KR0126784B1 - Cleaning method of semiconductor substrate and cleaning material therefor - Google Patents
Cleaning method of semiconductor substrate and cleaning material thereforInfo
- Publication number
- KR0126784B1 KR0126784B1 KR94016452A KR19940016452A KR0126784B1 KR 0126784 B1 KR0126784 B1 KR 0126784B1 KR 94016452 A KR94016452 A KR 94016452A KR 19940016452 A KR19940016452 A KR 19940016452A KR 0126784 B1 KR0126784 B1 KR 0126784B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor substrate
- cleaning
- metal
- layer
- polysilicon
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 5
- 238000004140 cleaning Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000011538 cleaning material Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 6
- 239000007788 liquid Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 abstract 2
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Emergency Medicine (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
A method for cleaning a semiconductor substrate and a cleaning liquid used therein is disclosed. A semiconductor substrate, particularly the semiconductor substrate where a polycide structure is formed, is cleaned by the cleaning liquid of TC-1. The TC-1 is the liquid which is obtained by mixing aqueous solutions of tetra Methyl Ammonium Hydroxide(NR4OH) and H2O2 and delonized water. A word line layer is formed on the semiconductor substrate, it is one selected from the group consisting of a metal layer, a metal nitride layer, metal silicide layer, layers of polysilicon and metal, layers of polysilicon and metal silicide, and layers of polysilicon and metal nitride. Thereby, it is possible to remove particle, polymer and metallic impurities without the damage of a word line structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR94016452A KR0126784B1 (en) | 1994-07-08 | 1994-07-08 | Cleaning method of semiconductor substrate and cleaning material therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR94016452A KR0126784B1 (en) | 1994-07-08 | 1994-07-08 | Cleaning method of semiconductor substrate and cleaning material therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960005819A KR960005819A (en) | 1996-02-23 |
| KR0126784B1 true KR0126784B1 (en) | 1998-04-02 |
Family
ID=19387591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR94016452A KR0126784B1 (en) | 1994-07-08 | 1994-07-08 | Cleaning method of semiconductor substrate and cleaning material therefor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0126784B1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990075991A (en) * | 1996-06-27 | 1999-10-15 | 김영환 | Metal wiring formation method of semiconductor device |
| KR100499628B1 (en) * | 2002-06-29 | 2005-07-05 | 주식회사 하이닉스반도체 | Cleaning Method of Semiconductor Device |
| KR100709564B1 (en) * | 2004-10-27 | 2007-04-20 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
| US7476622B2 (en) | 2002-11-22 | 2009-01-13 | Samsung Electronics Co., Ltd. | Method of forming a contact in a semiconductor device |
-
1994
- 1994-07-08 KR KR94016452A patent/KR0126784B1/en not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990075991A (en) * | 1996-06-27 | 1999-10-15 | 김영환 | Metal wiring formation method of semiconductor device |
| KR100499628B1 (en) * | 2002-06-29 | 2005-07-05 | 주식회사 하이닉스반도체 | Cleaning Method of Semiconductor Device |
| US7476622B2 (en) | 2002-11-22 | 2009-01-13 | Samsung Electronics Co., Ltd. | Method of forming a contact in a semiconductor device |
| KR100709564B1 (en) * | 2004-10-27 | 2007-04-20 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960005819A (en) | 1996-02-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050909 Year of fee payment: 9 |
|
| LAPS | Lapse due to unpaid annual fee |