JPWO2022190336A1 - - Google Patents
Info
- Publication number
- JPWO2022190336A1 JPWO2022190336A1 JP2022552396A JP2022552396A JPWO2022190336A1 JP WO2022190336 A1 JPWO2022190336 A1 JP WO2022190336A1 JP 2022552396 A JP2022552396 A JP 2022552396A JP 2022552396 A JP2022552396 A JP 2022552396A JP WO2022190336 A1 JPWO2022190336 A1 JP WO2022190336A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Optics & Photonics (AREA)
- Non-Insulated Conductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2021/009945 WO2022190336A1 (ja) | 2021-03-12 | 2021-03-12 | 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022190336A1 true JPWO2022190336A1 (ja) | 2022-09-15 |
JP7482240B2 JP7482240B2 (ja) | 2024-05-13 |
Family
ID=83226457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022552396A Active JP7482240B2 (ja) | 2021-03-12 | 2021-03-12 | 透明電極およびその作製方法、ならびに透明電極を用いた電子デバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220416100A1 (ja) |
EP (1) | EP4307395A1 (ja) |
JP (1) | JP7482240B2 (ja) |
CN (1) | CN115349179A (ja) |
WO (1) | WO2022190336A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7198389B2 (ja) * | 2020-08-04 | 2022-12-28 | 株式会社東芝 | 電極評価方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010001591A1 (ja) * | 2008-07-04 | 2010-01-07 | 戸田工業株式会社 | 透明導電性転写版の製造方法、透明導電性転写版、透明導電性転写版を用いた透明導電性基材の製造方法、透明導電性基材、および透明導電性基材を用いた成形体 |
WO2011055663A1 (ja) * | 2009-11-04 | 2011-05-12 | コニカミノルタホールディングス株式会社 | 透明電極および有機電子デバイス |
JP2011116925A (ja) * | 2009-12-04 | 2011-06-16 | Nihon Sentan Kagaku Kk | 共役二重結合ポリマーとポリスチレンスルホン酸塩ないしはポリビニルスルホン酸塩との複合体からなる導電性組成物分散液の製造方法 |
JP2011157535A (ja) * | 2010-01-29 | 2011-08-18 | Nihon Sentan Kagaku Kk | 導電性組成物の製造方法 |
WO2012093530A1 (ja) * | 2011-01-06 | 2012-07-12 | リンテック株式会社 | 透明導電性積層体および有機薄膜デバイス |
JP2013542546A (ja) * | 2010-03-08 | 2013-11-21 | ウィリアム・マーシュ・ライス・ユニバーシティ | グラフェン/格子混成構造に基づいた透明電極 |
JP2017080951A (ja) * | 2015-10-26 | 2017-05-18 | 日東電工株式会社 | ハードコートフィルムおよび透明導電性フィルム |
US20180248052A1 (en) * | 2015-01-08 | 2018-08-30 | Korea Research Institute Of Chemical Technology | Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4479287B2 (ja) * | 2004-03-11 | 2010-06-09 | 株式会社日立製作所 | 導電性ガラスおよびそれを用いた光電変換デバイス |
JP2011228224A (ja) * | 2010-04-23 | 2011-11-10 | Sony Corp | 透明電極基板および光電変換素子 |
JP2012080091A (ja) * | 2010-09-07 | 2012-04-19 | Fujifilm Corp | 透明導電フィルム、その製造方法、それを用いた有機薄膜太陽電池 |
WO2013151142A1 (ja) | 2012-04-05 | 2013-10-10 | コニカミノルタ株式会社 | 有機光電変換素子およびこれを用いた太陽電池 |
JP2014216175A (ja) * | 2013-04-25 | 2014-11-17 | リンテック株式会社 | 透明導電性積層体の製造方法及び透明導電性積層体 |
CN104407729B (zh) | 2014-10-14 | 2018-01-09 | 业成光电(深圳)有限公司 | 电子装置、触控屏、透明导电膜及透明导电膜的制备方法 |
KR102542685B1 (ko) * | 2015-11-06 | 2023-06-12 | 린텍 가부시키가이샤 | 투명 도전층 적층용 필름, 그 제조 방법, 및 투명 도전성 필름 |
CN106782769B (zh) * | 2016-11-22 | 2018-06-29 | 华中科技大学 | 低粗糙度低方阻的柔性透明导电复合薄膜及其制备方法 |
CN110459366B (zh) * | 2019-07-30 | 2020-11-13 | 哈尔滨工业大学(深圳) | 超高透光率电极的制备方法和电子皮肤、机器人 |
-
2021
- 2021-03-12 JP JP2022552396A patent/JP7482240B2/ja active Active
- 2021-03-12 WO PCT/JP2021/009945 patent/WO2022190336A1/ja active Application Filing
- 2021-03-12 CN CN202180018129.3A patent/CN115349179A/zh active Pending
- 2021-03-12 EP EP21927033.7A patent/EP4307395A1/en active Pending
-
2022
- 2022-09-02 US US17/929,390 patent/US20220416100A1/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010001591A1 (ja) * | 2008-07-04 | 2010-01-07 | 戸田工業株式会社 | 透明導電性転写版の製造方法、透明導電性転写版、透明導電性転写版を用いた透明導電性基材の製造方法、透明導電性基材、および透明導電性基材を用いた成形体 |
WO2011055663A1 (ja) * | 2009-11-04 | 2011-05-12 | コニカミノルタホールディングス株式会社 | 透明電極および有機電子デバイス |
JP2011116925A (ja) * | 2009-12-04 | 2011-06-16 | Nihon Sentan Kagaku Kk | 共役二重結合ポリマーとポリスチレンスルホン酸塩ないしはポリビニルスルホン酸塩との複合体からなる導電性組成物分散液の製造方法 |
JP2011157535A (ja) * | 2010-01-29 | 2011-08-18 | Nihon Sentan Kagaku Kk | 導電性組成物の製造方法 |
JP2013542546A (ja) * | 2010-03-08 | 2013-11-21 | ウィリアム・マーシュ・ライス・ユニバーシティ | グラフェン/格子混成構造に基づいた透明電極 |
WO2012093530A1 (ja) * | 2011-01-06 | 2012-07-12 | リンテック株式会社 | 透明導電性積層体および有機薄膜デバイス |
US20180248052A1 (en) * | 2015-01-08 | 2018-08-30 | Korea Research Institute Of Chemical Technology | Method for manufacturing device comprising inorganic/organic hybrid perovskite compound film and device comprising inorganic/organic hybrid perovskite compound film |
JP2017080951A (ja) * | 2015-10-26 | 2017-05-18 | 日東電工株式会社 | ハードコートフィルムおよび透明導電性フィルム |
Also Published As
Publication number | Publication date |
---|---|
EP4307395A1 (en) | 2024-01-17 |
US20220416100A1 (en) | 2022-12-29 |
CN115349179A (zh) | 2022-11-15 |
JP7482240B2 (ja) | 2024-05-13 |
WO2022190336A1 (ja) | 2022-09-15 |
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