JPWO2021149586A1 - - Google Patents
Info
- Publication number
- JPWO2021149586A1 JPWO2021149586A1 JP2021573109A JP2021573109A JPWO2021149586A1 JP WO2021149586 A1 JPWO2021149586 A1 JP WO2021149586A1 JP 2021573109 A JP2021573109 A JP 2021573109A JP 2021573109 A JP2021573109 A JP 2021573109A JP WO2021149586 A1 JPWO2021149586 A1 JP WO2021149586A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020007550 | 2020-01-21 | ||
JP2020007550 | 2020-01-21 | ||
JP2020081960 | 2020-05-07 | ||
JP2020081960 | 2020-05-07 | ||
PCT/JP2021/001081 WO2021149586A1 (en) | 2020-01-21 | 2021-01-14 | Magnetic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021149586A1 true JPWO2021149586A1 (en) | 2021-07-29 |
JP7311181B2 JP7311181B2 (en) | 2023-07-19 |
Family
ID=76992320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021573109A Active JP7311181B2 (en) | 2020-01-21 | 2021-01-14 | magnetic device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7311181B2 (en) |
CN (1) | CN114930531A (en) |
WO (1) | WO2021149586A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013243336A (en) * | 2012-01-30 | 2013-12-05 | Quantu Mag Consultancy Co Ltd | Mtj element, manufacturing method of the same and mram device |
JP2017059634A (en) * | 2015-09-15 | 2017-03-23 | 株式会社東芝 | Magnetic memory |
JP2017168658A (en) * | 2016-03-16 | 2017-09-21 | 株式会社東芝 | Memory cell and magnetic memory |
WO2017159432A1 (en) * | 2016-03-14 | 2017-09-21 | Tdk株式会社 | Magnetic memory |
JP2019004071A (en) * | 2017-06-16 | 2019-01-10 | 株式会社東芝 | Magnetic storage device |
-
2021
- 2021-01-14 JP JP2021573109A patent/JP7311181B2/en active Active
- 2021-01-14 CN CN202180008222.6A patent/CN114930531A/en active Pending
- 2021-01-14 WO PCT/JP2021/001081 patent/WO2021149586A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013243336A (en) * | 2012-01-30 | 2013-12-05 | Quantu Mag Consultancy Co Ltd | Mtj element, manufacturing method of the same and mram device |
JP2017059634A (en) * | 2015-09-15 | 2017-03-23 | 株式会社東芝 | Magnetic memory |
WO2017159432A1 (en) * | 2016-03-14 | 2017-09-21 | Tdk株式会社 | Magnetic memory |
JP2017168658A (en) * | 2016-03-16 | 2017-09-21 | 株式会社東芝 | Memory cell and magnetic memory |
US20170270985A1 (en) * | 2016-03-16 | 2017-09-21 | Kabushiki Kaisha Toshiba | Magnetic memory |
JP2019004071A (en) * | 2017-06-16 | 2019-01-10 | 株式会社東芝 | Magnetic storage device |
Also Published As
Publication number | Publication date |
---|---|
JP7311181B2 (en) | 2023-07-19 |
WO2021149586A1 (en) | 2021-07-29 |
CN114930531A (en) | 2022-08-19 |
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