JPWO2021149586A1 - - Google Patents

Info

Publication number
JPWO2021149586A1
JPWO2021149586A1 JP2021573109A JP2021573109A JPWO2021149586A1 JP WO2021149586 A1 JPWO2021149586 A1 JP WO2021149586A1 JP 2021573109 A JP2021573109 A JP 2021573109A JP 2021573109 A JP2021573109 A JP 2021573109A JP WO2021149586 A1 JPWO2021149586 A1 JP WO2021149586A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021573109A
Other languages
Japanese (ja)
Other versions
JP7311181B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021149586A1 publication Critical patent/JPWO2021149586A1/ja
Application granted granted Critical
Publication of JP7311181B2 publication Critical patent/JP7311181B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2021573109A 2020-01-21 2021-01-14 magnetic device Active JP7311181B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020007550 2020-01-21
JP2020007550 2020-01-21
JP2020081960 2020-05-07
JP2020081960 2020-05-07
PCT/JP2021/001081 WO2021149586A1 (en) 2020-01-21 2021-01-14 Magnetic device

Publications (2)

Publication Number Publication Date
JPWO2021149586A1 true JPWO2021149586A1 (en) 2021-07-29
JP7311181B2 JP7311181B2 (en) 2023-07-19

Family

ID=76992320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021573109A Active JP7311181B2 (en) 2020-01-21 2021-01-14 magnetic device

Country Status (3)

Country Link
JP (1) JP7311181B2 (en)
CN (1) CN114930531A (en)
WO (1) WO2021149586A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243336A (en) * 2012-01-30 2013-12-05 Quantu Mag Consultancy Co Ltd Mtj element, manufacturing method of the same and mram device
JP2017059634A (en) * 2015-09-15 2017-03-23 株式会社東芝 Magnetic memory
JP2017168658A (en) * 2016-03-16 2017-09-21 株式会社東芝 Memory cell and magnetic memory
WO2017159432A1 (en) * 2016-03-14 2017-09-21 Tdk株式会社 Magnetic memory
JP2019004071A (en) * 2017-06-16 2019-01-10 株式会社東芝 Magnetic storage device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243336A (en) * 2012-01-30 2013-12-05 Quantu Mag Consultancy Co Ltd Mtj element, manufacturing method of the same and mram device
JP2017059634A (en) * 2015-09-15 2017-03-23 株式会社東芝 Magnetic memory
WO2017159432A1 (en) * 2016-03-14 2017-09-21 Tdk株式会社 Magnetic memory
JP2017168658A (en) * 2016-03-16 2017-09-21 株式会社東芝 Memory cell and magnetic memory
US20170270985A1 (en) * 2016-03-16 2017-09-21 Kabushiki Kaisha Toshiba Magnetic memory
JP2019004071A (en) * 2017-06-16 2019-01-10 株式会社東芝 Magnetic storage device

Also Published As

Publication number Publication date
JP7311181B2 (en) 2023-07-19
WO2021149586A1 (en) 2021-07-29
CN114930531A (en) 2022-08-19

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