KR0119273B1 - Fabrication method of x-ray mask - Google Patents
Fabrication method of x-ray maskInfo
- Publication number
- KR0119273B1 KR0119273B1 KR93026317A KR930026317A KR0119273B1 KR 0119273 B1 KR0119273 B1 KR 0119273B1 KR 93026317 A KR93026317 A KR 93026317A KR 930026317 A KR930026317 A KR 930026317A KR 0119273 B1 KR0119273 B1 KR 0119273B1
- Authority
- KR
- South Korea
- Prior art keywords
- guard ring
- silicon wafer
- fabrication method
- ray mask
- depositing
- Prior art date
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A fabrication method of X-ray mask is provided to reduce stress at the time of X-ray exposing using a guard ring. The method comprises the steps of: depositing an oxide layer(6) and a nitride layer(3) on a front and rear side of a silicon wafer(1), respectively; forming a guard ring(7) by etching the oxide layer(6) under CHF3/C2F6/He gas and the silicon wafer(1) under SF6 gas; depositing a silicon nitride(2) on the front side of the silicon wafer(1); defining an PMMA pattern(4) by E-bean exposure; and plating a gold metal(5) and lift-off the PMMA pattern(4). Thereby, it is possible to easily form a fine pattern without generating of stress by using the guard ring(7).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93026317A KR0119273B1 (en) | 1993-12-03 | 1993-12-03 | Fabrication method of x-ray mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93026317A KR0119273B1 (en) | 1993-12-03 | 1993-12-03 | Fabrication method of x-ray mask |
Publications (1)
Publication Number | Publication Date |
---|---|
KR0119273B1 true KR0119273B1 (en) | 1997-09-30 |
Family
ID=19369782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93026317A KR0119273B1 (en) | 1993-12-03 | 1993-12-03 | Fabrication method of x-ray mask |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0119273B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020043184A (en) * | 2000-12-01 | 2002-06-08 | 가네꼬 히사시 | Mask for electron beam projection lithography and method of fabricating the same |
-
1993
- 1993-12-03 KR KR93026317A patent/KR0119273B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020043184A (en) * | 2000-12-01 | 2002-06-08 | 가네꼬 히사시 | Mask for electron beam projection lithography and method of fabricating the same |
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Legal Events
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E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030701 Year of fee payment: 7 |
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LAPS | Lapse due to unpaid annual fee |