JPWO2023286235A1 - - Google Patents
Info
- Publication number
- JPWO2023286235A1 JPWO2023286235A1 JP2023534538A JP2023534538A JPWO2023286235A1 JP WO2023286235 A1 JPWO2023286235 A1 JP WO2023286235A1 JP 2023534538 A JP2023534538 A JP 2023534538A JP 2023534538 A JP2023534538 A JP 2023534538A JP WO2023286235 A1 JPWO2023286235 A1 JP WO2023286235A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2021/026592 WO2023286235A1 (ja) | 2021-07-15 | 2021-07-15 | 炭化珪素半導体装置および電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2023286235A1 true JPWO2023286235A1 (ja) | 2023-01-19 |
JPWO2023286235A5 JPWO2023286235A5 (ja) | 2023-09-25 |
Family
ID=84919774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023534538A Pending JPWO2023286235A1 (ja) | 2021-07-15 | 2021-07-15 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPWO2023286235A1 (ja) |
CN (1) | CN117693822A (ja) |
DE (1) | DE112021007977T5 (ja) |
WO (1) | WO2023286235A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6377302U (ja) | 1986-11-07 | 1988-05-23 | ||
JP3913564B2 (ja) * | 2002-01-31 | 2007-05-09 | 富士電機ホールディングス株式会社 | 超接合半導体素子の製造方法 |
JP4166627B2 (ja) * | 2003-05-30 | 2008-10-15 | 株式会社デンソー | 半導体装置 |
JP5369372B2 (ja) * | 2005-11-28 | 2013-12-18 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP4539680B2 (ja) * | 2007-05-14 | 2010-09-08 | 株式会社デンソー | 半導体装置およびその製造方法 |
US10243039B2 (en) * | 2016-03-22 | 2019-03-26 | General Electric Company | Super-junction semiconductor power devices with fast switching capability |
-
2021
- 2021-07-15 JP JP2023534538A patent/JPWO2023286235A1/ja active Pending
- 2021-07-15 DE DE112021007977.8T patent/DE112021007977T5/de active Pending
- 2021-07-15 WO PCT/JP2021/026592 patent/WO2023286235A1/ja active Application Filing
- 2021-07-15 CN CN202180100410.1A patent/CN117693822A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2023286235A1 (ja) | 2023-01-19 |
DE112021007977T5 (de) | 2024-05-02 |
CN117693822A (zh) | 2024-03-12 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230630 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230630 |