차나 요철이 심한 기판위에서의 금속패턴 형성시 마스크상의 패턴사이즈와 금속층에서의 패턴 사이즈를 일치시킬 수 있도록 한 것이다.The present invention relates to a pattern forming method in a metal wiring process, and to match the pattern size on the mask and the pattern size on the metal layer when forming a metal pattern on a substrate having a high level of step or irregularities.
본발명은 단차나 요철이 심한 기판위에 금속층을 증착하고 그위에 폴리이미드층을 두껍게 도포하는 공정과, 폴리이미드층 위에 산화실리콘, 양성 감광제를 형성하고 마스크를 사용하여 양성 감광제를 부분 감광시키는 공정과, 감광되지않은 감광제를 마스크로하여 산화실리콘을 식각하는 공정과, 산화실리콘을 마스크로하여 폴리이미드를 이방성 식각하는 공정과, 금속층을 식각하고 산화실리콘과 폴리이미드를 제거하는 공정을 차례로 실시하여서 이루어진다.The present invention comprises the steps of depositing a metal layer on a substrate having a high level of irregularities and irregularities, and thickly applying a polyimide layer thereon, forming a silicon oxide and a positive photoresist on the polyimide layer, and partially photosensitive the photoresist using a mask; And etching the silicon oxide using the unsensitized photoresist as a mask, anisotropically etching the polyimide using the silicon oxide as a mask, and etching the metal layer to remove the silicon oxide and the polyimide. .
Description
제1도는 종래의 패턴형성 공정을 나타낸 단면도.1 is a cross-sectional view showing a conventional pattern formation process.
제2도는 본발명의 패턴형성 공정을 나타낸 단면도.2 is a cross-sectional view showing a pattern forming process of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 기판 2 : 금속층1 substrate 2 metal layer
3 : 포리이미드 4 : 산화실리콘3: polyimide 4: silicon oxide
5 : 감광제 6 : 크롬면5: photosensitive agent 6: chrome surface
7 : 마스크7: mask
본발명은 게이트 및 금속배선 공정에서의 패턴형성 방법에 관한 것으로 , 특히 단차나 요철이 심한 기판위에서의 금속패턴 형성시 마스크상의 패턴사이즈와 금속층에서의 패턴 사이즈를 일치되게 형성할 수 있도록 한 것이다.The present invention relates to a pattern forming method in the gate and metal wiring process, in particular, to form the pattern size on the mask and the pattern size on the metal layer when forming the metal pattern on the substrate having a high level of irregularities or irregularities.
종래의 금속배선 공정에서의 패턴형성을 위한 포토공정은 제1도(a)에 도시된 바와같이 단차나 요철이 형성되어있는 기판(1)위에 고집적 디바이스에서 전극이나 배선등으로 사용되는 금속층(2)(혹은 폴리사이드층)을 증착하는데 기판(1)의 단차나 요철에 의해 금속층(2)또한 같은모양을 층을 형성하게 된다.The photolithography process for pattern formation in the conventional metallization process includes a metal layer used as an electrode or wiring in a highly integrated device on a substrate 1 on which a step or unevenness is formed, as shown in FIG. (Or polyside layer), the metal layer 2 also forms the same shape due to the step or irregularities of the substrate 1.
이상태에서 패턴형성을 위한 양성감광제(5)를 금속층(2)위에 도포하고 밑면에 크롬면(6)을 가진 마스크(7)을 통하여 빛을 투과시키면 크롬면(6)으로는 빛이 투과할 수 없어 크롬면(6)이 형성되지 않은 부분으로만 빛이 투과되므로 현상 후 (b)와같이 감광되지않은 양성 감광제(5a)가 남게된다.In this state, if the positive photosensitive agent (5) for pattern formation is applied on the metal layer (2) and the light is transmitted through the mask (7) having the chrome surface (6) at the bottom, the light can pass through the chrome surface (6) Since light is transmitted only to the portion where the chromium surface 6 is not formed, the positive photosensitive agent 5a, which is not photosensitive, remains after development.
이때, 금속층(2)의 경사면에 의하여 비노광된 감광제의 패턴사이즈(W2)는 최초사이즈(W1)보다 작게된다.At this time, the pattern size W 2 of the photosensitive agent unexposed by the inclined surface of the metal layer 2 is smaller than the initial size W 1 .
또한, 감광제(5a)를 마스크로하여 (c)와같이 금속층(2)을 식각하면 금속층(2)의 패턴 사이즈(W3)는 상기 패턴 사이즈(W1)(W2)와 또다르게 형성된다.Further, when the metal layer 2 is etched as shown in (c) by using the photosensitive agent 5a as a mask, the pattern size W 3 of the metal layer 2 is formed differently from the pattern size W 1 (W 2 ). .
즉, 현재 일반화되어 있는 포토공정은 단차나 요철이 심한 기판(1)위에 있는 층에서의 패턴 사이즈(W3)가 마스크상의 패턴 사이즈(W1)와 다르게 형성되는데 이는 단차나 요철에 의해 감광제(5)의 도포두께가 달라지기 때문이며 또한 노광시 빛의 강도나 노광장비의 초점심도 한게가 원인이되기도 한다.That is, the photo process is currently common is formed different from the pattern size (W 3) of the layer above the stepped or convex severe substrate (1) Pattern size (W 1) on the mask, which photosensitive material by the step or unevenness ( This is because the coating thickness of 5) is different, and it may be caused by the light intensity during exposure or the depth of focus of the exposure equipment.
최근 디바이스의 집적도가 점점 증가함에 따라 패턴 사이즈도 작아지고 있으며, 특히 미세한 패턴형성은 노광장비의 해상력 한계로 인하여 단차나 요철이 심한 층위에서의 패턴형성은 어려워 질 수 밖에 없다.As the integration of devices increases in recent years, the pattern size has become smaller, and in particular, fine pattern formation is difficult due to the limitation of the resolution of the exposure equipment, making it difficult to form the pattern on the stepped or uneven layer.
본발명은 이와같은 종래기술의 결점을 해결하기 위하여 인출한 것으로 금속층위에 두껍게 폴리이미드층을 형성하여 기판위에 요철이나 단차가 형성된 경우의 포토공정을 원활하게 실시할 수 있도록 하는데 그 목적이 있다.The present invention has been drawn in order to solve such drawbacks of the prior art, and a polyimide layer is formed on the metal layer so as to smoothly perform the photo process in the case of irregularities or steps formed on the substrate.
이와같은 목적을 달성하기위한 본발명의 일실시예를 첨부된 도면 제2도를 참고로하여 상술하면 다음과 같다.An embodiment of the present invention for achieving the above object with reference to Figure 2 of the accompanying drawings as follows.
먼저(a)와같이 단차나 요철이 심한 기판(1)위에 전극이나 금속배선으로 사용할 금속층(혹은 폴리사이드)(2)을 증착하고 그위에 폴리이미드층(3)을 두껍게 형성하면 폴리이미드층(3)표면은 평탄하게 된다.First, as shown in (a), a metal layer (or polyside) 2 to be used as an electrode or a metal wiring is deposited on a substrate 1 having a high level of irregularities or irregularities, and a polyimide layer 3 is formed thereon. 3) The surface is flat.
그리고(b)와 같이 상기 폴리이미드층(3)위에 마스크용 산화 실리콘(4)을 증착하고 그위에 양성감광제(5)를 도포한 상태에서 크롬면(6)을 가진 마스크(1)를 사용하여 노광장비에 의해 노광을 하면 노광된 빛에 의하여 양성감광제(5)가 부분 감광되며 현상용액에 현상하면 (c)와 같이 감광되지않은 감광제(5a)가 남게된다.And (b) using a mask (1) having a chrome surface (6) in the state of depositing a silicon oxide (4) for the mask on the polyimide layer (3) and applying a positive photosensitive agent (5) thereon. When the exposure is performed by the exposure equipment, the positive photosensitive agent 5 is partially exposed by the exposed light, and when developed in the developing solution, the unsensitized photosensitive agent 5a is left as shown in (c).
이때, 감광제(5) 두께의 균일성으로 인해 마스크상의 패턴사이즈(W1)와 형상후의 패턴사이즈(W2)는 어느정도 일정하게 형성된다.At this time, the pattern size W 1 on the mask and the pattern size W 2 after the shape are uniformly formed to some extent due to the uniformity of the thickness of the photosensitive agent 5.
다음에 상기 감광되지 않은 감광제(5a)를 마스크로하여(d)와 같이 산화실리콘(4)을 식각한 후 감광제(5a)를 제거한다.Next, the silicon oxide 4 is etched using the non-photosensitive photosensitive agent 5a as a mask (d), and then the photosensitive agent 5a is removed.
이어서, (e)와같이 산화실리콘(4)을 마스크로하여 포리이미드(3)을 이방성 식각하고(f)와 같이 금속층(2)을 식각한 후 산화실리콘(4)과 폴리이미드(3)를 제거하면 최초 마스크상의패턴이 형성된다.Subsequently, the polyimide (3) is anisotropically etched using the silicon oxide (4) as a mask as shown in (e), and the metal layer (2) is etched as shown in (f), and then the silicon oxide (4) and the polyimide (3) are removed. When removed, a pattern on the first mask is formed.
즉, 마스크상의 패턴사이즈(W1)와 기판(1)위에 형성되는 금속층(2)에서의 패턴사이즈(W3)가 거의 일정하게 유지된다.That is, the pattern size W 1 on the mask and the pattern size W 3 in the metal layer 2 formed on the substrate 1 are kept substantially constant.
이상에서 설명한 바와같은 본발명에 의하면 기판(1)위에 포리이미드(3)에 의해 표면 평탄화를 이룬 상태에서 감광제(5)의 도포두께를 균일하게 유지시킬 수 있어 포토공정시 정확한 패턴을 형성 할 수 있으며, 특히 미세 패턴형성시 기존 포토공정에서의 결점을 보완하여 패턴을 보다 정확한 사이즈로 형성할 수 있는 효과 가 있다.According to the present invention as described above, the coating thickness of the photosensitive agent 5 can be maintained uniformly in the state where the surface is planarized by the polyimide 3 on the substrate 1, so that an accurate pattern can be formed during the photolithography process. In particular, when the fine pattern is formed, it is possible to form a pattern with a more accurate size by compensating for defects in the existing photo process.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900016300A KR0156106B1 (en) | 1990-10-15 | 1990-10-15 | Method for pattern forming metal connection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900016300A KR0156106B1 (en) | 1990-10-15 | 1990-10-15 | Method for pattern forming metal connection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920008913A KR920008913A (en) | 1992-05-28 |
| KR0156106B1 true KR0156106B1 (en) | 1998-10-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900016300A KR0156106B1 (en) | 1990-10-15 | 1990-10-15 | Method for pattern forming metal connection |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0156106B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101033174B1 (en) * | 2005-12-30 | 2011-05-11 | 아주대학교산학협력단 | Glass micromachining using multi-step wet etching process |
-
1990
- 1990-10-15 KR KR1019900016300A patent/KR0156106B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101033174B1 (en) * | 2005-12-30 | 2011-05-11 | 아주대학교산학협력단 | Glass micromachining using multi-step wet etching process |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920008913A (en) | 1992-05-28 |
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