KR0137925Y1 - Apparatus for fabricating a semiconductor device - Google Patents
Apparatus for fabricating a semiconductor device Download PDFInfo
- Publication number
- KR0137925Y1 KR0137925Y1 KR2019940031624U KR19940031624U KR0137925Y1 KR 0137925 Y1 KR0137925 Y1 KR 0137925Y1 KR 2019940031624 U KR2019940031624 U KR 2019940031624U KR 19940031624 U KR19940031624 U KR 19940031624U KR 0137925 Y1 KR0137925 Y1 KR 0137925Y1
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- wafer
- etching
- unit
- photosensitive agent
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 56
- 238000005530 etching Methods 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 8
- 239000012498 ultrapure water Substances 0.000 claims abstract description 8
- 238000003860 storage Methods 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 3
- 230000001681 protective effect Effects 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 19
- 238000004904 shortening Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004148 unit process Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 고안은 반도체장치에 관한 것으로, 웨이퍼를 저장 하고 외부로 꺼내거나 외부로부터 넣을 수 있도록 하기 위한 웨이퍼 출입저장부와, 기판상에 형성된 금속층을 감광제를 사용하여 소정형태로 사진식각하기 위한 금속 식각부와, 상기 금속식각부로부터 식각된 금속 및 기판을 초순수로 세정하기 위한 세정부와, 상기 감광제를 제거하기 위한 감광제 제거부와, 상기 식각된 금속 외의 물질을 제거하기 위한 현상 처리부와, 상기 식각된 금속 위에 산화막을 형성하여 부식을 방지하기 위한 표면산화부와, 대기에 노출없이 상기 모든 구성부와의 웨이퍼 이동이 가능한 웨이퍼 전송부를 포함하여 구성되며, 금속막 식각으로부터 금속막 부식방지를 위한 표면산화막 공정을 웨이퍼의 이동이 상기 웨이퍼 전송장치를 통해 이루어지는 단일 장치 내에서 처리함으로써 지연시간 및 대기노출 시간이 없으며, 이에따라 금속막의 부식방지 및 제품에 대한 신뢰성을 향상시키고 생산시간을 단축시킬 수 있는 효과가 있다.The present invention relates to a semiconductor device, and a wafer access storage for storing the wafer and to be taken out or put out from the outside, and a metal etching portion for photo-etching the metal layer formed on the substrate in a predetermined form using a photosensitive agent. And a cleaning unit for cleaning the metal and the substrate etched from the metal etching unit with ultrapure water, a photosensitive agent removing unit for removing the photosensitive agent, a developing unit for removing substances other than the etched metal, and the etched portion A surface oxide film is formed to prevent corrosion by forming an oxide film on the metal, and a wafer transfer part capable of moving the wafer to all the components without exposure to the atmosphere, and the surface oxide film to prevent corrosion of the metal film from metal film etching. Process is processed in a single device where wafer movement is via the wafer transfer device As a result, there is no delay time and no atmospheric exposure time, thereby preventing corrosion of the metal film and improving the reliability of the product and shortening the production time.
Description
제1도는 통상의 반도체소자의 제조방법을 도시한 단면도.1 is a cross-sectional view showing a conventional method for manufacturing a semiconductor device.
제2도는 종래의 기술에 의한 반도체소자의 제조 흐름도.2 is a flowchart of manufacturing a semiconductor device according to the prior art.
제3도는 본 고안에 의한 반도체소자 제조장치의 구성도.3 is a block diagram of a semiconductor device manufacturing apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
51 : 금속 식각부 53 : 세정부51 metal etching part 53 cleaning part
55 : 감광제 제거부 57 : 현상 처리부55: photosensitive agent removing unit 57: developing treatment unit
59 : 표면산화부 61 : 웨이퍼 전송부59: surface oxidation unit 61: wafer transfer unit
63 : 웨이퍼 출입 저장부63: wafer access storage unit
본 고안은 반도체소자 제조장치에 관한 것으로, 특히 연속적으로 금속막 식각 공정에서 표면금속산화막 공정까지를 수행하기 위한 반도체 소자 제조장치에 관한 것이다.The present invention relates to a semiconductor device manufacturing apparatus, and more particularly, to a semiconductor device manufacturing apparatus for performing continuously from the metal film etching process to the surface metal oxide film process.
반도체 소자를 제조하기 위한 공정중, 금속막의 부식을 방지하기 위한 표면산화막을 형성하는 통상의 공정은, 일반적으로 제1도에 도시한 바와 같이 (a)도에서 BPSG (Boro-Phospho Solocate Glass)와 같은 절연막(1) 위에 금속물질을 증착시켜 금속막(3)을 형성한 후 상기 금속막(3) 위에 포토레지스트(5)를 도포하고, 노광 및 현상하여 원하는 사진식각패턴을 형성하며, 이어서 (b)도에서 상기 사진식각패턴을 마스크로 하여 상기 금속막(3) 및 기판(1)의 일부를 과도식각한 후 식각된 금속막(3)과 기판(1) 측면에 상기 금속막을 보호하기 위한 보호막(7)을 형성하며, 이후 (c)도 및 (d)도에서 상기 사진식각패턴을 식각에천트로 제거한 후 초순수로 그 결과물을 세척하고 다시 상기 보호막을 제거하고, (e)도에서 순수한 상기 금속막(3) 표면을 산화시켜 표면금속산화막(9)을 형성하는 순서로 진행된다.In the process for manufacturing a semiconductor device, a conventional process of forming a surface oxide film for preventing corrosion of a metal film is generally carried out with BPSG (Boro-Phospho Solocate Glass) in (a) as shown in FIG. After depositing a metal material on the same insulating film 1 to form a metal film 3, the photoresist 5 is applied on the metal film 3, exposed and developed to form a desired photolithography pattern, and then ( b) over-etching a part of the metal film 3 and the substrate 1 using the photolithography pattern as a mask, and then protecting the metal film on the side of the etched metal film 3 and the substrate 1. A protective film 7 is formed, and then the photolithography pattern is removed with an etching etchant in (c) and (d), and the resultant is washed with ultrapure water and the protective film is removed again, and in (e) is pure. The surface of the metal film 3 is oxidized to form a surface metal oxide film 9. The proclamation is in order.
그리고 상기와 같은 공정들은, 실제 제2도에 도시한 바와 같이 금속막식각장치(10)와, 초순수 세정장치(20), 감광제 제거장치(30) 및 보호막을 제거하기 위한 현상처리장치(40)의 순서로 웨이퍼로 이동시켜 각 공정을 실시하는데, 초기에는 상기 금속막식각 공정과 이후의 후처리 공정이 별개의 시스템에서 따로 실시되었으며, 최근에는 상기 금속막식각공정으로부터 사진식각패턴의 제거공정까지 동일시스템 내에서 실시하고 상기 보호막 제거 및 표면산화막처리 공정은 별개의 시스템에서 실시하도록 되어 있었다.And the processes as described above, as shown in FIG. 2, the metal film etching apparatus 10, the ultrapure water cleaning apparatus 20, the photoresist removing apparatus 30, and the developing treatment apparatus 40 for removing the protective film. Each process is carried out by moving to a wafer in the order of. In the beginning, the metal film etching process and the post-treatment process are performed separately in separate systems, and recently, from the metal film etching process to the removal process of the photolithography pattern. The protective film removal and surface oxide film treatment processes were carried out in a separate system.
즉, 종래의 반도체소자 제조장치 상에서는 금속막의 부식을 방지하기 위한 공정이 하나의 단일 시스템 상에서 처리되지 못함으로써 웨이퍼의 시스템간 이동에 의한 대기 노출로 금속막이 부식되며, 단위공정간 지연시간관리가 이루어지지 않으므로 불량발생률이 증가하며, 단위공정 시스템 이상에서는 이전공정을 중단해야 하므로 관리가 어려운 문제점이 있었다.That is, in the conventional semiconductor device manufacturing apparatus, the process for preventing the corrosion of the metal film is not processed on one single system, so that the metal film is corroded due to atmospheric exposure due to the movement of the wafer between systems, and the delay time management between the unit processes Since it does not support, the failure rate increases, and since the previous process must be stopped at the unit process system, it was difficult to manage.
따라서 본 고안의 목적은 상기와 같은 종래의 문제점을 해결하기 위하여, 금속막의 형성 및 부식을 방지하기 위한 후처리공정을 단일장치내에서 처리함으로써 관리가 용이하며, 불량발생을 감소시켜 부식방지 및 제품에 대한 신뢰성을 향상시킬 수 있으며, 생산시간을 단축시킬 수 있는 반도체소자 제조장치를 제공하는 것이다.Therefore, the object of the present invention is to manage the post-treatment process to prevent the formation and corrosion of the metal film in a single device in order to solve the conventional problems as described above, easy management, reducing the occurrence of defects to prevent corrosion and products It is possible to improve the reliability and to provide a semiconductor device manufacturing apparatus that can reduce the production time.
상기 목적을 달성하기 위한 본 고안의 반도체소자 제조장치는, 웨이퍼를 저장하고 외부로 꺼내거나 외부로부터 넣을 수 있도록 하기 위한 웨이퍼 출입 저장부와, 기판상에 형성된 금속층을 감광제를 사용하여 소정형태로 사진식각하고 보호막을 형성하는 금속 식각부와, 상기 금속식각부로부터 식각된 금속 및 기판을 초순수로 세정하기 위한 세정부와, 상기 감광제를 제거하기 위한 감광제 제거부와, 상기 식각된 금속 외의 보호막 등의 물질을 제거하기 위한 현상 처리부와, 상기 식각된 금속 위에 산화막을 형성하여 부식을 방지하기 위한 표면산화부와, 대기에 노출없이 상기 금속식각부, 세정부, 감광제 제거부, 현상처리부 및 표면산화부의 각부 사이에서 서로 격리되면서 웨이퍼 이동이 가능한 웨이퍼 전송부를 포함하여 구성된 것을 특징으로 한다.The semiconductor device manufacturing apparatus of the present invention for achieving the above object is a wafer access storage for storing the wafer and to be taken out or put out from the outside, and the metal layer formed on the substrate using a photosensitive agent in a predetermined form A metal etching portion for etching and forming a protective film, a cleaning portion for cleaning the metal and the substrate etched from the metal etching portion with ultrapure water, a photoresist removing portion for removing the photosensitive agent, a protective film other than the etched metal, and the like. A developing part for removing a substance, a surface oxidation part for forming an oxide film on the etched metal to prevent corrosion, the metal etching part, a cleaning part, a photoresist removing part, a developing part and a surface oxidation part without being exposed to the atmosphere. It characterized in that it comprises a wafer transfer unit capable of moving the wafer while being isolated from each other between each part .
이하 첨부도면을 참조하여 본 고안을 좀 더 상세하게 설명하고자 한다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
본 고안의 반도체소자 제조장치는 제3도에 도시한 바와 같이 Cl2와 BCl3와 같은 식각가스를 사용하고 상기 식각가스량을 조절하기 위한 펌프 및 전원등을 갖춘 챔버로 구성되며, 기판상에 형성된 금속층을 감광제를 사용하여 소정형태로 사진식각하고 보호막을 형성하는 금속식각부(51)와, 초순수와 질소(N2) 가스를 사용하고 상기 금속식각부(51)로부터 식각된 금속 및 기판을 초순수로 세정하기 위한 세정부(53)와, O2가스를 사용하고 펌프 및 전원등을 갖춘 챔버로 구성되며, 상기 감광제를 제거하기 위한 감광제 제거부(55)와, 현상용액 및 질소가스등을 사용하며 상기 식각된 금속 외의 보호막 등의 물질을 제거하기 위한 현상 처리부(57)와 O2가스 또는 O3가스를 사용하고 전원을 갖춘 챔버로 구성되며 상기 식각된 금속 위에 산화막을 형성하여 부식을 방지하기 위한 표면산화부(59)와, 웨이퍼를 대기에 노출시키지 않고 상기 금속식각부(51), 세정부(53), 감광막 제거부(55), 현상처리부(57) 및 표면산화부(59)의 각부 사이에서 서로 격리하면서 웨이퍼의 이동이 자유로운 웨이퍼 전송부(61)와, 웨이퍼를 저장 하고 외부로 꺼내거나 외부로부터 넣을 수 있도록 하기 위한 웨이퍼 출입 저장부(63)로 이루어지며, 이를 이용한 금속막 식각으로부터 금속표면산화막 제조까지의 공정은 다음과 같다.The semiconductor device manufacturing apparatus of the present invention uses an etching gas such as Cl 2 and BCl 3 as shown in FIG. 3 and comprises a chamber having a pump and a power supply for controlling the etching gas amount. Photoetching the metal layer in a predetermined form using a photoresist and forming a protective film, and ultrapure water using ultrapure water and nitrogen (N 2 ) gas and etching the metal and substrate etched from the metal etching part 51. It consists of a cleaning section 53 for cleaning the furnace, a chamber using O 2 gas, a pump and a power supply, a photosensitive agent removal unit 55 for removing the photosensitive agent, a developing solution and nitrogen gas, etc. It is composed of a developing unit 57 for removing a material such as a protective film other than the etched metal and a chamber using an O 2 gas or an O 3 gas and having a power source. Surface oxidizing portion 59 to prevent the metal, and the metal etching portion 51, the cleaning portion 53, the photoresist removing portion 55, the developing portion 57 and the surface oxidation portion without exposing the wafer to the atmosphere. 59 is a wafer transfer unit 61 is free from the movement of the wafer while separating each other between each portion of the portion 59, and the wafer access storage unit 63 for storing the wafer to be taken out or put out from the outside, The process from metal film etching to metal surface oxide film production is as follows.
먼저, 웨이퍼에 금속물질로서 예를들면 Al을 스퍼터링하여 금속막을 형성한 후상기 금속막을 금속식각부(51)에서 Cl2가스와 BCl3가스를 사용하여 아래의 반응식(1)에 따라 반응시켜 금속막을 식각한다.First, as a metal material on a wafer, for example, Al is sputtered to form a metal film, and then the metal film is reacted according to the following Equation (1) using Cl 2 gas and BCl 3 gas in the metal etching unit 51. Etch the membrane.
이어서, 상기 금속막이 식각된 웨이퍼를 상기 웨이퍼 전송부(61)를 통해 세정부(53)로 전송하여 초순수로 세정하여 웨이퍼 표면에 묻어있는 잔류가스를 제거하고, 다시 상기 세정된 웨이퍼를 상기 웨이퍼 전송부(61)를 통해 감광제 제거부(55)로 이동시키고 산소플라즈마(O2)를 사용하여 아래의 반응식(2)에 따라 반응시켜 금속막 식각시 사용한 감광제를 제거한다.Subsequently, the metal film-etched wafer is transferred to the cleaning unit 53 through the wafer transfer unit 61 and cleaned with ultrapure water to remove residual gas on the surface of the wafer, and then transfer the cleaned wafer to the wafer. It moves to the photosensitive agent removing unit 55 through the unit 61 and reacts according to the following reaction formula (2) using oxygen plasma (O 2 ) to remove the photosensitive agent used in etching the metal film.
그리고 상기 감광제가 제거된 웨이퍼를 상기 웨이퍼 전송부(61)를 통해 상기 현상 처리부(57)로 이동시켜 현상용액을 이용하여 금속막 식각 중 형성한 보호막을 제거한 후, 다시 상기 웨이퍼 전송부(61)를 통해 웨이퍼를 표면산화부(59)로 이동시켜 산소플라즈마(O2), 또는 오존(O3)과 자외선 램프를 사용하여 아래의 반응식(3)에 따라 반응시켜 금속막 표면에 금속막의 부식을 방지하기 위한 표면산화막을 형성한다.The wafer having the photosensitive agent removed is moved to the developing processor 57 through the wafer transfer part 61 to remove the protective film formed during etching of the metal film using a developing solution, and then the wafer transfer part 61 is removed. The wafer is moved to the surface oxidation unit 59 through and reacted with oxygen plasma (O 2 ) or ozone (O 3 ) using an ultraviolet lamp according to the following equation (3) to prevent corrosion of the metal film on the metal film surface. A surface oxide film is formed to prevent it.
또한 상기 감광막의 제거와 표면산화막의 형성은 필요에 따라 한챔버 내에서 할 수 있도록 하며, 중간공정상에서 문제가 발생되면 사전공정이 자동적으로 중단되도록 한다.In addition, the removal of the photosensitive film and the formation of the surface oxide film can be performed in one chamber as necessary, and if a problem occurs in the intermediate process, the pre-process is automatically stopped.
이상에서와 같이 본 고안에 의하면, 금속막 식각으로부터 금속막 부식방지를 위한 표면산화막 공정까지 웨이퍼의 이동이 상기 웨이퍼 전송장치를 통해 이루어지는 단일 장치 내에서 처리함으로써 지연시간 및 대기노출시간이 없으며, 이에따라 금속막의 부식방지 및 제품에 대한 신뢰성을 향상시키고 생산시간을 단축시킬 수 있는 효과가 있다.As described above, according to the present invention, there is no delay time and atmospheric exposure time by processing the wafer from a metal film etching to a surface oxide film process for preventing metal film corrosion in a single device through the wafer transfer device. It is effective in preventing corrosion of metal film, improving reliability of products and shortening production time.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940031624U KR0137925Y1 (en) | 1994-11-28 | 1994-11-28 | Apparatus for fabricating a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940031624U KR0137925Y1 (en) | 1994-11-28 | 1994-11-28 | Apparatus for fabricating a semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960019074U KR960019074U (en) | 1996-06-19 |
| KR0137925Y1 true KR0137925Y1 (en) | 1999-03-20 |
Family
ID=19399367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940031624U KR0137925Y1 (en) | 1994-11-28 | 1994-11-28 | Apparatus for fabricating a semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0137925Y1 (en) |
-
1994
- 1994-11-28 KR KR2019940031624U patent/KR0137925Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960019074U (en) | 1996-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6926014B2 (en) | Method for cleaning a plasma chamber | |
| KR19980070591A (en) | Heat cleaning method using nitrogen trifluoride-oxygen | |
| US5863834A (en) | Semiconductor device and method of manufacturing the same | |
| US6566269B1 (en) | Removal of post etch residuals on wafer surface | |
| KR0137925Y1 (en) | Apparatus for fabricating a semiconductor device | |
| US5496438A (en) | Method of removing photo resist | |
| US6506684B1 (en) | Anti-corrosion system | |
| KR100262506B1 (en) | Manufacturing method for semiconductor device | |
| EP0058214B1 (en) | Method for increasing the resistance of a solid material surface against etching | |
| US5840203A (en) | In-situ bake step in plasma ash process to prevent corrosion | |
| JP3194245B2 (en) | Processing method for substrate on which amorphous silicon layer is formed | |
| JP2008103431A (en) | Method and device for manufacturing semiconductor device | |
| JPH08306668A (en) | Ashing | |
| JP3348804B2 (en) | Post-etch treatment method | |
| JPH03241829A (en) | Manufacture of semiconductor device | |
| JPH09298188A (en) | Manufacture of semiconductor device | |
| JPH0637050A (en) | Dry-etching device for semiconductor wafer | |
| JP2821613B2 (en) | Method for manufacturing semiconductor device | |
| EP0256298B1 (en) | Process for preparing a vertically differentiated transistor device | |
| KR0151176B1 (en) | Dry removing method of photoresist | |
| JPS5830134A (en) | Dry etching method | |
| KR100203751B1 (en) | Semiconductor fabricating method | |
| JPH02262335A (en) | Eliminating method of organic compound film | |
| JPH05217961A (en) | Precision processing method for silicon | |
| KR0156148B1 (en) | Fabrication method of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| J201 | Request for trial against refusal decision |
Free format text: TRIAL AGAINST DECISION OF REJECTION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL |
|
| B701 | Decision to grant | ||
| REGI | Registration of establishment | ||
| FPAY | Annual fee payment |
Payment date: 20081027 Year of fee payment: 11 |
|
| EXPY | Expiration of term |