KR0116279Y1 - Apparatus for lpcvd - Google Patents
Apparatus for lpcvd Download PDFInfo
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- KR0116279Y1 KR0116279Y1 KR2019940017107U KR19940017107U KR0116279Y1 KR 0116279 Y1 KR0116279 Y1 KR 0116279Y1 KR 2019940017107 U KR2019940017107 U KR 2019940017107U KR 19940017107 U KR19940017107 U KR 19940017107U KR 0116279 Y1 KR0116279 Y1 KR 0116279Y1
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- pressure
- valve
- reaction chamber
- vapor deposition
- chemical vapor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
Abstract
반응실의 외부튜브(11)내에 개스 흐름을 제어하기 위한 내부튜브(12)를 설치하고, 내부튜브내의 웨이퍼보트(13)에 의해 운반되는 웨이퍼를 안치하고, 프로세스 개스를 개스 인입구(15)로 들어가게 하며, 반응실(10)의 압력을 게이지 G(16)로 측정하여 소정의 압력상태가 되도록 제어기(17)에서 제어신호를 발생하고, 이 제어신호를 모터가 받아서 자동압력조절밸브를 동작시켜 화학 반응실내의 압력을 일정하게 제어하는 저압 화학 증착 장치에 있어서, 자동압력조절밸브로서 배기관내에 플러그코크(33)밸즈를 사용하는 저압화학 증착장치The inner tube 12 for controlling the gas flow is installed in the outer tube 11 of the reaction chamber, the wafer carried by the wafer boat 13 in the inner tube is placed, and the process gas is transferred to the gas inlet 15. The pressure of the reaction chamber 10 is measured by the gauge G 16 to generate a control signal from the controller 17 to be in a predetermined pressure state, and the motor receives the control signal to operate the automatic pressure regulating valve. In the low pressure chemical vapor deposition apparatus which controls the pressure in a chemical reaction chamber uniformly, the low pressure chemical vapor deposition apparatus which uses the plug cock 33 valve in an exhaust pipe as an automatic pressure control valve.
Description
제1도는 종래의 화학기상증착장비의 개략을 도시한 도면.1 is a view showing an outline of a conventional chemical vapor deposition equipment.
제2도는 화학기상증착장비의 버터플라이밸브 단면을 보인 도면.2 is a cross-sectional view of the butterfly valve of the chemical vapor deposition equipment.
제1도는 본고안의 화학기상증착장비의 플러그코크밸브를 보인 도면.1 is a view showing the plug cock valve of the chemical vapor deposition equipment of the present invention.
본 고안은 저압화학증착장치에 관한 것으로, 특히 반도체 제조공정중 저압 화학 증착 장치의 안정적인 압력 조절에 적당하도록 플러그코크밸브를 이용한 장치에 관한 것이다.The present invention relates to a low pressure chemical vapor deposition apparatus, and more particularly to a device using a plug cock valve to be suitable for the stable pressure control of the low pressure chemical vapor deposition apparatus during the semiconductor manufacturing process.
반도체 제조공정에서 웨이퍼상에 박막을 증착하는 화학기상증착장비에 있어서 반응실의 압력을 안정적으로 유지하는 것이 중요하며 이를 위하여 자동압력조절(AUTOMATIC PRESSURE CONTROL) 밸브로서 나비날개 모양(BUTTERFLY)의 원판형의 조절판을 가진 바터플라이 밸브를 사용한다.In chemical vapor deposition equipment for depositing thin films on wafers in semiconductor manufacturing processes, it is important to maintain the pressure in the reaction chamber stably. For this purpose, a butterfly-shaped disc is used as an automatic pressure control valve. Use a butterfly valve with a throttle on the valve.
이 바터블라이 밸브는 스테핑 모터를 사용하여 압력콘트롤러의 신호에 따라 0-90도를 회전하면서 압력조절을 한다.The butterfly valve uses a stepping motor to adjust the pressure by rotating 0-90 degrees in response to a signal from the pressure controller.
반도체 제조공정에서 사용되는 종래의 화학기상증착장비의 개략이 제1도에 도시되어 있는데, 이장비는 반응실의 압력을 일정하게 유지시키기 위한 외부튜브(11)내에 개스 흐름을 제어하기 위한 내부튜브(12)를 설치하고, 내부튜브내의 반응실에 웨이퍼보트(13)에 의해 운반되는 웨이퍼를 안치하고, 프로세스 개스를 개스 인입구(15)로 들어가게 하며, 반응실(10)의 압력을 게이지 G(16)로 측정하여 소정의 압력상태가 되도록 제어기(17)에서 제어신호를 발생하면 이신호를 모터(스텝핑모터: STEPPING MOTOR)(18)가 받아서 버터플라이(19)를 움직여 개스를 펌퍼 P(20)로 흐르게 하여 반응실내의 압력을 소정의 수치로 유지시키도록 구성된 것이다.A schematic of a conventional chemical vapor deposition apparatus used in a semiconductor manufacturing process is shown in FIG. 1, which is an inner tube for controlling gas flow in an outer tube 11 for maintaining a constant pressure in a reaction chamber. (12), the wafer carried by the wafer boat 13 is placed in the reaction chamber in the inner tube, the process gas enters the gas inlet 15, and the pressure of the reaction chamber 10 is measured by the gauge G ( 16) When a control signal is generated by the controller 17 so as to be in a predetermined pressure state, the signal is received by a motor (stepping motor) 18 and the butterfly 19 is moved to pump the gas. It is configured to maintain the pressure in the reaction chamber to a predetermined value by flowing to.
21번은 게이트발브로서 개스흐름의 차단과 허용을 위하여 설치한 수동조작밸브이다.Gate 21 is a gate valve, a manual override valve installed to block and allow gas flow.
나비날개 모양(BUTTERFLY)의 조절판을 가진 자동압력조절을 위한 바터플라이밸브는 제2도에 도시한 바와 같은 밸브 조절판 날개가 스테핑 모터에 의하여 0-90도를 회전하면서 압력조절하도록 되어 있다.The butterfly valve for automatic pressure control with a butterfly wing (BUTTERFLY) control valve is configured to adjust the pressure by rotating the valve control plate blade as shown in FIG. 2 by a stepping motor 0-90 degrees.
반도체 제조공정중 저압 화학 증착법을 이용한 박악 증착장치에서는 튜브내의 압력을 일정하게 유지해 주기 위해서 인입(引入)되는 반응 가스량을 제어기(MASS FLOW CONTROLLER)로 조정되며 동시에 펌프(20)로 빨아내는 양도 튜브내 압력을 읽어 콘트롤러에서 지시하는대로 배기관의 바터플라이 밸브를 여닫음으로서 튜브내의 압력을 일정하게 유지한다.In the thin film deposition apparatus using low pressure chemical vapor deposition during the semiconductor manufacturing process, the amount of reaction gas drawn in is controlled by a controller (MASS FLOW CONTROLLER) while maintaining a constant pressure in the tube. Read the pressure and keep the pressure in the tube constant by opening and closing the valve valve of the exhaust pipe as instructed by the controller.
종래의 자동 압력 조절밸브는 미 반응된 가스가 BUTTERFLY의 상하로 양분되어 흐르며 이로인해 관(22)의 내벽에 분말들이 증착되어 BUTTERFLY가 회전하는 것을 방해하고 미세한 압력변화에 민감하게 반응하지 못하게 되고 오동작할 우려가 있다. 또 이러한 부산물들의 증착이 누적되면 결국은 조절 불가능한 상태에 까지 이르게 되며 이를 예방하기 위해서 주기적으로 밸브를 세정해 주어야하는 불편이 있다.In the conventional automatic pressure control valve, unreacted gas flows into the upper and lower portions of the ButterFLY, which causes powders to be deposited on the inner wall of the tube 22, preventing the ButterFLY from rotating and being sensitive to minute pressure changes and malfunctioning. There is a concern. In addition, if the accumulation of these by-products accumulate eventually to an uncontrollable state, there is an inconvenience of periodically cleaning the valve to prevent this.
본 고안은 반응실내의 압력을 일정하게 유지하기 위해 배기관에 부착되는 자동압력조절밸브로서 플러그코크(PLUG COCK) 밸브를 사용하여 미반응 가스의 흐름을 좋게하여 부산물의 부착을 억제 및 압력조정의 정밀도를 높이도록 한 것이다.The present invention is an automatic pressure control valve attached to the exhaust pipe in order to keep the pressure in the reaction chamber constant. By using a plug cock valve, the flow of unreacted gas is improved to suppress the attachment of by-products and the pressure adjustment accuracy. To increase.
본 고안의 플러그코크밸브는 제3도에 보인 개략 단면도와 같이, 배기관(22)내에 플러그코크(33)을 설치하여 이 플러그코크 마개를 모타에 의해 회전되게 하여 개스흐름을 제어하므로써 반응실내의 압력을 조절하게 한 것이다.In the plug coke valve of the present invention, as shown in the schematic cross-sectional view shown in FIG. 3, the plug coke 33 is installed in the exhaust pipe 22 to rotate the plug coke stopper by a motor to control the gas flow, thereby controlling the pressure in the reaction chamber. To control.
다음표는 본 고안의 플러그코크밸브와 종래의 바터플라이밸브의 열림각도에 따른 유체흐름의 콘덕턴스(CONDUCTANCE)를 비교한 표이다.The following table is a table comparing the conductance (CONDUCTANCE) of the fluid flow according to the opening angle of the plug cock valve and the conventional butterfly valve of the present invention.
* 6*3 표 들어감* 6 * 3 tickets entered
본 고안의 종래의 화학기상증착장비에서 사용하는 외부튜브(11), 내부튜브(12), 웨이퍼보트(13), 게이지G(16), 제어기(17), 모터(18), 펌퍼 P(20), 등을 그대로 사용하며, 압력조절밸브로서 플러그코크밸브를 사용한다. 그래서 반응실내의 압력을 콘트롤러에서 읽어 낸 값을 설정치와 비교, 가변적으로 개도(開度)조절을 한다.Outer tube 11, inner tube 12, wafer boat 13, gauge G 16, controller 17, motor 18, pump P used in the conventional chemical vapor deposition equipment of the present invention ), Etc. are used as is, and a plug cock valve is used as a pressure regulating valve. Therefore, the pressure reading in the reaction chamber is compared with the set value and the opening degree is variably adjusted.
즉 본 고안에서는 반응실의 압력을 일정하게 유지시키기 위한 외부튜브(11)내에 개스 흐름을 제어하기 위한 내부튜브(12)를 설치하고, 내부튜브내의 반응실에 웨이퍼보트(13)에 의해 운반되는 웨이퍼를 안치하고, 프로세스 개스를 개스 인입구(15)로 들어가게 하며, 반응실(10)의 압력을 게이지 G(16)로 측정하여 소정의 압력상태가 되도록 제어기(17)에서 제어신호를 발생하면 이 신호를 모터(스텝핑모터:STEPPING MOTOR)(18)가 받아서 플러그코크(33)를 움직여 프로세스 개스를 펌퍼 P (20)로 흐르게 하여 반응실내의 압력을 소정의 수치로 유지시키도록 동작시킨다.That is, in the present invention, the inner tube 12 for controlling the gas flow is installed in the outer tube 11 for keeping the pressure in the reaction chamber constant and carried by the wafer boat 13 to the reaction chamber in the inner tube. When the wafer is settled, the process gas is introduced into the gas inlet 15, the pressure of the reaction chamber 10 is measured by the gauge G 16, and when the control signal is generated by the controller 17 to be in a predetermined pressure state, The signal is received by a motor (STEPING MOTOR) 18 and the plug cock 33 is moved to operate the process gas to the pump P 20 to maintain the pressure in the reaction chamber at a predetermined value.
종래의 방식에 비해 플러그코크 밸브는 작은 열림각도에서 각도에 따른 유량변화가 적으므로 미세한 압력변화와 조절이 가능해지며, 미반응 가스의 흐름이 중앙쪽으로 진행되므로 밸브 외벽의 분말증착이 줄어들어 밸브의 세정주기를 연장할수 있고, 밸브 오동작에 의한 공정 트러블을 감소시킬수 있는 효과가 있다.Compared to the conventional method, the plug coke valve has a small change in flow rate according to the angle at a small opening angle, and thus it is possible to adjust and adjust minute pressures. Since the unreacted gas flows toward the center, powder deposition on the outer wall of the valve is reduced, thereby cleaning the valve The period can be extended and process troubles caused by valve malfunction can be reduced.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940017107U KR0116279Y1 (en) | 1994-07-11 | 1994-07-11 | Apparatus for lpcvd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940017107U KR0116279Y1 (en) | 1994-07-11 | 1994-07-11 | Apparatus for lpcvd |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960006305U KR960006305U (en) | 1996-02-17 |
| KR0116279Y1 true KR0116279Y1 (en) | 1998-04-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940017107U KR0116279Y1 (en) | 1994-07-11 | 1994-07-11 | Apparatus for lpcvd |
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| Country | Link |
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| KR (1) | KR0116279Y1 (en) |
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1994
- 1994-07-11 KR KR2019940017107U patent/KR0116279Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960006305U (en) | 1996-02-17 |
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