KR0124489B1 - Forming method of titanium nitride film for semiconductor device - Google Patents
Forming method of titanium nitride film for semiconductor deviceInfo
- Publication number
- KR0124489B1 KR0124489B1 KR1019930024969A KR930024969A KR0124489B1 KR 0124489 B1 KR0124489 B1 KR 0124489B1 KR 1019930024969 A KR1019930024969 A KR 1019930024969A KR 930024969 A KR930024969 A KR 930024969A KR 0124489 B1 KR0124489 B1 KR 0124489B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- titanium
- forming
- titanium nitride
- semiconductor device
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims description 23
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010936 titanium Substances 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims abstract description 7
- 239000011229 interlayer Substances 0.000 claims abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 3
- 238000001039 wet etching Methods 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 3
- 238000000137 annealing Methods 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
제1a도 내지 제1d도는 본 발명에 의한 반도체 소자의 확산방지용 티타늄 나이트라이드 박막을 형성하는 단계를 설명하기 위해 도시한 단면도.1A to 1D are cross-sectional views for explaining a step of forming a titanium nitride thin film for preventing diffusion of a semiconductor device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 실리콘 기판 2 : 층간 절연막1 silicon substrate 2 interlayer insulating film
3 : 티타늄 4 : 티타늄 실리사이드3: titanium 4: titanium silicide
5 : 티타늄 나이트라이드 6 : 접촉홈5: titanium nitride 6: contact groove
본 발명은 반도체 소자의 확산방지용 티타늄 나이트라이드(TiN) 박막을 형성하는 방법에 관한 것이다.The present invention relates to a method of forming a titanium nitride (TiN) thin film for preventing diffusion of a semiconductor device.
일반적으로, 반도체 소자의 제조공정 중에서 티타늄 나이트라이드 박막을 통상의 금속배선 재료인 알루미늄과 기판인 실리콘이 직접 접촉될 때 알루미늄과 실리콘의 반응으로 접합이 열화되는 현상을 방지하기 위하여, 금속배선 재료와 실리콘 사이에 통상 스퍼터(sputter) 방법을 이용하여 증착 형성하고 있다. 이때에는 웨이퍼의 전면에 티타늄 나이트라이드 박막이 증착되어서 반도체 소자의 소형화에 따라 점점 작아지고 있는 접촉홈의 측벽에도 질화 티타늄이 증착되며 이로 인하여 후속의 금속배선 증착시에는 더욱 좁아진 접촉홈으로 인해 금속배선 재료의 단차 피복성이 나빠지는 문제가 있다.In general, in order to prevent the degradation of the junction due to the reaction between aluminum and silicon when the titanium nitride thin film is directly contacted with aluminum, which is a conventional metal wiring material, and silicon, which is a substrate, in the manufacturing process of a semiconductor device, Vapor deposition is carried out between the silicon using a sputtering method. At this time, a titanium nitride thin film is deposited on the front surface of the wafer, and titanium nitride is also deposited on the sidewalls of the contact grooves, which are getting smaller as the semiconductor device becomes smaller. There is a problem that the step coverage of the material is deteriorated.
따라서, 본 발명에서는 접촉홈과 같이 실리콘이 노출된 부위에만 먼저 티타늄 실리사이드를 자기정렬 기술을 이용하여 형성하고, 이것을 다시 플라즈마 열처리를 통하여 티타늄 나이트라이드 박막으로 변화시킴으로써 접촉홈의 측벽에는 티타늄 나이트라이드 박막이 형성되지 않고 접촉홈의 기저부인 실리콘 기판에만 티타늄 나이트라이드 박막을 형성되지 않고 접촉홈의 기저분인 실리콘 기판에만 티타늄 나이트라이드 박막이 형성되지 않고 접촉홈의 기저부인 실리콘 기판에만 티타늄 나이트라이드 박막을 형성하여 후속의 금속배선 증착시 단차비(Aspect Ratio)의 열화를 방지할 수 있도록 한 티타늄 나이트라이드 박막을 형성하는 방법을 제공함에 그 목적이 있다.Therefore, in the present invention, the titanium silicide is first formed on the exposed portions of silicon such as the contact grooves by using a self-aligning technique, and the titanium nitride thin film is formed on the sidewalls of the contact grooves by changing the titanium silicide thin film through plasma heat treatment. The titanium nitride thin film is not formed only on the silicon substrate which is the base of the contact groove, and the titanium nitride thin film is not formed only on the silicon substrate which is the base of the contact groove. It is an object of the present invention to provide a method of forming a titanium nitride thin film which can be formed to prevent degradation of an aspect ratio during subsequent metallization deposition.
본 발명에 의하면, 선택적인 티타늄 나이트라이드 박막을 형성하기 위하여 먼저 실리콘이 노출된 부위만 티타늄 실리사이드의 자기정렬 특성을 이용하여 티타늄 실리사이드화하는 단계와 이것을 다시 플라즈마 열처리를 통하여 티타늄 나이트라이드 박막으로 변화시키는 단계로 이루어지는 것을 특징으로 한다.According to the present invention, in order to form a selective titanium nitride thin film, first, only silicon-exposed portions of titanium silicide are formed by using the self-aligning property of titanium silicide, and this is converted into a titanium nitride thin film through plasma heat treatment. It is characterized by consisting of steps.
이하, 본 발명을 첨부된 도면을 참조하여 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제1a도 내지 제1d도는 본 발명에 의한 반도체 소자의 확산방지용 티타늄 나이트라이드 박막 형성방법을 설명하기 위해 소자의 단면도로서, 제1a도는 소정의 단위 셀이 구비된 실리콘 기판(1)위에 층간 절연막(2)을 증착한 후 사진 식각공정을 거쳐 실리콘 기판(1)의 소정부위가 노출된 접촉홈(6)을 형성한 상태를 도시한 것이다.1A to 1D are cross-sectional views of a device for explaining a method of forming a titanium nitride thin film for preventing diffusion of a semiconductor device according to the present invention. FIG. 1A is an interlayer insulating film on a silicon substrate 1 having a predetermined unit cell. 2) shows a state in which a contact groove 6 in which a predetermined portion of the silicon substrate 1 is exposed through a photolithography process after deposition is deposited.
제1c도는 제1b도의 상태하에서 티타늄 박막(3)을 소정 온도에서 열처리하여 실리콘 기판(1) 노출부위에 증착된 티타늄 박막(3)의 티타늄과 실리콘 기판(1)의 실리콘을 반응시켜 티타늄 실리사이드(4)를 형성한 후, NH4OH : H2O = 1 : 1 : 5의 비율로 된 SCI 용액내에서 습식 식각공정으로 층간 절연막(2) 위에 증착된 티타늄 박막(3)을 제거하여 실리콘 기판(1)의 노출부위에만 티타늄 실리사이드(4)가 형성된 상태를 도시한 것이다.In FIG. 1C, the titanium thin film 3 is heat-treated at a predetermined temperature under the condition of FIG. 4) After forming, the silicon substrate by removing the titanium thin film (3) deposited on the interlayer insulating film (2) by a wet etching process in a SCI solution of NH 4 OH: H 2 O = 1: 1: 5: ratio. FIG. 1 shows a state in which the titanium silicide 4 is formed only at the exposed portion of (1).
제1d도는 제1c도의 상태하에서 실리콘 기판(1)이 노출된 부위에만 형성된 티타늄 실리사이드(4)를 암모니아 가스 분위기에서 소정온도로 플라즈마 열처리하여 티타늄 나이트라이드 박막(5)을 형성한 상태를 도시한 것이다. 이때 티타늄 나이트라이드 박막(5) 형성시 화학식은 다음과 같다.FIG. 1D illustrates a state in which the titanium nitride thin film 5 is formed by plasma-heating the titanium silicide 4 formed only on the exposed portions of the silicon substrate 1 at a predetermined temperature in the state of FIG. 1c. . In this case, the chemical formula when forming the titanium nitride thin film 5 is as follows.
[화학식][Formula]
TiSiX+ NH3→ TiN + SiH3 TiSi X + NH 3 → TiN + SiH 3
이와 같이 상기 화학과정으로 티타늄 나이트라이드 박막(5)이 형성하게 된다.As such, the titanium nitride thin film 5 is formed by the chemical process.
상기한 바와 같이 본 발명은 고집적 반도체 소자의 금속배선 공정중에서 확산방지 금속층으로 널리 이용하고 있는 티타늄 나이트라이드 박막을 티타늄 실리사이드(Titanium Silicide)의 자기정렬 특성을 이용하여 실리콘이 노출된 부위만 선택적으로 티타늄 실리사이드를 형성하고, 이를 다시 소정온도와 암모니아 가스 분위기에서 플라즈마(plasma) 열처리하여 티타늄 나이트라이드 박막을 형성함으로써, 반도체 소자의 제조공정에의 적응성을 향상시킴과 아울러 후속의 금속배선 공정시 금속배선의 단차 피복성(step coverage)을 향상시키는 효과가 있다.As described above, according to the present invention, a titanium nitride thin film widely used as a diffusion barrier metal layer in a metallization process of a highly integrated semiconductor device is selectively titanium-exposed only by a silicon exposed portion using a self-aligning property of titanium silicide. By forming a silicide and plasma-heating it again at a predetermined temperature and ammonia gas atmosphere to form a titanium nitride thin film, it improves the adaptability to the manufacturing process of the semiconductor device and the metal wiring during the subsequent metallization process. There is an effect of improving the step coverage (step coverage).
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930024969A KR0124489B1 (en) | 1993-11-23 | 1993-11-23 | Forming method of titanium nitride film for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930024969A KR0124489B1 (en) | 1993-11-23 | 1993-11-23 | Forming method of titanium nitride film for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950015593A KR950015593A (en) | 1995-06-17 |
| KR0124489B1 true KR0124489B1 (en) | 1997-12-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930024969A KR0124489B1 (en) | 1993-11-23 | 1993-11-23 | Forming method of titanium nitride film for semiconductor device |
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| Country | Link |
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| KR (1) | KR0124489B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100455367B1 (en) * | 1997-06-10 | 2005-01-17 | 삼성전자주식회사 | Formation method of self-aligned silicide layer using ammonia plasma |
| KR20160054311A (en) | 2014-11-06 | 2016-05-16 | 황성원 | A fishing rod supporter of folding and assembling type |
| KR20220114401A (en) | 2021-02-08 | 2022-08-17 | 이서진 | support for fishing rod |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100484253B1 (en) * | 1998-06-27 | 2005-07-07 | 주식회사 하이닉스반도체 | Titanium film formation method of semiconductor device |
-
1993
- 1993-11-23 KR KR1019930024969A patent/KR0124489B1/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100455367B1 (en) * | 1997-06-10 | 2005-01-17 | 삼성전자주식회사 | Formation method of self-aligned silicide layer using ammonia plasma |
| KR20160054311A (en) | 2014-11-06 | 2016-05-16 | 황성원 | A fishing rod supporter of folding and assembling type |
| KR20220114401A (en) | 2021-02-08 | 2022-08-17 | 이서진 | support for fishing rod |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950015593A (en) | 1995-06-17 |
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