KR0138126B1 - Developing method of photoresist film - Google Patents
Developing method of photoresist filmInfo
- Publication number
- KR0138126B1 KR0138126B1 KR1019940013032A KR19940013032A KR0138126B1 KR 0138126 B1 KR0138126 B1 KR 0138126B1 KR 1019940013032 A KR1019940013032 A KR 1019940013032A KR 19940013032 A KR19940013032 A KR 19940013032A KR 0138126 B1 KR0138126 B1 KR 0138126B1
- Authority
- KR
- South Korea
- Prior art keywords
- developer
- photoresist
- organic solvent
- developing method
- reduced
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Abstract
본 발명은 현상액에 기화가 되기 쉽고 웨이퍼상의 증착막에는 화학적 영향을 주지 않는 소정의 유기용제를 첨부하여 현상 공정을 수행하는 것을 특징으로 하는 감광막 현상 방법에 관한 것으로, 현상 용액에 유기 용제를 첨가함으로써 현상액 기포를 제거하여 감광막 패턴의 선폭 균일성을 향상시키고, 현상액의 사용감소로 생산비를 절감하며 현상시간 감소로 생산성을 향상시키는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensitive film developing method characterized by attaching a predetermined organic solvent which is easily evaporated to a developer and does not have a chemical effect on a deposited film on a wafer. By removing bubbles, the line width uniformity of the photoresist layer pattern is improved, production costs are reduced due to the reduced use of the developer, and development time is reduced, thereby improving productivity.
Description
제1도는 유기용제가 현상액 내부에서 하는 역할을 가시적으로 설명하기 위한 개념도.1 is a conceptual diagram for visually explaining the role of the organic solvent in the developer.
*도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1:포토레지스트2:현상액1: photoresist 2: developer
3:유기용제4:기포3: Organic solvent 4: Bubble
본 발명은 반도체 제조공정중 사진식각공정시 마스크 물질인 포토레지스트 패턴을 형성하는 공정에 관한 것으로, 특히 포토레지스트 현상(develope)방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process of forming a photoresist pattern which is a mask material during a photolithography process in a semiconductor manufacturing process, and more particularly, to a photoresist development method.
포토레지스트(photoresist)는 빛이 투과되면 그 분자 구조가 변하는 유기 화합물로서, 웨이퍼 상에 증착된 포토레지스트에 레티클(reticle)을 사용한 노광(exposure)공정을 실시하면 전체 영역중 소정영역은 빛에 반응 하게되고, 이후에 현상액을 사용하여 현상하면 양성포토레지스트일 경우는 빛에 반응된 부위가, 음성 포토레지스트일 경우는 빛에 반응된 부위가, 음성 포토레지스트일 경우는 빛에 반응하지 않은 부위가 용해되어 제거되므로써 패턴을 완성하게 된다.A photoresist is an organic compound whose molecular structure changes when light is transmitted. When a photoresist deposited on a wafer is subjected to an exposure process using a reticle, a predetermined area of the entire area reacts to light. After developing using a developer, the positive photoresist part is the light-reactive part, and the negative photoresist part is the light-reactive part, and the negative photoresist part is not the light part. It is dissolved and removed to complete the pattern.
그러나, 통상적으로 현상 공정은 포토레지스트가 형성된 웨이퍼에 현상액을 분사하면서 실시하고 있으나, 현상액 분사시 수많은 기포(bubble)가 발생하여 포토레지스트 패턴의 선폭 균일성이 떨어지고 또한 현상되지 않는 곳이 발생하는 문제점이 발생한다.However, the development process is generally performed while injecting the developer onto the wafer on which the photoresist is formed. However, a large number of bubbles are generated during the injection of the developer, resulting in poor line width uniformity of the photoresist pattern and development of a place where it is not developed. This happens.
때문에, 이러한 미 현상부위에 다시 현상액을 분사하여야 하므로 현상액의 낭비는 물론, 공정시간의 증가로 소자의 생산성 또한 떨어지게 된다.Therefore, the developer must be sprayed again on the undeveloped portion, and the productivity of the device is also reduced due to the increase of process time as well as waste of the developer.
상기 제반 문제점을 해결하기 위하여 안출된 본 발명은, 현상액 분사시 발생되는 기포를 제거하여 예정된 부위의 포토레지스트 현상 효과를 증대시키는 포토레지스트 현상 방법에 관한 것이다.The present invention devised to solve the above-mentioned problems, the present invention relates to a photoresist developing method for removing the bubbles generated during the spraying of the developer to increase the photoresist developing effect of the predetermined site.
상기 목적을 달성하기 위한 본 발명의 포토레지스트 현상 방법은, 기화되기 쉽고 웨이퍼상의 포토레지스트에는 화학적 영향을 주지 않는 부틸 아세테이트(butyl acetate)를 포토레지스트 현상액에 첨부하여 현상 공정을 수행하는 것을 특징으로 한다.The photoresist development method of the present invention for achieving the above object is characterized in that the development process is carried out by attaching butyl acetate to the photoresist developer, which is easily vaporized and does not chemically affect the photoresist on the wafer. .
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
본 발명은 현상액의 기포를 제거하기 위해 현상액 분사시 기화가 되기 쉽고 포토레지스트에는 영향을 주지 않는 부틸 아세테이트(butyl acetate)과 같은 유기용제를 소량 첨가하는 것으로, 현상액 분사 후 별도의 노즐을 통해 유지용제를 5cc 정도 분사하면, 이 유기용제는 기화되면서 현상액 내부기포를 터뜨리거나 현상액 표면으로 기포를 이동시키며, 용제가 기화되면서 현상액을 순환시켜줌으로 반응온도를 수준으로 유지시켜 준다.The present invention is to add a small amount of an organic solvent, such as butyl acetate that is easy to evaporate during developer spraying and does not affect the photoresist in order to remove the bubbles of the developer, the maintenance solvent through a separate nozzle after the developer spraying When spraying about 5cc, the organic solvent is evaporated to burst the internal bubbles of the developer or to move the bubbles to the surface of the developer, while circulating the developer as the solvent is vaporized to maintain the reaction temperature at the level.
제1도는 유기용제가 현상액 내부에서 하는 역할을 가시적으로 설명하기 위한 개념도로서, 도면에서 1은 포토레지스트, 2는 현상액, 3은 유기용제, 4는 현상액 기포를 각각 나타내는데, 도면에 도시된 바와 같이 유기용제(3)는 기포(4)를 현상액 표면으로 이동시키며(도면의 4a), 기화되는 힘에 의해서 기포(4)를 터뜨린다(도면의 4b).FIG. 1 is a conceptual diagram for visually explaining the role of the organic solvent in the developer. In the drawing, 1 represents a photoresist, 2 represents a developer, 3 represents an organic solvent, and 4 represents a developer bubble. The organic solvent 3 moves the bubble 4 to the surface of the developing solution (4a in the drawing), and bursts the bubble 4 by the vaporizing force (4b in the drawing).
또한, 유기용제(3)의 기화되는 힘에 의해서 현상액을 순환시킨다(도면의 C).In addition, the developer is circulated by the evaporated force of the organic solvent (3).
이상, 상기 설명과 같이 이루어지는 본 발명은 현상 용액에 유기용제를 첨가함으로써 현상액 기포를 제거하여 포토레지스트 패턴의 선폭 균일성을 향상시키고, 현상액의 사용감소로 생산비를 절감하여 현상시간 감소로 생산성을 향상시키는 효과가 있다.As described above, the present invention as described above improves the line width uniformity of the photoresist pattern by removing the developer bubbles by adding an organic solvent to the developing solution, and reduces the production cost by reducing the use of the developer, thereby improving productivity by reducing the development time. It is effective to let.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940013032A KR0138126B1 (en) | 1994-06-09 | 1994-06-09 | Developing method of photoresist film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940013032A KR0138126B1 (en) | 1994-06-09 | 1994-06-09 | Developing method of photoresist film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960002656A KR960002656A (en) | 1996-01-26 |
| KR0138126B1 true KR0138126B1 (en) | 1998-06-15 |
Family
ID=19385038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940013032A KR0138126B1 (en) | 1994-06-09 | 1994-06-09 | Developing method of photoresist film |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0138126B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101523539B1 (en) * | 2006-12-25 | 2015-05-28 | 후지필름 가부시키가이샤 | Pattern forming method using resist composition for multiple development |
-
1994
- 1994-06-09 KR KR1019940013032A patent/KR0138126B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101523539B1 (en) * | 2006-12-25 | 2015-05-28 | 후지필름 가부시키가이샤 | Pattern forming method using resist composition for multiple development |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960002656A (en) | 1996-01-26 |
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