JPWO2021095661A1 - - Google Patents

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Publication number
JPWO2021095661A1
JPWO2021095661A1 JP2021556072A JP2021556072A JPWO2021095661A1 JP WO2021095661 A1 JPWO2021095661 A1 JP WO2021095661A1 JP 2021556072 A JP2021556072 A JP 2021556072A JP 2021556072 A JP2021556072 A JP 2021556072A JP WO2021095661 A1 JPWO2021095661 A1 JP WO2021095661A1
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JP
Japan
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Application number
JP2021556072A
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Japanese (ja)
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JP7363917B2 (en
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Publication of JPWO2021095661A1 publication Critical patent/JPWO2021095661A1/ja
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Publication of JP7363917B2 publication Critical patent/JP7363917B2/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2021556072A 2019-11-15 2020-11-06 Semiconductor laser device and method for manufacturing semiconductor laser device Active JP7363917B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019206983 2019-11-15
JP2019206983 2019-11-15
PCT/JP2020/041571 WO2021095661A1 (en) 2019-11-15 2020-11-06 Semiconductor laser element, and method for manufacturing semiconductor laser element

Publications (2)

Publication Number Publication Date
JPWO2021095661A1 true JPWO2021095661A1 (en) 2021-05-20
JP7363917B2 JP7363917B2 (en) 2023-10-18

Family

ID=75912903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021556072A Active JP7363917B2 (en) 2019-11-15 2020-11-06 Semiconductor laser device and method for manufacturing semiconductor laser device

Country Status (2)

Country Link
JP (1) JP7363917B2 (en)
WO (1) WO2021095661A1 (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4875216A (en) * 1987-11-30 1989-10-17 Xerox Corporation Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
JPH0897506A (en) * 1994-09-28 1996-04-12 Sharp Corp Manufacture of end face growth window type semiconductor laser element
JP2000232254A (en) * 1999-02-10 2000-08-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and manufacture thereof
JP2006140387A (en) * 2004-11-15 2006-06-01 Nec Corp Nitride semiconductor laser and manufacturing method thereof
JP2007227894A (en) * 2006-01-26 2007-09-06 Nichia Chem Ind Ltd Nitride semiconductor laser element, and manufacturing method therefor
JP2008186903A (en) * 2007-01-29 2008-08-14 Matsushita Electric Ind Co Ltd Semiconductor laser device
JP2008227002A (en) * 2007-03-09 2008-09-25 Nichia Chem Ind Ltd Nitride semiconductor laser element
JP2009016798A (en) * 2007-06-07 2009-01-22 Nichia Corp Nitride semiconductor laser element
JP2009212336A (en) * 2008-03-05 2009-09-17 Mitsubishi Electric Corp Method of manufacturing nitride-based semiconductor laser, and nitride-based semiconductor laser
JP2013030810A (en) * 2012-11-02 2013-02-07 Toshiba Corp Semiconductor light-emitting element

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4875216A (en) * 1987-11-30 1989-10-17 Xerox Corporation Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
JPH0897506A (en) * 1994-09-28 1996-04-12 Sharp Corp Manufacture of end face growth window type semiconductor laser element
JP2000232254A (en) * 1999-02-10 2000-08-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and manufacture thereof
JP2006140387A (en) * 2004-11-15 2006-06-01 Nec Corp Nitride semiconductor laser and manufacturing method thereof
JP2007227894A (en) * 2006-01-26 2007-09-06 Nichia Chem Ind Ltd Nitride semiconductor laser element, and manufacturing method therefor
JP2008186903A (en) * 2007-01-29 2008-08-14 Matsushita Electric Ind Co Ltd Semiconductor laser device
JP2008227002A (en) * 2007-03-09 2008-09-25 Nichia Chem Ind Ltd Nitride semiconductor laser element
JP2009016798A (en) * 2007-06-07 2009-01-22 Nichia Corp Nitride semiconductor laser element
JP2009212336A (en) * 2008-03-05 2009-09-17 Mitsubishi Electric Corp Method of manufacturing nitride-based semiconductor laser, and nitride-based semiconductor laser
JP2013030810A (en) * 2012-11-02 2013-02-07 Toshiba Corp Semiconductor light-emitting element

Also Published As

Publication number Publication date
WO2021095661A1 (en) 2021-05-20
JP7363917B2 (en) 2023-10-18

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