JPWO2021216684A5

JPWO2021216684A5 -

Info

Publication number: JPWO2021216684A5
Application number: JP2022560437A
Authority: JP
Publication date: 2024-02-09

Claims

基材と、
上部隔離部分及び下部隔離部分を含む隔離要素であって、前記下部隔離部分は前記基材内に配置され、前記上部隔離部分は前記基材の面から突出する、隔離要素と、
前記上部隔離部分の側壁上に配置される反射層と、
前記隔離要素によって取り囲まれるＬＥＤコンポーネントを含むメサであって、前記反射層の下部は前記メサに接触しない、メサと
を含む、発光ダイオード（ＬＥＤ）チップ構造。 base material and
an isolation element comprising an upper isolation portion and a lower isolation portion, the lower isolation portion being disposed within the substrate and the upper isolation portion protruding from a surface of the substrate;
a reflective layer disposed on a sidewall of the upper isolation portion;
A light emitting diode (LED) chip structure comprising: a mesa containing an LED component surrounded by the isolation element, wherein a lower portion of the reflective layer does not contact the mesa.

前記反射層が前記上部隔離部分の前記側壁及び上面上に配置され、前記反射層の前記下部が前記隔離要素から前記メサへと伸びる、請求項１に記載のＬＥＤチップ構造。 2. The LED chip structure of claim 1, wherein the reflective layer is disposed on the sidewalls and top surface of the upper isolation portion, and the lower portion of the reflective layer extends from the isolation element to the mesa.

誘電体層が前記メサの側壁の下部に配置され、前記誘電体層が前記反射層の前記下部によって覆われる、請求項１に記載のＬＥＤチップ構造。 2. The LED chip structure of claim 1 , wherein a dielectric layer is disposed at the bottom of the sidewall of the mesa, and the dielectric layer is covered by the bottom of the reflective layer.

前記上部隔離部分の高さが前記下部隔離部分の高さよりも高い、請求項１に記載のＬＥＤチップ構造。 The LED chip structure of claim 1 , wherein the height of the upper isolation part is higher than the height of the lower isolation part.

前記上部隔離部分の下部幅が前記下部隔離部分の上部幅以上である、請求項１に記載のＬＥＤチップ構造。 The LED chip structure of claim 1 , wherein the lower width of the upper isolation part is greater than or equal to the upper width of the lower isolation part.

前記上部隔離部分の前記下部幅が前記下部隔離部分の前記上部幅よりも長く、前記下部隔離部分の前記上部幅の２倍よりも短く、２つの突出部が前記上部隔離部分のそれぞれの下端部において形成され、前記２つの突出部それぞれの幅が前記下部隔離部分の前記上部幅の半分未満である、請求項５に記載のＬＥＤチップ構造。 the lower width of the upper isolation portion is greater than the upper width of the lower isolation portion and less than twice the upper width of the lower isolation portion, and two protrusions are provided at the lower ends of each of the upper isolation portions; 6. The LED chip structure of claim 5, wherein each of the two protrusions has a width less than half of the upper width of the lower isolation portion.

側面から見て、前記上部隔離部分の断面が台形であり、前記下部隔離部分の断面が逆台形であり、前記上部隔離部分の前記下部が前記下部隔離部分の上部を覆う、請求項５に記載のＬＥＤチップ構造。 6. When viewed from the side, the upper isolation section has a trapezoidal cross-section, the lower isolation section has an inverted trapezoidal cross-section, and the lower part of the upper isolation part covers the upper part of the lower isolation part. LED chip structure.

前記上部隔離部分及び前記下部隔離部分が線対称及び同軸である、請求項５に記載のＬＥＤチップ構造。 6. The LED chip structure of claim 5 , wherein the upper isolation part and the lower isolation part are axisymmetric and coaxial.

前記基材の面に対して前記上部隔離部分の高さが前記メサの高さよりも高く、前記基材の前記面への垂直な軸に対して前記上部隔離部分の前記側壁の傾斜角が前記メサの前記側壁の傾斜角よりも大きい、請求項１に記載のＬＥＤチップ構造。 the height of the upper isolation portion with respect to the plane of the substrate is greater than the height of the mesa, and the angle of inclination of the sidewall of the upper isolation portion with respect to an axis perpendicular to the plane of the substrate is 2. The LED chip structure of claim 1 , wherein the angle of inclination of the sidewalls of a mesa is greater.

前記メサの前記側壁の前記傾斜角が４５°未満であり、前記上部隔離部分の前記側壁の前記傾斜角が４５°を上回る、請求項９に記載のＬＥＤチップ構造。 10. The LED chip structure of claim 9, wherein the inclination angle of the sidewalls of the mesa is less than 45[deg.] and the inclination angle of the sidewalls of the upper isolation portion is greater than 45[deg.].

前記誘電体層が前記メサの上面及び前記側壁を覆い、前記メサの前記上面は前記誘電体層がない領域を含む、請求項３に記載のＬＥＤチップ構造。 4. The LED chip structure of claim 3 , wherein the dielectric layer covers a top surface and the sidewalls of the mesa, and the top surface of the mesa includes an area where the dielectric layer is absent.

前記誘電体層が前記ＬＥＤチップ構造から放たれる光に対して透明である、請求項３に記載のＬＥＤチップ構造。 4. The LED chip structure of claim 3 , wherein the dielectric layer is transparent to light emitted from the LED chip structure.

前記誘電体層がシリコン含有誘電体層、アルミニウム含有誘電体層、又はチタン含有誘電体層の１つ又は複数を含む、請求項３に記載のＬＥＤチップ構造。 4. The LED chip structure of claim 3 , wherein the dielectric layer comprises one or more of a silicon-containing dielectric layer, an aluminum-containing dielectric layer, or a titanium-containing dielectric layer.

前記シリコン含有誘電体層がシリコンの酸化物又は窒化物を含み、前記アルミニウム含有誘電体層がアルミニウムの酸化物を含み、前記チタン含有誘電体層がチタンの酸化物を含む、請求項１３に記載のＬＥＤチップ構造。 14. The silicon-containing dielectric layer comprises an oxide or nitride of silicon, the aluminum-containing dielectric layer comprises an oxide of aluminum, and the titanium-containing dielectric layer comprises an oxide of titanium. LED chip structure.

チタンの前記酸化物がＴｉ_３Ｏ_５である、請求項１４に記載のＬＥＤチップ構造。 15. The LED chip structure of claim ₁₄ , wherein the oxide of titanium is _Ti3O5 .

前記反射層が多層構造を含む、請求項１に記載のＬＥＤチップ構造。 The LED chip structure according to claim 1 , wherein the reflective layer comprises a multilayer structure.

前記多層構造が１つ又は複数の反射性材料層及び１つ又は複数の誘電体材料層のスタックを含む、請求項１６に記載のＬＥＤチップ構造。 17. The LED chip structure of claim 16, wherein the multilayer structure includes a stack of one or more layers of reflective material and one or more layers of dielectric material.

前記反射層が８０％を上回る高反射率を有する１つ又は複数の金属導電材料を含む、請求項１に記載のＬＥＤチップ構造。 The LED chip structure of claim 1 , wherein the reflective layer comprises one or more metallic conductive materials with a high reflectivity greater than 80%.

前記１つ又は複数の金属導電材料がアルミニウム、金、又は銀の１つ又は複数を含む、請求項１８に記載のＬＥＤチップ構造。 19. The LED chip structure of claim 18, wherein the one or more metallic conductive materials include one or more of aluminum, gold, or silver.

メサの上面及び前記側壁並びに前記上部隔離部分の前記上面及び前記側壁が導電層によって覆われる、請求項３に記載のＬＥＤチップ構造。 4. The LED chip structure of claim 3 , wherein the top surface and the sidewalls of the mesa and the top surface and the sidewalls of the upper isolation portion are covered by a conductive layer.

前記導電層が前記ＬＥＤチップ構造から放たれる光に対して透明である、請求項２０に記載のＬＥＤチップ構造。 21. The LED chip structure of claim 20, wherein the conductive layer is transparent to light emitted from the LED chip structure.

前記隔離要素が感光性誘電体材料を含む、請求項１に記載のＬＥＤチップ構造。 The LED chip structure of claim 1 , wherein the isolation element comprises a photosensitive dielectric material.

前記感光性誘電体材料がＳＵ－８又は感光性ポリミド（ＰＳＰＩ）である、請求項２２に記載のＬＥＤチップ構造。 23. The LED chip structure of claim 22, wherein the photosensitive dielectric material is SU-8 or photosensitive polymide (PSPI).

前記基材が半導体ウェハ及び前記半導体ウェハ上の結合金属層を含む、請求項１に記載のＬＥＤチップ構造。 The LED chip structure of claim 1 , wherein the substrate comprises a semiconductor wafer and a bonding metal layer on the semiconductor wafer.