JPWO2022190336A1 - - Google Patents

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Publication number
JPWO2022190336A1
JPWO2022190336A1 JP2022552396A JP2022552396A JPWO2022190336A1 JP WO2022190336 A1 JPWO2022190336 A1 JP WO2022190336A1 JP 2022552396 A JP2022552396 A JP 2022552396A JP 2022552396 A JP2022552396 A JP 2022552396A JP WO2022190336 A1 JPWO2022190336 A1 JP WO2022190336A1
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JP
Japan
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Application number
JP2022552396A
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JP7482240B2 (ja
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Publication of JPWO2022190336A1 publication Critical patent/JPWO2022190336A1/ja
Application granted granted Critical
Publication of JP7482240B2 publication Critical patent/JP7482240B2/ja
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433Particular geometry of the grid contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • H10K30/82Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/814Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2004Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009Solid electrolytes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2027Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Optics & Photonics (AREA)
  • Non-Insulated Conductors (AREA)
JP2022552396A 2021-03-12 2021-03-12 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス Active JP7482240B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/009945 WO2022190336A1 (ja) 2021-03-12 2021-03-12 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Publications (2)

Publication Number Publication Date
JPWO2022190336A1 true JPWO2022190336A1 (ja) 2022-09-15
JP7482240B2 JP7482240B2 (ja) 2024-05-13

Family

ID=83226457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022552396A Active JP7482240B2 (ja) 2021-03-12 2021-03-12 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス

Country Status (5)

Country Link
US (1) US20220416100A1 (ja)
EP (1) EP4307395A1 (ja)
JP (1) JP7482240B2 (ja)
CN (1) CN115349179A (ja)
WO (1) WO2022190336A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7198389B2 (ja) * 2020-08-04 2022-12-28 株式会社東芝 電極評価方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010001591A1 (ja) * 2008-07-04 2010-01-07 戸田工業株式会社 透明導電性転写版の製造方法、透明導電性転写版、透明導電性転写版を用いた透明導電性基材の製造方法、透明導電性基材、および透明導電性基材を用いた成形体
WO2011055663A1 (ja) * 2009-11-04 2011-05-12 コニカミノルタホールディングス株式会社 透明電極および有機電子デバイス
JP2011116925A (ja) * 2009-12-04 2011-06-16 Nihon Sentan Kagaku Kk 共役二重結合ポリマーとポリスチレンスルホン酸塩ないしはポリビニルスルホン酸塩との複合体からなる導電性組成物分散液の製造方法
JP2011157535A (ja) * 2010-01-29 2011-08-18 Nihon Sentan Kagaku Kk 導電性組成物の製造方法
WO2012093530A1 (ja) * 2011-01-06 2012-07-12 リンテック株式会社 透明導電性積層体および有機薄膜デバイス
JP2013542546A (ja) * 2010-03-08 2013-11-21 ウィリアム・マーシュ・ライス・ユニバーシティ グラフェン/格子混成構造に基づいた透明電極
JP2017080951A (ja) * 2015-10-26 2017-05-18 日東電工株式会社 ハードコートフィルムおよび透明導電性フィルム
US20180248052A1 (en) * 2015-01-08 2018-08-30 Korea Research Institute Of Chemical Technology Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4479287B2 (ja) * 2004-03-11 2010-06-09 株式会社日立製作所 導電性ガラスおよびそれを用いた光電変換デバイス
JP2011228224A (ja) * 2010-04-23 2011-11-10 Sony Corp 透明電極基板および光電変換素子
JP2012080091A (ja) * 2010-09-07 2012-04-19 Fujifilm Corp 透明導電フィルム、その製造方法、それを用いた有機薄膜太陽電池
WO2013151142A1 (ja) 2012-04-05 2013-10-10 コニカミノルタ株式会社 有機光電変換素子およびこれを用いた太陽電池
JP2014216175A (ja) * 2013-04-25 2014-11-17 リンテック株式会社 透明導電性積層体の製造方法及び透明導電性積層体
CN104407729B (zh) 2014-10-14 2018-01-09 业成光电(深圳)有限公司 电子装置、触控屏、透明导电膜及透明导电膜的制备方法
KR102542685B1 (ko) * 2015-11-06 2023-06-12 린텍 가부시키가이샤 투명 도전층 적층용 필름, 그 제조 방법, 및 투명 도전성 필름
CN106782769B (zh) * 2016-11-22 2018-06-29 华中科技大学 低粗糙度低方阻的柔性透明导电复合薄膜及其制备方法
CN110459366B (zh) * 2019-07-30 2020-11-13 哈尔滨工业大学(深圳) 超高透光率电极的制备方法和电子皮肤、机器人

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010001591A1 (ja) * 2008-07-04 2010-01-07 戸田工業株式会社 透明導電性転写版の製造方法、透明導電性転写版、透明導電性転写版を用いた透明導電性基材の製造方法、透明導電性基材、および透明導電性基材を用いた成形体
WO2011055663A1 (ja) * 2009-11-04 2011-05-12 コニカミノルタホールディングス株式会社 透明電極および有機電子デバイス
JP2011116925A (ja) * 2009-12-04 2011-06-16 Nihon Sentan Kagaku Kk 共役二重結合ポリマーとポリスチレンスルホン酸塩ないしはポリビニルスルホン酸塩との複合体からなる導電性組成物分散液の製造方法
JP2011157535A (ja) * 2010-01-29 2011-08-18 Nihon Sentan Kagaku Kk 導電性組成物の製造方法
JP2013542546A (ja) * 2010-03-08 2013-11-21 ウィリアム・マーシュ・ライス・ユニバーシティ グラフェン/格子混成構造に基づいた透明電極
WO2012093530A1 (ja) * 2011-01-06 2012-07-12 リンテック株式会社 透明導電性積層体および有機薄膜デバイス
US20180248052A1 (en) * 2015-01-08 2018-08-30 Korea Research Institute Of Chemical Technology Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film
JP2017080951A (ja) * 2015-10-26 2017-05-18 日東電工株式会社 ハードコートフィルムおよび透明導電性フィルム

Also Published As

Publication number Publication date
EP4307395A1 (en) 2024-01-17
US20220416100A1 (en) 2022-12-29
CN115349179A (zh) 2022-11-15
JP7482240B2 (ja) 2024-05-13
WO2022190336A1 (ja) 2022-09-15

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